KR20190068121A - Heating unit for bake process and bake apparatus having the same - Google Patents

Abstract

The present invention provides a heating unit for a bake process, including: a support plate main body heated by a heater; proximity pins respectively protruding from an upper surface of the main body and supporting a substrate to form a first gap between the substrate and the main body; and a dam forming a second gap reduced smaller than the first gap at an edge portion between the substrate and the main body, and a bake apparatus having the heating unit.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a heating unit for a bake process,

An embodiment of the present invention relates to a heating unit used in a baking process for heating a substrate and a baking apparatus including the same.

In order to manufacture a semiconductor device, various processes such as photo, etching, deposition, and ion implantation must be performed. Among these processes, a photolithography process for forming a circuit pattern on the surface of a substrate includes a process of applying a photosensitive liquid such as a resist to a substrate, a process of exposing a circuit pattern to a substrate on which a photoresist film is formed, And a baking process for heating the substrate is performed before or after performing these coating processes, exposure processes, or development processes.

Fig. 1 shows a configuration in which a general bake apparatus is shown, and a bake apparatus is used in the bake process. As shown in Fig. 1, the bake apparatus is arranged such that the heating unit 2 is disposed inside the bake chamber 1. The heating unit 2 includes a support plate 3 for supporting the substrate and a heater (not shown) for applying heat to the support plate 3 so that the substrate placed on the support plate 3 is heated do. The support plate 3 together with the heater constitutes a hot plate. The support plate 3 includes a plate body 3a and proximity pins 3b projecting upward from the upper surface of the plate body 3a so as to project the substrate from the plate body 3a to the upper side And is spaced apart by the projecting height of the pins 3b.

Such a baking apparatus has a configuration in which the contact area between the substrate and the support plate 3 is reduced since the substrate is only in contact with the proximity pins 3b. Accordingly, the risk of damage to the substrate due to contact with the support plate 3 during the bake process and the degree of contamination can be greatly reduced. However, since the gap G corresponding to the protruding height of the proximity pins 3b is formed between the substrate and the plate body 3a, a relatively low temperature airflow is generated between the substrate and the plate body 3a The temperature of the substrate is rapidly lowered or the temperature distribution of the substrate is differently maintained in each region, which may cause a reduction in the bake process efficiency or a failure.

Korean Patent Publication No. 10-2013-0112560 (Oct. 14, 2013)

It is an object of the present invention to provide a heating unit and a baking apparatus including the same that can maintain the temperature of the substrate more uniformly and stably during the baking process.

The problems to be solved are not limited thereto, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to an embodiment of the present invention, there is provided a plasma processing apparatus comprising: a support plate on which a substrate is placed; And a heater for applying heat to the support plate, wherein the support plate comprises: a plate body; Proximal pins each protruding from an upper surface of the plate body and forming a first gap between the plate body and the substrate supported and supported by the substrate; And a partial shielding means for forming a second gap between the edge of the substrate supported by the proximity pins and the edge of the plate body, the second gap being smaller than the first gap. .

The partial shielding means may include a dam provided along the edge of the plate body and protruding upward.

The second gap may be 20-40% of the first gap in size.

Each of the proximity pins may include a heat insulating material at a part including at least a portion in contact with the substrate.

Here, each of the proximity pins may be coated with the heat insulating material at a portion including a portion in contact with the substrate. Alternatively, each of the proximity pins may have a contact member in contact with the substrate, and the contact member may be made of the heat insulating material.

At least one suction hole may be formed in the plate body to prevent the substrate from being warped by providing a suction force to the substrate supported by the proximity pins.

According to an embodiment of the present invention, there is provided a bake processing apparatus comprising: a bake chamber for providing a processing space for a bake process; A support plate disposed in the processing space and on which the substrate is placed; And a heater for applying heat to the support plate, wherein the support plate comprises: a plate body; Proximal pins each protruding from an upper surface of the plate body and forming a first gap between the plate body and the substrate supported and supported by the substrate; And a partial shielding means formed between the edge portion of the substrate supported by the proximity pins and the edge portion of the plate body to form a second gap reduced relative to the first gap .

