WO2008056610A1 - Procédé de refusion, procédé de formation de motif et procédé de fabrication d'un transistor à couches minces ( tft ) - Google Patents

Procédé de refusion, procédé de formation de motif et procédé de fabrication d'un transistor à couches minces ( tft ) Download PDF

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Publication number
WO2008056610A1
WO2008056610A1 PCT/JP2007/071402 JP2007071402W WO2008056610A1 WO 2008056610 A1 WO2008056610 A1 WO 2008056610A1 JP 2007071402 W JP2007071402 W JP 2007071402W WO 2008056610 A1 WO2008056610 A1 WO 2008056610A1
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WO
WIPO (PCT)
Prior art keywords
film
resist
light
reflow
exposed
Prior art date
Application number
PCT/JP2007/071402
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English (en)
Japanese (ja)
Inventor
Yutaka Asou
Original Assignee
Tokyo Electron Limited
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Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2008056610A1 publication Critical patent/WO2008056610A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Definitions

  • the present invention relates to a resist reflow method that can be applied in the manufacturing process of, for example, a thin film transistor (TFT), a pattern forming method using the resist, and a TFT manufacturing method.
  • TFT thin film transistor
  • An active matrix liquid crystal display device holds a liquid crystal sandwiched between a TFT substrate on which a thin film transistor (TFT) is formed and a counter substrate on which a color filter is formed, and applies a voltage selectively to each pixel. It is configured to be able to.
  • TFT substrate on which a thin film transistor (TFT) is formed
  • counter substrate on which a color filter is formed
  • a voltage selectively to each pixel It is configured to be able to.
  • a pattern of a photosensitive material such as a photoresist is repeatedly performed by a photolithography process, and thus a mask pattern is required for each photolithography process.
  • the reflow technique has an advantage that the number of photolithography processes can be reduced and the consumption of the resist can be reduced.
  • it is necessary to soften the already dried and solidified resist, so that a relatively long process time is required and the throughput of TFT manufacturing is reduced.
  • An object of the present invention is to provide a reflow method and a mask pattern capable of speeding up resist fluidization and improving throughput in reflow processing and adjusting the reflow progress speed in the surface of the object to be processed. It is in providing the formation method of TFT and the manufacturing method of TFT
  • a lower layer film, an exposed region in which the lower layer film is exposed above the lower layer film, and a covered region in which the lower layer film is coated are formed.
  • a resist film is formed in an upper layer than an etching target film of an object to be processed, the resist film is exposed, and the exposed resist film is formed.
  • Developing a resist pattern by developing, locally irradiating the object to be processed, and after irradiating light, the resist of the resist film is softened and reflowed.
  • the second resist is removed from the target region of the film to be etched, which is re-exposed by removing the resist and removing the deformed resist. It includes performing the ring, a patterning how is provided.
  • a gate electrode is formed on a substrate, a gate insulating film covering the gate electrode is formed, and on the gate insulating film, a — Deposit Si film, Si film for ohmic contact and source / drain metal film, form a resist film on the source / drain metal film, and apply the resist film to a predetermined exposure mask.
  • the source electrode resist mask and the drain electrode resist mask as a mask to form a source electrode metal film and a drain electrode metal film, And at least a surface region of the resist film including a position above the metal film for the source electrode and the metal film for the drain electrode, and a channel region between the metal film for the source electrode and the metal film for the drain electrode.
  • Reflow treatment for covering the Si film for ohmic contact in the recess for the channel region between the film with a resist deformed by reflow, the resist after deformation, the metal film for source electrode, and the Etching the lower layer of the ohmic contact Si film and the a-Si film using the metal film for the drain electrode as a mask, and removing the resist after the deformation, the metal film for the source electrode And exposing the ohmic contact Si film again in the recess for the channel region between the drain electrode metal film and the drain electrode metal film, and using the source electrode metal film and the drain electrode metal film as a mask, Etching the Si film for ohmic contact exposed in the recess for the channel region between them, There is provided.
  • a storage medium that operates on a computer and stores a program for controlling a reflow processing system, the program comprising: a lower layer film; and the lower layer film Preparing an object to be processed having a resist film patterned to form an exposed region where the lower layer film is exposed on the upper layer and a covered region covered with the lower layer film; A reflow method is performed that includes locally irradiating the processing body with light, and then covering part or all of the exposed region by softening and flowing the resist film.
  • a storage medium for controlling the reflow processing system is provided.
