TW413832B - Heat processing device - Google Patents
Heat processing device Download PDFInfo
- Publication number
- TW413832B TW413832B TW088100274A TW88100274A TW413832B TW 413832 B TW413832 B TW 413832B TW 088100274 A TW088100274 A TW 088100274A TW 88100274 A TW88100274 A TW 88100274A TW 413832 B TW413832 B TW 413832B
- Authority
- TW
- Taiwan
- Prior art keywords
- hot plate
- heat treatment
- heat
- treatment device
- heater
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
經濟部t央橾準局男工消費合作社印製 413832__ 五、發明説明(1 ) 發明背景 本發明係關於用以藉由加熱處理大尺寸基底,如LCD 基底等之熱處理裝置· 在製造液晶顯示器(LCD)時,一電路圖樣以所謂的 光石印技術形成,其中光阻液體應用至玻璃之LCD基底 以於其上形成阻止膜,而後該阻止膜依照電路圖樣曝光, 而後進行顯影處理。 更特別而言,LCD基底在一淸潔裝置中淸潔,而後在 黏著裝置中受到黏著,光阻膜在塗覆阻止裝置中塗覆在 LCD基底之表面上。而後,光阻膜在熱.處理裝置中加熱 烘烤,且基底在曝光裝置中曝露至光之預定圖樣。已曝光 之L C D基底而後受施加顯影劑並在顯影裝置中顯影,且 此顯影劑以淸潔液體淸洗,藉以完成一顯影處理。 在上述顯影處理中使用以加熱L C D基底之熱處理裝置 包含一熱板,其上放置LCD基底,一加熱器用以經由熱 板加熱LCD基底,一通氣蓋安排成界定一處理空間以配 合熱板,且其具有一通氣孔在天花板之中央,和一快門用 以關閉該處理空間。 現今,對於LCD基底擴大之需求逐漸增加,且急需大 於習知65〇x55〇mm之基底之840x6 50mm 之大尺寸基底。但是,當此種大尺寸LCD基底受到上述 之熱處理時,.在L CD基底之表面內之處理溫度易於變成 不均勻。例如,LCD基底之尺寸愈大,介於LCD基底 之中央和周邊部份間之溫度差異愈大。 (請先閲讀背面之注意事項再填寫本頁) 訂 IX. _ 本紙張尺度適用中國國家標準(CNS ) A4祝格(210 X 297公釐) · 4 _ 413832 a? _B7 五、發明説明(2 ) 因此,當處理大尺寸LCD基底時,需要更嚴格的控制 在熱處理裝置內影響處理溫度之因素。在L C D基底之溫 度分佈中之變化可能由各種因素所引起,其中之一爲來自 熱板之熱之輻射。特別的,熱板之底我面和側面曝露在處 理空間之空氣中,且因此,熱易於由此輻射出,而引起介 於熱板之中央和周邊部份間之溫度差異。此種熱板之溫度 差異會引起介於L C D基底之中央和周邊部份間之溫度差 異,因而使得在LCD基底之表面上之熱均勻性降低。 在熱處理時處理空間之通氣亦爲溫度差異之一因素》在 前述之烘烤處理中,其中形成在LCD基底上之光阻膜受 到加熱,在光阻膜中之溶劑因熱而蒸發,且爲了由處理空 間移去溶劑,空氣經由在通氣蓋中之通氣孔排出。由於通 氣而產生之空氣流使L CD基底或熱板之外側之溫度下降 ,而此種溫度下降,或擾流,會引起介於LCD基底或熱 板之中央和周邊部份間之溫度差異。 經濟部中央揉準局貝工消費合作社印製 (請先聞讀背面之注意事項再填寫本頁) 習知使用之熱板乃以鑄造形成,而加熱器裝設在其中 。由於近來大尺寸LCD基底之趨勢,因此需要使熱板具 有對熱之更高回應,和較小厚度和重量輕。但是,鑄造型 熱板之厚度因其製造方法之限制只可降低至4Omm,且 此鑄造型熱板具有之缺點如對熱之不良回應,難以降低重 量,和會增加裝置之高度等。 發明槪要 本發明之目的乃在提供一種熱處理裝置,其可在熱處 本紙張尺度適用中國國家標準(CNS ) A4祝格(210X297公釐) -5- 413832 五、發明説明(3 ) 理下,在物體之表面內,達成處理溫度之改善均勻性,即 使該物體之尺寸相當大。 依照本發明之第一觀點,於此提供一種熱處理裝置,包 含:一外殼:一熱板安排在該外殼內側以對設置在該熱板 上之物體加熱;一加熱器用以對熱板加熱;和一反射板用 以反射由熱板輻射之熱,其中該反射板之底部份面對該熱 板之下側,和側壁部份面對該熱板之相關側面。 依照本發明之第二觀點.,於此提供一種熱處理裝置,包 含:一外殻;一熱板安排在該外殼內侧以對設置在該熱板 上之物體加熱;一加熱器用以對熱板加熱;和一外側框安 排在設置物體之熱板之部份上,以圍繞該物體》 經濟部中央標準爲貞工消费合作社印装 (請先閱讀背面之注意事項再填寫本頁) 依照本發明之第三觀點,於此提供一種熱處理裝置,包 含:一外殼;一熱板安排在該外殻內側以對設置在該熱板 上之物體加熱:一加熱器用以對熱板加熱:一通氣蓋安排 在該熱板上方,其間界定一處理空間,且該通氣蓋具有通 氣孔;和一快門安排以圍繞該處理空間且可移向或離開該 逋氣孔,其中在加熱處理時,介於通氣蓋和快門間之間隙 設定爲一値,以使當處理空間經由通氣孔通氣時,沿該熱 板之側表面之空氣流受到經由間隙導入處理空間之空氣流 之抑制,藉以減輕該熱板之溫度變化。 依照本發明之第四觀點,於此提供一種熱處理裝置,包 含:一外殼;一熱板安排在該外殼內側以對設置在該熱板 上之物體加熱;一加熱器用以對熱板加熱:一反射板用以 反射由熱板輻射之熱;一外側框安排在設置物體之熱板之 本紙張尺度適用中國國家揉準(CNS ) A4祝格(210X297公釐) _β_ 經濟部中央樣準局貝工消费合作社印装 4138¾^_Βτ__ 五、發明説明(4 ) 部份上,以圍繞該物體:一通氣蓋安排在該熱板上方,其 間界定一處理空間,且該通氣羞具有通氣孔;和一快門安 排以圍繞該處理空間且可移向或離開該通氣孔,其中該反 射板之底部份面對該熱板之下側,和側壁部份面對該熱板 之相關側面,和在加熱處理時,介於通氣蓋和快門間之間 隙設定爲一値,以使當處理空間經由通氣孔通氣時,沿該 熱板之側表面之空氣流受到經由間隙導入處理空間之空氣 流之抑制,藉以減輕該熱板之溫度變化。 依照本發明之第五觀點,於此提供一種熱處理裝置,包 含:一外殻;一熱板安排在該外殼內側以對設置在該熱板 上之物體加熱;和一加熱器用以對熱板加熱,其中該加熱 器壓裝在形成於該熱板中之凹陷中。 依照本發明之第一觀點,該反射板用以反射來自熱板之 輻射熱,藉此,由熱板輻射之熱可反射至熱板。該反射板 之底部份面對熱板之下側和側壁部份面對熱板之相關側面 。由於反射板安排在相關於更多熱輻射之熱板之區域之位 置上,輻射熱可反射至此區域,且因此,可增強熱板之熱 均勻性《 依照本發明之第二觀點,一外側框安排在設置物體之 熱板之部份上,以圍繞該物體,因此可抑制在菌繞物體之 區域之空氣之進入。結果,可抑制擾流且可增強物體之表 面內之處理溫度之均勻性。 依照本發明之第三觀點,在加熱處理時,處理空間在半 關閉狀態下通氣,其中快門保持在接近通氣蓋之位置,且 本紙張尺度適用中國國家揉準(CNS ) Λ4规格(2丨0X297公釐) ^ ο裝 1 (請先閲讀背面之注意事項再填寫本頁) 訂- 413832 A7 B7 五、發明説明(5 ) 因此由於介於通氣蓋和快門間之間隙,處理空間爲不完全 關閉。在此例中,由於通氣而產生兩空氣流,亦即,經由 間隙導入處理空間之空氣流和沿熱板之側面之向上空氣流 。在此兩空氣流中,如果沿熱板之側面之空氣流較大,過 多的熱會由熱板之側面移除,而因此喪失了熱板之熱均勻 性。因此,介於通氣蓋和快門間之間隙設定爲一値,以使 沿該熱板之側表面之空氣流受到經由間隙導入處理空間之 空氣流之抑制,藉以減輕該熱板之溫度變化。結果,來自 熱板之側表面之熱移除受到抑制,進而可改善熱板之熱均 勻性。 經濟部辛央樣準局負工消費合作社印製 依照本發明之第四觀點,一反射板用以反射由熱板輻射 之熱(本發明之第一觀點),一外側框安排在設置物體之 熱板之部份上,以圍繞該物體(本發明之第二觀點),和 在加熱處理時,介於通氣蓋和快門間之間隙設定爲一値, 以使當處理空間經由通氣孔通氣時,沿該熱板之側表面之 空氣流受到經由間隙導入處理空間之空氣流之抑制,藉以 減輕該熱板之溫度變化(本發明之第三觀點)。由於這些 技術特徵之多重效果,可顯著的改善熱板之熱均勻性。 依照本發明之第五觀點,由於該加熱器壓裝在形成於該 熱板中之凹陷中,因此和習知鑄型熱板不同的是,其無需 增加熱板之厚度。因此,和習知熱板比較,本發明之熱板 之厚度可較薄,也因此,本發明之熱板回應熱之梦率較高 ,重量較輕,且更可抑制擾流。 本發明之其它目的和優點將於下述之說明中——呈現 -8- (锖先閱讀背面之注意Ϋ項再填寫本頁) 本紙張尺度適用中國囷家橾準(CNS ) A4規格(210X297公釐) A7 B7 經濟部令央標準局Μ工消费合作社印装 413833 五、發明説明(6 ) ,其部份可由說明中得知,或可由實施本發明而學習而得 。本發明之目的和優點可藉由下述特別指出之設施及其結 合而得。 圖式簡單說明 安排於此且構成說明書之一部份之附圖呈現了本發明之 現在較佳實施例,其和上述之一般說明和下述之較佳實施 例之詳細說明一起用以說明本發明之原理》 圖1爲應用本發明之用於L C D基底之塗覆顯影系統之 不意平面圖; 圖2·爲依照本發明之一實施例之熱處理裝置之截面圖, 其安裝在圖1之系統中; 圖3 A和3 B分別爲在加熱器壓裝在一熱板前後之狀態 之截面圖; 圖4爲圖2之熱處理裝置之熱板之截面立體圖: 圖5爲圖2之熱處理裝置之快門之立體圖: 圖6爲用於圖2之熱處理裝置之快門之升起機構之截面 圖, 圖7爲在加熱處理時,圖2之熱處理裝置之快門之狀態 之截面圖; 圖8爲在加熱處理時,圖2之熱處理裝置之快門之另一 狀態之截面圖: ’ 圖9爲由圖2之熱處理裝置所執行之處理之流程圖: 圖10爲用以調整介於通氣蓋和快門間之間隙之機構之 , 1 'V'-<請先間讀背面之注意事項再填寫本頁)Printed by Men ’s Consumer Cooperative of the Central Bureau of the Ministry of Economic Affairs 413832__ 5. Description of the Invention (1) Background of the Invention The present invention relates to a heat treatment device for processing large-sized substrates such as LCD substrates by heating. LCD), a circuit pattern is formed by a so-called light lithography technique, in which a photoresist liquid is applied to a glass LCD substrate to form a blocking film thereon, and then the blocking film is exposed according to the circuit pattern and then developed. More specifically, the LCD substrate is cleaned in a cleaning device and then adhered in an adhesive device, and a photoresist film is coated on the surface of the LCD substrate in a coating prevention device. Then, the photoresist film is heated and baked in a thermal processing device, and the substrate is exposed to a predetermined pattern of light in an exposure device. The exposed LC substrate is then applied with a developer and developed in a developing device, and the developer is washed with a cleaning liquid to complete a developing process. The heat treatment device used to heat the LCD substrate in the above development process includes a hot plate on which the LCD substrate is placed, a heater for heating the LCD substrate through the hot plate, a vent cover arranged to define a processing space to fit the hot plate, and It has an air vent in the center of the ceiling and a shutter to close the processing space. Nowadays, the demand for LCD substrate expansion is gradually increasing, and there is an urgent need for a large-size substrate larger than the conventional substrate of 840x6 and 50mm of 65x55mm. However, when such a large-sized LCD substrate is subjected to the above-mentioned heat treatment, the processing temperature in the surface of the L CD substrate tends to become uneven. For example, the larger the size of the LCD substrate, the larger the temperature difference between the center and peripheral portions of the LCD substrate. (Please read the notes on the back before filling in this page) Order IX. _ This paper size applies the Chinese National Standard (CNS) A4 Zhuge (210 X 297 mm) · 4 _ 413832 a? _B7 V. Description of the invention (2 Therefore, when processing large-size LCD substrates, it is necessary to more strictly control the factors that affect the processing temperature in the heat treatment device. The change in the temperature distribution of the LC substrate may be caused by various factors, one of which is the radiation of heat from a hot plate. In particular, the bottom and sides of the hot plate are exposed to the air in the processing space, and therefore, heat is easily radiated from this, causing a temperature difference between the central and peripheral portions of the hot plate. Such a difference in the temperature of the hot plate causes a difference in temperature between the center and peripheral portions of the LCD substrate, thereby reducing the thermal uniformity on the surface of the LCD substrate. During the heat treatment, the ventilation of the processing space is also a factor of the temperature difference. In the