TWI360159B - - Google Patents

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TWI360159B
TWI360159B TW096119378A TW96119378A TWI360159B TW I360159 B TWI360159 B TW I360159B TW 096119378 A TW096119378 A TW 096119378A TW 96119378 A TW96119378 A TW 96119378A TW I360159 B TWI360159 B TW I360159B
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Taiwan
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casing
substrate
case
end surface
shell
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TW096119378A
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TW200805451A (en
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Futoshi Shimai
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Tokyo Ohka Kogyo Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Solid Materials (AREA)

Description

1360159 (1) 九、發明說明 【發明所屬之技術領域】 本發明是關於在半導體晶圓或玻璃基板等的被處理基 板施以熱處理等的基板處理裝置。 【先前技術】 擬在半導體晶圓或玻璃基板等的被處理基板上形成積 體電路，則於被處理基板表面被覆所定圖案的光阻遮蔽。 而從此光阻遮蔽上施以CVD，蝕刻，摻雜等的各種處理。 尤其是在最近，隨著高積體化及高密度化，被期盼遮蔽的 更微細化，因應於此期盼的形式上，構成遮蔽的感光性光 阻材料被開發種種，例如作爲解像性及感度上優異的光阻 劑上，以化學放大型光阻劑受注目。 擬以上Μ感光性光阻劑形成所定圖案的光阻膜，則在 基板表面塗佈成爲光阻膜的塗佈液之後，以加熱處理裝置 內加熱塗佈液而形成膜之後，在此膜以所定圖案接觸光線 ，若光阻膜爲正型，而將未接觸到光線的部分作爲不溶性 部分。若爲負型，則將接觸到光線部分留下作爲不溶性部 分。 如第4圖所示地，被揭示於專利文獻1的加熱裝置的 構造，是在殻100內的大約中央部配置冷卻處理被處理基 板w的冷卻板101，或在比冷卻板101還上方配置加熱處 理的被處理基板W的加熱板102，貫通冷卻板101而令昇 降銷103朝上方延伸，在其上端支撐著被處理基板W的 -4- (2) (2)1360159 下面。又’在殼100的側方配置機器人104，而將被處理 基板W授受在與此機器人104之間所用的搬入，搬出用 的開口 1 0 5形成在殼1 00的側面。 專利文獻1 :日本特開平1 1 -1 62804號公報 【發明內容】 在上述的習知的加熱處理裝置，必須確保在加熱板（ 冷卻板）的上方能令機器人104的臂部進入的空間，而在 加熱板（冷卻板）載置被處理基板的狀態下，使得被處理 基板上方的空間變大，在基板上的溫度分布上產生紊亂， 會影響到塗佈液的乾燥。 解決上述課題的申請專利範圍第1項的發明，是屬於 在殼內設置載置被處理基板的載置台的基板處理裝置，其 特徵爲：作成上述殼是被分離成上殼與下殼’上述上殼是 將其周圍裝載在支撐構件並被支撐，上述下殼是對於上殼 作成可昇降移動，而且支撐著上述載置台，上述下殼予以 上昇，令下殼的上端面抵接於上殻的下端面’而從上述支 撐構件抬高上殻，上述上殼是藉由自重令其下端面氣密地 抵接於下殼的上端面的構成。 又，申請專利範圍第2項的發明，是屬於在殼內設置 載置被處理基板的載置台的基板處理裝置’其特徵爲：作 成上述殻是被分離成上殼與下殻’上述上殼是藉由昇降機 構對於下殻作成可昇降移動’在上述下殼內支撑著上述載 置台，上述上殻予以下降’令上殼的下端面抵接於下殼的 -5- 1360159 p) 上端面，而從昇降機構抬高上殼，上述上殻是藉由自重令 其下端面氣密地抵接於下殼的上端面的構成。 作爲被支撐於上述下殼的載置台，一般爲加熱板。又 ’也可考量在上述上殻安裝整流板等，惟作爲塗佈液使用 感光性光阻劑時，感光性光阻膜是藉由急冷來提高感度故 ，因而在上殼內配置冷卻板也可以》 依照本發明，取放被處理基板之際，隔著上殼與下殼 之間隔而將取放作成容易，處理中密接上殻與下殼，並將 載置台（加熱板）與頂板部之間隔作成窄小之故，因而不 容易產生溫度分布的紊亂。 又’隨著被處理基板的大型化，若殼也變大，則藉由 自重，在殼本體容易產生變形。然而，如本案發明地作成 藉由本身重量來維持氣密狀態，則成爲不需要水平地調整 殼本體的工夫。 【實施方式】 以下，依據圖式詳述實用本發明所用的最佳形態。第 1圖是表示本發明的基板處理裝置的打開狀態的斷面圖， 第2圖是表示相同基板處理裝置的關閉狀態的斷面圖，基 板處理裝置是將殻1分割成上殼2與下殼3。 上殻2是將下端面2a作成平坦面，朝外側突出托架4 ，而將托架4裝載於支撐構件5就被支撐。又，在此實施 例，支撐構件5是不會昇降移動而被固定》 又，下殼3是將上端面3a作成平坦面，而在全周設 -6 - (4) (4)1360159 置0型環等的封閉構件6。封閉構件6是安裝於上殼2的 下端面2a也可以。又，代替封閉構件6也可使用迷宮式 密封等。 下殼3是藉由橫置氣缸施以開閉移動的伸縮機構7, 作成可昇降移動’又，在下殼3的內部配置加熱板8，並 將與此加熱板8相對的整流板9配置於上述上殼2內。又 ，整流板9是未設置也可以’而代替整流板9配置冷卻板 也可以。 在上述加熱板8有貫通孔朝厚度方向形成，而在此貫 通孔插通有支撐銷1〇，此支撐銷10是藉由加熱板8下方 的氣缸單元11對於加熱板8進行昇降移動。 針對於以上構成所成的基板處理裝置的作用》首先， 在表示於第1圖的狀態，亦即，藉由伸縮機構7來下降下 殼3，在上殼2與下殻3之間作成機器人12的臂部可進入 的空間。由此狀態，將裝載於機器人12的臂部的被處理 基板W以插入到加熱板8的上方。然後，將氣缸單元11 予以作動而上昇支撐銷1〇，從機器人12的臂部將被處理 基板W接受於支撐銷10上。 然後，令機器人12的臂部後退，同時令支撐銷10下 降，並將被處理基板W載置於加熱板8上。又，與此並 進而使用伸縮機構7之作動，令下殼3上昇’使得安裝於 下殼3的上端面3a的封閉構件6抵接於上殼2的下端面 2a，俾一體化上殻2與下殻3而在內部形成有氣密的空間 (5) (5)1360159 在上殼2與下殻3關閉之狀態下，被處理基板W的 上方空間是成爲極窄小，不會起因於氣流等而使溫度分布 紊亂之情形。 第3圖是表示其他實施例的基板處理裝置的打開狀態 的斷面圖，在上殼2的上面設有卡合部13，而在此卡合部 3插入藉由未圖示的昇降機構進行上下移動的桿14。在卡 合部13的上面成爲朝向內方的突出部13a，當桿14位於 上昇位置時，則桿下端的大徑部14a卡止於上述突出部 13a而以桿14抬高上殼2。 又，當桿14進行下降，則上殻2的下端面2a抵接於 安裝在下殼3的上端面3a的封閉構件6，俾一體化上殼2 與下殻3而在內部形成有氣密的空間。 【圖式簡單說明】 第1圖是表示本發明的基板處理裝置的打開狀態的斷 面圖。 第2圖是表示相同基板處理裝置的關閉狀態的斷面圖 〇 第3圖是表示其他實施例的基板處理裝置的打開狀態 的斷面圖。 第4圖是表示習知的基板處理裝置的斷面圖。 【主要元件符號說明】 1:殼，2:上殻，2a:上殼的下端面，3:下殼， -8- (6) (6)1360159
3a:下殼的上端面，4:托架，5 :支撐構件，6:封閉構 件，7 :伸縮機構，8 :加熱板，9 :整流板，1 0 :支撐銷 ，11:氣缸單元，12:機器人，13:卡合部，13a:突出 部，14:桿，14a:大徑部，W:被處理基板。 -9-

