CN100539008C - 半导体封装及其形成方法 - Google Patents

半导体封装及其形成方法 Download PDF

Info

Publication number
CN100539008C
CN100539008C CNB2006800182164A CN200680018216A CN100539008C CN 100539008 C CN100539008 C CN 100539008C CN B2006800182164 A CNB2006800182164 A CN B2006800182164A CN 200680018216 A CN200680018216 A CN 200680018216A CN 100539008 C CN100539008 C CN 100539008C
Authority
CN
China
Prior art keywords
layer
gold
semiconductor package
adhesion
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006800182164A
Other languages
English (en)
Chinese (zh)
Other versions
CN101185153A (zh
Inventor
瓦西里·罗梅加·汤普森
贾森·芬德
特里·K·戴利
张镇旭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN101185153A publication Critical patent/CN101185153A/zh
Application granted granted Critical
Publication of CN100539008C publication Critical patent/CN100539008C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Die Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)
CNB2006800182164A 2005-05-26 2006-03-24 半导体封装及其形成方法 Expired - Fee Related CN100539008C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/140,351 2005-05-26
US11/140,351 US7339267B2 (en) 2005-05-26 2005-05-26 Semiconductor package and method for forming the same

Publications (2)

Publication Number Publication Date
CN101185153A CN101185153A (zh) 2008-05-21
CN100539008C true CN100539008C (zh) 2009-09-09

Family

ID=37452517

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006800182164A Expired - Fee Related CN100539008C (zh) 2005-05-26 2006-03-24 半导体封装及其形成方法

Country Status (5)

Country Link
US (1) US7339267B2 (https=)
JP (1) JP5300470B2 (https=)
CN (1) CN100539008C (https=)
TW (1) TWI433279B (https=)
WO (1) WO2006127107A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110767604A (zh) * 2019-10-31 2020-02-07 厦门市三安集成电路有限公司 化合物半导体器件和化合物半导体器件的背面铜制程方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7949601B2 (en) * 2007-04-21 2011-05-24 Hartford Fire Insurance Company Method and system for providing minimum contract values in an annuity with lifetime benefit payments
DE102009044086A1 (de) * 2009-09-23 2011-03-24 United Monolithic Semiconductors Gmbh Verfahren zur Herstellung eines elektronischen Bauteils und nach diesem Verfahren hergestelltes elektronisches Bauteil
US8680674B2 (en) 2012-05-31 2014-03-25 Freescale Semiconductor, Inc. Methods and structures for reducing heat exposure of thermally sensitive semiconductor devices
US9093429B2 (en) 2012-06-27 2015-07-28 Freescale Semiconductor, Inc. Methods and structures for reducing heat exposure of thermally sensitive semiconductor devices
US9589860B2 (en) * 2014-10-07 2017-03-07 Nxp Usa, Inc. Electronic devices with semiconductor die coupled to a thermally conductive substrate
US9875987B2 (en) 2014-10-07 2018-01-23 Nxp Usa, Inc. Electronic devices with semiconductor die attached with sintered metallic layers, and methods of formation of such devices
US9698116B2 (en) 2014-10-31 2017-07-04 Nxp Usa, Inc. Thick-silver layer interface for a semiconductor die and corresponding thermal layer
CN107579032B (zh) * 2017-07-27 2019-04-09 厦门市三安集成电路有限公司 一种化合物半导体器件的背面制程方法
JP7168280B2 (ja) * 2018-06-26 2022-11-09 住友電工デバイス・イノベーション株式会社 半導体装置、および、半導体チップの搭載方法
US20230253359A1 (en) * 2022-02-04 2023-08-10 Wolfspeed, Inc. Semiconductor die including a metal stack

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3881884A (en) * 1973-10-12 1975-05-06 Ibm Method for the formation of corrosion resistant electronic interconnections
US5027189A (en) * 1990-01-10 1991-06-25 Hughes Aircraft Company Integrated circuit solder die-attach design and method
US5378926A (en) * 1991-09-30 1995-01-03 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal nitride barrier layer to block migration of tin through via holes
CN1174408A (zh) * 1996-08-05 1998-02-25 摩托罗拉公司 形成半导体金属化系统及其结构的方法
US5998238A (en) * 1994-10-26 1999-12-07 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor device
US6040239A (en) * 1997-08-22 2000-03-21 Micron Technology, Inc. Non-oxidizing touch contact interconnect for semiconductor test systems and method of fabrication
US20010028113A1 (en) * 1997-04-24 2001-10-11 Katsuya Kosaki Method of manufacturing semiconductor device
US20030134452A1 (en) * 2001-12-06 2003-07-17 Stmicroelectronics S.R.L. Method for manufacturing semiconductor device packages
US20040023463A1 (en) * 1999-08-19 2004-02-05 Sharp Kabushiki Kaisha Heterojunction bipolar transistor and method for fabricating the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01123418A (ja) * 1987-11-09 1989-05-16 Nec Corp 半導体装置の製造方法
US6312830B1 (en) * 1999-09-02 2001-11-06 Intel Corporation Method and an apparatus for forming an under bump metallization structure
US6960824B1 (en) * 2000-11-15 2005-11-01 Skyworks Solutions, Inc. Structure and method for fabrication of a leadless chip carrier
JP2003045875A (ja) * 2001-07-30 2003-02-14 Nec Kagobutsu Device Kk 半導体装置およびその製造方法
US6607941B2 (en) * 2002-01-11 2003-08-19 National Semiconductor Corporation Process and structure improvements to shellcase style packaging technology
KR100611778B1 (ko) * 2002-09-24 2006-08-10 주식회사 하이닉스반도체 반도체장치 제조방법

