CN100594627C - 构图导电聚合物层的方法、有机发光装置及其制造方法 - Google Patents
构图导电聚合物层的方法、有机发光装置及其制造方法 Download PDFInfo
- Publication number
- CN100594627C CN100594627C CN200610006080A CN200610006080A CN100594627C CN 100594627 C CN100594627 C CN 100594627C CN 200610006080 A CN200610006080 A CN 200610006080A CN 200610006080 A CN200610006080 A CN 200610006080A CN 100594627 C CN100594627 C CN 100594627C
- Authority
- CN
- China
- Prior art keywords
- conductive polymer
- polymer coating
- charged particle
- layer
- particle beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229920001940 conductive polymer Polymers 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000000059 patterning Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims description 44
- 238000000576 coating method Methods 0.000 claims description 44
- 150000002500 ions Chemical class 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 10
- 229920000547 conjugated polymer Polymers 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052792 caesium Inorganic materials 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910052789 astatine Inorganic materials 0.000 claims description 4
- 229910052794 bromium Inorganic materials 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 229910052740 iodine Inorganic materials 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 229910052701 rubidium Inorganic materials 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 48
- 239000011799 hole material Substances 0.000 description 22
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005265 energy consumption Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 229920000767 polyaniline Polymers 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000002322 conducting polymer Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 description 1
- 150000002220 fluorenes Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0329—Intrinsically conductive polymer [ICP]; Semiconductive polymer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0548—Masks
- H05K2203/0557—Non-printed masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/092—Particle beam, e.g. using an electron beam or an ion beam
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1142—Conversion of conductive material into insulating material or into dissolvable compound