  • a light-shielding plate that restricts the passage of light is provided between the mounting table on which the object to be processed is mounted and the light source, and locally with respect to the object to be processed.
  • Light for light irradiation treatment An irradiation unit; a reflow processing unit for softening and fluidizing a resist formed on the object to be processed in a solvent atmosphere; a lower layer film; an exposed region in which the lower layer film is exposed above the lower layer film;
  • the object to be processed having a resist film patterned so as to form a coating region coated with an underlayer film is irradiated with light locally, and then the resist film is softened and flowed
  • a reflow processing system including a control unit that controls to cover a part or all of the exposed region.
  • the object to be processed prior to the reflow process, is irradiated with light, for example, ultraviolet rays, to modify the exposed region of the lower layer film, thereby speeding up the resist flow and performing the reflow process.
  • the reflow time can be shortened.
  • the reflow speed can be controlled for each part within the surface of the object to be processed.
  • FIG. 1 is a schematic diagram showing a reflow processing system in which a reflow method of the present invention is implemented.
  • FIG. 2 is a schematic diagram showing a schematic configuration of a UV irradiation unit (UV) mounted on the reflow system of FIG.
  • UV UV irradiation unit
  • FIG. 3 is a plan view showing a schematic configuration of a UV irradiation unit (UV) mounted on the reflow system of FIG.
  • UV UV irradiation unit
  • FIG. 4 is a cross-sectional view showing a schematic configuration of a reflow processing unit (REFLW) mounted on the reflow processing system of FIG.
  • REFLW reflow processing unit
  • FIG. 5A is a perspective view illustrating the principle when performing UV irradiation.
  • FIG. 5B is an enlarged plan view showing a portion indicated by reference sign A of the substrate shown in FIG. 5A.
  • FIG. 6 is a flowchart showing an example of a manufacturing method of a TFT element for a liquid crystal display device to which the reflow method of the present invention is applied.
  • FIG. 7A is a process cross-sectional view for explaining a manufacturing method of the TFT element of FIG.
  • FIG. 7B is a process cross-sectional view for explaining the manufacturing method of the TFT element of FIG. 6.
  • FIG. 7B is a process cross-sectional view for explaining the manufacturing method of the TFT element of FIG. 6.
  • FIG. 7C is a process cross-sectional view for explaining the manufacturing method of the TFT element of FIG.
  • FIG. 7D is a process cross-sectional view for explaining the manufacturing method of the TFT element of FIG. 6.
  • FIG. 7E is a process cross-sectional view for explaining the manufacturing method of the TFT element of FIG. 6.
  • FIG. 7E is a process cross-sectional view for explaining the manufacturing method of the TFT element of FIG. 6.
  • FIG. 7F is a process cross-sectional view for explaining the manufacturing method of the TFT element of FIG.
  • FIG. 7G is a process cross-sectional view for explaining the manufacturing method of the TFT element of FIG.
  • FIG. 7H is a process cross-sectional view for explaining the manufacturing method of the TFT element of FIG.
  • FIG. 71 is a process cross-sectional view for explaining the manufacturing method of the TFT element of FIG. 6.
  • FIG. 71 is a process cross-sectional view for explaining the manufacturing method of the TFT element of FIG. 6.
  • FIG. 7J is a process cross-sectional view for explaining the manufacturing method of the TFT element of FIG.
  • FIG. 7K is a process cross-sectional view for explaining the manufacturing method of the TFT element of FIG.
  • FIG. 1 is a schematic plan view showing an entire reflow processing system that can be suitably used in the reflow method of the present invention.
  • the resist film formed on the surface of the LCD glass substrate (hereinafter simply referred to as “substrate”) G is softened and deformed after development, and reused as an etching mask for etching the underlying film
  • a reflow processing unit including a reflow processing unit for performing reflow processing and a UV irradiation unit for performing ultraviolet irradiation prior to the reflow processing will be described.
  • the reflow processing system 100 is configured so that the substrate G can be transferred to / from an external resist coating / development processing system, exposure device, etching device, ashing device, etc. via a substrate transfer line (not shown). It has been done.
  • the reflow processing system 100 includes a cassette station (loading / unloading unit) 1 on which a cassette C that accommodates a plurality of substrates G is placed, a reflow processing on the substrates G, and an ultraviolet irradiation process that is performed prior to the reflow processing.
  • a processing station (processing unit) 2 including a plurality of processing units for performing a series of processing, and a control unit 3 that controls each component of the reflow processing system 100 are provided.
