CN100474084C - 液晶显示器件 - Google Patents

液晶显示器件 Download PDF

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Publication number
CN100474084C
CN100474084C CNB2004100712144A CN200410071214A CN100474084C CN 100474084 C CN100474084 C CN 100474084C CN B2004100712144 A CNB2004100712144 A CN B2004100712144A CN 200410071214 A CN200410071214 A CN 200410071214A CN 100474084 C CN100474084 C CN 100474084C
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China
Prior art keywords
semiconductor film
liquid crystal
tft
film
pixel
Prior art date
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Expired - Fee Related
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CNB2004100712144A
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English (en)
Chinese (zh)
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CN1577027A (zh
Inventor
山崎舜平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN1577027A publication Critical patent/CN1577027A/zh
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Publication of CN100474084C publication Critical patent/CN100474084C/zh
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CNB2004100712144A 2003-07-14 2004-07-14 液晶显示器件 Expired - Fee Related CN100474084C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003273869 2003-07-14
JP273869/2003 2003-07-14
JP273869/03 2003-07-14

Related Child Applications (1)

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CN2009100096855A Division CN101483180B (zh) 2003-07-14 2004-07-14 液晶显示器件

Publications (2)

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CN1577027A CN1577027A (zh) 2005-02-09
CN100474084C true CN100474084C (zh) 2009-04-01

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CN2009100096855A Active CN101483180B (zh) 2003-07-14 2004-07-14 液晶显示器件
CNB2004100712144A Expired - Fee Related CN100474084C (zh) 2003-07-14 2004-07-14 液晶显示器件

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CN2009100096855A Active CN101483180B (zh) 2003-07-14 2004-07-14 液晶显示器件

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JP (3) JP2010250341A (ja)
CN (2) CN101483180B (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1995787A3 (en) * 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method therof
KR101252001B1 (ko) 2006-06-15 2013-04-08 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
US7738050B2 (en) * 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
US7611930B2 (en) * 2007-08-17 2009-11-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device
KR102426826B1 (ko) * 2008-09-19 2022-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2406826B1 (en) 2009-03-12 2017-08-23 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
TWI485781B (zh) 2009-03-13 2015-05-21 Semiconductor Energy Lab 半導體裝置及該半導體裝置的製造方法
US8338226B2 (en) * 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8778745B2 (en) * 2010-06-29 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20130139438A (ko) 2012-06-05 2013-12-23 삼성디스플레이 주식회사 박막 트랜지스터 기판
KR20220013471A (ko) * 2012-06-29 2022-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 디스플레이 디바이스
KR102032962B1 (ko) 2012-10-26 2019-10-17 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
WO2017170767A1 (ja) * 2016-04-01 2017-10-05 日東電工株式会社 液晶調光部材、光透過性導電フィルム、および液晶調光素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409134A (en) * 1980-03-03 1983-10-11 Shunpei Yamazaki Photoelectric conversion semiconductor and manufacturing method thereof

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JPH0783460B2 (ja) * 1987-01-08 1995-09-06 三洋電機株式会社 輝度制御回路
JPH11223833A (ja) * 1988-05-17 1999-08-17 Seiko Epson Corp アクティブマトリクスパネル及びビューファインダー
JPH01309379A (ja) * 1988-06-07 1989-12-13 Sumitomo Metal Ind Ltd 薄膜半導体素子
JP3121005B2 (ja) * 1990-11-30 2000-12-25 株式会社日立製作所 薄膜半導体装置とその製造方法及び製造装置並びに画像処理装置
JPH04253342A (ja) * 1991-01-29 1992-09-09 Oki Electric Ind Co Ltd 薄膜トランジスタアレイ基板
JPH04266019A (ja) * 1991-02-20 1992-09-22 Canon Inc 成膜方法
JP3429034B2 (ja) * 1992-10-07 2003-07-22 シャープ株式会社 半導体膜の製造方法
JP3344072B2 (ja) * 1994-03-31 2002-11-11 ソニー株式会社 薄膜トランジスタの製造方法
JPH0843858A (ja) * 1994-07-29 1996-02-16 Canon Inc 画像表示装置及びその製造方法
EP0731493A3 (en) * 1995-02-09 1997-01-22 Applied Komatsu Technology Inc Method for forming a polycrystalline semiconductor film
JP2954039B2 (ja) * 1996-09-05 1999-09-27 日本電気株式会社 ＳｉＧｅ薄膜の成膜方法
CN1097299C (zh) * 1997-03-10 2002-12-25 佳能株式会社 淀积膜形成工艺
JP4027465B2 (ja) * 1997-07-01 2007-12-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその製造方法
JP3423592B2 (ja) * 1997-10-27 2003-07-07 キヤノン株式会社 表示装置用基板とその製造方法及び液晶表示装置及び投射型液晶表示装置
JP3456693B2 (ja) * 1998-11-12 2003-10-14 シャープ株式会社 データ信号線駆動回路および画像表示装置
JP2002014628A (ja) * 2000-04-27 2002-01-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2001326360A (ja) * 2000-05-18 2001-11-22 Sharp Corp アクティブマトリクス基板の製造方法およびアクティブマトリクス基板および薄膜電界効果トランジスタの製造方法
GB0017471D0 (en) * 2000-07-18 2000-08-30 Koninkl Philips Electronics Nv Thin film transistors and their manufacture
JP4896302B2 (ja) * 2001-04-09 2012-03-14 株式会社半導体エネルギー研究所 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409134A (en) * 1980-03-03 1983-10-11 Shunpei Yamazaki Photoelectric conversion semiconductor and manufacturing method thereof

Also Published As

Publication number Publication date
CN101483180B (zh) 2011-11-16
JP2011203746A (ja) 2011-10-13
JP2013047852A (ja) 2013-03-07
JP2010250341A (ja) 2010-11-04
CN1577027A (zh) 2005-02-09
CN101483180A (zh) 2009-07-15
JP5250662B2 (ja) 2013-07-31
JP5288666B2 (ja) 2013-09-11

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