CN1174408A - 形成半导体金属化系统及其结构的方法 - Google Patents

形成半导体金属化系统及其结构的方法 Download PDF

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Publication number
CN1174408A
CN1174408A CN97116613A CN97116613A CN1174408A CN 1174408 A CN1174408 A CN 1174408A CN 97116613 A CN97116613 A CN 97116613A CN 97116613 A CN97116613 A CN 97116613A CN 1174408 A CN1174408 A CN 1174408A
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Prior art keywords
nickel
layer
metal system
metal
vanadium
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CN97116613A
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韦恩·A·克罗宁
布赖恩·L·斯克里夫纳
柯比·F·克茨
小约翰·M·帕尔西
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NXP USA Inc
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Motorola Inc
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Publication of CN1174408A publication Critical patent/CN1174408A/zh
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Abstract

一种用于半导体器件(23)的高温金属化系统。半导体器件(23)具有多层金属化系统(36)。金属化系统(36)的附着层(37)形成于半导体衬底(20)上。含镍合金的阻挡层(38)形成于附着层(37)上。保护层(39)形成于阻挡层(38)上。阻挡层(38)可以防止高温处理过程中焊料成分向半导体衬底(20)扩散。

Description

形成半导体金属化系统及其结构的方法
本发明一般涉及集成电路，特别涉及集成电路金属化系统。
在制造半导体器件时，金属化系统一般形成于半导体管芯上，用以加强半导体管芯与如引线框等陶瓷或金属结构的键合。通常，金属化系统由多层金属构成，如铬、镍、和金层(CrNiAu)，钛、铂和金层(TiPtAu)，或钛、镍、金层(TiNiAu)层。第一层一般为铬或钛，因为它们与半导体衬底的键合能力较强。另外，第一金属层还用于耦连例如Ni或Pt等第二金属层与半导体管芯。金保护层形成于第二金属层上。
金属化系统的主要用途是将半导体管芯键合到引线框上。实现键合步骤的一种技术是再流焊工艺。因为键合步骤用再流焊工艺实现，所以键合的半导体-引线框结构此后必须保持低于键合温度的温度。否则，半导体管芯会从引线框上脱离。所以，随后的处理步骤必须在低于最始键合温度的温度下进行。如果随后的处理步骤需要高于再流焊工艺的温度，那么管芯贴装键合的完整性将会受损。现有技术金属化系统的一个缺点是管芯贴装键合的温度极限很接近或高于随后的再流焊工艺温度。
因此，有益的是有这样一种半导体金属化系统，该系统具有在形成金属化系统后允许高温处理的温度极限。另外，有益的是具有能避免金属在键合温度溶解的金属化系统。
图1是处理中的本发明半导体器件的剖面图；
图2是具有形成于其上的金属化系统的图1所示半导体器件的剖面图；
图3是加热使金属合金中的各金属再分布后图2所示的金属化系统中各金属的分布图。
图1是处理中的本发明半导体器件23的剖面图。更具体地，图1示出了有上表面21和下表面22的半导体衬底20。半导体衬底20合适的材料有砷化镓、硅、硅锗、磷化铟等等。半导体衬底20上含有由其制造的半导体器件23。例如，半导体器件23为金属氧化物半导体场效应晶体管(MOSFET)，该晶体管具有形成于上表面21上的栅结构24。栅结构24包括借助栅氧化层26与上表面21隔开的栅极25。栅极端27接触栅极25。源区28邻接栅结构24的第一侧，漏区29邻接栅结构24的第二侧。源极端31接触源区28，漏极端32接触漏区29。制造如场效应晶体管等半导体器件23的技术早已是本领域公知技术。应该明白，半导体器件23并不限于MOSFET。例如，可以是双极晶体管、二极管、双极互补金属氧化半导体(BiCMOS)、金属半导体场效应晶体管(MESFET)、异质结场效应晶体管(HFET)、调制掺杂场效应晶体管(MODFET)等等。