aforementioned baking process, the photoresist film formed on the LCD substrate is heated, and the solvent in the photoresist film is evaporated by heat. The solvent is removed from the processing space, and air is exhausted through a vent hole in the vent cover. The air flow caused by ventilation reduces the temperature of the L CD substrate or the outside of the hot plate, and this temperature drop, or turbulence, will cause a temperature difference between the center and peripheral portions of the LCD substrate or the hot plate. Printed by the Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative (please read the precautions on the back, and then fill out this page) The hot plate that is used is formed by casting, and the heater is installed in it. Due to the recent trend of large-size LCD substrates, it is necessary to make the hot plate have a higher response to heat, and smaller thickness and light weight. However, the thickness of the cast-type hot plate can only be reduced to 40 mm due to the limitation of its manufacturing method, and the cast-type hot plate has disadvantages such as poor response to heat, difficulty in reducing weight, and increasing the height of the device. SUMMARY OF THE INVENTION The object of the present invention is to provide a heat treatment device that can apply the Chinese National Standard (CNS) A4 Zhuge (210X297 mm) to the paper size at the hot place. -5- 413832 5. Description of the invention (3) In the surface of the object, the uniformity of the processing temperature is improved, even if the size of the object is quite large. According to a first aspect of the present invention, there is provided a heat treatment apparatus including: a housing: a hot plate is arranged inside the housing to heat an object disposed on the hot plate; a heater is used to heat the hot plate; and A reflecting plate is used to reflect the heat radiated from the hot plate, wherein the bottom portion of the reflecting plate faces the lower side of the hot plate, and the side wall portion faces the relevant side of the hot plate. According to a second aspect of the present invention, there is provided a heat treatment device including: a housing; a hot plate arranged inside the housing to heat an object disposed on the hot plate; and a heater for heating the hot plate Heating; and an outer frame is arranged on the hot plate part of the object to surround the object "printed by Zhengong Consumer Cooperative Cooperative Standard (please read the precautions on the back before filling this page) according to the present invention In a third aspect, a heat treatment device is provided, including: a casing; a hot plate is arranged inside the casing to heat an object disposed on the hot plate: a heater is used to heat the hot plate: a vent cover Arranged above the hot plate, a processing space is defined therebetween, and the vent cover has a vent hole; and a shutter is arranged to surround the processing space and can be moved toward or away from the radon vent, wherein during the heat treatment, it is between the vent cover The gap between the shutter and the shutter is set to a value so that when the processing space is ventilated through the vent hole, the air flow along the side surface of the hot plate is subjected to the air flow introduced into the processing space through the gap. Suppression, so as to reduce a temperature change of the hot plate. According to a fourth aspect of the present invention, there is provided a heat treatment device including: a casing; a hot plate arranged inside the casing to heat an object disposed on the hot plate; a heater for heating the hot plate: The reflecting plate is used to reflect the heat radiated by the hot plate; the paper size of an outer frame arranged on the hot plate where the object is set is applicable to the Chinese National Standard (CNS) A4 Zhuge (210X297 mm) _β_ Industrial and consumer cooperatives printed 4138¾ ^ _Βτ__ 5. The description of the invention (4) partly surrounds the object: a ventilation cover is arranged above the hot plate, and a processing space is defined between the ventilation cover, and the ventilation cover has ventilation holes; and The shutter is arranged to surround the processing space and can move toward or away from the air vent, wherein the bottom portion of the reflecting plate faces the lower side of the hot plate, and the side wall portion faces the relevant side of the hot plate, and is heated During the treatment, the gap between the vent cover and the shutter is set to be one, so that when the processing space is ventilated through the vent hole, the air flow along the side surface of the hot plate is subjected to the introduction into the processing space through the gap. Inhibition of gas flow, so as to reduce a temperature change of the hot plate. According to a fifth aspect of the present invention, there is provided a heat treatment device including: a housing; a hot plate arranged inside the housing to heat an object disposed on the hot plate; and a heater for heating the hot plate , Wherein the heater is press-fitted in a recess formed in the hot plate. According to a first aspect of the present invention, the reflecting plate is configured to reflect radiant heat from the hot plate, whereby the heat radiated from the hot plate can be reflected to the hot plate. The bottom portion of the reflecting plate faces the lower side of the hot plate and the side wall portion faces the relevant side of the hot plate. Since the reflecting plate is arranged at a position related to the area of the hot plate with more heat radiation, the radiant heat can be reflected to this area, and therefore, the thermal uniformity of the hot plate can be enhanced. According to the second aspect of the present invention, an outer frame arrangement On the part where the hot plate of the object is arranged to surround the object, the entry of air in the area around the object can be suppressed. As a result, turbulence can be suppressed and the uniformity of the processing temperature within the surface of the object can be enhanced. According to the third aspect of the present invention, during the heat treatment, the processing space is vented in a semi-closed state, where the shutter is kept close to the vent cover, and the paper size is applicable to the Chinese National Standard (CNS) Λ4 specification (2 丨 0X297 Mm) ^ ο Pack 1 (Please read the precautions on the back before filling this page) Order-413832 A7 B7 V. Description of the invention (5) Therefore, the processing space is not completely closed due to the gap between the vent cover and the shutter . In this example, two air flows are generated due to the aeration, that is, the air flow introduced into the processing space through the gap and the upward air flow along the side of the hot plate. In these two air flows, if the air flow along the side of the hot plate is large, too much heat will be removed from the side of the hot plate, and thus the thermal uniformity of the hot plate is lost. Therefore, the gap between the vent cover and the shutter is set to be one so that the air flow along the side surface of the hot plate is suppressed by the air flow introduced into the processing space through the gap, thereby reducing the temperature change of the hot plate. As a result, heat removal from the side surface of the hot plate is suppressed, and the heat uniformity of the hot plate can be improved. Printed in accordance with the fourth aspect of