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本发明提供构图导电聚合物的方法、利用构图导电聚合物的方法制造的有机发光装置(OLED)、以及制造OLED的方法。构图导电聚合物的方法包括：在基板上形成导电聚合物层；将遮蔽掩模对齐在所述导电聚合物层上；以及通过经所述遮蔽掩模辐照带电粒子束，在所述导电聚合物层中形成导电聚合物图案区域和绝缘区域。
Description
技术领域
本发明涉及构图导电聚合物层的方法、有机发光装置(OLED)、以及制造该OLED的方法，尤其涉及利用带电粒子束构图导电聚合物的方法、通过利用带电粒子束构图导电聚合物的方法制造的OLED、以及制造该OLED的方法。
背景技术
OLED由于其适于彩色显示装置而吸引了很多注意。OLED是利用有机化合物发光的发射型显示装置。OLED较薄，且与TFT-LCD相比由于其简单的结构和制造工艺而具有较低的制造成本、较低的能耗、以及较快的响应时间。
OLED是在有机材料中将电能转化成光能的装置，通过复合分别注入到有机材料的阳极和阴极中的空穴和电子而产生激子(exciton)从而发光。
OLED包括顺序堆叠在基础堆叠结构上的金属性阴极、发射材料层(EML)、以及阳极。OLED的性能受多层薄膜结构的变化的很大影响，OLED的发光效率和寿命可通过向该基础结构增加各种功能层例如空穴转移层(hole transfer layery，HTL)和电子转移层(ETL)而得到改善。
空穴转移层(HTL)包括空穴注入层(HIL)、空穴传输层(hole transportlayer，HTL)和电子阻挡层(EBL)。空穴转移层(HTL)可以由具有低电离电势(ionization potential)的电子施主分子形成，从而便于空穴从阳极注入到空穴转移层(HTL)中。如果空穴转移层(HTL)由三苯联胺(triphenyldiamine，TPD)单体形成且TPD单体受热数小时，则TPD单体结晶化且丧失其空穴转移特性，因为TPD单体具有低的热稳定性。因此，具有高热稳定性和电导率的导电聚合物例如聚亚乙基二氧基噻吩(polyethylenedioxythiophene，PEDOT)或聚苯胺(polyaniline，PANI)被用于形成空穴转移材料。另外，为了将OLED用作显示装置，已经考虑在基板上旋涂导电聚合物层之后通过光工艺(photo process)来构图导电聚合物层的方法。
图1是透视图，示出构图用于OLED的导电聚合物的传统方法(参考韩国专利No.2003-044562)。
参照图1，传统构图方法包括在玻璃基板110上旋涂PEDOT层120，以及通过经光掩模130辐照高能UV射线或X射线到其上涂覆有PEDOT层120的玻璃基板110上形成绝缘层150和空穴传输层(HTL)140。
构图导电聚合物的传统方法利用光掩模130通过辐照高能光子(photon)例如UV射线或X射线形成导电聚合物图案。
构图导电聚合物的传统方法利用光子，其具有折射、反射和干涉特性。难以控制穿过光掩模130的光子，由于光子的波导(wave guiding)，会形成有缺陷的图案。当光掩模130与PEDOT层120之间的间隙被减小从而减小光子的波导时，PEDOT层120会通过接触光掩模130而被污染。此外，利用高能光子构图导电聚合物的传统方法具有高能耗。
发明内容
本发明提供构图导电聚合物的方法，其能形成精确的图案、减小导电聚合物层的污染，并具有较低能耗。
根据本发明的一个方面，提供一种构图导电聚合物的方法，包括：在基板上形成导电聚合物层；将遮蔽掩模对齐在所述导电聚合物层上；以及通过经所述遮蔽掩模辐照带电粒子束，在所述导电聚合物层中形成导电聚合物图案区域和绝缘区域。所述导电聚合物层可由共轭聚合物形成。
所述绝缘区域可以是所述带电粒子束照射到其上的绝缘聚合物层，所述导电聚合物图案区域可以是所述带电粒子束未辐照到其上的所述导电聚合物层。所述导电聚合物图案层可以用作空穴注入层(HIL)或空穴传输层(HTL)。所述带电粒子可以是电子或离子。所述离子可以是选自包括H、Li、Na、K、Rb、Fr、F、Cl、Br、I、At、Ne、Kr、Xe、Rn、He、Ar、N、O、以及Cs的组的材料的离子。
构图导电聚合物的方法可应用于具有导电聚合物图案的任何显示装置，例如OLED和有机TFT显示装置。
根据本发明的另一方面，提供一种制造OLED的方法，该OLED包括：形成在基板上的阳极；位于该阳极上的导电聚合物图案区域和绝缘区域；覆盖该导电聚合物图案区域和该绝缘区域的发光层；以及位于该发光层上的阴极，该方法包括：在基板上形成阳极；在所述阳极上形成导电聚合物层；将遮蔽掩模对齐在所述导电聚合物层上；通过经所述遮蔽掩模辐照带电粒子束，在所述导电聚合物层中形成导电聚合物图案区域和绝缘区域；在所述导电聚合物图案区域和所述绝缘区域上形成发光层；以及在所述发光层上形成阴极。所述导电聚合物层可由共轭聚合物形成。
所述绝缘区域可以是所述带电粒子束辐照到其上的绝缘聚合物层，所述导电聚合物图案区域可以是所述带电粒子束未辐照到其上的所述导电聚合物层。所述带电粒子可以是电子或离子。所述离子可以是选自包括H、Li、Na、K、Rb、Fr、F、Cl、Br、I、At、Ne、Kr、Xe、Rn、He、Ar、N、O、以及Cs的组的材料的离子。
附图说明
通过参照附图详细描述其示例性实施例，本发明的上述和其它特征和优点将变得更加明显，附图中：
图1是透视图，示出构图导电聚合物的传统方法；
图2A至2D是横截面图，示出根据本发明一实施例的构图导电聚合物的方法；
图3是横截面图，示出当带电粒子束经过带电遮蔽掩模时带电粒子束的聚焦；
图4A至4C是来自根据本发明一实施例制造的导电聚合物层的发光的照片；
图5是横截面图，示出具有根据本发明一实施例形成的导电聚合物图案区域的OLED。
具体实施方式
