JP3898895B2 - Heat treatment apparatus and heat treatment method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate heat treatment apparatus. And heat treatment method About.
[0002]
[Prior art]
In a photolithography process in the manufacture of semiconductor devices, a heat treatment (pre-baking) after applying a resist solution to the surface of a semiconductor wafer (hereinafter referred to as “wafer”), or a heat treatment (post-posting) after pattern exposure. Various heat treatments such as exposure baking) and heat treatment after development are performed.
[0003]
These heat treatments are usually performed by a heat treatment apparatus, and the heat treatment apparatus includes, for example, a heater serving as a heat source, and places a wafer on which the wafer is placed and heated, and the wafer on the heat plate from above. And a lid that forms a covering processing chamber. The heat treatment is performed by placing the wafer on a hot plate maintained at a predetermined temperature, covering the wafer with a lid, and heating the wafer for a predetermined time.
[0004]
Further, since a plurality of types of heat treatments with different recipes are performed in the heat treatment apparatus, it is necessary to change settings such as the hot plate temperature each time the wafer processing recipe is changed. When changing the setting of the hot plate temperature, temporarily stop the heat treatment, change the set value of the hot plate to the heating temperature of the new recipe, and wait until the hot plate temperature reaches the new heating temperature. Then, the heat treatment is started again.
[0005]
[Problems to be solved by the invention]
However, when the hot plate temperature is changed in this way, the temperature of the lid that covers the hot plate also fluctuates, but the temperature of the lid naturally fluctuates due to the radiant heat from the hot plate. It takes a considerable amount of time for the lid temperature to stabilize. At this time, if the heating process of the wafer is resumed while the lid temperature is not stable, the first few wafers are affected by the temperature fluctuation, and the line width of the finally formed circuit pattern is not uniform. become. In addition, when the heat treatment is resumed after waiting until the lid is completely stabilized, the start of heating is delayed by that amount, and as a result, the substrate treatment as a whole takes time and the throughput is lowered.
[0006]
The present invention has been made in view of such a point, and when the hot plate temperature is changed, the heat treatment apparatus in which the lid body temperature quickly follows the hot plate temperature and stabilizes more quickly. And heat treatment method using the heat treatment apparatus The purpose is to provide.
[0007]
[Means for Solving the Problems]
According to the first aspect of the present invention, there is provided a heat treatment apparatus for heat-treating a substrate in a processing chamber, wherein the heat plate for placing and heating the substrate and the substrate placed on the heat plate are covered from above. A lid that forms the processing chamber, the lid is provided with a heat pipe, and the heat pipe is provided with a cooling promoting member for promoting a cooling action of the heat pipe. The Then, the heated substrate is carried out of the processing chamber, the set temperature of the hot plate is changed and the hot plate is lowered to a predetermined temperature while the lid is raised and the processing chamber is opened. In this case, the cooling promotion member promotes the cooling of the heat pipe to increase the temperature drop rate of the lid. The heat processing apparatus characterized by this is provided.
[0008]
In this way, by providing a heat pipe with excellent thermal conductivity and thermal response to the lid, the lid quickly follows the ambient temperature, so even when the temperature of the hot plate is changed, It reacts quickly to temperature fluctuations of the hot plate and stabilizes the lid temperature more quickly. Further, by providing the cooling promoting member, the cooling action of the heat pipe is promoted and the temperature lowering of the lid is promoted, so that the lid can be stabilized quickly. Therefore, the lid temperature does not fluctuate during the substrate heat treatment, and the substrate heat treatment can be performed in a stable environment.
[0009]
In the invention of claim 1, the cooling promoting member may be an electronic cooling element as in claim 2, or a fluid supply member for supplying fluid as a heat exchange medium as in claim 3. May be.
[0010]
In each of the heat treatment apparatuses according to claims 1 to 3 described above, a fin may be attached to the cooling promotion member as in claim 4. In this manner, since the surface area is increased by attaching the fins, heat dissipation from the cooling promoting member is promoted, and the lid can be stabilized more quickly.