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3881884A (en) * 1973-10-12 1975-05-06 Ibm Method for the formation of corrosion resistant electronic interconnections
US5027189A (en) * 1990-01-10 1991-06-25 Hughes Aircraft Company Integrated circuit solder die-attach design and method
US5378926A (en) * 1991-09-30 1995-01-03 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal nitride barrier layer to block migration of tin through via holes
US5998238A (en) * 1994-10-26 1999-12-07 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor device
CN1174408A (zh) * 1996-08-05 1998-02-25 摩托罗拉公司 形成半导体金属化系统及其结构的方法
US20010028113A1 (en) * 1997-04-24 2001-10-11 Katsuya Kosaki Method of manufacturing semiconductor device
US6040239A (en) * 1997-08-22 2000-03-21 Micron Technology, Inc. Non-oxidizing touch contact interconnect for semiconductor test systems and method of fabrication
US20040023463A1 (en) * 1999-08-19 2004-02-05 Sharp Kabushiki Kaisha Heterojunction bipolar transistor and method for fabricating the same
US20030134452A1 (en) * 2001-12-06 2003-07-17 Stmicroelectronics S.R.L. Method for manufacturing semiconductor device packages

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110767604A (zh) * 2019-10-31 2020-02-07 厦门市三安集成电路有限公司 化合物半导体器件和化合物半导体器件的背面铜制程方法
CN110767604B (zh) * 2019-10-31 2022-03-18 厦门市三安集成电路有限公司 化合物半导体器件和化合物半导体器件的背面铜制程方法

Also Published As

Publication number Publication date
TW200644192A (en) 2006-12-16
CN101185153A (zh) 2008-05-21
JP5300470B2 (ja) 2013-09-25
US7339267B2 (en) 2008-03-04
WO2006127107A3 (en) 2007-06-14
TWI433279B (zh) 2014-04-01
US20060270194A1 (en) 2006-11-30
JP2008543049A (ja) 2008-11-27
WO2006127107A2 (en) 2006-11-30

Similar Documents

Publication Publication Date Title
CN100334711C (zh) 用于与散热器有效热接触的、微电子管芯侧面上的背面金属化
US8048781B2 (en) Methods and systems for packaging integrated circuits
KR100462981B1 (ko) 반도체장치용 칩 스케일 표면 장착 패키지 및 그 제조공정
CN103839910B (zh) 包括芯片载体的半导体器件组件、半导体晶片和制造半导体器件的方法
KR101366949B1 (ko) 마이크로 전자 다이, 마이크로 전자 기기 패키지 및 그 형성 방법
CN101221915B (zh) 功率mosfet的晶片级芯片规模封装
JP3796016B2 (ja) 半導体装置
US8802554B2 (en) Patterns of passivation material on bond pads and methods of manufacture thereof
CN104835746B (zh) 具有被结合到金属箔的半导体管芯的半导体模块
JPH04326534A (ja) 半導体装置のチップボンディング方法
CN100539008C (zh) 半导体封装及其形成方法
US6933171B2 (en) Large bumps for optical flip chips
CN105140139B (zh) 厚金属焊盘的处理
US20250157857A1 (en) Component and method of manufacturing a component using an ultrathin carrier
CN206639796U (zh) 半导体器件
US9269676B2 (en) Through silicon via guard ring
JP6427838B2 (ja) 半導体装置
US10998231B2 (en) Method for increasing semiconductor device wafer strength
CN1801486B (zh) 用于电子封装的直通晶片连接的大表面积铝焊接垫
JP2006261415A (ja) 半導体装置の製造方法
JP5278287B2 (ja) 半導体装置の製造方法
JPS59139635A (ja) ボンデイング方法
JP2004186644A (ja) 電子部品の個別分割方法
HK1117646B (en) Power mosfet wafer level chip-scale package
JPH104107A (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: Texas in the United States

Patentee after: NXP America Co Ltd

Address before: Texas in the United States

Patentee before: Fisical Semiconductor Inc.

CP01 Change in the name or title of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090909

Termination date: 20190324

CF01 Termination of patent right due to non-payment of annual fee