the present invention by the Xinyang Procurement Bureau of the Ministry of Economic Affairs, a reflective plate is used to reflect the heat radiated by the hot plate (first aspect of the present invention), and an outer frame is arranged on the object to be set The part of the hot plate surrounds the object (the second aspect of the present invention), and the gap between the vent cover and the shutter is set to a value during heat treatment, so that when the processing space is ventilated through the vent hole, The air flow along the side surface of the hot plate is suppressed by the air flow introduced into the processing space through the gap, thereby reducing the temperature change of the hot plate (third aspect of the present invention). Due to the multiple effects of these technical features, the thermal uniformity of the hot plate can be significantly improved. According to a fifth aspect of the present invention, since the heater is press-fitted into a recess formed in the hot plate, it is different from the conventional mold hot plate in that it does not need to increase the thickness of the hot plate. Therefore, compared with the conventional hot plate, the thickness of the hot plate of the present invention can be thinner. Therefore, the hot plate of the present invention has a higher rate of response to heat, has a lighter weight, and can further suppress turbulence. Other objects and advantages of the present invention will be described in the following description-presenting -8- (read the note on the back first and then fill out this page) This paper size is applicable to China Standards (CNS) A4 (210X297 (Mm) A7 B7 Printed by the Central Standards Bureau of the Ministry of Economic Affairs, M Industrial Consumer Cooperative, 413833 V. Description of the invention (6), part of which can be learned from the description, or can be learned from the implementation of the invention. The objects and advantages of the present invention can be obtained by the facilities and combinations thereof specifically mentioned below. BRIEF DESCRIPTION OF THE DRAWINGS The drawings arranged here and constituting a part of the description present a presently preferred embodiment of the present invention, which together with the above general description and the following detailed description of the preferred embodiment are used to explain the present invention. Principle of the invention "Fig. 1 is an unplanned plan view of a coating and developing system for an LCD substrate to which the present invention is applied; Fig. 2 is a cross-sectional view of a heat treatment apparatus according to an embodiment of the present invention, which is installed in the system of Fig. 1 Figures 3 A and 3 B are sectional views of the state before and after the heater is press-fitted on a hot plate; Figure 4 is a sectional perspective view of the hot plate of the heat treatment device of Figure 2: Figure 5 is a shutter of the heat treatment device of Figure 2 Perspective view: Fig. 6 is a sectional view of a shutter raising mechanism used in the heat treatment device of Fig. 2, and Fig. 7 is a sectional view of a state of the shutter of the heat treatment device of Fig. 2 during heat treatment; Figure 2 is a sectional view of another state of the shutter of the heat treatment device of FIG. 2: 'FIG. 9 is a flowchart of the processing performed by the heat treatment device of FIG. 2: FIG. 10 is used to adjust the gap between the vent cover and the shutter Opportunity The, 1 'V' - < Please Note between the back surface of the read page and then fill)
本紙張尺度適用中國國家揉準(CNS ) Α4^格(210Χ297公釐) -9- 經濟部中央標準局貝工消费合作社印裝 413832 A7 _B7五、發明説明(7 ) 修改例之截面圖;和 圖11爲反射板之修改例之立體圖。 主要元件對照表 1 匣台 2 處理部份 3 介面部份 10 傳送機構 11 傳送臂 2 a 前級部份 2b 中級部份 / 2 c 後級部份 1 2,1 3,1 4 傳送路徑 1 5,1 6 繼電器部份 2 1 a,2 1 b 淸潔單元 25 紫外線輻射/冷卻單元 26 熱處理單元 2 7 冷卻單元 17*18 主傳送裝置 22 阻止塗層單元 23 週邊阻止移除單元 28 熱處理單元 29 加熱/冷卻單元 30 黏著/冷卻單元 本紙張尺度適用中國國家揉準(CNS ) A4祝格(210X297公釐) _ 1〇 · ---------裝---- (諳先鬩讀背面之注意事項再填寫本頁) 訂 >.This paper size applies to the Chinese National Standard (CNS) Α4 ^ grid (210 × 297 mm) -9- Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, 413832 A7 _B7 V. Cross-section drawing of the modified description of the invention (7); and FIG. 11 is a perspective view of a modified example of the reflecting plate. Comparison table of main components 1 Box 2 Processing part 3 Interface part 10 Transmission mechanism 11 Transmission arm 2 a Pre-stage part 2b Intermediate part / 2 c Back-stage part 1 2, 1 3, 1 4 Transmission path 1 5 1 6 Relay part 2 1 a, 2 1 b Cleaning unit 25 UV radiation / cooling unit 26 Heat treatment unit 2 7 Cooling unit 17 * 18 Main conveyor 22 Block coating unit 23 Perimeter block removal unit 28 Heat treatment unit 29 Heating / Cooling Unit 30 Adhesive / Cooling Unit This paper size is applicable to the Chinese National Standard (CNS) A4 Zhuge (210X297 mm) _ 1〇 · --------- 装 ---- (谙 先 阋(Read the notes on the back and fill out this page) Order >.
S 經濟部4-央標準局貝工消费合作社印製 413832 A7 B7 五、發明説明(8 ) 19 主傳送裝置 24a,24b,24c 顯影單元 31 熱處理單元 {請先閲讀背面之注意事項再填寫本頁)S Printed by the Ministry of Economic Affairs 4- Central Standards Bureau Shellfish Consumer Cooperative 413832 A7 B7 V. Description of the invention (8) 19 Main conveying device 24a, 24b, 24c Developing unit 31 Heat treatment unit {Please read the precautions on the back before filling this page )
3 2, 33 加熱/冷卻單元 1 7 a ,1 8 a,1 9 a 臂 3 4 化學饋送單元 3 5 間隔器 3 7 緩衝級 3 8 傳送機構 3 9 傳送臂 3 6 延伸體 4 1 殼 4 2 熱板 5 1 通氣蓋 5 0 處理空間 6 0 快門 5 2 通氣孔 4 la ,4 1 b 開口 4 3 加熱器 4 4 支持銷 4 5 保挣構件 7 0 反射板 7 3 基礎構件 7 2 外側框 本紙張尺度適用中國國家標準(CNS ) A4祝格(210X297公釐) · 11 _ 413832 A7 B7 五、發明説明(9 ) 6 1 托架 62 引導構件 6 3 汽缸 6 4 活塞桿 6 5 阻止器 9 0 突出部 本發明之詳細說明 以下參考附圖詳細說明本發明之實施例。 圖1爲應用本發明之用於L C D基底之塗覆顯影系統之 平面圖* 經濟部中央標準局®:工消費合作社印製 此塗覆顯影系統包含一匣台1,其上設置含有多數基底 G之匣C,一處理部份2包括多數之處理單元以使基底G 受到包括阻止塗覆和顯影等一序列處理,和一介面部份3 用以傳送基底G至或由曝光裝置(未顯示)而來。匣台1 具有傳送機構10用以傳送LCD基底在每個匣C間,而 後傳送至或由匣台1和處理部份2而來。傳送機構10包 括一傳送臂1 1,其在延伸於匣C之列方向上之傳送路徑 1 0 a上移動,和每個基底G以傳送臂1 1在匣C和處理 部份2間傳送。 處理部份2分成前級部份2 a,中級部份2b,和後級 部份2c,其分別具有傳送路徑12,13, 14於中央 ,和各種處理單元安排在傳送路徑之兩側上.。繼電器部份 1 5和1 6安排在三個傳送路徑之相關雨接面間= -12- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS ) A4祝格(210X297公釐) 413832 a? B7 五、發明説明(1〇 ) 前級部份2 a具有主傳送裝置17沿傳送路徑1 2移 動。兩淸潔單元(S CR) 2 1 a和2 1 b安排在傳送路 徑1 2之一側,而具有紫外線輻射裝置(UV)和位於其 上之冷卻裝置(C O L )之紫外線輻射/冷卻單元2 5, 具有兩熱處理裝置(HP )逐一設置之熱處理單元26, 和.具有兩冷卻裝置(C 0L )逐一設置之冷卻單元2 7乃 安排在傳送路徑1 2之另一側· 中級部份2 b亦相似的具有主傳送裝置1 8沿傳送路 徑13移動。一阻止塗層單元(CT) 22和一周邊阻止 移除單元(E R )用以移除在基底G之周邊部份上之阻止 物以互相整合的方式安排在傳送路徑13之一側。具有兩 熱處理裝置(HP)逐一設置之熱處理單元2 8 ,具有熱 處理裝置(HP)和位於其上之冷卻裝置(COL)之熱 處理/冷卻單元2 9 ,和具有黏著裝置( AD)和冷卻裝 置(COL)逐一設置之黏著/冷卻單元3 0乃安排在傳 送路徑13之另一側。 後級部份2 c亦具有主傳送裝置1 9沿傳送路徑1 4 移動。三個顯影單元(DEV) 24a, 24b,和 2 4 c安排在傳送哮徑1 4之一側,而具有兩熱處理裝置 (HP )逐一設置之熱處理單元3 1 ,具有熱處理裝置( HP)和位於其上之冷卻裝置(COL)之兩熱處理/冷 卻單元3 2和3 3乃安排在傳送路徑14之男一側。 