CN100468738C - 具有电容器的半导体设备及其制造方法 - Google Patents

具有电容器的半导体设备及其制造方法 Download PDF

Info

Publication number
CN100468738C
CN100468738C CNB031478204A CN03147820A CN100468738C CN 100468738 C CN100468738 C CN 100468738C CN B031478204 A CNB031478204 A CN B031478204A CN 03147820 A CN03147820 A CN 03147820A CN 100468738 C CN100468738 C CN 100468738C
Authority
CN
China
Prior art keywords
memory node
bond pad
cup
pad shapes
vertical shaft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB031478204A
Other languages
English (en)
Chinese (zh)
Other versions
CN1536669A (zh
Inventor
郑泰荣
李宰求
朴济民
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1536669A publication Critical patent/CN1536669A/zh
Application granted granted Critical
Publication of CN100468738C publication Critical patent/CN100468738C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
CNB031478204A 2003-04-03 2003-06-25 具有电容器的半导体设备及其制造方法 Expired - Lifetime CN100468738C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20989/2003 2003-04-03
KR10-2003-0020989A KR100522544B1 (ko) 2003-04-03 2003-04-03 캐패시터를 구비하는 반도체 장치 및 그 제조 방법

Publications (2)

Publication Number Publication Date
CN1536669A CN1536669A (zh) 2004-10-13
CN100468738C true CN100468738C (zh) 2009-03-11

Family

ID=29707778

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031478204A Expired - Lifetime CN100468738C (zh) 2003-04-03 2003-06-25 具有电容器的半导体设备及其制造方法

Country Status (6)

Country Link
JP (1) JP2004311918A (ko)
KR (1) KR100522544B1 (ko)
CN (1) CN100468738C (ko)
DE (1) DE10348200A1 (ko)
GB (1) GB2400236B (ko)
TW (1) TWI291231B (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010034198A (ja) 2008-07-28 2010-02-12 Elpida Memory Inc 半導体装置及びその製造方法
JP5641681B2 (ja) 2008-08-08 2014-12-17 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置の製造方法
JP2011061067A (ja) 2009-09-11 2011-03-24 Elpida Memory Inc 半導体装置の製造方法及び半導体装置
KR101877878B1 (ko) 2012-06-11 2018-07-13 에스케이하이닉스 주식회사 복층의 스토리지노드를 구비한 반도체장치 및 그 제조 방법
WO2015117222A1 (en) * 2014-02-05 2015-08-13 Conversant Intellectual Property Management Inc. A dram memory device with manufacturable capacitor
CN107845633B (zh) * 2017-10-30 2023-05-12 长鑫存储技术有限公司 存储器及其制造方法
CN107887388B (zh) * 2017-11-27 2023-06-20 长鑫存储技术有限公司 晶体管结构、存储单元、存储器阵列及其制备方法
CN114188282B (zh) * 2020-09-14 2022-10-28 长鑫存储技术有限公司 半导体器件及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4070919B2 (ja) * 1999-01-22 2008-04-02 富士通株式会社 半導体装置及びその製造方法
KR100331568B1 (ko) * 2000-05-26 2002-04-06 윤종용 반도체 메모리 소자 및 그 제조방법
KR100375221B1 (ko) * 2000-07-10 2003-03-08 삼성전자주식회사 스토리지 노드 형성방법
KR100416601B1 (ko) * 2001-06-30 2004-02-05 삼성전자주식회사 실린더형 커패시터를 포함하는 반도체 소자 및 그 제조 방법
GB2386471B (en) * 2001-12-11 2004-04-07 Samsung Electronics Co Ltd A method for fabricating a one-cylinder stack capacitor

Also Published As

Publication number Publication date
TW200421609A (en) 2004-10-16
JP2004311918A (ja) 2004-11-04
DE10348200A1 (de) 2004-11-04
TWI291231B (en) 2007-12-11
GB0324534D0 (en) 2003-11-26
CN1536669A (zh) 2004-10-13
GB2400236A (en) 2004-10-06
KR100522544B1 (ko) 2005-10-19
GB2400236B (en) 2005-09-14
KR20040086649A (ko) 2004-10-12

Similar Documents

Publication Publication Date Title
US7026208B2 (en) Methods of forming integrated circuit devices including cylindrical capacitors having supporters between lower electrodes
CN100481393C (zh) 自由倾斜的叠层电容器的制造方法
CN108010913B (zh) 半导体存储器结构及其制备方法
US7582925B2 (en) Integrated circuit devices including insulating support layers
US6784479B2 (en) Multi-layer integrated circuit capacitor electrodes
US6399982B1 (en) Rough (high surface area) electrode from Ti and TiN capacitors and semiconductor devices including same
JPH0613570A (ja) 犠牲酸化膜蒸着およびケミカルメカニカルポリシングを利用する最適スタック型コンテナキャパシタｄｒａｍセル
KR100532437B1 (ko) 반도체 메모리 소자 및 그 제조 방법
US6507064B1 (en) Double sided container capacitor for DRAM cell array and method of forming same
CN100468738C (zh) 具有电容器的半导体设备及其制造方法
CN115696913A (zh) 半导体器件
CN113097140A (zh) 半导体结构的制备方法及半导体结构
US7049203B2 (en) Semiconductor device having a capacitor and method of fabricating same
KR100960471B1 (ko) 반도체 소자 및 그 제조 방법
JP2002313954A (ja) 半導体記憶装置およびその製造方法
CN115223947B (zh) 半导体结构的制造方法及半导体结构
WO2022142178A1 (zh) 存储器及其制作方法
US6717201B2 (en) Capacitor structure
JP2004031886A (ja) コンタクトの製造方法
KR100811268B1 (ko) 반도체 소자의 스토리지 전극 형성방법
KR20050019500A (ko) 반도체 소자에서의 캐패시터 구조 및 그에 따른 형성방법
JP3987703B2 (ja) 容量素子及びその製造方法
KR100507858B1 (ko) 반도체장치의 캐패시터 제조방법
KR20040011993A (ko) 반도체 메모리 소자의 제조방법
TW202329398A (zh) 半導體結構及其製作方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20090311