[0011]
In addition, each of the heat treatment apparatuses according to claims 1 to 4 may include a temperature control apparatus that controls the temperature of the lid using the cooling promotion member as in claim 5. In this way, by providing the temperature control device, the lid temperature can be controlled to an appropriate temperature. Therefore, the lid temperature is positively adjusted separately from the radiant heat from the hot plate, and the lid temperature is quickly increased. Body temperature can be stabilized. Further, it has been confirmed by the inventors that sublimates and the like are generated from the substrate by heating the substrate and adhere to the low-temperature lid. The adhesion of the sublimate causes an increase in the number of times of maintenance and time, which is not preferable from the viewpoint of throughput. According to the fifth aspect, the temperature of the lid can be controlled to a temperature higher than the temperature at which the temperature of the lid is naturally stabilized by the temperature control device. Therefore, the cover body temperature is controlled to a temperature higher than the stable temperature, so that dew condensation on the lid body of the sublimate can be suppressed as compared with the conventional case.
[0012]
In each of the heat treatment apparatuses described in the first to fifth aspects, the heat pipe is provided on the upper part of the lid formed in a flat plate shape as in the sixth aspect, and the heat pipe is You may make it arrange | position so that the in-plane temperature of the said upper part of a cover body may become uniform. According to the sixth aspect, since the in-plane temperature of the upper part of the lid can be made uniform by the heat pipe, the substrate on the hot plate is thermally influenced by the lid having a biased temperature, and the substrate It can suppress that the heating temperature in a surface becomes non-uniform | heterogenous.
[0013]
In the invention of claim 6, as in claim 7, the heat pipe extends to the side of the lid body and a plurality of projections curved in a convex shape outward from the center of the lid body when viewed from above. The plurality of convex portions may be connected to each other to form a substantially star-shaped annular portion, and the extending portion may be connected to a part of the annular portion. When the heat pipes are arranged in this way, the heat pipes are arranged evenly on the upper part of the lid, so that the in-plane temperature of the upper part of the lid can be made uniform. As a result, the entire surface of the substrate can be heated at an appropriate temperature without the substrate on the hot plate being affected by the heat from the lid having a non-uniform temperature.
[0014]
In each of the heat treatment apparatuses according to Claims 1 to 7, as described in Claim 8, at least the inner upper surface of the lid body facing the substrate may be coated with a fluorine-based resin. By coating the non-adhesive fluororesin in this way, sublimates generated from the substrate surface are less likely to adhere, and the substrate is prevented from being contaminated by falling from the lid onto the substrate. The Also, the number and time of maintenance are reduced.
[0015]
Further, in the inventions of claims 1 to 8, a pipe for supplying or exhausting gas to or from the processing chamber is provided on the top of the lid as in claim 9, and the lid On the inner side, a rectifying plate that rectifies the air flow formed by the gas may be provided, and the rectifying plate may be covered with a fluorine-based resin. When the current plate is provided on the lid in this manner, the adhesion of sublimate to the current plate can be suppressed by coating the current plate with a fluorine-based resin. As a result, it is possible to suppress the deposits from falling on the substrate from the current plate and to reduce the number of maintenance operations.
The heat treatment method of the present invention uses a heat treatment apparatus having a hot plate for placing and heating a substrate, and a lid that covers the substrate placed on the hot plate from above and forms a treatment chamber. A heat treatment method, wherein the lid body is provided with a heat pipe,
A step of heating the substrate on a hot plate in the processing chamber and carrying the substrate out of the processing chamber after the heating is completed; Then, with the lid raised and the processing chamber open, When the set temperature of the hot plate is changed and the hot plate is lowered to a predetermined temperature, a step of cooling a part of the heat pipe to increase the temperature drop rate of the lid, and then the lid is And a step of stopping cooling of a part of the heat pipe when the temperature of the hot plate is lowered to a stable temperature with respect to the predetermined temperature.
In this invention, you may make it cool the said heat plate to the said predetermined temperature, making the cover body absorb the radiant heat from the said heat plate. Further, the temperature of the hot plate may be lowered to the predetermined temperature while blowing gas on the hot plate.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is a plan view of a coating and developing treatment system 1 having a heat treatment apparatus according to the present invention, FIG. 2 is a front view of the coating and developing treatment system 1, and FIG. FIG.
[0017]
As shown in FIG. 1, the coating and developing treatment system 1 carries, for example, 25 wafers W in and out of the coating and developing treatment system 1 from the outside in units of cassettes and carries the wafers W in and out of the cassettes C. A cassette station 2, a processing station 3 in which various processing devices for performing predetermined processing in a sheet-fed process in the coating and developing processing step are arranged in multiple stages, and an exposure (not shown) provided adjacent to the processing station 3 The interface unit 4 that transfers the wafer W to and from the apparatus is integrally connected.