主傳送裝置17, 1 8,和19具有X和Y軸驅動機構 以使其在水平面上在兩方向移動,Z軸驅動機構以在垂直 --------^ 袭--- (請先閲讀背面之注意事項再填寫本頁)3 2, 33 heating / cooling unit 1 7 a, 1 8 a, 1 9 a arm 3 4 chemical feed unit 3 5 spacer 3 7 buffer stage 3 8 transfer mechanism 3 9 transfer arm 3 6 extension 4 1 shell 4 2 Hot plate 5 1 Vent cover 5 0 Processing space 6 0 Shutter 5 2 Vent hole 4 la, 4 1 b Opening 4 3 Heater 4 4 Support pin 4 5 Guaranteed member 7 0 Reflective plate 7 3 Base member 7 2 Outside frame Paper size applies Chinese National Standard (CNS) A4 Zhuge (210X297 mm) · 11 _ 413832 A7 B7 V. Description of the invention (9) 6 1 Bracket 62 Guide member 6 3 Cylinder 6 4 Piston rod 6 5 Stopper 9 0 Detailed Description of the Invention The present invention will be described in detail below with reference to the accompanying drawings. Fig. 1 is a plan view of a coating and developing system for an LCD substrate to which the present invention is applied. * Printed by the Central Bureau of Standards of the Ministry of Economic Affairs: Industrial and Commercial Cooperatives. This coating and developing system includes a cassette table 1 on which a substrate containing a large number of substrates G is disposed. Box C, a processing section 2 including a plurality of processing units to subject the substrate G to a sequence of processing including blocking coating and development, and an interface section 3 for transferring the substrate G to or from an exposure device (not shown) and Come. The cassette table 1 has a transfer mechanism 10 for transferring the LCD substrate between each cassette C, and then to or from the cassette table 1 and the processing section 2. The transfer mechanism 10 includes a transfer arm 11 which moves on a transfer path 10 a extending in the direction of the box C, and each substrate G transfers between the box C and the processing section 2 with the transfer arm 11. The processing section 2 is divided into a pre-stage section 2 a, an intermediate section 2 b, and a post-stage section 2 c, which have transmission paths 12, 13, 14 at the center, and various processing units arranged on both sides of the transmission path. . The relay parts 1 5 and 16 are arranged between the relevant rain joints of the three transmission paths = -12- (Please read the precautions on the back before filling this page) This paper size applies to the Chinese National Standard (CNS) A4 (210X297 mm) 413832 a? B7 V. Description of the invention (10) The former part 2a has a main conveying device 17 to move along the conveying path 12. Two cleaning units (S CR) 2 1 a and 2 1 b are arranged on one side of the conveying path 12, and the ultraviolet radiation / cooling unit 2 has an ultraviolet radiation device (UV) and a cooling device (COL) located thereon. 5. The heat treatment unit 26 with two heat treatment devices (HP) arranged one by one, and the cooling unit 2 with two cooling devices (C0L) arranged one by one 7 are arranged on the other side of the conveying path 1 2 · intermediate section 2 b It is also similar that the main transfer device 18 is moved along the transfer path 13. A blocking coating unit (CT) 22 and a peripheral blocking removing unit (ER) are used to remove blocking on the peripheral portion of the substrate G in a mutually integrated manner on one side of the conveying path 13. A heat treatment unit 2 8 having two heat treatment units (HP) provided one by one, a heat treatment / cooling unit 2 9 having a heat treatment unit (HP) and a cooling unit (COL) located thereon, and an adhesion unit (AD) and a cooling unit ( (COL) Adhesive / cooling units 30 arranged one by one are arranged on the other side of the conveying path 13. The post-stage part 2c also has a main transfer device 19 that moves along the transfer path 14. Three developing units (DEV) 24a, 24b, and 2 4 c are arranged on one side of the conveying path 14 and a heat treatment unit 3 1 having two heat treatment devices (HP) is provided one by one, and the heat treatment device (HP) and The two heat treatment / cooling units 3 2 and 3 3 of the cooling device (COL) thereon are arranged on the male side of the conveying path 14. The main conveyors 17, 18, and 19 have X- and Y-axis drive mechanisms to move them in two directions on a horizontal plane, and Z-axis drive mechanisms to move vertically -------- ^ Attack --- (Please (Read the notes on the back before filling out this page)
JJ .,ΤΓ' 經濟部中央標準局Μ;工消費合作社印装 本紙伕尺度通用中國躅家標準(CNS > A4规格(210X297公釐) · 13 - 經濟部中央標準局貝工消费合作社印製 413832 g_ 五、發明説明(11 ) 方向移動,和一轉動驅動機構以使其繞著z軸轉動,且亦 包括臂17 a, 18a,和19a以分別支持基底G。 處理部份2具有一構造以使只有旋轉型單元,如淸潔單 元2 1 a,阻止塗層單元2 2和顯影單元2 4 a安排在傳 送路徑之一側,而只有熱相關處理單元,如熱處理單元, 和冷卻單元等安排在傳送路徑之另一側。 在當成旋轉型單元之繼電器部份.1 5和1 6之相同側上 ,安排有化學饋送單元3 4 ,和提供空間3 5以允許維修 0 介面部份3包括一延伸3 6以在傳送基底至或由處理部 份2時暫時的保持基底,兩緩衝級3 7安排在延伸之兩側 以使緩衝匣置於其上,和一傳送機構38用以在曝光裝置 (未顯示)和緩衝匣間傳送基底G »傳送機構3 8具有一 傳送臂3 9在沿著安排有延伸3 6和緩衝級3 7之方向延 伸之傳送路徑3 8 a上移動,和基底G以傳送臂3 9而在 處理部份2和曝光裝置間傳送。 藉由以此方式集合的安排處理單元整合成一體,可節省 空間和增強處理效率》 在以上述方式構成之塗覆顯影系統中,在匣C中之基底 G傳送至處理部份2。在處理部份2中,基底首先受到在 前級部份2 a中之紫外線輻射/冷卻單元2 5之紫外線輻 射裝置(UV)之表面修改淸潔處理,而後受到在相同單 元之冷卻裝置(C ◦ L )之冷卻。在基底受到在淸潔單元 (S CR) 2 1 a和2 1 b中之擦洗淸·潔後,其在安排在 本紙張尺度適用中國國家標準(CNS ) A4祝格(210X29?公釐) -14 - {請先閱讀背面之注意Ϋ項再填寫本頁)JJ., ΤΓ 'Central Standards Bureau of the Ministry of Economic Affairs M; Common Paper Standards (CNS > A4 size (210X297 mm)) for printed paper sizes of industrial and consumer cooperatives · 13-Printed by the Central Industrial Standards Bureau of the Ministry of Economic Affairs 413832 g_ 5. Description of the invention (11), and a rotation driving mechanism to rotate around the z-axis, and also includes arms 17 a, 18a, and 19a to support the substrate G. The processing part 2 has a structure So that only the rotation type unit, such as the cleaning unit 21a, the blocking coating unit 22 and the developing unit 24a are arranged on one side of the conveying path, and only the heat-related processing unit such as the heat treatment unit, the cooling unit, etc. Arranged on the other side of the transmission path. On the same side as the relay unit of the rotary unit. 1 5 and 16 are arranged a chemical feed unit 3 4, and provide space 3 5 to allow maintenance 0 interface part 3 It includes an extension 36 to temporarily hold the substrate while the substrate is being transferred to or from the processing section 2, two buffer stages 37 are arranged on both sides of the extension to place the buffer box thereon, and a transfer mechanism 38 is used to Exposure device (not shown) and The transfer substrate G between the cassettes »The transfer mechanism 3 8 has a transfer arm 3 9 moving along a transfer path 3 8 a extending in the direction in which the extension 36 and the buffer stage 37 are arranged, and the substrate G uses the transfer arm 3 9 And it is transferred between the processing section 2 and the exposure device. By arranging the processing units integrated in this way, space can be saved and processing efficiency can be enhanced. "In the coating and developing system constructed as described above, in the cassette C The substrate G is transferred to the processing section 2. In the processing section 2, the substrate is first subjected to a surface modification cleaning treatment by the ultraviolet radiation device (UV) of the ultraviolet radiation / cooling unit 25 in the previous section 2a, Then it is cooled by the cooling device (C ◦ L) in the same unit. After the substrate is scrubbed and cleaned in the cleaning unit (S CR) 2 1 a and 2 1 b, it is arranged in this paper. Chinese National Standard (CNS) A4 Zhuge (210X29? Mm) -14-{Please read the note on the back before filling this page)
