KR101581094B1 - 챔버 세정 공정을 제어하기 위한 방법 및 그 처리 시스템 - Google Patents

챔버 세정 공정을 제어하기 위한 방법 및 그 처리 시스템 Download PDF

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Publication number
KR101581094B1
KR101581094B1 KR1020137020104A KR20137020104A KR101581094B1 KR 101581094 B1 KR101581094 B1 KR 101581094B1 KR 1020137020104 A KR1020137020104 A KR 1020137020104A KR 20137020104 A KR20137020104 A KR 20137020104A KR 101581094 B1 KR101581094 B1 KR 101581094B1
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South Korea
Prior art keywords
delete delete
temperature
cleaning process
system components
substrate holder
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KR1020137020104A
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English (en)
Korean (ko)
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KR20130093689A (ko
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엠마누엘 귀도띠
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도쿄엘렉트론가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Epidemiology (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020137020104A 2004-06-17 2005-04-14 챔버 세정 공정을 제어하기 위한 방법 및 그 처리 시스템 Expired - Fee Related KR101581094B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/710,086 US20050279384A1 (en) 2004-06-17 2004-06-17 Method and processing system for controlling a chamber cleaning process
US10/710,086 2004-06-17
PCT/US2005/012804 WO2006006991A1 (en) 2004-06-17 2005-04-14 Method and processing system for controlling a chamber cleaning process

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020067019036A Division KR20070026418A (ko) 2004-06-17 2005-04-14 챔버 세정 공정을 제어하기 위한 방법 및 그 처리 시스템

Publications (2)

Publication Number Publication Date
KR20130093689A KR20130093689A (ko) 2013-08-22
KR101581094B1 true KR101581094B1 (ko) 2015-12-30

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020137020104A Expired - Fee Related KR101581094B1 (ko) 2004-06-17 2005-04-14 챔버 세정 공정을 제어하기 위한 방법 및 그 처리 시스템
KR1020067019036A Ceased KR20070026418A (ko) 2004-06-17 2005-04-14 챔버 세정 공정을 제어하기 위한 방법 및 그 처리 시스템

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020067019036A Ceased KR20070026418A (ko) 2004-06-17 2005-04-14 챔버 세정 공정을 제어하기 위한 방법 및 그 처리 시스템

Country Status (6)

Country Link
US (1) US20050279384A1 (https=)
JP (2) JP5107032B2 (https=)
KR (2) KR101581094B1 (https=)
CN (1) CN100582299C (https=)
TW (1) TWI293481B (https=)
WO (1) WO2006006991A1 (https=)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4592867B2 (ja) * 2000-03-27 2010-12-08 株式会社半導体エネルギー研究所 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法
US7806126B1 (en) * 2002-09-30 2010-10-05 Lam Research Corporation Substrate proximity drying using in-situ local heating of substrate and substrate carrier point of contact, and methods, apparatus, and systems for implementing the same
WO2006050732A2 (en) * 2004-11-09 2006-05-18 Santaris Pharma A/S Lna oligonucleotides and the treatment of cancer
TWI365919B (en) * 2004-12-28 2012-06-11 Tokyo Electron Ltd Film formation apparatus and method of using the same
CN101495190B (zh) * 2005-03-16 2013-05-01 高级技术材料公司 用于从固体源递送试剂的系统
JP4671355B2 (ja) 2006-03-15 2011-04-13 東京エレクトロン株式会社 基板処理装置のクリーニング方法，基板処理装置，プログラムを記録した記録媒体
KR101467585B1 (ko) * 2006-04-26 2014-12-01 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 반도체 공정 시스템의 세정
US7879184B2 (en) * 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
US8034181B2 (en) * 2007-02-28 2011-10-11 Hitachi High-Technologies Corporation Plasma processing apparatus
WO2009042137A2 (en) 2007-09-25 2009-04-02 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
US20090163033A1 (en) * 2007-12-21 2009-06-25 Guowen Ding Methods for extending chamber component life time
JP5654613B2 (ja) * 2010-11-24 2015-01-14 株式会社アルバック 成膜装置及び成膜装置のクリーニング方法
CN102691050B (zh) * 2012-06-11 2016-04-13 上海华虹宏力半导体制造有限公司 一种钨化学气相沉积系统的清洗方法
JP6055637B2 (ja) 2012-09-20 2016-12-27 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム
JP6123688B2 (ja) * 2014-01-29 2017-05-10 東京エレクトロン株式会社 成膜装置
JP6347543B2 (ja) * 2014-06-30 2018-06-27 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム
US20160056032A1 (en) * 2014-08-22 2016-02-25 Lam Research Corporation Methods and apparatuses for stable deposition rate control in low temperature ald systems by showerhead active heating and/or pedestal cooling
US10325789B2 (en) * 2016-01-21 2019-06-18 Applied Materials, Inc. High productivity soak anneal system
JP6524944B2 (ja) * 2016-03-18 2019-06-05 信越半導体株式会社 気相エッチング方法及びエピタキシャル基板の製造方法
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
KR20190031350A (ko) * 2016-08-19 2019-03-25 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 강화 화학 기상 증착 챔버 세정 동안의 엔드 포인트 검출을 위한 온도 센서
JP7094131B2 (ja) * 2018-04-03 2022-07-01 東京エレクトロン株式会社 クリーニング方法
JP7680361B2 (ja) * 2019-03-08 2025-05-20 アプライド マテリアルズ インコーポレイテッド 処理チャンバ用の多孔性シャワーヘッド
JP7267843B2 (ja) * 2019-06-07 2023-05-02 株式会社アルバック プラズマ処理装置
WO2021053836A1 (ja) * 2019-09-20 2021-03-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP7306195B2 (ja) * 2019-09-27 2023-07-11 東京エレクトロン株式会社 基板を処理する装置及びステージをクリーニングする方法
CN114830312A (zh) * 2019-12-17 2022-07-29 应用材料公司 腔室部件的表面成形和纹理化
DE102020107518A1 (de) * 2020-03-18 2021-09-23 Aixtron Se Verfahren zum Ermitteln des Endes eines Reinigungsprozesses der Prozesskammer eines MOCVD-Reaktors
JP7515420B2 (ja) * 2021-01-12 2024-07-12 東京エレクトロン株式会社 クリーニング方法及び処理装置
WO2024191570A1 (en) * 2023-03-14 2024-09-19 Applied Materials, Inc. Improved process chamber clean