[0018]
In the cassette station 2, a plurality of cassettes C can be placed in a line in a X direction (vertical direction in FIG. 1) at a predetermined position on the cassette placement table 5 serving as a placement portion. The wafer transfer body 7 that can be transferred in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction; vertical direction) of the wafer W accommodated in the cassette C is movable along the transfer path 8. It is provided so that each cassette C can be selectively accessed.
[0019]
The wafer carrier 7 has an alignment function for aligning the wafer W. As will be described later, the wafer carrier 7 is configured to be accessible also to the extension devices 32 belonging to the third processing device group G3 on the processing station 3 side.
[0020]
In the processing station 3, a main transfer device 13 is provided at the center thereof, and various processing devices are arranged in multiple stages around the main transfer device 13 to form a processing device group. In the coating and developing processing system 1, four processing device groups G1, G2, G3, and G4 are arranged, and the first and second processing device groups G1 and G2 are arranged on the front side of the coating and developing processing system 1. The third processing unit group G3 is disposed adjacent to the cassette station 2, and the fourth processing unit group G4 is disposed adjacent to the interface unit 4. Further, as an option, a fifth processing unit group G5 indicated by a broken line can be separately arranged on the back side. The main transfer device 13 can carry in and out the wafer W with respect to various processing devices to be described later arranged in these processing device groups G1, G3, G4, and G5. Note that the number and arrangement of processing apparatus groups vary depending on the type of processing performed on the wafer W, and the number of processing apparatus groups may be arbitrarily selected as long as it is one or more.
[0021]
In the first processing unit group G1, for example, as shown in FIG. 2, a resist coating unit 17 for applying a resist solution to the wafer W and a development processing unit 18 for developing the exposed wafer W are arranged in order from the bottom. It is arranged on the stage. Similarly, in the case of the processing unit group G2, the resist coating unit 19 and the development processing unit 20 are stacked in two stages in order from the bottom.
[0022]
In the third processing unit group G3, for example, as shown in FIG. 3, a cooling device 30 for cooling the wafer W, an adhesion device 31 for improving the fixability between the resist solution and the wafer W, and an extension for waiting the wafer W The apparatus 32, pre-baking apparatuses 33 and 34 as heat treatment apparatuses according to the present embodiment, post-baking apparatuses 35 and 36 for performing heat treatment after the development process, and the like are stacked in order from the bottom, for example, in seven stages.
[0023]
In the fourth processing unit group G4, for example, a cooling unit 40, an extension / cooling unit 41 that naturally cools the mounted wafer W, an extension unit 42, a cooling unit 43, a post-exposure baking unit 44 that performs heat treatment after exposure, 45, post-baking devices 46, 47, and the like are stacked in, for example, eight stages in order from the bottom.
[0024]
A wafer carrier 50 is provided at the center of the interface unit 4. The wafer carrier 50 is configured to be freely movable in the X direction (vertical direction in FIG. 1) and Z direction (vertical direction) and rotated in the θ direction (rotating direction around the Z axis). , Access to the extension / cooling device 41, the extension device 42, the peripheral exposure device 51 and the exposure device (not shown) belonging to the fourth processing unit group G4, and the wafer W can be transferred to each of them. Yes.
[0025]
Next, the configuration of the above-described pre-baking apparatus 33 will be described in detail. As shown in FIG. 4, the pre-baking device 33 includes a lid body 60 that is located on the upper side and configured to be movable up and down by a driving mechanism (not shown), and a processing united with the lid body 60 located on the lower side. And a hot plate accommodating portion 61 forming the chamber S.
[0026]
The lid 60 is made of aluminum or stainless steel and has a substantially cylindrical shape with an open lower end. The upper part 60a of the lid 60 is closed and formed in a disk shape. A heat pipe 62 that is a heat transfer element having excellent thermal conductivity and thermal response is built in the lid upper part 60a. As a result, the temperature of the lid 60 quickly responds to fluctuations in ambient temperature, for example, fluctuations in the hot plate temperature described later, and the lid temperature can be quickly stabilized by heat transfer.