  • the longitudinal direction of the reflow treatment system 100 is the X direction
  • the direction orthogonal to the X direction on the horizontal plane is the Y direction.
  • the cassette station 1 is disposed adjacent to one end of the processing station 2.
  • This cassette station 1 is provided with a transfer device 11 for loading and unloading the substrate G between the cassette C and the processing station 2, and the cassette station 1 is loaded into and out of the cassette C from the outside. Is done.
  • the transport device 11 has a transport arm 11a that can move on a transport path 10 provided along the Y direction that is the arrangement direction of the cassettes C.
  • the transfer arm 11a is provided so as to be able to advance and retract and rotate in the X direction, and is configured to transfer the substrate G between the cassette C and the processing station 2.
  • the processing station 2 includes a plurality of processing units for performing a resist reflow process on the substrate G and an ultraviolet ray irradiation process as a pre-process. In each of these processing units, one substrate G is processed. In addition, the processing station 2 has a central transport path 20 for transporting the substrate G that basically extends in the X direction. Each processing unit is centrally transported on both sides of the central transport path 20. It is arranged to face the road 20.
  • the central transport path 20 is provided with a transport device 21 for loading / unloading the substrate G to / from each processing unit, and is movable in the X direction, which is the array direction of the processing units. It has a transport arm 21a. Furthermore, the transfer arm 21a is provided so as to be advanced and retracted in the Y direction, reciprocated in the vertical direction, and rotated, and is configured so that the substrate G can be transferred into and out of each processing unit. Yes.
  • a UV irradiation unit (UV) 30 and a reflow processing unit (REFLW) 60 are arranged in this order from the cassette station 1 side on one side along the central transfer path 20 of the processing station 2, and the central transfer On the other side along the path 20, three heating / cooling processing units (HP / COL) 80a, 80b, 80c are arranged in a row. Each heating / cooling processing unit (HP / COL) 80a, 80b, 80c is stacked in multiple layers in the vertical direction (not shown).
  • the UV irradiation unit (UV) 30 irradiates the resist formed on the substrate G with, for example, UV light having a predetermined wavelength, and the surface of the lower layer film that is not coated with the resist. Perform reforming. The purpose of this modification is to reduce the contact angle of pure water on the exposed underlayer film surface and increase the flow rate when the resist is softened in a solvent atmosphere such as thinner in the next reflow process. is there.
  • the UV irradiation unit (UV) 30 will be described with reference to FIG. 2 and FIG.
  • FIG. 2 is a schematic view of the UV irradiation unit (UV) 30, and FIG.
  • the UV irradiation unit (UV) 30 includes a housing 31, and a rectangular stage 32 and a light irradiation device 33 are accommodated in the housing 31.
  • the stage 32 has a placement surface on which the substrate G is placed, and is movable in the X direction substantially parallel to the central transport path 20.
  • the light irradiation device 33 is arranged in the middle of the movement path of the stage 32, and irradiates the substrate G placed on the stage 32 with UV light from the upper side of the stage 32.
  • the stage 32 is connected to a guide rail 34 that extends substantially parallel to the central conveyance path 20 via a connecting device 35, and can be reciprocated along the guide rail 34 by being driven by a stage driving unit 50.
  • the stage 32 is moved from the transfer arm 21a of the transfer device 21 to the substrate by a drive mechanism (not shown) such as an air cylinder mechanism or a ball screw mechanism driven by a drive signal from the stage drive unit 50, for example. It reciprocates between the home position for receiving G (the position indicated by the solid line in FIG. 3) and the folding position (the position indicated by the two-dot chain line in FIG. 3) that has passed almost completely through the light irradiation device 33.
  • the light irradiation device 33 includes UV lamps 35a, 35b, and 35c as light sources that emit UV light, and an irradiation surface 36 that transmits UV light from these light sources and irradiates the substrate G toward the substrate G. ing.
  • the UV lamps 35a, 35b, 35c are arranged side by side along the moving direction (X direction) of the stage 32.
  • each UV lamp 35a, 35b, 35c has a predetermined length in a direction substantially perpendicular to the moving direction of the stage 32 (Y direction) so that the entire width of the substrate G can be irradiated with UV light. It extends.
  • a light shielding plate 37 supported by a support member (not shown) is provided below the irradiation surface 36.
  • the light-shielding plate 37 is provided with an elongated slit [see FIG. 5A] whose long side direction coincides with the moving direction of the substrate G during UV light irradiation. With this line width, it is possible to irradiate ultraviolet rays locally.
