CN100582299C - 用于对室清洁处理进行控制的方法和处理系统 - Google Patents

用于对室清洁处理进行控制的方法和处理系统 Download PDF

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Publication number
CN100582299C
CN100582299C CN200580011000A CN200580011000A CN100582299C CN 100582299 C CN100582299 C CN 100582299C CN 200580011000 A CN200580011000 A CN 200580011000A CN 200580011000 A CN200580011000 A CN 200580011000A CN 100582299 C CN100582299 C CN 100582299C
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CN
China
Prior art keywords
system component
temperature
clean
chamber
adjusted
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Expired - Fee Related
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CN200580011000A
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English (en)
Chinese (zh)
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CN1942603A (zh
Inventor
以马利·盖德帝
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1942603A publication Critical patent/CN1942603A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Epidemiology (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN200580011000A 2004-06-17 2005-04-14 用于对室清洁处理进行控制的方法和处理系统 Expired - Fee Related CN100582299C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/710,086 2004-06-17
US10/710,086 US20050279384A1 (en) 2004-06-17 2004-06-17 Method and processing system for controlling a chamber cleaning process

Publications (2)

Publication Number Publication Date
CN1942603A CN1942603A (zh) 2007-04-04
CN100582299C true CN100582299C (zh) 2010-01-20

Family

ID=34969049

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200580011000A Expired - Fee Related CN100582299C (zh) 2004-06-17 2005-04-14 用于对室清洁处理进行控制的方法和处理系统

Country Status (6)

Country Link
US (1) US20050279384A1 (https=)
JP (2) JP5107032B2 (https=)
KR (2) KR101581094B1 (https=)
CN (1) CN100582299C (https=)
TW (1) TWI293481B (https=)
WO (1) WO2006006991A1 (https=)

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US7806126B1 (en) * 2002-09-30 2010-10-05 Lam Research Corporation Substrate proximity drying using in-situ local heating of substrate and substrate carrier point of contact, and methods, apparatus, and systems for implementing the same
KR20070095882A (ko) * 2004-11-09 2007-10-01 산타리스 팔마 에이/에스 Ｌｎａ 올리고뉴클레오티드 및 암의 치료
TWI365919B (en) * 2004-12-28 2012-06-11 Tokyo Electron Ltd Film formation apparatus and method of using the same
US20080191153A1 (en) * 2005-03-16 2008-08-14 Advanced Technology Materials, Inc. System For Delivery Of Reagents From Solid Sources Thereof
JP4671355B2 (ja) 2006-03-15 2011-04-13 東京エレクトロン株式会社 基板処理装置のクリーニング方法，基板処理装置，プログラムを記録した記録媒体
SG171606A1 (en) * 2006-04-26 2011-06-29 Advanced Tech Materials Cleaning of semiconductor processing systems
US7879184B2 (en) 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
US8034181B2 (en) * 2007-02-28 2011-10-11 Hitachi High-Technologies Corporation Plasma processing apparatus
CN101809717B (zh) 2007-09-25 2012-10-10 朗姆研究公司 用于等离子处理设备的喷头电极总成的温度控制模块
US20090163033A1 (en) * 2007-12-21 2009-06-25 Guowen Ding Methods for extending chamber component life time
WO2012070560A1 (ja) * 2010-11-24 2012-05-31 株式会社 アルバック 成膜装置及び成膜装置のクリーニング方法
CN102691050B (zh) * 2012-06-11 2016-04-13 上海华虹宏力半导体制造有限公司 一种钨化学气相沉积系统的清洗方法
JP6055637B2 (ja) * 2012-09-20 2016-12-27 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム
JP6123688B2 (ja) * 2014-01-29 2017-05-10 東京エレクトロン株式会社 成膜装置
JP6347543B2 (ja) * 2014-06-30 2018-06-27 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム
US20160056032A1 (en) * 2014-08-22 2016-02-25 Lam Research Corporation Methods and apparatuses for stable deposition rate control in low temperature ald systems by showerhead active heating and/or pedestal cooling
US10325789B2 (en) * 2016-01-21 2019-06-18 Applied Materials, Inc. High productivity soak anneal system
JP6524944B2 (ja) * 2016-03-18 2019-06-05 信越半導体株式会社 気相エッチング方法及びエピタキシャル基板の製造方法
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
WO2018035418A1 (en) * 2016-08-19 2018-02-22 Applied Materials, Inc. Temperature sensor for end point detection during plasma enhanced chemical vapor deposition chamber clean
JP7094131B2 (ja) * 2018-04-03 2022-07-01 東京エレクトロン株式会社 クリーニング方法
WO2020185360A1 (en) * 2019-03-08 2020-09-17 Applied Materials, Inc. Porous showerhead for a processing chamber
JP7267843B2 (ja) * 2019-06-07 2023-05-02 株式会社アルバック プラズマ処理装置
JP7198939B2 (ja) * 2019-09-20 2023-01-04 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
JP7306195B2 (ja) * 2019-09-27 2023-07-11 東京エレクトロン株式会社 基板を処理する装置及びステージをクリーニングする方法
WO2021126889A1 (en) * 2019-12-17 2021-06-24 Applied Materials, Inc. Surface profiling and texturing of chamber components
DE102020107518A1 (de) * 2020-03-18 2021-09-23 Aixtron Se Verfahren zum Ermitteln des Endes eines Reinigungsprozesses der Prozesskammer eines MOCVD-Reaktors
JP7515420B2 (ja) * 2021-01-12 2024-07-12 東京エレクトロン株式会社 クリーニング方法及び処理装置
KR20250155606A (ko) * 2023-03-14 2025-10-30 어플라이드 머티어리얼스, 인코포레이티드 개선된 프로세스 챔버 세정

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US6660101B1 (en) * 1999-09-09 2003-12-09 Tokyo Electron Limited Method and apparatus for cleaning film deposition device
US6738683B1 (en) * 2000-09-05 2004-05-18 Cxe Equipment Services, Llc Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor

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US5846373A (en) * 1996-06-28 1998-12-08 Lam Research Corporation Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber
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Also Published As

Publication number Publication date
JP5107032B2 (ja) 2012-12-26
CN1942603A (zh) 2007-04-04
TW200605210A (en) 2006-02-01
WO2006006991A1 (en) 2006-01-19
TWI293481B (en) 2008-02-11
US20050279384A1 (en) 2005-12-22
KR20130093689A (ko) 2013-08-22
JP2008503089A (ja) 2008-01-31
JP2012064970A (ja) 2012-03-29
KR101581094B1 (ko) 2015-12-30
KR20070026418A (ko) 2007-03-08

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