CN100468620C - 基板处理装置 - Google Patents

基板处理装置 Download PDF

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CN100468620C
CN100468620C CNB2007101086955A CN200710108695A CN100468620C CN 100468620 C CN100468620 C CN 100468620C CN B2007101086955 A CNB2007101086955 A CN B2007101086955A CN 200710108695 A CN200710108695 A CN 200710108695A CN 100468620 C CN100468620 C CN 100468620C
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岛井太
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Tokyo Ohka Kogyo Co Ltd
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    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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Abstract

本发明提供一种可令被处理基板的上面的温度分布散乱降低的基板处理装置。利用缩放机构令下箱体下降，在上箱体与下箱体之间形成可令机械人的手臂进入的空间。该状态下，将载置在机械人的手臂上的被处理基板插入至加热板的上方。然后，使气缸组件作动而使支承销上升，从机械人的手臂上可将被处理基板放在支承销上。随后，机械人的手臂后退，同时支承销下降，将被处理基板载置在加热板上。与此同时使箱体通过缩放机构的作动上升，安装在下箱体的上端面上的密封构件与上箱体的下端面顶触，上箱体与下箱体形成一体，在内部形成了气密的空间。

Description

基板处理装置
技术领域
本发明涉及一种对半导体晶片或玻璃基板等被处理基板施以热处理等的基板处理装置。
背景技术
当在半导体晶片或玻璃基板等被处理基板上形成集成电路时，在被处理基板表面被覆规定图案的抗蚀剂掩模，并在该抗蚀剂掩模上依次施以CVD、蚀刻及掺杂等的各种处理。特别在最近，伴随着高集成化以及高密度化，需要掩模进一步的细小化，在对应于该需要的情形下，开发了各种构成掩模的感光性抗蚀剂材料，例如作为解析度以及灵敏度优良的抗蚀剂，值得注意的有化学增幅型抗蚀剂。
当由所述的感光性抗蚀剂形成规定图案的抗蚀剂膜时，在基板表面涂敷用于形成抗蚀剂膜的涂敷液后，将涂敷液在加热处理装置内进行加热而形成了膜，然后，以规定图案对该膜照射光，如果抗蚀剂膜是阳型的话，那么光未照射到的部分将作为不溶性部分而残留，而如果抗蚀剂膜为阴型的话，则光照射到的部分将作为不溶性部分而残留。
专利文献1所公开的加热装置的构造如图4所示，在箱体100内的略中央部配置有用于对被处理基板W进行冷却处理的冷却板101，并且在比冷却板101还靠近上方配置用于对被处理基板W进行加热处理的加热板102，并令升降销103贯穿于冷却板101中而向上方延伸，且利用其上端支承被处理基板W的下面。另外，在箱体100的侧面配置有机械人104，并且在箱体100的侧面形成用于与该机械人104间授受被处理基板W的搬入/搬出用的开口105。
专利文献1：日本特开平11-162804号公报
发明内容
对于所述的以往的加热处理装置来说，必须确保在加热板(冷却板)的上方机械人104的手臂进入的空间，这样将处理基板载置在加热板(冷却板)的状态下，被处理基板的上方的空间会较大，在基板上的温度分布会产生散乱，会对涂敷液的干燥带来影响。
为了解决所述课题，技术方案1涉及的发明被构成为，其在箱体内设置有用于载置被处理基板的载置台，所述箱体被分离为上箱体和下箱体，所述上箱体以其周围载置在支承构件上的方式被支承，所述下箱体可相对上箱体升降移动并支承所述载置台，通过所述下箱体上升，下箱体的上端面与上箱体的下端面顶触，将所述上箱体从所述支承构件抬起，所述上箱体因自重而使其下端面与下箱体的上端面气密地顶触。
另外技术方案2涉及的发明被构成为，其在箱体内设置有用于载置被处理基板的载置台，所述箱体被分离为上箱体和下箱体，所述上箱体可利用升降机构相对下箱体升降移动，在所述下箱体内支承有所述载置台，通过所述上箱体下降，上箱体的下端面与下箱体的上端面发生顶触，将上箱体从升降机构抬起，所述上箱体会因自重而使其下端面与下箱体的上端面气密地顶触。
作为被支承于所述下箱体上的载置台，一般情况下为加热板。另外虽然也可以考虑在所述上箱体上安装整流板等，但在使用感光性抗蚀剂作为涂敷液的情况下，由于感光性抗蚀剂膜会因骤冷而使得灵敏度上升，故也可以在上箱体内配置冷却板。