[0027]
As shown in FIG. 5, the heat pipe 62 is disposed so as to form a substantially star-shaped annular portion 62a. With this arrangement, the temperature in the surface of the lid upper portion 60a becomes uniform. The annular portion 62a is configured by connecting a plurality of convex portions 62b curved in a convex shape outward of the lid body 60. Further, the heat pipe 62 has an extending portion 62c that is connected to a part of the annular portion 62a and extends to the side surface of the lid 60, and the tip of the extending portion 62c is an electronic cooling element as a cooling promoting member. It is in contact with a certain Peltier element 64. With this configuration, the cooling action of the heat pipe 62 is promoted by the Peltier element 64, and the temperature drop of the lid 60 can be promoted.
[0028]
The Peltier element 64 is provided with fins 65 that are a plurality of heat dissipating means protruding outward so that the heat of the Peltier element 64 can be effectively dissipated.
[0029]
A temperature sensor 66 is provided on the lid upper portion 60 a, and data of the temperature sensor 66 is output to a temperature control device 67 that is a control unit that controls the temperature of the lid 60. The temperature control device 67 is provided with a function for controlling ON / OFF of the Peltier element 64. The temperature control device 67 controls ON / OFF of the Peltier element 64 based on the output from the temperature sensor 66. As a result, the temperature of the lid 60 can be controlled.
[0030]
A supply pipe 68 for supplying a gas, for example, an inert gas, a nitrogen gas or air, is connected to the central portion of the lid upper portion 60a, and the gas is appropriately supplied into the casing 33a. Can be replaced with a clean atmosphere.
[0031]
A rectifying plate 69 for rectifying the airflow from the supply pipe 68 is provided below the lid upper portion 60 a and inside the lid body 60. The rectifying plate 69 is provided with a large number of slits so as to divide the airflow from above and send a uniform airflow to the wafer W located below.
[0032]
The lower surface 60b of the lid upper portion 60a and the surface of the rectifying plate 69 are coated with a fluorine-based resin used as a non-adhesive antifouling material, for example, Teflon (trade name of DuPont, USA). Thus, the adhesion of sublimated substances generated from the wafer W can be suppressed. In addition, you may make it coat the surface of the other part of the cover body 60 also with a fluorine resin.
[0033]
On the other hand, the hot plate accommodating portion 61 is provided with a hot plate 75 for placing and heating the wafer W. The hot plate 75 is formed in a thin disk shape with a thickness of, for example, about 2 to 10 mm, and the material thereof is, for example, silicon carbide or aluminum nitride which is a ceramic having excellent thermal conductivity.
[0034]
A heater 76 serving as a heat source for the hot plate 75 is provided on the back surface of the hot plate 75 using a printing technique, and the heater 76 can control the amount of heat generated by the heater control device 77. With this configuration, the amount of heat generated by the heater 76 is controlled, and the temperature of the hot plate 75 can be maintained and changed.
[0035]
Below the hot plate 75, a plurality of lifting pins 78 are provided for supporting and lifting the wafer W when the wafer W is loaded and unloaded. The lift pins 78 are configured to be movable up and down by a lift drive mechanism 79. Further, a hole 80 penetrating the hot plate 75 in the vertical direction is provided near the center of the hot plate 75, and the lifting pins 78 move in the vertical direction and pass through the hole 80, so It is configured to protrude.
[0036]
The hot plate accommodating portion 61 includes a support member 81 that supports the outer edge portion of the hot plate 75 and a support base 82 that supports the support member 81. A heat insulating material is used for the support member 81 so that the heat of the hot plate 75 does not escape to the outside. The support base 82 is formed in a substantially cylindrical shape with an upper surface opened, and supports the support member 81 on the upper portion thereof.
[0037]
The hot plate accommodating portion 61 has a support ring 83 as a substantially cylindrical outer peripheral member surrounding the support member 81 and its support base 82. The support ring 83 is provided with an exhaust port 84 for exhausting the atmosphere in the processing chamber S so that the inside of the processing chamber S can be purged. In addition, a cylindrical case 85 serving as an outer periphery of the hot plate accommodating portion 61 is provided outside the support ring 83.