  • Each of the UV lamps 35 a, 35 b, 35 c as a light source is connected to an irradiation drive unit 52 and is turned on / off by a drive signal from the irradiation drive unit 52.
  • a sensor unit 38 that detects the distance between the irradiation surface 36 and the surface of the substrate G is located above the movement path of the stage 32.
  • the light irradiation device 33 is provided on the home position side.
  • the sensor unit 38 should measure the distance between the irradiation surface 36 and the surface of the substrate G at a plurality of points on the substrate G aligned in the Y direction (width direction of the substrate G).
  • a sensor (for example, an optical sensor) 39 is provided.
  • the detection signal obtained by the sensor unit 38 is input to a controller 90 that controls the stage driving unit 50, the irradiation driving unit 52, and an elevating driving unit 51 described later.
  • the stage 32 is provided with an elevating mechanism 40 so that the distance between the irradiation surface 36 and the surface of the substrate G can be changed.
  • the elevating mechanism 40 includes, for example, three elevating shafts 41A, 41B, and 41C connected to the bottom surface of the stage 32, and motors 42A, 42B, and 42C that elevate and lower these elevating shafts 41A, 41B, and 41C.
  • Each of the motors 42A, 42B, 42C is connected to the lift drive unit 51 and is individually driven by a drive signal from the lift drive unit 51.
  • the corresponding lifting shafts 41A, 41B, 41C are individually lifted and lowered so that the height of the stage 32 (that is, the distance between the irradiation surface 36 and the surface of the substrate G) can be adjusted.
  • the substrate G is transferred to the stage 32 of the UV irradiation unit (UV) 30 from the transfer arm 21 a of the transfer device 21 that moves on the central transfer path 20.
  • the stage 32 stands by at the home position with the lifting pins 44 protruding from the surface of the stage 32 to a predetermined height.
  • the substrate G is transferred from the transfer arm 21a of the transfer device 21 to the lift pins 44.
  • the lift pins 44 When the substrate G is transferred to the lift pins 44, the lift pins 44 are lowered by the lift drive unit 51, so that the substrate G is placed on the placement surface of the stage 32.
  • the lift shaft 41A, 41B, 41C is then moved by the lift drive unit 51 so that the distance between the irradiation surface 36 of the light irradiation device 33 and the surface of the substrate G becomes a predetermined distance (irradiation distance). Raise.
  • the stage 32 is moved in the X direction from the home position toward the light irradiation device 33 by the stage driving unit 50, and UV irradiation is sequentially performed toward the surface of the substrate G.
  • the wavelength of UV light is preferably 300 to 400 nm.
  • the substrate G When UV irradiation is performed, the substrate G is moved before reaching the position facing the irradiation surface 36.
  • the distance between the moving substrate G and the irradiation surface 36 is detected by the sensor unit 38, and the height is sequentially corrected by moving the lifting shafts 41A, 41B, 41C during the movement of the stage 32 based on the detected value. . Therefore, the distance between the irradiation surface 36 and the surface of the substrate G is made uniform (distance U) over the entire surface of the substrate G.
  • a light shielding plate 37 in which slits (not shown) are formed is interposed between the substrate G (stage 32) and the irradiation surface 36 of the light irradiation device 33, ultraviolet rays are emitted from the substrate. Irradiated locally in the shape of an elongated line in the direction of G movement (X direction).
  • the stage 32 Move in the opposite direction toward the home position. Also on this return path, UV light can be irradiated from the light irradiation device 33 toward the substrate G as necessary.
  • the surface of the lower layer film at the site irradiated with UV light is modified, and the flow of the resist is promoted.
  • the degree of modification by light irradiation varies depending on the material of the lower layer film. For example, when the lower layer film is silicon, the contact angle of the silicon surface by light irradiation is 10 degrees or less, for example, 1 to 10 degrees. It is preferable to modify. This promotes resist flow in the reflow process.
  • the substrate G after the UV irradiation process is transferred from the stage 32 of the UV irradiation unit (UV) 30 to the transfer arm 21a of the transfer device 21 when returning to the home position.
  • a reflow process is performed in which the resist arm is carried into the reflow processing unit (REFLW) 60 of the processing station 2 by the transfer arm 21a, and the resist formed on the substrate G is softened in an organic solvent such as a thinner atmosphere to change the resist mask shape. It is.
  • FIG. 4 is a schematic cross-sectional view of the reflow processing unit (REFLW) 60.