A7 B7 413832 五、發明説明(12 ) 前級部份2 a中之熱處理裝置(HP )之一中受熱和乾燥 ,而後在冷卻單元2 7之冷卻裝置(COL )之一中冷卻 (請先閱讀背面之注意事項再填寫本頁) 9 而後,基底G傳送至中級部份2b,其中其受到位於單 元3 0之上位準上之黏著裝置(AD )之黏著處理( HMDS處理),以增強欲形成之阻止物之黏著,而後受 到在相同單元之下位準之冷卻裝置.(C 0 L )之冷卻。在 基底受施加以在阻止塗層單元(CT)中之阻止物後,在 基底之周緣部份上之過多阻止物在周緣阻止物移除單元( ER)23中移除。基底G而後受到安排在中級部毋2b 中之熱處理裝置(HP)之一之預先烘烤處理,而後在位 於單元2 9和3 0之下位準上之冷卻裝置(COL)中冷 卻。 經濟部中央搮率.局貝工消費合作社印製 而後,基底G以主傳送裝置19由繼電器部份16傳送 至介面部份3,而後至曝光裝置以對預定圖樣之光曝光。 而後,基底再度經由介面3傳送至系統,且在依需要的在 後級部份2 c中之一熱處理裝置(HP)中在基底上執行 後曝光烘烤處理後,基底受到在顯影單元(DEV) 24a, 24b,和24c之一中之顯影處理以形成預定 電路圖樣於其上。因而已顯影之基底G在後級部份2 c之 熱處理裝置(Η P )之一中受到後烘烤處理,而後在冷卻 裝置(COL)中冷卻,並由主傳送裝置1 9 , .1 8,和 1 7和傳送機構1 0傳送至在匣台1上之預.定匣。 以下採用安排在中級部份2 b當成範例說明安裝在上 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) _ 15 - 經濟部中央標準局員工消费合作社印製 413832 A7 ____B7____ 五、發明説明(13 ) 述塗覆顯影系統中之熱處理裝置(HP )。 如圖2所示,熱處理裝置(HP)包含一外殼41,用 以加熱位於外殼4 1內側之基底G之熱板4 2,通氣蓋 5 1以覆蓋外殼4 1之上部份並界定配合熱板4 1之處理 空間5 0,和一快門60圍繞處理空趵50和移向或遠離 通氣蓋5 1。通氣孔52形成在通氣.蓋5 1之天花板之中 央。 外殼4 1具有一開口 4 1 a對著傳送路徑13開口,和 一基底G以主傳送裝置1 8之傳送臂1 8 a經由開口 4 1 a傳送。相似的開口 4 1 b形成在外载上相對於開口 4 1 a之位置,且這些開口 4 1 a和4 1 b作用當成空氣 入口。安排在外殻相對側之空氣入口用以降低介於基底入 口/出口側和相對於此之側間之氣流率之差異,且因此可 降低介於冷卻熱板4 2之基底入口/出口側之氣流率和冷 卻相反側之氣流率間之差異,藉以使在熱板上方之區域之 溫度分佈均勻。結果,在預先烘烤處理之例中,可改善阻 止膜之厚度均勻性。所形成之空間入口並不限於兩個,而 亦可爲四個。 熱板4 2以例如鋁合金製成,且具有約3 0mm之厚度 。用以加熱熱板4 2之加熱器4 3安排在熱板4 2之反側 或下側。加熱器4 3爲管型式且壓裝在形成在熱板4 2之 下側42d中之多數凹陷42a中,如圖3Α所示。因此 ,加熱器嵌合在熱板42中,如圖3B所示。 熱板4 2進一步具有一溫度感應器(未顯示),而該處 本紙張尺度適用中®國家標準(CNS ) A4祝格(210X29?公釐) -16: ----^------r J^.— . - v_ (請先閱讀背面之注意事項再填寫本頁) 訂 i 413832 a7 B7 _ 五、發明説明(14) 理溫度饋至一控制部份(未顯示),因此其可設定在例如 12 0至15 o°c之預定處理溫度。 熱板4 2上具有四個通孔4 2 b。用以在傳送時支持基 底G之支持銷4 4經由相關的通孔4 2 b插入。支持銷 4 4以安排在熱板4 2下方之保持構件4 5保持。保持構 件4 5耦合至升起機構(未顯示),因此保持構件4 5以 升起機構上下移動,且支持銷44可突出或由縮回熱板 4 2之表面4 2 c下方》 基底G可置於熱板42上;替代的,其亦可爲近接型以 由支持銷4 4或間隔器(未顯示)保持在熱板4 2上方之 位置,以使不和熱板直接接觸。 用以反射來自熱板4 2之輻射熱之反射板7 0安排在外 殻4 1內。如圖4所示,反射板70具有以預定距離面對 熱板4 2之下側4 2 d之底部份7 0 a ,和以預定距離面 對熱板4 2之相關側面4 2 e之側壁部份7 0 b = 經濟部中央樣準局貝工消费合作社印装 (請先閲讀背面之注意事項再填寫本頁) 如圖2所示,反射板7 0設置在設定在外殻4 1之底部 上之基礎構件73上。再者,如圖4听示,熱板42設置 在反射板7 0之底部份7 0 a上,其間安插有間隔器7 1 ,因此,熱板42和反射板7 0之底部份7 0 a分離。 介於熱板4 2和反射板7 0間之距離並未特別限制,但 是最好設定爲使熱板4 2之熱均勻程度最高之適當値。 —外側框7 2安排在熱板4 2之表面4 2 c上,以以一 小間隙圍繞基底G。外Μ框7 2之高度並無特別限制,只 要其爲高於基底G之表面之位準,且設定爲例如5mm。 本紙浪尺度適用中國國家標準(CNS > A4規格(210X297公釐) .-J7 - 413832 A7 B7 五、發明説明(15 ) 如圖5所示,快門6 0具有一矩形體6 0 a和一水平部 份6 0 b由矩形體之上端連續且由此延伸出。水平部份 6 0 b使空氣由外界沿通氣蓋5 1之下表面導入,藉以避 免空氣流向基底G »結果,在基底G之表面內之溫度分佈 可保持平坦,藉以增強阻止膜之厚度均勻性。. 托架6 1由矩形體6 0 a之相對下端之相關中央突出》 如圖6所示,托架61由設定在外殼41之底部上之引導 構件6 2垂直移動的保持。特別的,每個托架6 1耦合至 當成升起機構之汽缸6 3之活塞桿6 4,因此,當汽缸受 驅動時,其可上下移動*因此,快門60可由汽缸63上 下移動以移向或離開通氣孔51。 阻止器6 5接附至每個引導構件6 2之上端部份。當托 架6 1上升時,阻止器6 5嵌合托架6 1,以停止快門 6 0在預定位置上。快門6 0之最上方停止位置設定爲可 在介於快門6 0和通氣蓋5 1間提供間隙D之位準,如圖 7所示。 經濟部中央標準局舅工消費合作社印裂 在熱處理時,快門6 0上升至最上位置,因此處理空間 50可在半關閉狀態下通氣,其中因爲介於快門60和通 氣蓋5 1間之間隙D,空間5 0未完全關閉。在此例中, 由於通氣之結果,會產生兩空氣流,如圖7所示,亦即經 由間隙D導入處理空間5 0之氣流(以下稱爲介於快門 6 0和通氣蓋5 1間提供間隙D之位準)和沿熱街4 2之 側面4 2 e之氣流(以下稱爲側氣流Β )。 在兩氣流中,如果側氣流B太大,熱會由熱板42之側 -18- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS > A4祝格(2Ϊ0Χ297公釐) 經濟部中央標準局貝工消費合作社印輦 413832 ^ 五、發明説明(16 ) 面42e過度的移除,且因此,介於熱板42之中央和周 邊部份間之溫度差異變大,如果損害了熱均勻性。結果, 在基底G之表面內之處理溫度之均勻性變低》 如上所述,供應氣流A和側氣流B由通氣所產生,因此 ,如果處理空間以固定速率通氣時,兩氣流間具有之關係 爲當供應氣流A增加時,側氣流B降低;相反的,當供應 氣流A降低時,側氣流B增加。 由於供應氣流A之流速可藉由改變介於快門6 0和通氣 蓋5 1間之間隙D而改變,因此設定間隙D以增加相關於 側氣流B之供應氣流A ,並藉由供應氣流A以限制側氣流 B,因此在熱板42內之溫度差異較小。特別的,此間隙 可設定爲1 5至2 Omm。 通氣孔5 2連接至通氣機構(未顯示),藉此,在處理 空間5 0中之空氣可釋放至外界》 如圖7所示,快門6 0之水平部份6 0 b之內緣延伸至 熱板42之周緣附近之位置,且因此,當快門60向下移 動時,來自熱板42之底部之向上空氣流受到阻擋,藉此 ,可使熱板4 2免於受到冷卻。如圖8所示:藉由使水平 部份6 O b之內緣部份重疊熱板4 2之周緣部份可進一步 增強此效果。 參考圖9,以下說明上述之熱處理裝置(HP )之加熱 .處理。 首先,快門6 0向下移動(步驟1),而銷44受到舉 起(步驟2)。而後基底G以傳送臂18 a送入殼4 1 ( )裝— (请先閲請背面之注意事項再填寫本頁) 訂 本纸張尺度適用中國國家標準(CNS > A4祝格(210X297公釐) -19 - 經濟部中央標準局员工消费合作社印装 413832 A7 B7 五、發明説明(17 ) 步驟3)並置於銷44上(步驟4)。而後,降低銷44 且同時傳送臂18 a縮回(步驟5 ) >而後,開始加熱處 理,且在加熱處理開始後,快門6 0向上移動(步驟6) 〇 在基底以熱處理一段預定時間後,快門6 0向下移動( 步驟7),而後銷4 4向上移動以舉起基底G (步驟8) ,藉以完成加熱處理。 而後,當基底G舉起時,傳送臂〗8 a延伸至在基底G 下方之位置(步驟9)而後向上移動,藉此基底G可由臂 18 a所接收(步驟10)。而後,基底G以傳送臂 1 8 a傳送至外側(步驟1 1 ),而後快門6 0向上移動 (步驟1 2 ) » 於此提供用以反射來自熱板4 2之輻射熱之反射板7 0 ,且因此,在基底G上執行加熱處理時,輻射熱由反射板 反射向著熱板4 2。由於反射板7 0以一距離面對熱板_ 4 2之下側4 2 d和側面4 2 e,熱可反射向著下側 4 2 d和側面4 2 e,藉此可輻射更多的熱。因此可抑制 熱板42之局部溫度降低,特別是熱板42之周邊部份之 溫度降低,結果,可增強熱板42之熱均勻性。 反射板7 0之側壁部份7 0 b和熱板4 2之側面4 2 e 最好設置成它們互相部份的重疊,如圖4所示,以使熱由 熱板4 2之側面4 2 e適當的輻射。互相重叠部毋之高度 (以下稱爲重疊高度H)設定爲熱板4 2之厚度(如3 0 mm)之1/3至1/2 (如15mm.) ^如果重疊高度 (請先閎讀背面之注$項再填寫本頁) 訂 本紙張尺度適用中國國家標準(CNS >八4说格(210X297公釐} _ 2〇 - A7 B7 經濟部中央標準局負工消費合作社印製 413832 五、發明説明(18 ) Η太大,熱板42之周邊部份之溫度會因爲由熱板42而 來之輻.射熱而變成特別高,因此,會喪失熱板4 2之熱均 勻性。 熱處理裝置(HP)提供有外側框7 2在熱板4 2之表 面4 2 c上以環繞基底G,且此外側框7 2可防止空氣進 入環繞基底G之區域。因此,環繞基底G之區域之溫度會 因爲通風而產生之空氣流,亦即,由於擾流,而免於降低 ,因此,可改善基底G之表面內之處理溫度之均勻性》 在熱處理下,當快門6 0移動至其最上位置時,形成在 通氣蓋5 1和熱處理裝置(HP )之快門6 0間之間隙D 乃設定以使側空氣流B由供應空氣流A抑制,藉以降低在 熱板42內之溫度差異,藉此,可防止由快速側空氣流B 所引起之熱板42之側面42e之突然熱移除,且因此, 可降低介於熱板4 2之中央和周邊部份間之溫度差異。因 此,可增強熱板4熱均勻性,結果,可改善基底G之 表面內之處理溫度之均勻性、爲了達成遣些有益之效果, 介於通氣蓋5 1和快門6 0間之間隙設定爲15至2 0 mm ° 在上述之熱處理中,快門60移動向下,而後銷44向 上移動以舉起基底(步驟7和8),藉以避免基底G受到 以高流率直接衝擊基底G之空氣之局部冷卻此種局部冷 卻之發生乃是因爲當通風之空氣量相同時,空氣之流率較 高,且當快門60上升時比當快門60降低時,空氣流更 局部化。在完成熱處理後,快門60在步驟12上向上移 (請先閱讀背面之注$項再填寫本頁)A7 B7 413832 V. Description of the invention (12) One of the heat treatment devices (HP) in the previous part 2a is heated and dried, and then cooled in one of the cooling devices (COL) of the cooling unit 27 (please read first Note on the back page, please fill out this page again) 9 Then, the substrate G is transferred to the intermediate part 2b, where it is subjected to the adhesion treatment (HMDS treatment) by the adhesion device (AD) located on the level above the unit 30 to enhance the formation The blocking of the object is then cooled by a cooling device (C 0 L) at a level below the same unit. After the substrate is applied to prevent the stopper in the coating unit (CT), the excessive stopper on the peripheral portion of the substrate is removed in the peripheral stopper removal unit (ER) 23. The substrate G is then pre-baked by one of the heat treatment devices (HP) arranged in the intermediate section 2b, and then cooled in a cooling device (COL) at a level below the cells 29 and 30. Printed by the Central Government Bureau of the Ministry of Economic Affairs, Bureau Coconut Consumer Cooperative, and then the substrate G is transferred by the main transfer device 19 from the relay portion 16 to the interface portion 3, and then to the exposure device to expose the light of the predetermined pattern. Then, the substrate is transferred to the system through the interface 3 again, and after performing post-exposure baking processing on the substrate in a heat treatment device (HP) in one of the post-stage parts 2 c as required, the substrate is subjected to a developing unit (DEV A developing process in one of 24a, 24b, and 24c to form a predetermined circuit pattern thereon. Therefore, the developed substrate G is subjected to a post-baking treatment in one of the heat treatment devices (Η P) of the subsequent stage portion 2 c, and then cooled in a cooling device (COL), and is transported by the main conveying device 19, .18. , And 17 and the transfer mechanism 10 transfer to the predetermined cassette on the cassette table 1. The following arrangement is used in the intermediate part 2 b as an example to illustrate that the paper size installed on the upper paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 15-Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 413832 A7 ____B7____ Description of the invention (13) The heat treatment device (HP) in the coating and developing system is described. As shown in FIG. 2, the heat treatment device (HP) includes a casing 41 for heating a hot plate 4 2 of a substrate G located inside the casing 41, and a vent cover 51 covering the upper part of the casing 41 and defining a matching heat. The processing space 50 of the plate 41, and a shutter 60 surround the processing space 50 and move toward or away from the ventilation cover 51. The vent hole 52 is formed in the center of the ceiling of the ventilating cover 51. The housing 41 has an opening 4 1 a opening facing the conveying path 13, and a substrate G is conveyed by the conveying arm 18 a of the main conveying device 18 through the opening 4 1 a. Similar openings 4 1 b are formed on the external load relative to the openings 4 1 a, and these openings 4 1 a and 4 1 b act as air inlets. The air inlets arranged on the