就本发明而言，当对被处理基板进行搬出搬入时，打开上箱体与下箱体的间隔会令搬出搬入容易进行，在处理中使上箱体与下箱体紧密地关闭，由于可使载置台(电热板)与顶部的间隔狭小故很难产生温度分布的散乱。
另外，伴随着被处理基板的大型化，一旦箱体也变大则会因为自重而容易使箱体本身产生变形。然而，如本申请那样利用自身的重量来维持气密状态，会省去调整箱体自身达到水平的工夫。
附图说明
图1是本发明涉及的基板处理装置的打开状态的剖视图。
图2是同一基板处理装置的关闭状态的剖视图。
图3是另一实施例涉及的基板处理装置的打开状态的剖视图。
图4是以往的基板处理装置的剖视图。
符号说明：1...箱体；2...上箱体；2a...上箱体的下端面；3...下箱体；3a...下箱体的上端面；4...托架；5...支承构件；6...密封构件；7...缩放机构；8...加热板；9...整流板；10...支承销；11...气缸组件；12...机械人；13...卡合部；13a...突出部；14...棒；14a...大径部；W...被处理基板。
具体实施方式
以下，将基于附图对用于实施本发明的最优良的方式进行详细地说明。图1是本发明的基板处理装置的打开状态的剖视图，图2是同一基板处理装置的关闭状态的剖视图，将基板处理装置的箱体1分割为上箱体2与下箱体3。
将上箱体2的下端面2a形成为平面，且将托架4向外侧突出，并使该托架4通过载置在支承构件5上而被支承。此外，对于该实施例来说，支承构件5被不能升降地固定。
另外，将下箱体3的上端面3a形成为平面，并全周地设有O环等的密封构件6。密封构件6也可以被安装在箱体2的下端面2a上。另外，也可以使用迷宫式密封来代替密封构件6。
下箱体3可以根据缩放机构7而进行升降移动，该缩放机构7是利用卧式气缸组件而进行开关移动的，另外在下箱体3的内部配置有加热板8，并将与该加热板8相面对的整流板9配置在所述上箱体2内。此外，也可不设置整流板9，而配置冷却板来代替整流板9。
在所述加热板8上沿板厚方向形成有通孔8，且在该通孔内插通有支承销10，该支承销10是利用加热板8下方的气缸组件11而相对加热板8进行升降移动。
对由以上的构成所组成的基板处理装置的作用进行阐述。首先，如图1所示的状态，即利用缩放机构7使下箱体3下降，在上箱体2与下箱体3之间形成可令机械人12的手臂进入的空间。在该状态下，将载置在机械人12的手臂上的被处理基板W插入至加热板8的上方。然后，将气缸组件11作动而使支承销10上升，这样可从机械人12的手臂将被处理基板W放在支承销10上。
随后，机械人12的手臂后退，同时支承销10下降，将被处理基板W载置在加热板8上。另外与此同时箱体3通过缩放机构7的作动而上升，并且使安装在下箱体3的上端面3a上的密封构件6与上箱体2的下端面2a顶触，这样上箱体2与下箱体3形成一体，可在内部形成气密的空间。
在将上箱体2与下箱体3关闭了的状态下，被处理基板W的上方空间变得极其狭小，不会发生因气流引起温度分布散乱的现象。
图3是另一实施例的基板处理装置的打开状态的剖视图，在上箱体2的上面设有卡合部13，利用未图示的升降机构而将上下移动的棒14插入该卡合部13中。在卡合部13的上面为朝向内部的突出部13a，在棒14位于上升位置时棒下端的大径部14a与所述突出部13a卡止，这样利用棒14可将上箱体2抬起。
然后，若棒14下降，则上箱体2的下端面2a将与安装在下箱体3的上端面3a的密封构件6顶触，这样上箱体2与下箱体3形成一体而可在内部形成气密的空间。

Claims (2)

1.一种基板处理装置，其在箱体内设置有用于载置被处理基板的载置台，其特征在于:所述箱体被分离为上箱体和下箱体，所述上箱体以其周围载置在支承构件上的方式被支承，所述下箱体能够相对上箱体升降移动并支承所述载置台，通过所述下箱体上升，下箱体的上端面与上箱体的下端面顶触，将所述上箱体从所述支承构件抬起，所述上箱体因自重而使其下端面与下箱体的上端面气密地顶触。
2.一种基板处理装置，其在箱体内设置有用于载置被处理基板的载置台，其特征在于:所述箱体被分离为上箱体和下箱体，所述上箱体能够利用升降机构相对下箱体升降移动，在所述下箱体内支承有所述载置台，通过所述上箱体下降，上箱体的下端面与下箱体的上端面顶触，将上箱体从升降机构抬起，所述上箱体因自重而使其下端面与下箱体的上端面气密地顶触。
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JP4912227B2 (ja) * 2007-06-14 2012-04-11 東京応化工業株式会社 加熱処理装置

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TWI360159B (zh) 2012-03-11
TW200805451A (en) 2008-01-16
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JP4901323B2 (ja) 2012-03-21
KR20070120889A (ko) 2007-12-26

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