现在将参照附图更充分地描述根据本发明构图导电聚合物的方法，附图中示出本发明的示例性实施例。为清晰起见，图中层的厚度和区域被放大。
图2A至2D是横截面图，示出根据本发明一实施例构图导电聚合物的方法。
参照图2A至2D，构图导电聚合物的方法包括：在基板210上形成导电聚合物层220(见图2A)；将遮蔽掩模(shadow mask)230对齐在导电聚合物层220上，其间有间隙(见图2B)；以及通过经遮蔽掩模230辐照带电粒子束240到导电聚合物层220上形成绝缘区域260和导电聚合物图案区域250(见图2C)。
更具体地，参照图2A，导电聚合物层220通过湿工艺(wet process)例如旋涂、浸涂、辊涂(roll coating)、或喷墨法形成在基板210上。这里，导电聚合物层220由共轭聚合物(conjugated polymer)例如PEDOT或PANI形成。基板210可以由透明材料例如玻璃、石英、或有机聚合物化合物(compound)形成。
参照图2B，遮蔽掩模230对齐在导电聚合物层220之上。此时，导电聚合物层220与遮蔽掩模230之间的间隙不必是窄的，因为当形成导电聚合物图案层250时带电粒子束240被辐照到导电聚合物层220上。
参照图2C，带电粒子束240从在对齐的遮蔽掩模230之上的束源辐照，并撞击到导电聚合物层220上。带电粒子可以是电子或离子，离子可以是选自包括H、He、Ar、N、O、以及Cs的组的材料的离子。
图2D示出图2C的处理结果。参照图2D，带电粒子束240利用遮蔽掩模辐照到导电聚合物层220上之后，导电聚合物层220分成带电粒子束240辐照到其上的绝缘区域260和带电粒子束240未辐照到其上的导电聚合物图案区域250。导电聚合物图案层250可以用作空穴注入层(HIL)或空穴传输层(HTL)。
图3是图2C的修改形式，示出当电势施加到遮蔽掩模230时构图的方法。可以设置一个或更多遮蔽掩模230。参照图3，通过适当地对齐具有阶梯电势(stepwise potential)的遮蔽掩模230，带电粒子束240在经过遮蔽掩模230之后可以聚焦在导电聚合物层220上。该方法可以应用于制造要求精确构图的高分辨率装置。
图4A至4C是来自根据本发明一实施例制造的导电聚合物层的发光的照片。
图4A是显示发光装置被构图之前来自发光装置的发光的照片。图4B是显示来自通过根据本发明的构图方法构图的发光装置的发光的照片，图4C是放大200倍的图案层的照片。参照图4C，来自图案层的表面的发射光是均匀的，且图案的边界线清晰。也就是说，由带电粒子束导致的波导被减小。
图5是横截面图，示出具有根据本发明一实施例形成的导电聚合物图案层的OLED。
参照图5，OLED包括：位于基板210上的阳极510；位于阳极510上的导电聚合物图案区域250和绝缘区域260；覆盖导电聚合物图案区域250和绝缘区域260的发光层520；以及位于发光层520上的阴极530。制造该OLED的方法包括：在基板210上形成阳极510；在阳极510上形成导电聚合物层；将遮蔽掩模对齐在导电聚合物层之上；通过经遮蔽掩模辐照带电粒子束到导电聚合物层上形成导电聚合物图案区域250和绝缘区域260；在导电聚合物图案区域250和绝缘区域260上形成发光层520；以及在发光层520上形成阴极530。
在本发明中，由遮蔽掩模230与导电聚合物层220之间的接触导致的导电聚合物图案区域250的表面污染以及由波导引起的有缺陷构图可被减小，因为带电粒子束240用于构图导电聚合物层220。当具有阶梯电势的遮蔽掩模230被适当地对齐时，从束源辐照的带电粒子束240可被聚焦。与高能光子束相比，带电粒子束240减小了能耗。
现在将详细描述本发明的实施例，但本发明不局限于此。
示例1：制造图案化OLED的方法。
通过在玻璃基板上涂覆铟锡氧化物(ITO)形成透明电极基板。清洁该透明电极基板后，用UV-臭氧处理透明电极基板的表面15分钟。
在ITO电极的上部分上涂覆Baytron P A14083(Bayer公司)(商业名称为PEDOT)至50-110nh的厚度。通过在110℃的温度下烘焙所得产物约10分钟形成空穴传输层(HTL)。
其上涂覆有空穴传输层(HTL)的透明电极基板通过在维持在约1×10-6至1×10-7托(torr)的压强的真空室内利用遮蔽掩模辐照100eV的电子束而被构图。
然后，通过在溶剂即10g氯苯中溶解TS-9(其是聚芴聚合物(polyfluorene polymer))制得用于形成发光层的复合溶液(compositesolution)。该复合溶液利用0.2μm过滤器被过滤，且然后利用旋涂涂覆在空穴传输层(HTL)的上部分上。烘焙所得产物之后，发光层通过在真空炉中完全去除溶剂而形成。发光层的厚度通过控制复合溶液的浓度和旋转速度而控制在50-100nm的范围。
在真空室维持在1×10-6托或更小的压强时通过在发光层的上部分上顺序沉积Ca和Al而完成OLED的制造。利用晶体传感器(crystal sensor)控制膜的厚度和生长速度。
根据上述方法制造的OLED是多层装置，具有ITO/空穴传输层(HTL)/发光聚合物/Ca/Al结构，图案化装置的发光与图4B和4C所示的照片相同。
如上所述，根据本发明构图导电聚合物的方法形成精确图案，减小了导电聚合物层的污染，且消耗较低的能量，因为该方法利用带电粒子束和遮蔽掩模。
尽管参照其示例性实施例特别显示和描述了本发明，但是本领域普通技术人员将理解，在不脱离所附权利要求定义的本发明的精神和范围的情况下，可以进行形式和细节上的各种改变。
Claims (7)
1.一种构图导电聚合物的方法，包括：
在基板上形成导电聚合物层；
将遮蔽掩模对齐在所述导电聚合物层上；以及
