CN1828974A - 构图导电聚合物层的方法、有机发光装置及其制造方法 - Google Patents
构图导电聚合物层的方法、有机发光装置及其制造方法 Download PDFInfo
- Publication number
- CN1828974A CN1828974A CNA2006100060807A CN200610006080A CN1828974A CN 1828974 A CN1828974 A CN 1828974A CN A2006100060807 A CNA2006100060807 A CN A2006100060807A CN 200610006080 A CN200610006080 A CN 200610006080A CN 1828974 A CN1828974 A CN 1828974A
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- conductive polymer
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- polymer coating
- particle beam
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- 229920001940 conductive polymer Polymers 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000000059 patterning Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims description 42
- 238000000576 coating method Methods 0.000 claims description 42
- 150000002500 ions Chemical class 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 7
- 229920000547 conjugated polymer Polymers 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052792 caesium Inorganic materials 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910052789 astatine Inorganic materials 0.000 claims description 4
- 229910052794 bromium Inorganic materials 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 229910052740 iodine Inorganic materials 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 229910052701 rubidium Inorganic materials 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 48
- 239000011799 hole material Substances 0.000 description 22
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005265 energy consumption Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 229920000767 polyaniline Polymers 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000002322 conducting polymer Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 description 1
- 150000002220 fluorenes Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0329—Intrinsically conductive polymer [ICP]; Semiconductive polymer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0548—Masks
- H05K2203/0557—Non-printed masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/092—Particle beam, e.g. using an electron beam or an ion beam
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1142—Conversion of conductive material into insulating material or into dissolvable compound
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10188/05 | 2005-02-03 | ||
KR1020050010188A KR101182435B1 (ko) | 2005-02-03 | 2005-02-03 | 전도성 고분자 패턴막 및 이를 패터닝 하는 방법 그리고 이를 이용하는 유기전계 발광소자 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1828974A true CN1828974A (zh) | 2006-09-06 |
CN100594627C CN100594627C (zh) | 2010-03-17 |
Family
ID=36947179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200610006080A Active CN100594627C (zh) | 2005-02-03 | 2006-01-26 | 构图导电聚合物层的方法、有机发光装置及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7704677B2 (zh) |
JP (1) | JP2006216544A (zh) |
KR (1) | KR101182435B1 (zh) |
CN (1) | CN100594627C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102110775A (zh) * | 2010-12-03 | 2011-06-29 | 哈尔滨工业大学深圳研究生院 | 实现半导体聚合物图形化的方法及其应用器件 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100793358B1 (ko) | 2006-05-03 | 2008-01-11 | 삼성에스디아이 주식회사 | 유기전계발광소자의 제조방법 |
US7915806B2 (en) * | 2006-12-28 | 2011-03-29 | E.I. Du Pont De Nemours And Company | Electronic device including an organic device layer |
KR100865485B1 (ko) * | 2007-06-11 | 2008-10-27 | 단국대학교 산학협력단 | 마이크로 웨이브 소스를 이용한 전도성 고분자 막 의 건식식각 방법 |