Claims (1)

1360159 第096119378號專利申請案中文申請專利範圍修正本 民國99年12月15日修正 十、申請專利範圍 • 1.基板處理裝置，屬於在殼內設置載置被處理基板的 載置台的基板處理裝置，其特徵爲：上述殼是被分離成上 殼與下殼，上述上殼是將其周圍裝載在支撐構件並被支撐 ，上述下殻是對於上殼作成可昇降移動，而且支撐著上述 φ 載置台，上述下殼予以上昇，令下殼的上端面抵接於上殼 的下端面，而從上述支撐構件抬高上殼，上述上殼是藉由 自重令其下端面氣密地抵接於下殼的上端面。
TW096119378A 2006-06-20 2007-05-30 Substrate treatment apparatus TW200805451A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006169569A JP4901323B2 (ja) 2006-06-20 2006-06-20 基板処理装置

Publications (2)

Publication Number Publication Date
TW200805451A TW200805451A (en) 2008-01-16
TWI360159B true TWI360159B (zh) 2012-03-11

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TW096119378A TW200805451A (en) 2006-06-20 2007-05-30 Substrate treatment apparatus

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US (1) US20070296715A1 (zh)
JP (1) JP4901323B2 (zh)
KR (1) KR100838486B1 (zh)
CN (1) CN100468620C (zh)
TW (1) TW200805451A (zh)

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JP4912227B2 (ja) * 2007-06-14 2012-04-11 東京応化工業株式会社 加熱処理装置
JP2010087343A (ja) * 2008-10-01 2010-04-15 Toray Eng Co Ltd 基板処理装置及び基板載置方法
CN102103333B (zh) * 2009-12-17 2013-08-14 上海微电子装备有限公司 一种烘烤光刻胶的方法及使用该方法的装置
CN103811387B (zh) * 2012-11-08 2016-12-21 沈阳新松机器人自动化股份有限公司 晶圆预对准方法及装置
NL2010471C2 (en) * 2013-03-18 2014-09-24 Levitech B V Substrate processing apparatus.
JP6400771B1 (ja) * 2017-04-11 2018-10-03 株式会社石井表記 ヒータ付き減圧ユニット及び電池製造用装置

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KR100256215B1 (ko) 1993-02-26 2000-06-01 히가시 데쓰로 멀티챔버 시스템
JP3143702B2 (ja) * 1994-10-05 2001-03-07 東京エレクトロン株式会社 熱処理装置
JP3052116B2 (ja) 1994-10-26 2000-06-12 東京エレクトロン株式会社 熱処理装置
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Publication number Publication date
JP2008004580A (ja) 2008-01-10
KR100838486B1 (ko) 2008-06-16
US20070296715A1 (en) 2007-12-27
TW200805451A (en) 2008-01-16
CN101093787A (zh) 2007-12-26
JP4901323B2 (ja) 2012-03-21
KR20070120889A (ko) 2007-12-26
CN100468620C (zh) 2009-03-11

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