opposite side of the housing are used to reduce the difference in airflow rate between the base inlet / outlet side and the opposite side, and therefore the airflow between the base inlet / outlet side of the cooling hot plate 4 2 can be reduced. The difference between the cooling rate and the airflow rate on the opposite side of the cooling makes the temperature distribution in the area above the hot plate uniform. As a result, in the case of the pre-baking treatment, the thickness uniformity of the barrier film can be improved. The space entrances are not limited to two, but can also be four. The hot plate 42 is made of, for example, an aluminum alloy, and has a thickness of about 30 mm. The heater 4 3 for heating the hot plate 42 is arranged on the opposite side or the lower side of the hot plate 42. The heater 43 is of a tube type and is press-fitted in most depressions 42a formed in the lower side 42d of the hot plate 42 as shown in Fig. 3A. Therefore, the heater is fitted in the hot plate 42 as shown in FIG. 3B. The hot plate 4 2 further has a temperature sensor (not shown), and the paper size is applicable to the National Standard (CNS) A4 Zhuge (210X29? Mm) -16: ---- ^ ---- --r J ^ .—.-v_ (Please read the notes on the back before filling in this page) Order i 413832 a7 B7 _ V. Description of the invention (14) The temperature is fed to a control part (not shown), so It can be set at a predetermined processing temperature of, for example, 120 to 15 ° C. The hot plate 42 has four through holes 4 2 b. A support pin 4 4 for supporting the substrate G during transfer is inserted through the associated through hole 4 2 b. The support pin 4 4 is held by a holding member 4 5 arranged below the hot plate 4 2. The holding member 45 is coupled to a lifting mechanism (not shown), so the holding member 45 is moved up and down by the lifting mechanism, and the support pin 44 may protrude or be retracted below the surface 4 2 c of the hot plate 4 2. The base G may be It is placed on the hot plate 42; instead, it may be a proximity type to be held above the hot plate 42 by a support pin 44 or a spacer (not shown) so as not to be in direct contact with the hot plate. A reflecting plate 70 for reflecting radiant heat from the hot plate 42 is arranged in the outer case 41. As shown in FIG. 4, the reflecting plate 70 has a bottom portion 70 a facing the lower side 4 2 d of the hot plate 4 2 at a predetermined distance, and a relevant side 4 2 e facing the hot plate 4 2 at a predetermined distance. Side wall part 7 0 b = Printed by the Shell Specimen Consumer Cooperative of the Central Sample Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) As shown in Figure 2, the reflecting plate 7 0 is set on the housing 4 1 On the base member 73 on the bottom. Furthermore, as shown in FIG. 4, the hot plate 42 is disposed on the bottom portion 7 0 a of the reflecting plate 70 and a spacer 7 1 is interposed therebetween. Therefore, the hot plate 42 and the bottom portion 7 of the reflecting plate 7 0 0 a separation. The distance between the hot plate 42 and the reflecting plate 70 is not particularly limited, but it is preferably set to an appropriate value that maximizes the degree of heat uniformity of the hot plate 42. -The outer frame 7 2 is arranged on the surface 4 2 c of the hot plate 42 to surround the base G with a small gap. The height of the outer M frame 72 is not particularly limited as long as it is higher than the level of the surface of the substrate G, and is set to, for example, 5 mm. The paper scale is applicable to Chinese national standards (CNS > A4 specification (210X297 mm). -J7-413832 A7 B7 V. Description of the invention (15) As shown in Fig. 5, the shutter 60 has a rectangular body 60a and one The horizontal part 6 0 b is continuous from the upper end of the rectangular body and extends from it. The horizontal part 60 b enables air to be introduced from the outside along the lower surface of the ventilation cover 51 to avoid air flowing to the substrate G. As a result, at the substrate G The temperature distribution in the surface can be kept flat, thereby enhancing the uniformity of the thickness of the stopper film. The bracket 61 is protruded from the relevant center of the lower end of the rectangular body 60a. As shown in FIG. 6, the bracket 61 is set at The guide member 62 on the bottom of the housing 41 is held for vertical movement. In particular, each bracket 61 is coupled to a piston rod 64 of a cylinder 63 which serves as a lifting mechanism, and therefore, when the cylinder is driven, it can be Move up and down * Therefore, the shutter 60 can be moved up and down by the cylinder 63 to move toward or away from the vent hole 51. A stopper 65 is attached to the upper end portion of each guide member 62. When the bracket 61 is raised, the stopper 6 5 Fit the bracket 6 1 to stop the shutter 60 at the predetermined position. Quick The uppermost stop position of 60 is set to a level that can provide a gap D between the shutter 60 and the ventilation cover 51, as shown in Figure 7. During the heat treatment, The shutter 60 is raised to the uppermost position, so the processing space 50 can be ventilated in a semi-closed state, where the space 50 is not completely closed because of the gap D between the shutter 60 and the vent cover 51. In this example, due to the ventilation As a result, two air flows are generated, as shown in FIG. 7, that is, the air flow introduced into the processing space 50 through the gap D (hereinafter referred to as the level providing the gap D between the shutter 60 and the ventilation cover 51) and The airflow along the side 4 2e of the hot street 4 2 (hereinafter referred to as the side airflow B). If the side airflow B is too large in the two airflows, the heat will be drawn from the side of the hot plate 42- Note: Please fill in this page again.) This paper size applies Chinese National Standards (CNS > A4 Zhuge (2Ϊ0 × 297mm). The Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives, India 413832 ^ 5. Description of the invention (16) 42e Removed, and therefore, between the center and periphery of the hot plate 42 The temperature difference between portions becomes large, if the thermal uniformity is impaired. As a result, the uniformity of the processing temperature in the surface of the substrate G becomes low. As described above, the supply airflow A and the side airflow B are generated by ventilation, and therefore, If the processing space is ventilated at a fixed rate, the relationship between the two airflows is that when the supply airflow A increases, the side airflow B decreases; on the contrary, when the supply airflow A decreases, the side airflow B increases. It is changed by changing the gap D between the shutter 60 and the ventilation cover 51, so the gap D is set to increase the supply airflow A related to the side airflow B, and the supply airflow A is used to restrict the side airflow B, so in The temperature difference in the hot plate 42 is small. In particular, this gap can be set to 15 to 2 Omm. The ventilation hole 52 is connected to a ventilation mechanism (not shown), whereby the air in the processing space 50 can be released to the outside. As shown in FIG. 7, the inner edge of the horizontal portion 60 b of the shutter 60 extends to The position near the periphery of the hot plate 42, and therefore, when the shutter 60 is moved downward, the upward air flow from the bottom of the hot plate 42 is blocked, thereby preventing