  • the reflow processing unit (HREFLW) 60 has a chamber 61, and this chamber 61 is composed of a lower chamber 61a and an upper chamber 61b abutting on the upper portion of the lower chamber 61a.
  • the upper chamber 61b and the lower chamber 61a are configured to be opened and closed by an opening / closing mechanism (not shown), and the substrate G is loaded and unloaded by the transfer device 21 when the chamber is open.
  • a support table 62 for horizontally supporting the substrate G is provided in the chamber 61.
  • the support table 62 is made of a material having excellent thermal conductivity such as aluminum!
  • the support table 62 is driven by a lift mechanism (not shown) to lift and lower the substrate G.
  • Three lift pins 63 (only two are shown in FIG. 4) 1S Provided to penetrate the support table 62 It has been.
  • the lift pins 63 lift the substrate G from the support table 62 and support the substrate G at a predetermined height position.
  • the tip of the support table 62 is held at the same height as the upper surface.
  • Exhaust ports 64a and 64b are formed at the bottom of the lower chamber 61a, and an exhaust system 64 is connected to the exhaust ports 64a and 64b. Then, the atmospheric gas in the chamber 61 is exhausted through the exhaust system 64.
  • a temperature adjusting medium flow path 65 is provided inside the support table 62.
  • a temperature adjusting medium such as temperature-controlled cooling water is provided as a temperature adjusting medium introduction pipe 65a. And is discharged from the temperature control medium discharge pipe 65b and circulated, and its heat (for example, cold heat) is transferred to the substrate G through the support table 62, whereby the processing surface of the substrate G is changed. The desired temperature is controlled.
  • the top wall portion of the chamber 61 is provided so as to face the shower head 66 force support table 62.
  • a large number of gas discharge holes 66b are provided on the lower surface 66a of the shower head 66.
  • a gas introduction part 67 is provided at the upper center of the shower head 66, and the gas introduction part 67 communicates with a space 68 formed in the shower head 66.
  • a pipe 69 is connected to the gas inlet 67.
  • the pipe 69 is connected to a bubbler tank 70 that vaporizes and supplies an organic solvent such as thinner, and an open / close valve 71 is provided in the middle thereof.
  • An N gas supply pipe 74 connected to an N gas supply source (not shown) is provided at the bottom of the bubbler tank 70 as a bubble generating means for vaporizing the thinner.
  • the N gas supply pipe 74 has a mass flow controller 72 and an opening / closing valve 73.
  • the bubbler tank 70 controls the temperature of the thinner stored inside.
  • a temperature adjusting mechanism (not shown) for adjusting to a constant temperature is provided.
  • N gas is supplied from an N gas supply source (not shown) while the flow rate is controlled by the mass flow controller 72.
  • the thinner in the bubbler tank 70 By introducing it into the bottom of the blur tank 70, the thinner in the bubbler tank 70, the temperature of which has been adjusted to a predetermined temperature, can be vaporized and introduced into the chamber 61 via the pipe 69 and the gas inlet 67! /
  • each purge gas introduction portion 75 is filled with, for example, N gas as purge gas.
  • a purge gas supply pipe 76 for supplying the gas to the inside 61 is connected.
  • the purge gas supply pipe 76 is connected to a purge gas supply source (not shown), and an opening / closing valve 77 is provided in the middle thereof.
  • the reflow processing unit (REFLW) 60 having such a configuration, first, the upper channel 61b is opened from the lower chamber 61a, and in this state, the pattern is already formed by the transfer arm 21a of the transfer device 21 in the ultraviolet ray.
  • the substrate G having the resist subjected to the irradiation treatment is carried in and placed on the support table 62. Then, the upper chamber 61b and the lower chamber 61a are brought into contact with each other, and the chamber 61 is closed.
  • the flow rate of N gas is controlled by the mass flow controller 72 to control the vaporization amount of thinner.
  • the vaporized thinner is introduced into the space 68 of the shower head 66 from the bubbler tank 70 via the pipe 69 and the gas introduction part 67 and discharged from the gas discharge hole 66b.
  • the inside of the chamber 61 has a thinner atmosphere with a predetermined concentration.
  • a patterned resist is already provided on the substrate G placed on the support table 62 in the chamber 61, the resist is exposed to a thinner atmosphere, so that the thinner is removed. Penetrates the resist. As a result, the resist is softened and its fluidity is increased, and the resist is deformed and a predetermined region (target region) on the surface of the substrate G is covered with the deformed resist.