The bake apparatus according to the embodiment of the present invention may further include a gas supply unit that supplies heated gas to the processing space.

Means for solving the problems will be more specifically and clarified through the embodiments, drawings, and the like described below. In addition, various solution means other than the above-mentioned solution means may be further proposed.

According to the embodiment of the present invention, since the distance between the edge portion side between the substrate supported by the proximity pins and the plate body is relatively reduced by the partial shielding means (dam), the flow of the airflow between the substrate and the plate body is suppressed So that the temperature distribution of the substrate can be more uniformly maintained during the baking process.

In addition, since the gas heated by the gas supply unit is supplied to the processing space, the temperature of the airflow flowing between the substrate and the plate body can be increased, and the temperature distribution of the substrate can be more uniformly maintained during the baking step.

1 is a configuration diagram showing a general baking apparatus.
2 is a configuration diagram showing a bake apparatus according to an embodiment of the present invention.
Fig. 3 is a partially enlarged view of Fig. 1 showing a part of the heating unit applied to the bake apparatus according to the embodiment of the present invention.
4 shows the temperature distribution of the substrate according to the size of the second gap in the bake apparatus according to the embodiment of the present invention.
Fig. 5 shows the temperature distribution of the substrate according to the temperature of the gas supplied to the processing space in the bake apparatus according to the embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. For a better understanding of the invention, it is to be understood that the size of elements and the thickness of lines may be exaggerated for clarity of understanding. Further, the terms used to describe the embodiments of the present invention are mainly defined in consideration of the functions of the present invention, and thus may be changed depending on the intentions and customs of the user and the operator. Therefore, the terminology should be interpreted based on the contents of the present specification throughout.

The heating unit for the baking process and the baking apparatus including the heating unit according to the embodiment of the present invention may be used for a substrate such as a wafer for manufacturing a semiconductor or a glass for manufacturing a flat panel display (FPD) Can be used to carry out a baking process for heating.

2 is a configuration diagram showing a bake apparatus according to an embodiment of the present invention. 2, the bake apparatus according to the embodiment of the present invention includes a bake chamber 10 having a processing space 12, a heating unit 20 disposed in the processing space 12, And a gas supply unit (30) for supplying heated gas to the gas supply unit (12).

The bake chamber 10 may be formed to have a rectangular parallelepiped structure. The processing space 12 for the bake process consists of an internal space defined by the bake chamber 10. Although not shown, the bake chamber 10 transports the processed substrate W to the processing space 12 (hereinafter, abbreviated as the reference numeral is omitted), and transfers the processed substrate to the outside of the processing space 12 As shown in FIG. For example, a substrate entrance port is formed on the side of the bake chamber 10 for loading and unloading the substrate, and the substrate entry / exit port can be opened / closed by a door opening / closing means such as a door.

The heating unit 20 performs a heating process on the substrate carried in the processing space 12. [ Although not shown, the bake apparatus according to the embodiment of the present invention may further include a cooling unit for performing a cooling process on the substrate subjected to the heat treatment by the heating unit 20. [ For example, the cooling unit may be configured to cool the substrate to room temperature using a cooling water or a thermoelectric element or the like.

The bake apparatus according to the embodiment of the present invention is characterized in that when the bake apparatus further includes a cooling unit, a sub-chamber is provided in the bake chamber 10, and an internal space defined by the sub- The space 12 may be formed.

The bake apparatus according to the embodiment of the present invention can be configured such that the heating unit 20 selectively processes the substrate in an atmospheric pressure atmosphere.

The heating unit 20 includes a heater 24 that applies heat to the support plate 22 and the support plate 22. The support plate 22 and the heater 24 constitute a hot plate. The support plate 22 is arranged in the horizontal direction and the substrate is placed thereon. The support plate 22 is formed to have a shape corresponding to the substrate and a somewhat larger area than the substrate. The heater 24 may be disposed inside the support plate 22 or may be mounted at the lower portion thereof. The heater 24 can also be configured to uniformly apply heat to the support plate 22 and raise the temperature of the support plate 22 to about 110 ° C or higher. For example, as the heater 24, a flat heater may be applied or a type using a hot wire may be applied.