[0038]
On the side surface of the casing 33a of the pre-baking device 33, a transfer port 86 for loading and unloading the wafer W is provided. The transfer port 86 is provided with a shutter 87 that allows the transfer port 86 to be opened and closed. The transfer port 86 blocks heat generated from the pre-baking device 33 as much as possible and does not affect other processing devices thermally. It is configured as follows.
[0039]
Next, the operation of the pre-baking apparatus 33 configured as described above will be described together with the process of the photolithography process performed in the coating and developing treatment system 1.
[0040]
First, the wafer carrier 7 picks up one unprocessed wafer W from the cassette C and carries it into the adhesion apparatus 31 belonging to the third processing unit group G3. In this adhesion device 31, the wafer W coated with an adhesion enhancing agent such as HMDS for improving the adhesion with the resist solution is conveyed by the main conveying device 13 to the cooling device 30 and cooled to a predetermined temperature. Thereafter, the wafer W is transferred to the resist coating unit 17 or 19, and a predetermined amount of resist solution is applied onto the wafer W. Then, the wafer W having the resist film formed on the surface is transferred to the pre-baking device 33 or 34, and heat treatment is performed to evaporate the solvent in the resist solution.
[0041]
The wafer W after the heat treatment is transferred to the extension / cooling device 41 by the main transfer device 13 and cooled to a predetermined temperature. Next, the wafer W is taken out from the extension / cooling device 41 by the wafer carrier 50, and then transferred to the exposure device (not shown) through the peripheral exposure device 51. The wafer W that has been subjected to the exposure processing is transferred to the extension device 42 by the wafer transfer body 50 and then transferred to the post-exposure baking device 44 or 45 by the main transfer device 13. Then, the wafer W is successively transferred by the main transfer device 13 to the cooling device 43, the development processing device 18 or 20, the post-baking device 35, 36, 46 or 47, and the cooling device 30 and subjected to predetermined processing in each device. . Thereafter, the wafer W is returned to the cassette C by the wafer carrier 7 via the extension device 32, and a series of predetermined coating and developing processes are completed.
[0042]
Next, the operation of the above-described pre-baking apparatus 33 will be described in detail. First, before the heat treatment is started, the supply of air from the supply pipe 68 is started, and at the same time, the exhaust from the exhaust pipe 84 of the support ring 83 is started. As a result, a descending airflow is formed in the casing 33a, and the inside of the casing 33a starts to be purged. The hot plate 75 is maintained at a predetermined heating temperature according to the recipe, for example, 140 ° C. by the heater control device 77.
[0043]
When the resist coating process, which is the previous process, is completed and the heating process is started, the shutter 87 of the transfer port 86 is opened, and the wafer W is carried into the pre-baking device 33 by the main transfer device 13. Then, the wafer W transferred to the upper side of the hot plate 75 is supported on the lift pins 78 that have been waiting in advance above the hot plate 63.
[0044]
Next, the lid body 60 is lowered, and the processing chamber S is formed integrally with the hot plate accommodating portion 61. At this time, a uniform downward airflow is formed in the processing chamber S by the air from the supply pipe 68 described above, and the atmosphere in the processing chamber S is purged.
[0045]
Thereafter, the wafer W is lowered together with the lift pins 78 by the lift drive mechanism 79 and placed on the hot plate 75. Heating is started at the same time as the wafer W is placed, and then the wafer W is heated at a heating temperature of 140 ° C. for a predetermined time. At this time, a sublimate such as a resist component or a solvent is generated from the wafer W, and the sublimate is temporarily raised by the heat flow from the hot plate 75. Then, the sublimate is lowered by the downdraft in the processing chamber S and is discharged from the exhaust pipe 84. At this time, the sublimate is exhausted out of the processing chamber S without adhering to the current plate 69 or the like because the current plate 69 and the lower surface 60b of the lid upper part 60a are Teflon-coated.
[0046]
Then, after a predetermined time has passed, the wafer W is raised again by the lift pins 78, and the heating by the hot plate 75 is completed. Next, when the lid 60 is raised and the processing chamber S is opened, the main transfer device 13 enters again from the transfer port 86, and the wafer W is delivered to the main transfer device 13. Then, the wafer W is carried out of the casing 33a from the transfer port 86, and a series of heat treatments is completed.