通过经所述遮蔽掩模辐照带电粒子束，在所述导电聚合物层中形成导电聚合物图案区域和绝缘区域，
其中所述导电聚合物层由共轭聚合物形成，且
其中所述绝缘区域由所述导电聚合物层的被所述带电粒子束辐照的区域形成，所述导电聚合物图案区域由所述导电聚合物层的未被所述带电粒子束辐照的区域形成。
2.如权利要求1所述的方法，其中所述带电粒子是电子和离子之一。
3.如权利要求2所述的方法，其中所述离子是选自包括H、Li、Na、K、Rb、Fr、F、Cl、Br、I、At、Ne、Kr、Xe、Rn、He、Ar、N、O、以及Cs的组的材料的离子。
4.一种有机发光装置，包括空穴注入层、空穴传输层、以及发光层，其中所述空穴注入层和所述空穴传输层中的至少一种由权利要求1所述的方法形成。
5.一种制造有机发光装置的方法，包括：
在基板上形成阳极；
在所述阳极上形成导电聚合物层；
将遮蔽掩模对齐在所述导电聚合物层上；
通过经所述遮蔽掩模辐照带电粒子束，在所述导电聚合物层中形成导电聚合物图案区域和绝缘区域；
在所述导电聚合物图案层和所述绝缘区域上形成发光层；以及
在所述发光层上形成阴极，
其中所述导电聚合物层由共轭聚合物形成，且
其中所述绝缘区域由所述导电聚合物层的被所述带电粒子束辐照的区域形成，所述导电聚合物图案区域由所述导电聚合物层的未被所述带电粒子束辐照的区域形成。
6.如权利要求5所述的方法，其中所述带电粒子是电子和离子之一。
7.如权利要求6所述的方法，其中所述离子是选自包括H、Li、Na、K、Rb、Fr、F、Cl、Br、I、At、Ne、Kr、Xe、Rn、He、Ar、N、O、以及Cs的组的材料的离子。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10188/05 | 2005-02-03 | ||
| KR1020050010188A KR101182435B1 (ko) | 2005-02-03 | 2005-02-03 | 전도성 고분자 패턴막 및 이를 패터닝 하는 방법 그리고 이를 이용하는 유기전계 발광소자 및 그 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1828974A CN1828974A (zh) | 2006-09-06 |
| CN100594627C true CN100594627C (zh) | 2010-03-17 |
Family
ID=36947179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200610006080A Active CN100594627C (zh) | 2005-02-03 | 2006-01-26 | 构图导电聚合物层的方法、有机发光装置及其制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7704677B2 (zh) |
| JP (1) | JP2006216544A (zh) |
| KR (1) | KR101182435B1 (zh) |
| CN (1) | CN100594627C (zh) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100793358B1 (ko) | 2006-05-03 | 2008-01-11 | 삼성에스디아이 주식회사 | 유기전계발광소자의 제조방법 |
| US7915806B2 (en) * | 2006-12-28 | 2011-03-29 | E.I. Du Pont De Nemours And Company | Electronic device including an organic device layer |
| KR100865485B1 (ko) * | 2007-06-11 | 2008-10-27 | 단국대학교 산학협력단 | 마이크로 웨이브 소스를 이용한 전도성 고분자 막 의 건식식각 방법 |
| KR101052394B1 (ko) | 2008-11-24 | 2011-07-28 | 서울대학교산학협력단 | 잉크젯 프린팅과 기상증착중합법을 이용한 전도성 고분자 패턴 형성 |
| EP2244315A1 (en) | 2009-04-22 | 2010-10-27 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method of manufacturing an organic light emitting diode (OLED) |
| WO2011007296A1 (en) * | 2009-07-16 | 2011-01-20 | Koninklijke Philips Electronics N.V. | Light-emitting device and method of manufacturing a light-emitting device |
| CN102110775B (zh) * | 2010-12-03 | 2012-11-07 | 哈尔滨工业大学深圳研究生院 | 实现半导体聚合物图形化的方法及其应用器件 |
| ITTV20120167A1 (it) * | 2012-08-20 | 2014-02-21 | Spf Logica S R L | Struttura a strati atta a convertire una corrente elettrica in fotoni luminosi o viceversa. |