KR101052394B1 (ko) | 2008-11-24 | 2011-07-28 | 서울대학교산학협력단 | 잉크젯 프린팅과 기상증착중합법을 이용한 전도성 고분자 패턴 형성 |
EP2244315A1 (en) | 2009-04-22 | 2010-10-27 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method of manufacturing an organic light emitting diode (OLED) |
WO2011007296A1 (en) * | 2009-07-16 | 2011-01-20 | Koninklijke Philips Electronics N.V. | Light-emitting device and method of manufacturing a light-emitting device |
ITTV20120167A1 (it) * | 2012-08-20 | 2014-02-21 | Spf Logica S R L | Struttura a strati atta a convertire una corrente elettrica in fotoni luminosi o viceversa. |
KR101455239B1 (ko) * | 2013-04-17 | 2014-10-27 | 에스케이씨 주식회사 | 전극 기판, 이를 포함하는 입력 장치 및 표시 장치, 및 이의 제조방법 |
DE102013208435A1 (de) * | 2013-05-08 | 2014-11-27 | Siemens Aktiengesellschaft | Folien-Stapelaktor mit integrierten Kunststoff-Elektroden |
KR101633696B1 (ko) * | 2015-10-30 | 2016-06-28 | 한국원자력연구원 | 유기 발광 소자용 정공 수송층의 제조방법 및 이에 따라 제조되는 정공 수송층을 포함하는 유기 발광 소자 |
US20220384546A1 (en) * | 2019-10-03 | 2022-12-01 | Sharp Kabushiki Kaisha | Method for manufacturing display device and display device |
US20220045274A1 (en) * | 2020-08-06 | 2022-02-10 | Facebook Technologies Llc | Ofets having organic semiconductor layer with high carrier mobility and in situ isolation |
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JPH02103547A (ja) * | 1988-10-13 | 1990-04-16 | Fujitsu Ltd | 導電性層の形成方法 |
US5198153A (en) * | 1989-05-26 | 1993-03-30 | International Business Machines Corporation | Electrically conductive polymeric |
JP3143007B2 (ja) * | 1993-01-29 | 2001-03-07 | 株式会社日立製作所 | 導体の接続方法およびその構造 |
JPH06230562A (ja) * | 1993-01-29 | 1994-08-19 | Hitachi Ltd | 転写マスクおよび電子線描画装置 |
EP1271669A3 (en) * | 1994-09-06 | 2005-01-26 | Koninklijke Philips Electronics N.V. | Electroluminescent device comprising a transparent structured electrode layer made from a conductive polymer |
KR100304402B1 (ko) | 1996-11-12 | 2002-03-08 | 포만 제프리 엘 | 전기전도성중합체의패턴및그의전극또는전기접점으로서의용도 |
JP4043135B2 (ja) * | 1999-03-29 | 2008-02-06 | 株式会社東芝 | 機能素子および多成分多相系高分子成形体 |
JP2001076870A (ja) * | 1999-09-08 | 2001-03-23 | Toyota Motor Corp | 有機el素子の表示パターン形成方法 |
JP2002203806A (ja) * | 2000-10-31 | 2002-07-19 | Toshiba Corp | 半導体装置の製造方法、ステンシルマスク及びその製造方法 |
JP2002252164A (ja) * | 2001-02-27 | 2002-09-06 | Riipuru:Kk | 転写用マスク及び転写用マスクの検査方法 |
KR20030044562A (ko) * | 2001-11-30 | 2003-06-09 | 오리온전기 주식회사 | 유기전기 발광 표시장치를 위한 전도성 고분자의 패터닝방법 |
JP2004165580A (ja) * | 2002-11-11 | 2004-06-10 | Pd Service:Kk | 転写用マスクと電子ビーム露光装置 |
US7112113B2 (en) * | 2002-12-25 | 2006-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of display device |
JP2005166441A (ja) * | 2003-12-02 | 2005-06-23 | Pioneer Electronic Corp | 有機elパネルおよび有機elパネルの製造方法 |
-
2005
- 2005-02-03 KR KR1020050010188A patent/KR101182435B1/ko active IP Right Grant
-
2006
- 2006-01-26 CN CN200610006080A patent/CN100594627C/zh active Active
- 2006-01-26 JP JP2006017847A patent/JP2006216544A/ja active Pending
- 2006-02-03 US US11/346,552 patent/US7704677B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102110775A (zh) * | 2010-12-03 | 2011-06-29 | 哈尔滨工业大学深圳研究生院 | 实现半导体聚合物图形化的方法及其应用器件 |
CN102110775B (zh) * | 2010-12-03 | 2012-11-07 | 哈尔滨工业大学深圳研究生院 | 实现半导体聚合物图形化的方法及其应用器件 |
Also Published As
Publication number | Publication date |
---|---|
KR101182435B1 (ko) | 2012-09-12 |
CN100594627C (zh) | 2010-03-17 |
KR20060089106A (ko) | 2006-08-08 |
JP2006216544A (ja) | 2006-08-17 |
US7704677B2 (en) | 2010-04-27 |
US20060228906A1 (en) | 2006-10-12 |
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