TWI293481B - Method and processing system for controlling a chamber cleaning process - Google Patents

Method and processing system for controlling a chamber cleaning process Download PDF

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Publication number
TWI293481B
TWI293481B TW094118174A TW94118174A TWI293481B TW I293481 B TWI293481 B TW I293481B TW 094118174 A TW094118174 A TW 094118174A TW 94118174 A TW94118174 A TW 94118174A TW I293481 B TWI293481 B TW I293481B
Authority
TW
Taiwan
Prior art keywords
chamber
cleaning process
processing
control method
temperature
Prior art date
Application number
TW094118174A
Other languages
English (en)
Chinese (zh)
Other versions
TW200605210A (en
Inventor
Emmanuel P Guidotti
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200605210A publication Critical patent/TW200605210A/zh
Application granted granted Critical
Publication of TWI293481B publication Critical patent/TWI293481B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Epidemiology (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW094118174A 2004-06-17 2005-06-02 Method and processing system for controlling a chamber cleaning process TWI293481B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/710,086 US20050279384A1 (en) 2004-06-17 2004-06-17 Method and processing system for controlling a chamber cleaning process

Publications (2)

Publication Number Publication Date
TW200605210A TW200605210A (en) 2006-02-01
TWI293481B true TWI293481B (en) 2008-02-11

Family

ID=34969049

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094118174A TWI293481B (en) 2004-06-17 2005-06-02 Method and processing system for controlling a chamber cleaning process

Country Status (6)

Country Link
US (1) US20050279384A1 (https=)
JP (2) JP5107032B2 (https=)
KR (2) KR101581094B1 (https=)
CN (1) CN100582299C (https=)
TW (1) TWI293481B (https=)
WO (1) WO2006006991A1 (https=)

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TWI713677B (zh) * 2016-01-21 2020-12-21 美商應用材料股份有限公司 高生產力浸泡退火系統

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US7806126B1 (en) * 2002-09-30 2010-10-05 Lam Research Corporation Substrate proximity drying using in-situ local heating of substrate and substrate carrier point of contact, and methods, apparatus, and systems for implementing the same
WO2006050732A2 (en) * 2004-11-09 2006-05-18 Santaris Pharma A/S Lna oligonucleotides and the treatment of cancer
TWI365919B (en) * 2004-12-28 2012-06-11 Tokyo Electron Ltd Film formation apparatus and method of using the same
CN101495190B (zh) * 2005-03-16 2013-05-01 高级技术材料公司 用于从固体源递送试剂的系统
JP4671355B2 (ja) 2006-03-15 2011-04-13 東京エレクトロン株式会社 基板処理装置のクリーニング方法，基板処理装置，プログラムを記録した記録媒体
KR101467585B1 (ko) * 2006-04-26 2014-12-01 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 반도체 공정 시스템의 세정
US7879184B2 (en) * 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
US8034181B2 (en) * 2007-02-28 2011-10-11 Hitachi High-Technologies Corporation Plasma processing apparatus
WO2009042137A2 (en) 2007-09-25 2009-04-02 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
US20090163033A1 (en) * 2007-12-21 2009-06-25 Guowen Ding Methods for extending chamber component life time
JP5654613B2 (ja) * 2010-11-24 2015-01-14 株式会社アルバック 成膜装置及び成膜装置のクリーニング方法
CN102691050B (zh) * 2012-06-11 2016-04-13 上海华虹宏力半导体制造有限公司 一种钨化学气相沉积系统的清洗方法
JP6055637B2 (ja) 2012-09-20 2016-12-27 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム
JP6123688B2 (ja) * 2014-01-29 2017-05-10 東京エレクトロン株式会社 成膜装置
JP6347543B2 (ja) * 2014-06-30 2018-06-27 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム
US20160056032A1 (en) * 2014-08-22 2016-02-25 Lam Research Corporation Methods and apparatuses for stable deposition rate control in low temperature ald systems by showerhead active heating and/or pedestal cooling
JP6524944B2 (ja) * 2016-03-18 2019-06-05 信越半導体株式会社 気相エッチング方法及びエピタキシャル基板の製造方法
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
KR20190031350A (ko) * 2016-08-19 2019-03-25 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 강화 화학 기상 증착 챔버 세정 동안의 엔드 포인트 검출을 위한 온도 센서
JP7094131B2 (ja) * 2018-04-03 2022-07-01 東京エレクトロン株式会社 クリーニング方法
JP7680361B2 (ja) * 2019-03-08 2025-05-20 アプライド マテリアルズ インコーポレイテッド 処理チャンバ用の多孔性シャワーヘッド
JP7267843B2 (ja) * 2019-06-07 2023-05-02 株式会社アルバック プラズマ処理装置
WO2021053836A1 (ja) * 2019-09-20 2021-03-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP7306195B2 (ja) * 2019-09-27 2023-07-11 東京エレクトロン株式会社 基板を処理する装置及びステージをクリーニングする方法
CN114830312A (zh) * 2019-12-17 2022-07-29 应用材料公司 腔室部件的表面成形和纹理化
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JP7515420B2 (ja) * 2021-01-12 2024-07-12 東京エレクトロン株式会社 クリーニング方法及び処理装置
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Publication number Priority date Publication date Assignee Title
TWI713677B (zh) * 2016-01-21 2020-12-21 美商應用材料股份有限公司 高生產力浸泡退火系統

Also Published As

Publication number Publication date
CN1942603A (zh) 2007-04-04
US20050279384A1 (en) 2005-12-22
JP2012064970A (ja) 2012-03-29
CN100582299C (zh) 2010-01-20
KR20130093689A (ko) 2013-08-22
KR101581094B1 (ko) 2015-12-30
TW200605210A (en) 2006-02-01
JP5107032B2 (ja) 2012-12-26
JP2008503089A (ja) 2008-01-31
KR20070026418A (ko) 2007-03-08
WO2006006991A1 (en) 2006-01-19

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