| KR101455239B1 (ko) * | 2013-04-17 | 2014-10-27 | 에스케이씨 주식회사 | 전극 기판, 이를 포함하는 입력 장치 및 표시 장치, 및 이의 제조방법 |
| DE102013208435A1 (de) * | 2013-05-08 | 2014-11-27 | Siemens Aktiengesellschaft | Folien-Stapelaktor mit integrierten Kunststoff-Elektroden |
| KR101633696B1 (ko) * | 2015-10-30 | 2016-06-28 | 한국원자력연구원 | 유기 발광 소자용 정공 수송층의 제조방법 및 이에 따라 제조되는 정공 수송층을 포함하는 유기 발광 소자 |
| WO2021064958A1 (ja) * | 2019-10-03 | 2021-04-08 | シャープ株式会社 | 表示装置の製造方法および表示装置 |
| US20220045274A1 (en) * | 2020-08-06 | 2022-02-10 | Facebook Technologies Llc | Ofets having organic semiconductor layer with high carrier mobility and in situ isolation |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02103547A (ja) * | 1988-10-13 | 1990-04-16 | Fujitsu Ltd | 導電性層の形成方法 |
| US5198153A (en) * | 1989-05-26 | 1993-03-30 | International Business Machines Corporation | Electrically conductive polymeric |
| JPH06230562A (ja) * | 1993-01-29 | 1994-08-19 | Hitachi Ltd | 転写マスクおよび電子線描画装置 |
| JP3143007B2 (ja) * | 1993-01-29 | 2001-03-07 | 株式会社日立製作所 | 導体の接続方法およびその構造 |
| WO1996008047A2 (en) * | 1994-09-06 | 1996-03-14 | Philips Electronics N.V. | Electroluminescent device comprising a transparent structured electrode layer made from a conductive polymer |
| SG121693A1 (en) | 1996-11-12 | 2006-05-26 | Ibm | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
| JP4043135B2 (ja) * | 1999-03-29 | 2008-02-06 | 株式会社東芝 | 機能素子および多成分多相系高分子成形体 |
| JP2001076870A (ja) * | 1999-09-08 | 2001-03-23 | Toyota Motor Corp | 有機ｅｌ素子の表示パターン形成方法 |
| JP2002203806A (ja) * | 2000-10-31 | 2002-07-19 | Toshiba Corp | 半導体装置の製造方法、ステンシルマスク及びその製造方法 |
| JP2002252164A (ja) * | 2001-02-27 | 2002-09-06 | Riipuru:Kk | 転写用マスク及び転写用マスクの検査方法 |
| KR20030044562A (ko) * | 2001-11-30 | 2003-06-09 | 오리온전기 주식회사 | 유기전기 발광 표시장치를 위한 전도성 고분자의 패터닝방법 |
| JP2004165580A (ja) * | 2002-11-11 | 2004-06-10 | Pd Service:Kk | 転写用マスクと電子ビーム露光装置 |
| US7112113B2 (en) * | 2002-12-25 | 2006-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of display device |
| JP2005166441A (ja) * | 2003-12-02 | 2005-06-23 | Pioneer Electronic Corp | 有機ｅｌパネルおよび有機ｅｌパネルの製造方法 |
-
2005
- 2005-02-03 KR KR1020050010188A patent/KR101182435B1/ko active IP Right Grant
-
2006
- 2006-01-26 CN CN200610006080A patent/CN100594627C/zh active Active
- 2006-01-26 JP JP2006017847A patent/JP2006216544A/ja active Pending
- 2006-02-03 US US11/346,552 patent/US7704677B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101182435B1 (ko) | 2012-09-12 |