the hot plate 42 from being cooled. As shown in FIG. 8: This effect can be further enhanced by overlapping the inner edge portion of the horizontal portion 6 O b with the peripheral edge portion of the hot plate 42. Referring to Fig. 9, the heating and processing of the above-mentioned heat treatment apparatus (HP) will be described below. First, the shutter 60 is moved downward (step 1), and the pin 44 is raised (step 2). Then the base G is sent into the shell 4 1 () by the transfer arm 18 a — (Please read the precautions on the back before filling this page) The paper size of the book is applicable to Chinese national standards (CNS > A4 Zhuge (210X297) -19)-19-Printed by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 413832 A7 B7 V. Description of the invention (17) Step 3) and put it on the pin 44 (Step 4). Then, the pin 44 is lowered while the transfer arm 18 a is retracted (step 5) > Then, the heat treatment is started, and after the heat treatment is started, the shutter 60 is moved upward (step 6). After the substrate is heat-treated for a predetermined time , The shutter 60 moves downward (step 7), and the rear pin 4 4 moves upward to lift the substrate G (step 8), thereby completing the heating process. Then, when the substrate G is lifted, the transfer arm 8a extends to a position below the substrate G (step 9) and then moves upward, whereby the substrate G can be received by the arm 18a (step 10). Then, the substrate G is transferred to the outside by the transfer arm 1 8 a (step 1 1), and then the shutter 60 is moved upward (step 12) »Here, a reflection plate 70 is provided to reflect the radiant heat from the hot plate 42. And therefore, when the heat treatment is performed on the substrate G, the radiant heat is reflected by the reflecting plate toward the hot plate 42. Since the reflecting plate 70 faces the hot plate _ 4 2 under the side 4 2 d and the side 4 2 e at a distance, the heat can be reflected toward the underside 4 2 d and the side 4 2 e, thereby radiating more heat. . Therefore, it is possible to suppress a decrease in the local temperature of the hot plate 42, particularly a decrease in the temperature of the peripheral portion of the hot plate 42, and as a result, the thermal uniformity of the hot plate 42 can be enhanced. The side wall portion 7 0 b of the reflecting plate 70 and the side surface 4 2 e of the heat plate 4 2 are preferably arranged so that they overlap each other, as shown in FIG. 4, so that the heat passes from the side surface 4 2 of the heat plate 4 2 e Proper radiation. The height of the overlapping part (hereinafter referred to as the overlapping height H) is set to 1/3 to 1/2 (such as 15mm.) Of the thickness of the hot plate 42 (such as 30 mm). ^ If the overlapping height (please read first) Note the item on the back, please fill in this page.) The paper size of the edition is applicable to the Chinese national standard (CNS > 8 4 grid (210X297 mm) _ 2〇- A7 B7 Printed by the Central Bureau of Standards, Ministry of Economic Affairs, Consumer Cooperatives. 413832 5 Explanation of the invention (18) Η is too large, the temperature of the peripheral part of the hot plate 42 will become particularly high due to the radiation from the hot plate 42. Therefore, the thermal uniformity of the hot plate 42 will be lost. The heat treatment device (HP) is provided with an outer frame 72 on the surface 4 2 c of the hot plate 42 to surround the substrate G, and this outer frame 72 can prevent air from entering the area surrounding the substrate G. Therefore, the area surrounding the substrate G The temperature will be caused by the air flow generated by ventilation, that is, due to the turbulence, it is not reduced. Therefore, the uniformity of the processing temperature in the surface of the substrate G can be improved. Under heat treatment, when the shutter 60 moves to In the uppermost position, a gap D is formed between the ventilation cover 51 and the shutter 60 of the heat treatment device (HP). It is set so that the side air flow B is suppressed by the supply air flow A, thereby reducing the temperature difference in the hot plate 42, thereby preventing the sudden heat removal of the side surface 42e of the hot plate 42 caused by the fast side air flow B And, therefore, the temperature difference between the central and peripheral portions of the hot plate 42 can be reduced. Therefore, the thermal uniformity of the hot plate 4 can be enhanced, and as a result, the uniformity of the processing temperature in the surface of the substrate G can be improved In order to achieve some beneficial effects, the gap between the ventilation cover 51 and the shutter 60 is set to 15 to 20 mm. In the above heat treatment, the shutter 60 moves downward, and the rear pin 44 moves upward to lift the substrate. (Steps 7 and 8) to avoid the local cooling of the substrate G by directly impacting the air of the substrate G with a high flow rate. This local cooling occurs because when the amount of ventilation air is the same, the air flow rate is high, and When the shutter 60 is raised than when the shutter 60 is lowered, the air flow is more localized. After the heat treatment is completed, the shutter 60 moves upwards at step 12 (please read the note on the back before filling this page)
本紙張尺度適用中國國家揉準(CNS ) Α4思格(210X297公釐) 21 - 經濟部中央標準局舅工消费合作社印製 A7 £7__五、發明说明(19 ) 動,且如同在加熱處理時般,通氣和熱板42受引導至相 同狀態,以在非加熱處理時亦保持熱處理裝置(HP)之 熱環境,且藉以防止在熱板42上方之區域之溫度不均勻 性。 熱板42爲壓裝型,其中加熱器43以壓裝而嵌入熱板 中,因此,和鑄型熱板(其厚度爲4 Omm或更大)不同 的是,於此不會有由製造處理所加在板厚度上之限制,因 此可產生具有較小厚度之熱板。因此,可降低熱板4 2之 厚度以改善對熱之回應和降低重量,且亦可降低熱處理裝 置(HP )之高度。因此,有鑒於裝置尺寸之降低和對熱 之回應,熱板4 2之厚度必須儘可能的小。但是,如果熱 板之厚度小於2 5 mm時,熱處理裝置變成易於受到干擾 ,因此,有鑒於裝置尺寸之降低和熱均勻性之降低間之權 衡,熱板之最佳厚度爲30mm左右。 壓裝型熱扳因爲介於形成在熱板中之凹陷和加熱器間之 空氣層而通常被視爲在熱傳導性上較差。但是,實際上, 於此並未觀察到顯著的反效果,且壓裝型熱板可實際滿意 的使用· 如上所述,以依照此實施例之熱處理裝置(HP),藉 由使用任一前述各種技術,可改善在基底G之表面內之處 理溫度之均勻性,且當組合使用這些技術時,可進一步增 強處理溫度之均勻性。特別的,對於具有840x650 mm之基底G而言,可達成之熱均勻性在1·5t的範圍 內。 413832 <請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家梯準(CNS ) A4祝格(210X297公釐) -22- 經濟部中央橾準局負工消費合作社印裝 413832 ^ 五、發明説明(20 ) 本發明並不限於前述之實施例,而是可以各種方式修改 。例如,在前述之實施例中,阻止器55接附至每個引導 構件5 2,如圖6所示,以在熱處理時,調整介於通氣孔 5 1和快門6 0間之間隙。替代的,如圖1 0所示,間隙 設定突出部9 0亦可形成在快門6 0之內向延伸水平部份 6 Ob之上表面之四個角落上,因此間隙D可由突出部 9 0之高度所決定。此種間隙設定突出部亦可形成在通氣 蓋5 1之表面上》 再者,由於熱板42之角落比其中央部份受到更大程度 之冷卻,因此可使用具有在四各角落上增加高度部份7 5 之反射板7 0 如圖1 1所示。 雖然在上述實施例中,本發明應用在使用於阻止塗層顯 影系統中之熱處理裝置,但是本發明並不單單限於此種應 用。本發明亦可應用至其它處理。再者,在前述實施例中 ,採用LCD基底當成基底,但是基底並不限於LCD基 底,且本發明當然亦可應用至其它型式之基底之處理。 對於熟悉此項技術之人士而言,由本發明之說明可迅 速的瞭解其它的優點和修改。因此,本發明以其廣義的觀 點並不限於前述實施例所述之特殊細節·因此,對本發明 之各種修改皆未能脫離由本發明下述申請專利範園和其等 效例所界定之·一般發明槪念之精神和範疇。 