图2是具有设置于其上的本发明金属化系统36的半导体衬底20的剖面图。按本发明的实施例，金属化系统36是三层金属化系统，其中每层皆用溅射淀积技术形成。附着层37形成或溅射淀积于半导体衬底20的下表面22上。附着层37合适的材料有选自元素周期表中IVB族和VB族的过渡元素。例如，附着层37为约300埃-3000埃厚的钛。附着层37的厚度最好为500埃。附着层37用以加强半导体衬底20和此后将说明的随后形成的金属层之间的附着力。应该注意的是，层37的热膨胀系数应基本上与随后形成的金属层匹配，这样方可以保证在升高的温度下机械和化学键合的质量。
利用溅射淀积技术在附着层37上形成阻挡层38。例如，阻挡层38为约1000埃-5000埃厚的镍钒混合物。阻挡层38的厚度最好为3000埃。根据本发明，钒在阻挡层38中的浓度在约3wt％-约31wt％范围内。钒的浓度最好为约7wt％，镍的浓度最好为约93wt％。应该明白，钒的重量百分比也可以小于3％或大于31％。镍和钒的组合物形成用于防止再流焊工艺中镍溶解和并随后扩散的阻挡层。
阻挡层38其它合适的组合物有镍合金，如，镍-铌(NiNb)、镍-钽(NiTa)、镍-硫(NiS)、镍-锑(NiSb)、镍-钪(NiSc)、镍-钐(NiSm)、镍-锡(NiSn)、镍-镁(NiMg)、镍-钇(NiY)、镍-铪(NiHf)、和镍-锆(NiZr)等。
利用溅射淀积技术在阻挡层38上形成保护层39。保护层39合适的材料有金和金合金。例如，保护层39可以为约500埃-3000埃厚。保护层39的厚度最好为1000埃。保护层39用于防止阻挡层38中的镍被氧化。
尽管已说明层37、38、39是利用溅射淀积技术形成的，但应该明白，本发明并不限于此。例如，可以利用真空蒸发技术形成层37、38、39。
图3是加热使金属合金层中的各金属再分布后图2所示金属化系统36中各金属的分布情况。根据本发明，金属化系统36是三层金属化系统，其中第一层37是钛，第二层38是镍和钒的组合物，第三层39是金。更具体地，图3示出了金属化系统36的每一层的厚度和其中各金属的分布情况。0埃处表示的是图2中半导体衬底20与附着层37间的界面。500埃处表示的是图2中的附着层37与阻挡层38间的界面。3500埃处表示的是图2中的阻挡层38与保护层39间的界面。4500埃处表示的是图2中的金属化系统36的边界，这是与焊接管芯贴装材料间的界面。
加热使最初淀积于阻挡层38中的镍和钒混合物重新分布，混合物的浓度达到平衡。溅射NiV混合物后的加热或许归因于各处理步骤或者组件的再流焊制造步骤。镍浓度41在阻挡层38中分布，其峰值浓度大概在阻挡层38的中间。镍浓度在靠近附着层37和阻挡层38的界面或阻挡层38与保护层39的界面处减小。钒的峰值浓度(由参考数字40表示)发生在靠近阻挡层38与保护层39的界面处。阻挡层38中，镍浓度象钒在靠近阻挡层38和保护层39间的界面处为峰值一样在此减小。钒的这个峰值浓度或钒的聚集避免了镍从阻挡层38溶解到用作管芯贴装材料的焊料中。
例如，保护层39中的金在再流焊工艺期间的高温下溶入焊料中。阻挡金属如镍和钒可以防止焊料成分向下表面22扩散。一般情况下，首先把具有金属化系统36的管芯贴装到选择地镀有镍的铜引线框上(未示出)，然后，或者镀金或者镀银。用于将由半导体衬底20制作的管芯贴装于引线框上的焊料例如有85％的铅(Pb)/10％的锑(Sb)/5％的锡(Sn)、或80％的铅(Pb)/10％的锡(Sn)/10％的锑(Sb)、或97.5％的铅(Pb)/2.5％的银(Ag)、或62％的锡(Sn)/36％的铅(Pb)/2％的银(Ag)等组合物。金属化系统36通过约190℃(摄氏度)-410℃的温度下的再流焊键合到引线框上。当温度下降时，焊料便将金属化系统36键合到引线框上。
至此，应该理解，本发明提供了一种适于用在高温过程的金属化系统。例如，金属化系统36适于用在约190-410℃温度下的管芯贴装工艺中。该金属化系统可以采用的焊料合金、镀有材料的引线框、键合技术、及半导体衬底材料的范围很广。另外，金属化系统还使衬底具有良好地附着力，且在焊料-金属系统界面处只形成很少的空洞。应该明白，该实验结果表明基本上没形成空洞。所以，本发明提供了一种适于用在如再流焊工艺等高温工艺的系统。
在展示和说明了本发明的具体实施例后，对于本领域的普通技术人员来说由此可以做出进一步的改型和改进。例如，本发明说明了金属化系统用作背面金属。然而，应该明白，本发明也可以用作正面金属系统。可以对金属化系统构图，然后用作衬底20上表面21的互连。例如，可以按倒装芯片封装形式焊接带有互连半导体器件的金属化系统、且具有上表面键合焊盘的衬底。