  • the temperature adjustment medium into the temperature adjustment medium flow path 65 provided inside the support table 62, the heat is transferred to the substrate G via the support table 62, thereby The processing surface of the substrate G is controlled to a desired temperature, for example, 20 ° C. Gas containing thinner discharged from the head 66 toward the surface of the substrate G After contacting the surface, the air flows toward the exhaust ports 64a and 64b, and is exhausted from the chamber 61 to the exhaust system 64.
  • the opening / closing valve 77 on the purge gas supply pipe 76 is opened while continuing the exhaust, and the purge gas introduction unit 75 is connected. N gas as a purge gas is introduced into the chamber 61,
  • the upper chamber 61b is opened from the lower chamber 61a, and the substrate G after the reflow process is carried out from the reflow process unit (REFLW) 60 by the transfer arm 21a in the reverse procedure.
  • REFLW reflow process unit
  • Three heating and cooling processing units (HP / COU 80a, 80b, and 80c have a hot plate unit (HP) that heats the substrate G and a cooling plate that cools the substrate G, respectively.
  • Unit (COL) force Multi-stage for example, two stages are stacked in a total of four stages (not shown) .
  • This heating / cooling processing unit (HP / COU 80a, 80b, 80c) is used after UV irradiation and reflow treatment. The subsequent substrate G is heated or cooled as necessary.
  • each component of the reflow processing system 100 is configured to be connected to and controlled by a controller 90 having a CPU of the control unit 3.
  • a user interface 91 consisting of a keyboard on which an operator inputs commands to manage the reflow processing system 100, a display that visualizes and displays the operating status of the reflow processing system 100, and the like. Has been.
  • the controller 90 stores a storage unit storing a recipe in which a control program and processing condition data for realizing various processes executed by the reflow processing system 100 are controlled by the controller 90. 92 is connected.
  • the reflow processing system 100 is controlled under the control of the controller 90 by calling an arbitrary recipe from the storage unit 92 according to an instruction from the user interface 91 and causing the controller 90 to execute it.
  • the desired processing at is performed.
  • the recipe may be stored in a computer-readable storage medium such as a CD-ROM, a hard disk, a flexible disk, or a flash memory, or may be dedicated from another device, for example. It is also possible to use it by transmitting it over the line at any time Noh.
  • the transfer arm 11a of the transfer device 11 accommodates the substrate G on which the resist pattern is already formed. Access C and take out one board G.
  • the substrate G is transferred from the transfer arm 11a of the transfer device 11 to the transfer arm 21a of the transfer device 21 in the central transfer path 20 of the processing station 2.
  • the UV irradiation unit HUV) 30 is transferred. It is brought in.
  • the substrate G is taken out from the UV irradiation unit (UV) 30 by the transport device 21, and is heated and cooled (HP) / COU 80a, 80b, 80c, and each heating / cooling processing unit (HP / COU 80a, 80b, 80c, substrate G that has undergone cooling processing is reflow processing unit (REFLW) 60) And then the reflow process is performed.
  • HP heated and cooled
  • REFLW reflow processing unit
  • each heating / cooling processing unit HP / COU 80a, 80b, 80c as necessary.
  • Substrate G after such a series of processes has been completed. Is taken out from the reflow processing unit (REFLW) 60 by the transfer device 21, delivered to the transfer device 11 of the cassette station 1, and stored in an arbitrary cassette C.
  • FIG. 5A shows the principle when UV irradiation is performed with a predetermined line width on the substrate G in which a resist pattern is formed on the wiring for TFT formation in the UV irradiation unit (UV) 30 using the light shielding plate 37. It is drawing to explain.
  • FIG. 5B is an enlarged plan view showing a portion indicated by reference symbol A on the surface of the substrate G shown in FIG. 5A.
  • the substrate G placed on the stage 32 is transported in the X direction through the UV irradiation unit (UV) 30.
  • UV lamps 35a, 35b, 35c of the UV irradiation unit (UV) 30 It receives ultraviolet irradiation.
  • a light-shielding plate 37 in which a number of elongated slits 37a having long sides in the X direction are formed is interposed, so that ultraviolet rays have a predetermined value according to the opening width of the slits 37a. Irradiated with line width. Specifically, for example, as shown in FIG. 5B, the region including the TFT element formation portion 101 on the substrate G is irradiated with UV light (UV irradiation region), and the gate line formed in the X direction in FIG. UV light is not irradiated to the area including the wiring 102 (non-irradiation area) .