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6083323A (en) * 1994-09-30 2000-07-04 Applied Materials, Inc. Method for controlling the temperature of the walls of a reaction chamber during processing

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4963423A (en) * 1987-10-08 1990-10-16 Anelva Corporation Method for forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means
JP3681998B2 (ja) * 1994-08-25 2005-08-10 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
JPH08225945A (ja) * 1994-12-21 1996-09-03 Canon Inc 堆積膜形成方法及び堆積膜形成装置、並びに堆積膜形成装置のクリーニング方法
JPH08193271A (ja) * 1995-01-13 1996-07-30 Aneruba Kk その場クリーニング処理後の予備的処理完了点検出装置および完了点検出法
JP3548634B2 (ja) * 1995-07-14 2004-07-28 東京エレクトロン株式会社 成膜装置及びこの装置における堆積膜除去方法
US6231776B1 (en) * 1995-12-04 2001-05-15 Daniel L. Flamm Multi-temperature processing
US5846373A (en) * 1996-06-28 1998-12-08 Lam Research Corporation Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber
JPH10163116A (ja) * 1996-12-03 1998-06-19 Toshiba Corp 半導体製造装置
US5849092A (en) * 1997-02-25 1998-12-15 Applied Materials, Inc. Process for chlorine trifluoride chamber cleaning
JPH11345778A (ja) * 1998-05-29 1999-12-14 Tokyo Electron Ltd 成膜装置のクリーニング方法及びそのクリーニング機構
EP1125314A1 (en) * 1998-07-10 2001-08-22 Applied Materials, Inc. Improved endpoint detection for substrate fabrication processes
US6358327B1 (en) * 1999-06-29 2002-03-19 Applied Materials, Inc. Method for endpoint detection using throttle valve position
JP2001051545A (ja) * 1999-08-05 2001-02-23 Ricoh Co Ltd 画像形成装置
JP2001081545A (ja) * 1999-09-09 2001-03-27 Tokyo Electron Ltd 成膜装置のクリーニング方法及びクリーニング装置
US6738683B1 (en) * 2000-09-05 2004-05-18 Cxe Equipment Services, Llc Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6083323A (en) * 1994-09-30 2000-07-04 Applied Materials, Inc. Method for controlling the temperature of the walls of a reaction chamber during processing

Also Published As

Publication number Publication date
CN1942603A (zh) 2007-04-04
US20050279384A1 (en) 2005-12-22
JP2012064970A (ja) 2012-03-29
CN100582299C (zh) 2010-01-20
KR20130093689A (ko) 2013-08-22
TWI293481B (en) 2008-02-11
TW200605210A (en) 2006-02-01
JP5107032B2 (ja) 2012-12-26
JP2008503089A (ja) 2008-01-31
KR20070026418A (ko) 2007-03-08
WO2006006991A1 (en) 2006-01-19

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