[0047]
Next, a case where the wafer processing recipe is changed and the heating temperature of the wafer W is changed will be described. For example, when the heating temperature is changed from 140 ° C. to 90 ° C., for example, the lid 60 is raised and the processing chamber S is opened, and the set temperature of the hot plate 75 is first changed from 140 ° C. to 90 ° C. The heating plate temperature is lowered by the heater control device 77. At this time, the temperature of the lid 60 is also lowered as the temperature of the hot plate is lowered, but cooling of the Peltier element 64 is started by the temperature control device 67 separately from the temperature lowering. Part, i.e., the extending portion 62c is cooled. As a result, the cooling action of the heat pipe 62 is promoted, and the temperature drop rate of the lid 60 is increased. When the temperature sensor 66 that detects the lid temperature detects a stable lid temperature that has been obtained in advance through experiments or the like, for example, 70 ° C., the temperature control device 67 that receives the data causes the Peltier element 64 to operate. Cooling by is stopped. As a result, the temperature of the lid body 60 is quickly lowered to follow the temperature drop of the hot plate. The heat stored in the Peltier element 64 is dissipated with the help of the fins 65 provided in the Peltier element 64. Note that the temperature of the hot plate 75 may be lowered while flowing a purge gas such as air from the supply pipe 68. By doing so, since the low-temperature purge gas is blown to the hot plate 75, the temperature of the hot plate 75 can be changed in a shorter time. At this time, the same effect can be obtained even when the lid 60 is closed, and the temperature can be lowered while absorbing the radiant heat from the hot plate 75 by the lid 60, so that the temperature can be changed in a shorter time.
[0048]
Conversely, when the hot plate temperature is raised from 90 ° C. to 140 ° C., for example, the radiant heat from the hot plate 75 is applied to the lid 60 by the heat pipe 62 having excellent thermal conductivity and thermal response. It is transmitted quickly and the lid temperature can follow the hot plate temperature. Further, when the lid temperature is stabilized at a stable temperature, for example, 100 ° C., the lid temperature once exceeds 100 ° C. by the heat of the hot plate 75 and then converges with amplitude. When the temperature exceeds 100 ° C., the Peltier element 64 is activated to lower the temperature of the lid 60. Then, when the lid temperature is lowered to 100 ° C., the cooling of the Peltier element 64 is stopped. By repeating this operation, the lid temperature converges and stabilizes faster. Also in this case, the temperature is detected by the temperature sensor 66 and the temperature control device 67 controls the temperature.
[0049]
In the above embodiment, since the heat pipe 62 is provided in the lid body 60 and the Peltier element 64 is provided in the heat pipe 62, the temperature of the lid body 60 is the temperature of the hot plate 75 when the temperature of the hot plate 75 is changed. The temperature can be tracked quickly, and the lid temperature can be stabilized at a stable temperature with respect to the hot plate temperature more quickly. In particular, when the temperature of the hot plate is lowered, the temperature of the lid 60 is promoted by the Peltier element 64, so that the temperature of the lid 60 can be stabilized at an earlier stage.
[0050]
Further, by providing the Peltier element 64 with fins, the heat stored in the Peltier element 64 can be effectively dissipated, and the temperature of the lid can be lowered. It is also possible to dissipate heat by passing cooling water in addition to the fins.
[0051]
As described above, the heat pipe 62 is provided on the lid upper portion 60a in a substantially annular shape, so that the heat pipe 62 is disposed on the lid upper portion 60a without deviation, and the in-plane temperature of the lid upper portion 60a can be maintained uniformly. . As a result, the in-plane temperature of the wafer W located below the lid 60 is maintained uniformly, and the wafer W can be heated at an appropriate temperature.
[0052]
Furthermore, since non-adhesive Teflon is coated on the lower surface 60b of the lid upper portion 60a and the rectifying plate 69, it is possible to suppress the sublimate generated from the wafer W from adhering to the rectifying plate 69 and the lower surface 66b of the lid 66. . Thereby, it is possible to prevent the adhering matter from falling on the wafer W and contaminating the wafer W. In addition, since the dirt on the current plate 69 and the like is suppressed, the number and time of maintenance of the current plate 69 and the like can be reduced. In the above embodiment, only one rectifying plate 69 is provided. However, a plurality of rectifying plates 69 may be provided, and each of the rectifying plates is coated with a fluorine resin such as Teflon. It may be.
[0053]
In the above embodiment, the Peltier element 64 is used to promote the cooling action of the heat pipe 62. However, a fluid supply member that supplies a fluid as a heat exchange medium may be used. In such a case, for example, as shown in FIG. 6, an air tube 90 as a fluid supply member for supplying air that can be adjusted to a predetermined temperature is provided on the side of the lid 60, and the extending portion 62 c of the heat pipe 62 is connected to the air tube 90. Stretch to the inside. As a result, the air flowing through the air pipe 90 and the extending portion 62c of the heat pipe 62 come into contact with each other, and heat exchange can be performed between them. Then, when the hot plate temperature is changed from high temperature to low temperature and the lid body temperature is lowered, low temperature air is caused to flow into the air tube 90 to cool the extending portion 62c of the heat pipe 62. As a result, the temperature drop of the lid body 60 is promoted, and the lid body temperature can be reached and stabilized at an earlier stage. Note that when the lid temperature rises, the temperature of the lid 60 may be accelerated by setting the air to a high temperature and bringing the air into contact with the heat pipe 62. Further, the fluid as a heat exchange medium to be used may be another gas, for example, nitrogen gas, or a liquid such as water.
[0054]
Further, the air may be blown directly onto the heat pipe 62. For example, as shown in FIG. 7, the extending portion 62c of the heat pipe 62 is exposed on the side portion of the lid 60, and a blowing pipe 95 that can blow out air to the extending portion 62c is provided. Then, when the lid temperature is lowered, air is blown to the extending portion 62c of the heat pipe 62, whereby the cooling action of the heat pipe 62 is promoted and the temperature fall of the lid 60 can be promoted.
[0055]
In the above embodiment, when the hot plate temperature is changed from 140 ° C. to 90 ° C., the lid 60 is cooled down to 70 ° C., which is a stable temperature with respect to the hot plate temperature 90 ° C., but the lid temperature is stabilized. You may make it maintain the temperature higher than 70 degreeC of temperature. In such a case, the temperature of the lid 60 decreases as the temperature of the hot plate decreases, and when the temperature reaches a temperature higher than the stable temperature, for example, 75 ° C., the Peltier element 64 is switched off and the temperature decrease of the lid temperature is stopped at 75 ° C. I will let you. As a result, the temperature difference between the hot plate temperature and the lid body temperature is reduced, so that the sublimate is prevented from coming into contact with the cold lid body and causing condensation on the lid body. Therefore, the adhesion of the sublimate to the lid body 60 can be suppressed, and the number of maintenance times, time, etc. of the lid body 60 can be reduced. Similarly, when changing the hot plate temperature to the high temperature side, the lid temperature may be adjusted to a temperature higher than the stable temperature to suppress the adhesion of sublimates. That is, for example, a heat treatment method for heating a substrate on a hot plate at a predetermined temperature, comprising a lid that covers the substrate placed on the hot plate from above and forms a treatment chamber, and the hot plate The heat treatment method may be characterized in that the temperature of the lid body is adjusted to a temperature higher than the stable temperature of the lid body with respect to the predetermined temperature.
[0056]
The heat treatment apparatus according to the above embodiment is for the PEB apparatus 44 or 45, but can also be applied to other heat treatment apparatuses such as the pre-baking apparatus 33 or 34 and the post-baking apparatus 35, 36, 46 or 47. In addition, application is possible if the heat treatment apparatus has a lid and has a substantially sealed structure.
[0057]
The embodiment described above is an example applied to a heat treatment apparatus for a wafer W in a photolithography process of a semiconductor wafer device manufacturing process, but the present invention is a heat treatment apparatus for a substrate other than a semiconductor wafer, for example, an LCD. It can also be applied.
[0058]
【The invention's effect】
According to the present invention, even when the hot plate temperature is changed, the lid temperature quickly follows the hot plate temperature, so that fluctuations in the heating temperature of the substrate due to the unstable lid temperature can be suppressed. it can. Therefore, since all the substrates can be heated at an appropriate temperature, the yield can be improved. In addition, since the waiting time until the lid temperature is stabilized is shortened, the throughput can be improved.
[0059]
In particular, according to the seventh and eighth aspects of the invention, it is possible to prevent the temperature in the substrate surface from becoming uneven due to the temperature of the lid, so that the substrate can be heated at an appropriate temperature and the yield can be improved.
[0060]
According to the ninth and tenth aspects of the present invention, the adhesion of sublimates to the lid can be suppressed, so that the number of maintenance operations and time can be reduced, and the throughput can be improved accordingly.
[Brief description of the drawings]
FIG. 1 is a plan view showing an outline of a configuration of a coating and developing treatment system having a pre-baking apparatus according to an embodiment.
FIG. 2 is a front view of the coating and developing treatment system of FIG.
FIG. 3 is a rear view of the coating and developing treatment system of FIG. 1;
FIG. 4 is an explanatory view of a longitudinal section of the pre-baking apparatus according to the present embodiment.
FIG. 5 is a plan view showing an outline of a configuration of a lid.
FIG. 6 is a plan view showing an outline of a configuration of a lid when an air tube is provided on the lid.
FIG. 7 is a plan view showing an outline of the configuration of the lid when a blowing tube is provided on the lid.
[Explanation of symbols]
1 Coating and developing treatment system
33 Pre-baking equipment
60 lid
60a Upper lid
60b bottom surface
61 Hot plate housing
62 heat pipe
62c Stretched part
64 Peltier elements
66 Temperature sensor
67 Temperature controller
69 Rectifier plate
75 Hot plate
S treatment room
W wafer

Claims (11)

A heat treatment apparatus for heat-treating a substrate in a processing chamber,
A hot plate to place and heat the substrate;
A lid that covers the substrate placed on the hot plate from above and forms the processing chamber;
The lid is provided with a heat pipe,
The heat pipe is provided with a cooling promoting member for promoting the cooling action of the heat pipe ,
When the heated substrate is unloaded from the processing chamber, the lid is raised and the processing chamber is opened, the set temperature of the hot plate is changed and the hot plate is lowered to a predetermined temperature. The heat treatment apparatus is characterized in that cooling of the heat pipe is promoted by the cooling promoting member to increase a temperature drop rate of the lid .   The heat treatment apparatus according to claim 1, wherein the cooling promotion member is an electronic cooling element.   The heat treatment apparatus according to claim 1, wherein the cooling promotion member is a fluid supply member that supplies a fluid as a heat exchange medium.   The heat treatment apparatus according to claim 1, wherein fins are attached to the cooling promotion member.   5. The heat treatment apparatus according to claim 1, further comprising a temperature control device that controls a temperature of the lid using the cooling promotion member. The heat pipe is provided on the upper part of the lid formed in a flat plate shape,
The heat treatment according to claim 1, wherein the heat pipe is disposed so that an in-plane temperature of the upper portion of the lid is uniform. apparatus. The heat pipe has a plurality of convex portions that are convexly curved outward from the center of the lid as viewed from above, and an extending portion that extends to the side of the lid,
The plurality of convex portions are connected to each other to form a substantially star-shaped annular portion,
The heat treatment apparatus according to claim 6, wherein the extending portion is connected to a part of the annular portion.   The fluororesin is coated on at least the inner upper surface of the lid that faces the substrate, according to any one of claims 1, 2, 3, 4, 5, 6 or 7. Heat treatment device. A pipe for supplying or exhausting gas to the processing chamber is provided at the upper part of the lid,
Inside the lid, a rectifying plate for rectifying the air flow formed by the gas is provided,
The heat treatment apparatus according to any one of claims 1, 2, 3, 4, 5, 6, 7 and 8, wherein the rectifying plate is coated with a fluorine-based resin. A heat treatment method using a heat treatment apparatus having a heat plate for placing and heating a substrate, and a lid that covers the substrate placed on the heat plate from above and forms a treatment chamber,
The lid is provided with a heat pipe,
A step of heating the substrate on a hot plate in the processing chamber and carrying the substrate out of the processing chamber after the heating is completed;
Thereafter the lid is raised, in a state in which the processing chamber is opened, when lowering the set temperature of the heating plate is changed the hot plate to a predetermined temperature, to cool a portion of said heat pipe Increasing the temperature drop rate of the lid, and then stopping cooling of a part of the heat pipe when the lid cools down to a stable temperature with respect to the predetermined temperature of the hot plate. A heat treatment method, further comprising: The heat treatment method according to claim 10, wherein the temperature of the hot plate is lowered to the predetermined temperature while gas is blown onto the hot plate.

Images