  • the surface of the lower layer film is modified by the action of ultraviolet rays, and the resist is more likely to flow during the reflow process in the next step.
  • the resist flow rate during reflow is slower than in the UV irradiated area. Therefore, in the UV irradiation region including the TFT element forming portion 101, the resist spreading area due to reflow is larger than that in the non-irradiation region including the wiring 102. In this way, by performing UV irradiation locally, it becomes possible to change the flow velocity and flow area of the resist in the reflow process depending on the region within the same substrate surface.
  • FIG. 6 is a flowchart showing an example of a manufacturing method of a TFT element for a liquid crystal display device to which the reflow method of the present invention is applied, and FIGS. 7A to 7K are cross-sectional views for explaining the manufacturing method.
  • a gate electrode 202 and a gate line are formed on an insulating substrate 201 made of a transparent substrate such as glass, and a gate insulating film 203 such as a silicon nitride film, a-Si (amorphous) (Silicon) film 204, ⁇ + Si film 205 as ohmic contact layer, and metal film 206 for electrodes such as A1 alloy and Mo alloy are stacked in this order (step)
  • a resist 207 is formed on the electrode metal film 206 (step
  • step S3 exposure processing is performed on the resist 207 using the exposure mask 300 (step S3).
  • the exposure mask 300 is configured so that the resist 207 can be exposed in a predetermined pattern. By exposing the resist 207 in this manner, an exposed resist portion 208 and an unexposed resist portion 209 are formed as shown in FIG. 7D.
  • step S 4 development processing is performed to remove the exposed resist portion 208 and leave the unexposed resist portion 209 on the electrode metal film 206 as shown in FIG. 7E (step S 4 ).
  • the unexposed resist portion 209 is separated and patterned into a source electrode resist mask 210 and a drain electrode resist mask 211.
  • step S5 the electrode metal film 206 is etched, and as shown in FIG. 0 is formed (step S5).
  • the force S of the source electrode 206a and the drain electrode 206b is formed, and the surface of the ⁇ + Si film 205 can be exposed in the recess 220 between them.
  • the source electrode resist mask 210 and the drain electrode resist mask 211 are subjected to UV irradiation processing (step S6).
  • the exposed surface of the ⁇ + Si film 205 that is not covered with the source electrode resist mask 210 and the drain electrode resist mask 211 is modified by the UV irradiation treatment so that the contact angle of pure water is 10 Less than, for example, 1 to 10 degrees, the modified surface 205a becomes 10 degrees, so that the flow of the softened resist is promoted.
  • reflow processing is performed by the reflow processing unit (REFLW) 60 of FIG. 4 (step 7).
  • a resist softened with an organic solvent such as thinner is poured into a target recess 220 to be a channel region later.
  • FIG. 7H shows a state in which the periphery of the recess 220 is covered with the deformed resist 212 after the reflow process.
  • pure water is not applied to the modified surface 205a of the ⁇ + Si film 205 that is not covered with the resist mask 210 for the source electrode and the resist mask 211 for the drain electrode. Since the contact angle is modified to 10 degrees or less, the resist flow proceeds rapidly, and the reflow process can be completed in a short time.
  • UV irradiation unit (UV) 30 shown in FIGS. 2 and 3 by performing UV irradiation in the state where the light shielding plate 37 having the slit 37a is interposed, the resist is quickly flowed and reflowed. UV light is selectively irradiated around the area where the recess 220 is to be promoted, for example, the recess 220, and conversely, resist reflow is suppressed as much as possible! /, And the area such as the gate line is not irradiated with UV light. be able to. In this way, by locally irradiating ultraviolet rays, the flow rate of the resist on the substrate G can be adjusted in the substrate plane, and the spread of the deformed resist 212 can be controlled.
  • UV light is selectively irradiated around the area where the recess 220 is to be promoted, for example, the recess 220, and conversely, resist reflow is suppressed as much as possible! /, And the area such as the gate line is
  • the etching mask 212 Using the etching mask 212, the surrounding ⁇ + Si film 205 and a-Si film 204 are etched (step S8). Thereafter, the deformed resist 212 is removed by a technique such as a wet process using a resist stripping solution (step S9), and as shown in FIG. The source electrode 206a and the drain electrode 206b are exposed.
  • step S10 the n + Si film 205 exposed in the recess 220 is etched.
  • a channel region 221 is formed as shown in FIG. 7K.
