CN100576446C - 回流处理方法以及tft的制造方法 - Google Patents

回流处理方法以及tft的制造方法 Download PDF

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Publication number
CN100576446C
CN100576446C CN200810003524A CN200810003524A CN100576446C CN 100576446 C CN100576446 C CN 100576446C CN 200810003524 A CN200810003524 A CN 200810003524A CN 200810003524 A CN200810003524 A CN 200810003524A CN 100576446 C CN100576446 C CN 100576446C
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CN
China
Prior art keywords
resist mask
resist
electrode
wiring
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200810003524A
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English (en)
Chinese (zh)
Other versions
CN101231947A (zh
Inventor
麻生丰
白石雅敏
田中志信
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101231947A publication Critical patent/CN101231947A/zh
Application granted granted Critical
Publication of CN100576446C publication Critical patent/CN100576446C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN200810003524A 2007-01-19 2008-01-18 回流处理方法以及tft的制造方法 Expired - Fee Related CN100576446C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007010865 2007-01-19
JP2007010865A JP4563409B2 (ja) 2007-01-19 2007-01-19 リフロー処理方法およびｔｆｔの製造方法

Publications (2)

Publication Number Publication Date
CN101231947A CN101231947A (zh) 2008-07-30
CN100576446C true CN100576446C (zh) 2009-12-30

Family

ID=39704229

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810003524A Expired - Fee Related CN100576446C (zh) 2007-01-19 2008-01-18 回流处理方法以及tft的制造方法

Country Status (4)

Country Link
JP (1) JP4563409B2 (ko)
KR (1) KR20080068590A (ko)
CN (1) CN100576446C (ko)
TW (1) TW200837833A (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5429590B2 (ja) * 2007-07-10 2014-02-26 Ｎｌｔテクノロジー株式会社 ハーフトーンマスク
US8441012B2 (en) 2009-08-20 2013-05-14 Sharp Kabushiki Kaisha Array substrate, method for manufacturing array substrate, and display device
CN102455593B (zh) * 2010-10-25 2013-10-09 京东方科技集团股份有限公司 光刻胶图案的形成方法和阵列基板的制造方法
EP2951856B1 (en) * 2013-01-29 2019-05-22 Hewlett-Packard Development Company, L.P. Interconnects through dielectric vias
JP6211416B2 (ja) * 2013-12-27 2017-10-11 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタの製造方法
US20160260731A1 (en) * 2015-03-03 2016-09-08 Kabushiki Kaisha Toshiba Semiconductor device, manufacturing method for a semiconductor device, and nontransitory computer readable medium storing a pattern generating program
US10475947B2 (en) 2015-09-16 2019-11-12 Sharp Kabushiki Kaisha Photovoltaic device and method of manufacturing same
KR102602193B1 (ko) 2016-08-12 2023-11-15 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
CN107104044A (zh) * 2017-05-12 2017-08-29 京东方科技集团股份有限公司 一种电极制作方法及阵列基板的制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2640910B2 (ja) * 1993-07-14 1997-08-13 株式会社フロンテック 電子素子およびその製造方法
US6493048B1 (en) * 1998-10-21 2002-12-10 Samsung Electronics Co., Ltd. Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
JP3616584B2 (ja) * 2000-06-12 2005-02-02 鹿児島日本電気株式会社 パターン形成方法及びそれを用いた表示装置の製造方法
TWI256732B (en) * 2002-08-30 2006-06-11 Sharp Kk Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manufacturing method of liquid crystal display apparatus

Also Published As

Publication number Publication date
KR20080068590A (ko) 2008-07-23
JP4563409B2 (ja) 2010-10-13
CN101231947A (zh) 2008-07-30
JP2008177443A (ja) 2008-07-31
TW200837833A (en) 2008-09-16

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091230

Termination date: 20120118