Fig. 3 is a partially enlarged view of Fig. 1 showing a part of the heating unit 20. Fig.

3, the support plate 22 on which the substrate is placed is protruded upward from the upper surface of the plate body 222 and the plate body 222, and the substrate is separated from the plate body 222 by a predetermined height The distance between the edge of the plate body 222 and the substrate supported by the proximity pins 224 and the proximity pins 224 that support the substrate 230 is relatively reduced And partial shielding means (see reference numeral 226).

The plate body 222 is preferably made of a material excellent in heat resistance and thermal conductivity. For example, the plate body 222 may be configured to have a thermal conductivity of about 169 W / mK by aluminum nitride (AIN).

It is preferable that the upper surface of the plate body 222 is formed to be flat throughout and the proximity pins 224 are uniformly distributed on the upper surface of the plate body 222. The proximity pins 224 all protrude in the vertical direction and the protruded heights can be formed to be substantially equal to each other. The distance that the substrate supported by the proximity pins 224 is spaced upward from the top surface of the plate body 222 is determined by the projecting height of the proximity pins 224. According to the configuration in which the substrate is spaced upward from the plate body 222 by the proximity pins 224, a first gap (corresponding to the projection height of the proximity pins 224) G1) are formed. For example, the protrusion height of the proximity pins 224 may be about 100 탆 or more.

Since the partial shielding means (see reference numeral 226) reduces the gap between the substrate and the plate body 222, the gap G1 is formed between the edge of the substrate and the edge of the plate body 222 A reduced second gap G2 is formed. Such a partial shielding means comprises an annular dam 226 provided along the edge of the plate body 222 and projecting upwardly.

The dam 226 may be integrally formed with the plate body 222. The dam 226 may be formed so that the protrusion height and width are uniform as a whole. The projection height of the dam 226 is lower than the projecting height of the proximity pins 224 so that the second gap G2 is smaller in size than the first gap G1 (G2 < G1).

Such a dam 226 reduces the gap between the substrate and the plate body 222 to the edge portion side to a second gap G2 smaller than the first gap G1, It is possible to prevent a low-temperature airflow from flowing from the periphery to the space between the substrate and the plate body 222, thereby preventing the temperature of the substrate from dropping sharply or the temperature deviation of the substrate from becoming extreme.

If the size of the second gap G2 is relatively large, the airflow is relatively smoothly introduced into the space between the substrate and the plate body 222 from the periphery, which is disadvantageous in terms of preventing the temperature of the substrate from dropping and minimizing the temperature deviation of the substrate. On the contrary, if the size of the second gap G2 is relatively small, only the flow of air into the space between the substrate and the plate body 222 can be effectively prevented. However, if the size of the second gap G2 is relatively small, Since the high temperature thermal energy is transmitted to the edge portion of the substrate with a relatively high efficiency, it is further disadvantageous in terms of minimizing the temperature deviation of the substrate. Considering such matters, the size of the second gap G2 is preferably 20% to 40% of the first gap G1. For example, if the size of the first gap G1 is 100 mu m, the size of the second gap G2 may be 20 mu m to 40 mu m.

2, the heating unit 20 further includes suction means 26 for providing a suction force in the downward direction with respect to the substrate supported by the proximity pins 224. As shown in FIG. The substrate may be bent due to the high temperature during the baking process. When the substrate is warped, the substrate can be heated unevenly. The suction means 26 adheres the substrate to the proximity pins 224 with a suction force to suppress warpage of the substrate. That is, it plays a role of correcting the warp of the substrate and keeping the substrate flat.

The suction means 26 includes a suction portion 262 facing the substrate below the substrate supported by the proximity pins 224, a suction line 264 connected to the suction portion, and a suction line 264 (Not shown).

Here, the suction portion is composed of at least one suction hole 262 penetrating the plate body 222. A plurality of suction holes 262 may be provided and uniformly distributed to the plate body 222. As the suction force generating source 266, a suction pump or the like may be applied.

