CN100487520C - 提供偏振图案的设备 - Google Patents

提供偏振图案的设备 Download PDF

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Publication number
CN100487520C
CN100487520C CNB2005100729883A CN200510072988A CN100487520C CN 100487520 C CN100487520 C CN 100487520C CN B2005100729883 A CNB2005100729883 A CN B2005100729883A CN 200510072988 A CN200510072988 A CN 200510072988A CN 100487520 C CN100487520 C CN 100487520C
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CN
China
Prior art keywords
polarization
pattern
pupil
polarizer
polarization pattern
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Expired - Fee Related
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CNB2005100729883A
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English (en)
Chinese (zh)
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CN1702492A (zh
Inventor
迈克尔·M.·阿伯特
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ASML Holding NV
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ASML Holding NV
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Publication of CN1702492A publication Critical patent/CN1702492A/zh
Application granted granted Critical
Publication of CN100487520C publication Critical patent/CN100487520C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/06—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of fluids in transparent cells
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/08—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of polarising materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polarising Elements (AREA)
CNB2005100729883A 2004-05-25 2005-05-25 提供偏振图案的设备 Expired - Fee Related CN100487520C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/852,099 US7324280B2 (en) 2004-05-25 2004-05-25 Apparatus for providing a pattern of polarization
US10/852,099 2004-05-25

Publications (2)

Publication Number Publication Date
CN1702492A CN1702492A (zh) 2005-11-30
CN100487520C true CN100487520C (zh) 2009-05-13

Family

ID=34936768

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100729883A Expired - Fee Related CN100487520C (zh) 2004-05-25 2005-05-25 提供偏振图案的设备

Country Status (9)

Country Link
US (3) US7324280B2 (enExample)
EP (2) EP1749241A1 (enExample)
JP (2) JP4361513B2 (enExample)
KR (1) KR100665138B1 (enExample)
CN (1) CN100487520C (enExample)
DE (1) DE602005008666D1 (enExample)
SG (1) SG117600A1 (enExample)
TW (1) TWI280460B (enExample)
WO (1) WO2005116772A1 (enExample)

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TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
TWI385414B (zh) 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
CN101793993B (zh) 2004-01-16 2013-04-03 卡尔蔡司Smt有限责任公司 光学元件、光学布置及系统
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DE102008013567A1 (de) 2007-05-08 2008-11-13 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
US20080285000A1 (en) * 2007-05-17 2008-11-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4971932B2 (ja) * 2007-10-01 2012-07-11 キヤノン株式会社 照明光学系、露光装置、デバイス製造方法および偏光制御ユニット
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US8045161B2 (en) * 2008-03-18 2011-10-25 The Board Of Trustees Of The University Of Illinois Robust determination of the anisotropic polarizability of nanoparticles using coherent confocal microscopy
US8334976B2 (en) 2008-03-18 2012-12-18 The Board Of Trustees Of The University Of Illinois Second-order nonlinear susceptibility of a nanoparticle using coherent confocal microscopy
NL1036786A1 (nl) * 2008-05-08 2009-11-11 Asml Netherlands Bv Lithographic apparatus and method.
JP5319766B2 (ja) * 2008-06-20 2013-10-16 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の光学系及びマイクロリソグラフィ露光方法
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CN107991728B (zh) 2013-08-23 2020-06-16 科磊股份有限公司 宽带及宽视场角补偿器
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JP6619619B2 (ja) * 2015-11-04 2019-12-11 日東電工株式会社 偏光子、偏光板および偏光子の製造方法
CN105785581B (zh) * 2016-05-09 2018-06-22 湖州中科光电技术有限公司 一种用于产生旋转对称偏振光的微结构器件的设计方法
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