| US20060228906A1 (en) | 2006-10-12 |
| KR20060089106A (ko) | 2006-08-08 |
| US7704677B2 (en) | 2010-04-27 |
| JP2006216544A (ja) | 2006-08-17 |
| CN1828974A (zh) | 2006-09-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100594627C (zh) | 构图导电聚合物层的方法、有机发光装置及其制造方法 | |
| US6099746A (en) | Organic electroluminescent device and method for fabricating the same | |
| CN1828969B (zh) | 有机发光器件和白光发射器件 | |
| US20150303393A1 (en) | Organic electroluminescent device and process for preparing the same | |
| US20060061266A1 (en) | Organic light emitting display and method of fabricating the same | |
| KR20020028228A (ko) | 전도성 폴리머 버퍼층을 갖는 대영역 유기 전자 소자 및그 제조 방법 | |
| CN105742495A (zh) | 制造高分辨率有机薄膜图案的方法 | |
| US7573070B2 (en) | Organic light emitting display and method of fabricating the same | |
| JP2009506200A (ja) | 薄膜層の作成方法 | |
| JP2010093068A (ja) | 有機ｅｌ表示装置およびその製造方法 | |
| Islam et al. | A review on fabrication process of organic light emitting diodes | |
| WO2011058957A1 (ja) | 有機エレクトロルミネッセンス素子の製造方法 | |
| TW201240078A (en) | Method of manufacturing organic electroluminescence display device | |
| CN107346776A (zh) | 印刷显示器件及其制作方法和应用 | |
| JP2008075165A (ja) | 透明導電膜形成方法及び有機電界発光素子の製造方法およびマグネトロンスパッタ装置 | |
| JP2012204202A (ja) | 有機エレクトロルミネッセンスパネル及びその製造方法 | |
| KR100623225B1 (ko) | 유기 전계발광 소자 및 그의 제조방법 | |
| KR20030075971A (ko) | 유기 전자 소자의 박막 패턴 형성 방법 | |
| TWI513079B (zh) | 含混合主體之有機發光二極體及其製作方法 | |
| TWI520656B (zh) | 以壓印法形成有機發光二極體之方法 | |
| Hu et al. | Effects of organic acids modified ITO anodes on luminescent properties and stability of OLED devices | |
| KR100666534B1 (ko) | 레이져 전사방법을 사용하는 대면적 유기박막 증착장치 | |
| US6717356B1 (en) | Organic electroluminescent device with trapezoidal walls | |
| KR20010003986A (ko) | 상 분리를 이용한 고효율 고분자 발광소자 | |
| Nüesch et al. | Patterned surface dipole layers for high-contrast electroluminescent displays |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20090109 Address after: Gyeonggi Do, South Korea Applicant after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do, South Korea Applicant before: Samsung SDI Co., Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20090109 |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG MOBILE DISPLAY CO., LTD. Effective date: 20121017 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20121017 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Mobile Display Co., Ltd. |