Claims (10)

1.一种金属化系统结构，该结构包括：
具有表面(22)的衬底(20)；
设置在表面(22)上的第一层(37)；及
设置于第一层(37)上的第二层(38)，第二层(38)含镍合金。
2.根据权利要求1的金属化系统结构，其特征在于，第二层(38)是选自由镍-钒(NiV)、镍-铌(NiNb)、镍-钽(NiTa)、镍-硫(NiS)、镍-锑(NiSb)、镍-钪(NiSc)、镍-钐(NiSm)、镍-锡(NiSn)、镍-镁(NiMg)、镍-钇(NiY)、镍-铪(NiHf)、和镍-锆(NiZr)组成的组中的一种组合物。
3.根据权利要求1的金属化系统结构，其特征在于，第二层是一种按重量计钒约占3％-31％的组合物。
4.根据权利要求1的金属化系统结构，其特征在于，第一层(37)是选自IVB和VB族的一种过渡元素。
5.一种半导体器件，该器件包括：
具有第一表面(21)和第二表面(22)的半导体衬底(20)，第一表面(21)具有由其形成的晶体管；
设置于第一表面(21)和第二表面(22)中至少一个上的附着层(37)；及
设置于附着层(37)的阻挡层(38)，阻挡层(38)含镍合金。
6.根据权利要求5的半导体器件，其特征在于，阻挡层(38)是选自由镍-钒(NiV)、镍-铌(NiNb)、镍-钽(NiTa)、镍-硫(NiS)、镍-锑(NiSb)、镍-钪(NiSc)、镍-钐(NiSm)、镍-锡(NiSn)、镍-镁(NiMg)、镍-钇(NiY)、镍-铪(NiHf)、和镍-锆(NiZr)组成的组中的一种组合物。
7.一种用于引线框的金属化系统，该系统包括：
设置于引线框上的第一层(37)；
设置于第一层(37)上的第二层(38)，第二层(38)含镍合金。
8.根据权利要求7的金属化系统结构，其特征在于，第二层(38)是选自由镍-钒(NiV)、镍-铌(NiNb)、镍-钽(NiTa)、镍-硫(NiS)、镍-锑(NiSb)、镍-钪(NiSc)、镍-钐(NiSm)、镍-锡(NiSn)、镍-镁(NiMg)、镍-钇(NiY)、镍-铪(NiHf)、和镍-锆(NiZr)组成的组中的一种组合物。
9.根据权利要求7的金属化系统结构，其特征在于，第二层(38)是一种按重量计钒约占3％-31％的组合物。
10.根据权利要求7的金属化系统结构，其特征在于，第一层(37)是选自IVB和VB族的一种过渡元素。
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