IJ---^-----—— (請先閱讀背面之注意事項再填寫本頁) 訂This paper size applies to China National Standards (CNS) Α4 格格 (210X297 mm) 21-Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Machining and Consumer Cooperatives A7 £ 7__ V. Description of the invention (19), and it is as if it is being heated From time to time, the ventilation and the hot plate 42 are guided to the same state to maintain the thermal environment of the heat treatment device (HP) even during non-heating treatment, and thereby prevent temperature unevenness in the area above the hot plate 42. The hot plate 42 is a press-fit type, in which the heater 43 is embedded in the hot plate by press-fitting. Therefore, unlike the mold hot plate (having a thickness of 4 Omm or more), there is no manufacturing process here. The restrictions imposed on the thickness of the plate can therefore produce a hot plate with a smaller thickness. Therefore, the thickness of the hot plate 42 can be reduced to improve the response to heat and weight, and the height of the heat treatment device (HP) can also be reduced. Therefore, in view of the reduction in the size of the device and the response to heat, the thickness of the hot plate 42 must be as small as possible. However, if the thickness of the hot plate is less than 25 mm, the heat treatment device becomes susceptible to interference. Therefore, in view of the trade-off between the reduction in device size and the reduction in thermal uniformity, the optimal thickness of the hot plate is about 30 mm. The press-fit type thermal trigger is generally considered to be inferior in thermal conductivity because of an air layer between the depression formed in the hot plate and the heater. However, in practice, no significant adverse effect is observed here, and the press-fit type hot plate can be actually used satisfactorily. As described above, with the heat treatment apparatus (HP) according to this embodiment, by using any of the foregoing Various technologies can improve the uniformity of the processing temperature in the surface of the substrate G, and when these technologies are used in combination, the uniformity of the processing temperature can be further enhanced. In particular, for a substrate G with 840x650 mm, the achievable thermal uniformity is in the range of 1.5 t. 413832 < Please read the notes on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 Zhuge (210X297 mm) -22- Printed by the Consumer Affairs Cooperative of the Central Bureau of Standards, Ministry of Economic Affairs 413832 ^ V. Description of the Invention (20) The present invention is not limited to the foregoing embodiments, but can be modified in various ways. For example, in the foregoing embodiment, the stopper 55 is attached to each guide member 52, as shown in FIG. 6, to adjust the gap between the vent hole 51 and the shutter 60 during heat treatment. Alternatively, as shown in FIG. 10, the gap setting protrusion 90 may also be formed on four corners of the upper surface of the horizontal portion 6 Ob extending inwardly of the shutter 60, so the gap D may be determined by the height of the protrusion 90. Decided. Such gap setting protrusions can also be formed on the surface of the ventilation cover 51. Furthermore, since the corners of the hot plate 42 are cooled to a greater degree than the central portion, it can be used to increase the height of the four corners. The reflection plate 7 0 of part 7 5 is shown in FIG. 11. Although in the above embodiments, the present invention is applied to a heat treatment apparatus used in a coating development preventing system, the present invention is not limited to such an application. The invention can also be applied to other processes. Furthermore, in the foregoing embodiment, the LCD substrate is used as the substrate, but the substrate is not limited to the LCD substrate, and the present invention can of course be applied to other types of substrate processing. For those skilled in the art, other advantages and modifications can be quickly understood from the description of the present invention. Therefore, the present invention in its broad sense is not limited to the specific details described in the foregoing embodiments. Therefore, various modifications to the present invention cannot be deviated from the general definition of the following patent application parks of the present invention and their equivalents. The spirit and scope of invention. IJ --- ^ -----—— (Please read the notes on the back before filling this page) Order
II
J 本紙張尺度通用中國國家標準(CNS ) A4祝格(210X297公釐) -23 -J The paper size is in accordance with the Chinese National Standard (CNS) A4 Zhuge (210X297 mm) -23-
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP01830098A JP3363368B2 (en) | 1998-01-16 | 1998-01-16 | Heat treatment equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
TW413832B true TW413832B (en) | 2000-12-01 |
Family
ID=11967770
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW088100274A TW413832B (en) | 1998-01-16 | 1999-01-08 | Heat processing device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3363368B2 (en) |
KR (1) | KR100538714B1 (en) |
TW (1) | TW413832B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100407364B1 (en) * | 2000-06-26 | 2003-12-01 | 유니셈 주식회사 | Bake apparatus for semiconductor wafer |
JP4618912B2 (en) * | 2001-03-12 | 2011-01-26 | Okiセミコンダクタ株式会社 | Heat treatment apparatus for object to be processed and exhaust method thereof |
KR100788389B1 (en) * | 2001-12-29 | 2007-12-31 | 엘지.필립스 엘시디 주식회사 | Exhaust Equipment |
JP3950424B2 (en) | 2003-02-10 | 2007-08-01 | 東京エレクトロン株式会社 | Heat treatment equipment |
JP4290579B2 (en) * | 2004-01-19 | 2009-07-08 | 大日本スクリーン製造株式会社 | Substrate heating apparatus and substrate heating method |
JP6925213B2 (en) * | 2017-09-22 | 2021-08-25 | 東京エレクトロン株式会社 | Heat treatment equipment and heat treatment method |
JP7116558B2 (en) * | 2018-03-02 | 2022-08-10 | 株式会社Screenホールディングス | Substrate processing apparatus and substrate processing system |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2922743B2 (en) * | 1993-03-02 | 1999-07-26 | 大日本スクリーン製造株式会社 | Heat treatment equipment |
JP3028462B2 (en) * | 1995-05-12 | 2000-04-04 | 東京エレクトロン株式会社 | Heat treatment equipment |
JPH11121324A (en) * | 1997-10-13 | 1999-04-30 | Dainippon Screen Mfg Co Ltd | Substrate-heating device |
-
1998
- 1998-01-16 JP JP01830098A patent/JP3363368B2/en not_active Expired - Fee Related
-
1999
- 1999-01-08 TW TW088100274A patent/TW413832B/en not_active IP Right Cessation
- 1999-01-16 KR KR10-1999-0001176A patent/KR100538714B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3363368B2 (en) | 2003-01-08 |
JPH11204428A (en) | 1999-07-30 |
KR100538714B1 (en) | 2005-12-26 |
KR19990067945A (en) | 1999-08-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6087632A (en) | Heat processing device with hot plate and associated reflector | |
KR100829827B1 (en) | Substrate processing unit | |
JP4410147B2 (en) | Heating device, coating, developing device and heating method | |
TW411485B (en) | Substrate treating apparatus | |
JP2006269920A (en) | Heating apparatus, applying and developing apparatus and heating method | |
JP2006303104A (en) | Heating apparatus, coating, developing device and heating method | |
TW400541B (en) | Processing system | |
KR20080080925A (en) | Substrate processing apparatus | |
TW413832B (en) | Heat processing device | |
JP2018018860A (en) | Heat treatment device, substrate processing device, and heat treatment method | |
JP4407971B2 (en) | Substrate processing equipment | |
JP3874960B2 (en) | Substrate processing equipment | |
KR100629255B1 (en) | Bake unit for semiconductor photolithography process | |
US20150062546A1 (en) | Apparatus with surface protector to inhibit contamination | |
JP3898895B2 (en) | Heat treatment apparatus and heat treatment method | |
JP4662479B2 (en) | Heat treatment equipment | |
JP6362416B2 (en) | Holding device, lithographic apparatus, and article manufacturing method | |
JP4869952B2 (en) | Heat treatment equipment | |
JP3324974B2 (en) | Heat treatment apparatus and heat treatment method | |
JP2001237157A (en) | Heat treatment device | |
JP4015015B2 (en) | Heat treatment equipment | |
JP4781165B2 (en) | Heat treatment equipment | |
JP2000012427A (en) | Method and device for treating substrate | |
JP4800226B2 (en) | Heat treatment equipment | |
JP3657186B2 (en) | Heat treatment equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |