JP2008078402A - Heat treatment apparatus - Google Patents

Heat treatment apparatus Download PDF

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Publication number
JP2008078402A
JP2008078402A JP2006256177A JP2006256177A JP2008078402A JP 2008078402 A JP2008078402 A JP 2008078402A JP 2006256177 A JP2006256177 A JP 2006256177A JP 2006256177 A JP2006256177 A JP 2006256177A JP 2008078402 A JP2008078402 A JP 2008078402A
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Japan
Prior art keywords
substrate
heat treatment
treatment apparatus
housing
top plate
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JP2006256177A
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Japanese (ja)
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Hidenori Miyamoto
英典 宮本
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Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Priority to JP2006256177A priority Critical patent/JP2008078402A/en
Priority to PCT/JP2007/066847 priority patent/WO2008035552A1/en
Priority to TW96134304A priority patent/TW200827947A/en
Publication of JP2008078402A publication Critical patent/JP2008078402A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heat treatment apparatus in which the deposit of sublimate generated in heat treatment is effectively prevented. <P>SOLUTION: When a substrate 3 is heated, what is produced by solvent evaporation from a resist liquid etc. applied to the front surface of the substrate 3 or is sublimated from resin agglutinates on a fluororesin coat 11 of the under surface of a top plate 10. The agglomeration objects become to be of fine diameter, because it is formed on the surface of the fluororesin coat 11, but since the fluororesin coat is further slippery, it moves along a slant to fall downward from the edge of the top plate 10. Since the position where the agglomeration drops fall is set outside the substrate 3, it does not become the cause of yield deterioration. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は半導体や液晶パネルの製造工程等において使用される加熱処理装置に関する。   The present invention relates to a heat treatment apparatus used in a manufacturing process of a semiconductor or a liquid crystal panel.

半導体デバイスや液晶パネルの製造工程においては、ガラス基板やウェーハなどの被処理基板に対し洗浄、コーティング、露光、乾燥等の各種工程が行われている。これらの製造プロセスの中間工程において、プリベークやポストベークが必要となり、この場合、被処理基板を加熱処理装置内で加熱処理してから次段の工程に移行している。   In the manufacturing process of a semiconductor device or a liquid crystal panel, various processes such as cleaning, coating, exposure, and drying are performed on a substrate to be processed such as a glass substrate or a wafer. In an intermediate process of these manufacturing processes, pre-baking or post-baking is necessary. In this case, the substrate to be processed is heat-treated in a heat treatment apparatus, and then the process proceeds to the next step.

加熱処理装置の構造は、ハウジング内にホットプレートを配置し、被処理基板をホットプレート上に載置し、ホットプレートにより基板を加熱処理するようにしている(特許文献1)。この既知の加熱処理装置では、ホットプレートの上方にパージ室を形成する蓋体が設けられ、この蓋体の裏面にはホットプレートと対向する反射板が形成されている。   The structure of the heat treatment apparatus is such that a hot plate is disposed in a housing, a substrate to be processed is placed on the hot plate, and the substrate is heat treated by the hot plate (Patent Document 1). In this known heat treatment apparatus, a lid for forming a purge chamber is provided above the hot plate, and a reflection plate facing the hot plate is formed on the back surface of the lid.

特開平5−326532号公報JP-A-5-326532

加熱処理中には、基板表面に形成された塗布膜から溶剤が気化するだけでなく、前記塗布膜に含まれる樹脂等に起因する昇華成分が昇華し、ハウジングの天井面を含む内側表面に析出する。   During the heat treatment, not only the solvent evaporates from the coating film formed on the substrate surface, but also sublimation components due to the resin contained in the coating film sublimate and deposit on the inner surface including the ceiling surface of the housing. To do.

ハウジングの天井面に昇華物が析出すると、析出した昇華物が成長し、加熱処理中に基板上に落下してしまうことがある。このように基板上に昇華物が落下するとピンホールなどの不良発生の原因となる。このため、数週間に1回程度、析出した昇華物を除去する清掃を行ない、昇華物が基板上に落下するリスクを低減する必要があり、人手が必要になるとともに清掃の間は装置を停止しなければならず生産効率も低下する。   If the sublimate deposits on the ceiling surface of the housing, the deposited sublimate may grow and fall on the substrate during the heat treatment. If the sublimate falls on the substrate in this way, it causes a defect such as a pinhole. For this reason, it is necessary to clean the removed sublimate once every few weeks to reduce the risk that the sublimate will fall on the substrate, requiring manual labor and stopping the device during cleaning. Production efficiency must be reduced.

上記課題を解決するため本発明に係る加熱処理装置は、ハウジングの天井面または当該天井面から吊り下げられた天板の下面に、フッ素樹脂またはシリコン樹脂からなる撥水・撥油被膜を形成するようにした。
撥水・撥油被膜を形成することで、第1に付着する析出物の粒径が極めて小さくなり、第2に仮に天井面や天板から落下した場合でも、気流によって排気口に運ばれ、基板表面に落下する確率が大幅に低減する。
In order to solve the above problems, the heat treatment apparatus according to the present invention forms a water / oil repellent film made of fluororesin or silicon resin on the ceiling surface of the housing or the lower surface of the top plate suspended from the ceiling surface. I did it.
By forming a water- and oil-repellent coating, the particle size of the first deposit is extremely small, and even if it falls from the ceiling or top plate, it is carried to the exhaust port by the air current, The probability of falling on the substrate surface is greatly reduced.

また、ハウジングの天井面または当該天井面から吊り下げられた天板をハウジングの一方(排気口がある側)に向けて傾斜させてもよい。このようにすることで、天井面または天板の下面に付着した析出物となる液体は傾斜に沿って移動し、基板から外れた箇所に落下する。   Further, the ceiling surface of the housing or the top plate suspended from the ceiling surface may be inclined toward one side of the housing (side with the exhaust port). By doing in this way, the liquid used as the deposit adhering to the ceiling surface or the lower surface of the top plate moves along the inclination and falls to a place off the substrate.

フッ素樹脂被膜としては、四フッ化エチレン樹脂(PTFE)、四フッ化エチレンペルフルオロアルコキシビニルエーテル共重合体(PFA)、四フッ化エチレン・六フッ化プロピレン共重合体(FEP)、ポリクロロトリフルオロエチレン(PCTFE)、クロロトリフルオロエチレン・エチレン共重合体(ECTFE)、ポリビニルフロライド(PVF)四フッ化エチレン・エチレン共重合体(ETFE)、ポリビリニデンフロライド(PVDF)を用いることができる。   Examples of fluororesin coatings include tetrafluoroethylene resin (PTFE), tetrafluoroethylene perfluoroalkoxy vinyl ether copolymer (PFA), tetrafluoroethylene / hexafluoropropylene copolymer (FEP), polychlorotrifluoroethylene. (PCTFE), chlorotrifluoroethylene / ethylene copolymer (ECTFE), polyvinyl fluoride (PVF) tetrafluoroethylene / ethylene copolymer (ETFE), and polyvinylidene fluoride (PVDF) can be used. .

本発明によれば、加熱処理中の被処理体上に析出物が落下する不具合が解消される。また、清掃する回数も低減することができる。   According to the present invention, the problem that precipitates fall on the object to be processed during the heat treatment is solved. Moreover, the frequency | count of cleaning can also be reduced.

図1は本発明による加熱処理装置の一例を示す断面図である。加熱処理装置は、ハウジング1を有し、当該ハウジング1内にホットプレート2を備えている。ホットプレート2は内部に加熱装置を有し、載置した基板(被処理体)3を加熱する。なお、基板3表面にはフォトレジスト組成物等の感光性組成物、SOG材料等が塗布されている。   FIG. 1 is a sectional view showing an example of a heat treatment apparatus according to the present invention. The heat treatment apparatus has a housing 1 and includes a hot plate 2 in the housing 1. The hot plate 2 has a heating device inside, and heats the placed substrate (object to be processed) 3. Note that a photosensitive composition such as a photoresist composition, an SOG material, and the like are applied to the surface of the substrate 3.

また、加熱処理装置はホットプレート2を貫通する昇降ピン4a〜4cを備え、加熱処理前の基板3が、シャッタ5を介してアームにより搬入され、上昇したピン4a〜4cに受け渡され、該ピン4a〜4cが下降することによりホットプレートに載置される。そして、ホットプレートにて該基板の加熱処理が行われる。   Further, the heat treatment apparatus includes elevating pins 4a to 4c that penetrate the hot plate 2, and the substrate 3 before the heat treatment is carried by the arm via the shutter 5 and transferred to the raised pins 4a to 4c, The pins 4a to 4c are placed on the hot plate by lowering. Then, the substrate is heated by a hot plate.

ハウジング1はホットプレート2をはさんで互いに対向する第1及び第2の側壁1a及び1bおよび天井面1cを有し、側壁1aにはシャッタ5を設け、側壁1bには真空源に接続する排気口6を設けている。   The housing 1 has first and second side walls 1a and 1b and a ceiling surface 1c facing each other across the hot plate 2. The side wall 1a is provided with a shutter 5, and the side wall 1b is connected to a vacuum source. A mouth 6 is provided.

ハウジング1の天井面1cからはその下面が基板3の表面に接近して対抗する天板10が吊り下げられている。この天板10は前記シャッタ5の側が高く排気口6の側が低くなるように全体が傾斜し、更に天板10の下面には撥水・撥油被膜であるフッ素樹脂被膜11が形成されている。フッ素樹脂被膜11の代わりにシリコン樹脂被膜でもよい。   A ceiling plate 10 is suspended from the ceiling surface 1c of the housing 1 so that its lower surface approaches the surface of the substrate 3 and opposes it. The entire top plate 10 is inclined so that the shutter 5 side is high and the exhaust port 6 side is low. Further, a fluororesin coating 11 which is a water / oil repellent coating is formed on the lower surface of the top 10. . A silicon resin film may be used instead of the fluororesin film 11.

以上において、基板3を加熱すると、基板3の表面に塗布されたレジスト液などから溶剤が気化しあるいは樹脂から昇華したものが天板10の下面のフッ素樹脂被膜11で凝集する。凝集物はフッ素樹脂被膜11の表面に形成されるため微細な径となるが、更にフッ素樹脂被膜は滑りやすいので、図2に示すように傾斜に沿って移動し、天板10の端部から下方に落下する。凝集液滴が落下する位置は基板3よりも外側にしているため、歩留り低下の原因にはならない。   In the above, when the substrate 3 is heated, the solvent evaporated from the resist solution or the like applied on the surface of the substrate 3 or sublimated from the resin is aggregated in the fluororesin coating 11 on the lower surface of the top plate 10. Since the aggregate is formed on the surface of the fluororesin coating 11 and has a fine diameter, the fluororesin coating is more slippery, and therefore moves along an inclination as shown in FIG. Fall down. Since the position where the aggregated droplets fall is outside the substrate 3, it does not cause a decrease in yield.

図3は別実施例を示す断面図であり、この実施例にあっては天板を設けておらず、その代わり、ハウジング1の天井面1cにフッ素樹脂被膜11を形成している。   FIG. 3 is a cross-sectional view showing another embodiment. In this embodiment, a top plate is not provided, and a fluororesin film 11 is formed on the ceiling surface 1c of the housing 1 instead.

図3に示した実施例にあっては天井面1cは傾斜させていないが、前記実施例と同様に排気口6に向けて傾斜させてもよい。   In the embodiment shown in FIG. 3, the ceiling surface 1 c is not inclined, but may be inclined toward the exhaust port 6 as in the above-described embodiment.

本発明は上述した実施例だけに限定されず種々の変形や変更が可能である。例えば、排気口を側壁に設けているが、上側壁部または下側壁部に設けてもよい。特に天板を設けた場合には、天板と対向する上側壁部に排気口を設けることができる。   The present invention is not limited to the above-described embodiments, and various modifications and changes can be made. For example, although the exhaust port is provided on the side wall, it may be provided on the upper side wall or the lower side wall. In particular, when a top plate is provided, an exhaust port can be provided in the upper side wall portion facing the top plate.

また撥水・撥油被膜を黒色としてもよい。このようにすることで撥水・撥油被膜の温度が上がるため、昇華物が冷却されて析出することを抑制する効果がある。   The water / oil repellent coating may be black. By doing so, the temperature of the water-repellent / oil-repellent coating is increased, and there is an effect of suppressing the sublimate from being cooled and deposited.

本発明による加熱処理装置の一例を示す断面図Sectional drawing which shows an example of the heat processing apparatus by this invention 昇華物の動きについて説明した図Diagram explaining the movement of sublimation 加熱処理装置の変形例を示す断面図Sectional drawing which shows the modification of heat processing apparatus

符号の説明Explanation of symbols

1…ハウジング、1a,1b…ハウジングの側壁部、1c…ハウジングの天井面、2…ホットプレート、3…基板、4a〜4c…ピン、5…シャッタ、6…排気口、11…撥水・撥油被膜、10…天板。   DESCRIPTION OF SYMBOLS 1 ... Housing, 1a, 1b ... Side wall part of housing, 1c ... Ceiling surface of housing, 2 ... Hot plate, 3 ... Substrate, 4a-4c ... Pin, 5 ... Shutter, 6 ... Exhaust port, 11 ... Water repellent / repellent Oil coating, 10 ... top plate.

Claims (2)

ハウジング内に被処理体を加熱処理するホットプレートを配置した加熱処理装置において、前記ハウジングの天井面または当該天井面から吊り下げられた天板の下面にはフッ素樹脂またはシリコン樹脂からなる撥水・撥油膜が形成されていることを特徴とする加熱処理装置。 In the heat treatment apparatus in which a hot plate for heat-treating the object to be processed is disposed in the housing, the ceiling surface of the housing or the lower surface of the top plate suspended from the ceiling surface is provided with a water repellent made of fluororesin or silicon resin. A heat treatment apparatus in which an oil repellent film is formed. 請求項1に記載の加熱処理装置において、前記フッ素樹脂被膜が形成された面はハウジング内の一端に向かって傾斜していることを特徴とする加熱処理装置。 2. The heat treatment apparatus according to claim 1, wherein the surface on which the fluororesin film is formed is inclined toward one end in the housing.
JP2006256177A 2006-09-21 2006-09-21 Heat treatment apparatus Pending JP2008078402A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006256177A JP2008078402A (en) 2006-09-21 2006-09-21 Heat treatment apparatus
PCT/JP2007/066847 WO2008035552A1 (en) 2006-09-21 2007-08-30 Heat treatment apparatus
TW96134304A TW200827947A (en) 2006-09-21 2007-09-13 Heat treatment apparatus

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Application Number Priority Date Filing Date Title
JP2006256177A JP2008078402A (en) 2006-09-21 2006-09-21 Heat treatment apparatus

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TW (1) TW200827947A (en)
WO (1) WO2008035552A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012238735A (en) * 2011-05-12 2012-12-06 Lapis Semiconductor Co Ltd Exhaust structure of thermal treatment apparatus
JP2012253171A (en) * 2011-06-02 2012-12-20 Toppan Printing Co Ltd Prebake apparatus and prebake method
US20160258034A1 (en) * 2015-03-03 2016-09-08 Mitsui High-Tec , Inc. Heat-treatment apparatus and heat-treatment method

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CN107444776A (en) * 2017-07-28 2017-12-08 武汉华星光电技术有限公司 Bogey and its clean method, the high-temperature heating device of high-temperature heating device

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
JP2889935B2 (en) * 1990-10-11 1999-05-10 東京エレクトロン株式会社 Substrate heating device
JP3898895B2 (en) * 2001-01-26 2007-03-28 東京エレクトロン株式会社 Heat treatment apparatus and heat treatment method
JP2004158549A (en) * 2002-11-05 2004-06-03 Tokyo Electron Ltd Substrate drying apparatus and substrate drying method
JP2005019593A (en) * 2003-06-25 2005-01-20 Matsushita Electric Ind Co Ltd Method and apparatus for heat treatment
JP4515335B2 (en) * 2004-06-10 2010-07-28 株式会社ニコン Exposure apparatus, nozzle member, and device manufacturing method
KR20180125636A (en) * 2005-01-31 2018-11-23 가부시키가이샤 니콘 Exposure apparatus and method for manufacturing device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012238735A (en) * 2011-05-12 2012-12-06 Lapis Semiconductor Co Ltd Exhaust structure of thermal treatment apparatus
JP2012253171A (en) * 2011-06-02 2012-12-20 Toppan Printing Co Ltd Prebake apparatus and prebake method
US20160258034A1 (en) * 2015-03-03 2016-09-08 Mitsui High-Tec , Inc. Heat-treatment apparatus and heat-treatment method
CN111910064A (en) * 2015-03-03 2020-11-10 株式会社三井高科技 Heat treatment equipment
US11174527B2 (en) 2015-03-03 2021-11-16 Mitsui High-Tec, Inc. Heat-treatment apparatus and heat-treatment method
CN111910064B (en) * 2015-03-03 2022-08-09 株式会社三井高科技 Heat treatment equipment

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TW200827947A (en) 2008-07-01

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