CN100552960C - Eeprom及其驱动方法 - Google Patents
Eeprom及其驱动方法 Download PDFInfo
- Publication number
- CN100552960C CN100552960C CNB2006101540695A CN200610154069A CN100552960C CN 100552960 C CN100552960 C CN 100552960C CN B2006101540695 A CNB2006101540695 A CN B2006101540695A CN 200610154069 A CN200610154069 A CN 200610154069A CN 100552960 C CN100552960 C CN 100552960C
- Authority
- CN
- China
- Prior art keywords
- mos transistor
- channel mos
- eeprom
- voltage
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005275356A JP4889268B2 (ja) | 2005-09-22 | 2005-09-22 | Eepromとeepromの駆動方法 |
JP2005275356 | 2005-09-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1937229A CN1937229A (zh) | 2007-03-28 |
CN100552960C true CN100552960C (zh) | 2009-10-21 |
Family
ID=37883873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101540695A Expired - Fee Related CN100552960C (zh) | 2005-09-22 | 2006-09-22 | Eeprom及其驱动方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7489550B2 (zh) |
JP (1) | JP4889268B2 (zh) |
CN (1) | CN100552960C (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7483310B1 (en) * | 2006-11-02 | 2009-01-27 | National Semiconductor Corporation | System and method for providing high endurance low cost CMOS compatible EEPROM devices |
US7804714B1 (en) | 2007-02-21 | 2010-09-28 | National Semiconductor Corporation | System and method for providing an EPROM with different gate oxide thicknesses |
US8067795B2 (en) * | 2007-03-12 | 2011-11-29 | Texas Instruments Incorporated | Single poly EEPROM without separate control gate nor erase regions |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
US7989875B2 (en) * | 2008-11-24 | 2011-08-02 | Nxp B.V. | BiCMOS integration of multiple-times-programmable non-volatile memories |
US8299519B2 (en) * | 2010-01-11 | 2012-10-30 | International Business Machines Corporation | Read transistor for single poly non-volatile memory using body contacted SOI device |
JP5932257B2 (ja) * | 2011-07-14 | 2016-06-08 | エスアイアイ・セミコンダクタ株式会社 | メモリ回路 |
US9393573B2 (en) | 2014-04-24 | 2016-07-19 | Separation Technologies Llc | Continuous belt for belt-type separator devices |
US9764332B2 (en) | 2015-02-13 | 2017-09-19 | Separation Technologies Llc | Edge air nozzles for belt-type separator devices |
MX2022015626A (es) | 2020-06-22 | 2023-01-11 | Separation Tech Llc | Proceso para beneficio de secado de mineral de hierro fino y muy fino por tama?o y segregacion electrostatica. |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5339279A (en) * | 1993-05-07 | 1994-08-16 | Motorola, Inc. | Block erasable flash EEPROM apparatus and method thereof |
US5465231A (en) * | 1993-05-07 | 1995-11-07 | Ohsaki; Katsuhiko | EEPROM and logic LSI chip including such EEPROM |
US5898614A (en) * | 1994-11-30 | 1999-04-27 | Nkk Corporation | Non-volatile semiconductor memory device |
US6044018A (en) * | 1998-06-17 | 2000-03-28 | Mosel Vitelic, Inc. | Single-poly flash memory cell for embedded application and related methods |
US6181603B1 (en) * | 1996-05-01 | 2001-01-30 | Hitachi, Ltd. | Nonvolatile semiconductor memory device having plural memory cells which store multi-value information |
US6614684B1 (en) * | 1999-02-01 | 2003-09-02 | Hitachi, Ltd. | Semiconductor integrated circuit and nonvolatile memory element |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69018832T2 (de) * | 1990-12-31 | 1995-11-23 | Sgs Thomson Microelectronics | EEPROM-Zelle mit einschichtigem Metallgate und mit einem Lese-Interface des externen Schaltkreises, welches isoliert ist vom Schreib/Lösch-Interface des Programmierungsschaltkreises. |
US7071060B1 (en) * | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
US6100746A (en) * | 1998-05-18 | 2000-08-08 | Vanguard International Semiconductor Corporation | Electrically programmable fuse |
US6901006B1 (en) * | 1999-07-14 | 2005-05-31 | Hitachi, Ltd. | Semiconductor integrated circuit device including first, second and third gates |
WO2001093275A1 (en) * | 2000-05-30 | 2001-12-06 | Hitachi,Ltd | Semiconductor device and mobile communication terminal |
US6731541B2 (en) * | 2001-05-09 | 2004-05-04 | Gennum Corporation | Low voltage single poly deep sub-micron flash EEPROM |
TW495977B (en) * | 2001-09-28 | 2002-07-21 | Macronix Int Co Ltd | Erasing method for p-channel silicon nitride read only memory |
JP4016679B2 (ja) * | 2002-03-11 | 2007-12-05 | 株式会社デンソー | 半導体装置及び半導体装置の製造方法 |
EP1522078B1 (en) * | 2002-07-08 | 2007-08-29 | Nxp B.V. | Erasable and programmable non-volatile cell |
JP2005353984A (ja) * | 2004-06-14 | 2005-12-22 | Seiko Epson Corp | 不揮発性記憶装置 |
-
2005
- 2005-09-22 JP JP2005275356A patent/JP4889268B2/ja not_active Expired - Fee Related
-
2006
- 2006-09-21 US US11/524,300 patent/US7489550B2/en not_active Expired - Fee Related
- 2006-09-22 CN CNB2006101540695A patent/CN100552960C/zh not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5339279A (en) * | 1993-05-07 | 1994-08-16 | Motorola, Inc. | Block erasable flash EEPROM apparatus and method thereof |
US5465231A (en) * | 1993-05-07 | 1995-11-07 | Ohsaki; Katsuhiko | EEPROM and logic LSI chip including such EEPROM |
JP2596695B2 (ja) * | 1993-05-07 | 1997-04-02 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Eeprom |
US5898614A (en) * | 1994-11-30 | 1999-04-27 | Nkk Corporation | Non-volatile semiconductor memory device |
US6181603B1 (en) * | 1996-05-01 | 2001-01-30 | Hitachi, Ltd. | Nonvolatile semiconductor memory device having plural memory cells which store multi-value information |
US6044018A (en) * | 1998-06-17 | 2000-03-28 | Mosel Vitelic, Inc. | Single-poly flash memory cell for embedded application and related methods |
US6614684B1 (en) * | 1999-02-01 | 2003-09-02 | Hitachi, Ltd. | Semiconductor integrated circuit and nonvolatile memory element |
Also Published As
Publication number | Publication date |
---|---|
JP4889268B2 (ja) | 2012-03-07 |
US7489550B2 (en) | 2009-02-10 |
JP2007088216A (ja) | 2007-04-05 |
US20070064488A1 (en) | 2007-03-22 |
CN1937229A (zh) | 2007-03-28 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER OWNER: NEC CORP. Effective date: 20101115 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20101115 Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091021 Termination date: 20160922 |