  • the subsequent steps are not shown, for example, after forming an organic film so as to cover the channel region 221, the source electrode 206a, and the drain electrode 206b (step S11), the source electrode 206a ( A contact hole connected to the drain electrode 206b) is formed by etching (step S12), and then a transparent electrode is formed by using indium tin oxide (ITO) or the like (step S13). TFT elements are manufactured.
  • ITO indium tin oxide
  • the exposed surface of the ultraviolet ray irradiation region is modified so that the resist is easily reflowed, and the reflow time is reduced. It can be shortened.
  • the resist can be fluidized faster in the ultraviolet irradiation region than in the non-ultraviolet irradiation region, so that the reflow rate and the expansion area of the deformation resist change in the plane of the substrate G.
  • the etching accuracy using the deformed resist as a mask can be improved.
  • the manufacture of TFT elements using a glass substrate for LCD was taken as an example, but reflow processing of resist formed on a substrate such as another flat panel display (FPD) substrate or a semiconductor substrate is performed.
  • FPD flat panel display
  • the present invention can also be applied when performing
  • the resist is irradiated with ultraviolet rays using the UV irradiation unit (UV) 30, but the light irradiated to the resist is not limited to ultraviolet rays. Wavelength light can be used.
  • the light shielding plate 37 in which the slits 37a are formed is used.
  • the light shielding plate in addition to the slit, for example, a structure having a small hole is used. It is also possible to irradiate light in a spot shape.
  • the reflow method of the present invention can also be applied to a TFT manufacturing process in which half exposure technology and re-development processing are performed.
  • the present invention can be suitably used in the manufacture of semiconductor devices such as TFT elements.

Abstract

Cette invention propose un objet devant être traité qui a un film de couche de fondation et un film de réserve formé avec motif au-dessus du film de couche de fondation de façon à avoir une région exposée où le film de couche de fondation est exposé et une région couverte où le film de couche de fondation est couvert. Ensuite, l'objet devant être traité est localement irradié par de la lumière, puis le film de réserve est ramolli et coulé pour couvrir partiellement ou entièrement la région exposée. Après ceci, une attaque est effectuée à l'aide de la réserve coulée sous forme de masque, formant ainsi un certain motif.
PCT/JP2007/071402 2006-11-06 2007-11-02 Procédé de refusion, procédé de formation de motif et procédé de fabrication d'un transistor à couches minces ( tft ) WO2008056610A1 (fr)

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JP2006-300494 2006-11-06
JP2006300494A JP2008117965A (ja) 2006-11-06 2006-11-06 リフロー方法、パターン形成方法およびｔｆｔの製造方法

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JP6072644B2 (ja) * 2013-08-05 2017-02-01 東京エレクトロン株式会社 紫外線照射装置、基板処理方法、プログラム及びコンピュータ記憶媒体

Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH06291028A (ja) * 1993-04-01 1994-10-18 Fujitsu Ltd レジスト硬化方法
JP2000077307A (ja) * 1998-08-31 2000-03-14 Toshiba Corp 成膜方法
JP2001332484A (ja) * 2000-05-24 2001-11-30 Toshiba Corp パターン処理方法
JP2006154127A (ja) * 2004-11-26 2006-06-15 Nec Lcd Technologies Ltd 表示装置の製造方法及びパターン形成方法

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Publication number Priority date Publication date Assignee Title
JP4413035B2 (ja) * 1997-08-08 2010-02-10 大日本印刷株式会社 パターン形成体およびパターン形成方法
JP3616584B2 (ja) * 2000-06-12 2005-02-02 鹿児島日本電気株式会社 パターン形成方法及びそれを用いた表示装置の製造方法
JP3976598B2 (ja) * 2002-03-27 2007-09-19 Ｎｅｃ液晶テクノロジー株式会社 レジスト・パターン形成方法
JP4524744B2 (ja) * 2004-04-14 2010-08-18 日本電気株式会社 有機マスクの形成方法及び該有機マスクを利用したパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06291028A (ja) * 1993-04-01 1994-10-18 Fujitsu Ltd レジスト硬化方法
JP2000077307A (ja) * 1998-08-31 2000-03-14 Toshiba Corp 成膜方法
JP2001332484A (ja) * 2000-05-24 2001-11-30 Toshiba Corp パターン処理方法
JP2006154127A (ja) * 2004-11-26 2006-06-15 Nec Lcd Technologies Ltd 表示装置の製造方法及びパターン形成方法

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