When the suction force generating source 266 is operated, the suction force acts on the substrate supported by the proximity pins 224, and the substrate is brought into close contact with the proximity pins 224. At this time, particles such as particles that may occur during the baking process may be discharged to the outside of the processing space 12 through the suction hole 262 and the suction line 264.

The gas supply unit 30 includes a gas supply unit, a gas supply line 32, and a gas heating source 34. The gas supply part is provided in the bake chamber 10 so as to be able to supply gas to the processing space 12. The gas supply part may be constituted by at least one gas supply hole penetrating the bake chamber (10). The gas supply line 32 is connected to the gas supply unit. The gas heating source 34 is installed on the gas supply line 32 to heat the gas. As the gas heating source 34, it is preferable to apply a type that can rapidly heat the gas to a high temperature. The gas supply unit 30 may be configured to supply air as a gas.

According to the gas supply unit 30, since the heated gas is supplied to the processing space 12, the temperature of the substrate flowed between the substrate and the plate body 222 during the baking process is increased, Can be prevented. The temperature of the gas supplied to the processing space 12 may be set to 70% to 80% of the temperature of the support plate 22, considering energy consumption due to gas heating, prevention of the temperature drop of the substrate, and the like.

On the other hand, each portion contacting the proximity pins 224 in the substrate is maintained at a higher temperature than the other portions during the bake process. Of course, this serves as a factor for hindering the uniformity of the temperature distribution of the substrate. To solve this problem, the proximity pins 224 are formed in a spherical surface such that the portion in contact with the substrate is in point contact with the substrate. Further, the proximity pins 224 include an insulating material having a low thermal conductivity in a part including the portion which is in contact with the substrate as a whole or the whole.

For example, the proximity pins 224 may be coated to a predetermined thickness by a heat insulating material, including a portion of the whole or the entire substrate, which is in contact with the substrate. As another example, the proximity pins 224 may be made entirely or partially of insulating material, including the portion of the substrate that is in contact with the substrate. The proximity pins 224 may be coupled to the top of the pin body 224a and the pin body 224a, respectively, if the portion of the proximity pins 224 that includes the portion in contact with the substrate is made of a heat insulating material And the contact member 224b constituted by the attached contact member 224b and in contact with the substrate may be made of a heat insulating material. For example, ceramics such as zirconium oxide (ZrO2) may be used as the heat insulating material.

The following Table 1 shows the results of an experiment with respect to the temperature distribution of the substrate depending on the size of the second gap G2.

[Table 1]

T1 is the temperature of the support plate 22

- G1: first clearance

- G2: second gap

- ΔT: Temperature deviation of the substrate

As can be seen in Table 1 and FIG. 4, when the size of the second gap G2 is 30 μm (No. 1.3) corresponding to the range of 20% to 40% of the first gap G1, The lowest value is 0.8 ℃.

The size of the second gap G2 of 0 占 퐉 means that the edge portion of the substrate and the edge portion of the plate body 222 are in contact with each other. In this case (No. 1.1), the temperature deviation of the substrate is 31.3 占 폚, The temperature distribution of the sample was very uneven. The size of the second gap G2 of 100 mu m means a state in which the dam 226 is not applied. In this case (No. 1.4), the temperature distribution of the substrate is uneven because the temperature deviation of the substrate is 11.2 DEG C.

The following Table 2 shows the results of the experiment with respect to the temperature distribution of the substrate according to the temperature of the gas supplied by the gas supply unit 30 in the processing space 12. [

[Table 2]

T1 is the temperature of the support plate 22

- T2: temperature of the gas

- G1: first clearance

- G2: second gap

- ΔT: Temperature deviation of the substrate

5, the temperature of the gas supplied by the gas supply unit 30 to the processing space 12 is 80 DEG C, which is in the range of 70% to 80% of the temperature of the support plate 22 (No. 2.2), the temperature distribution of the substrate was found to be uniform at 1.5 ° C and the substrate temperature was 31.3 ° C at the temperature of 50 ° C (No. 2.1) The temperature distribution of the sample was very uneven.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Further, the technical ideas described in the embodiments of the present invention may be performed independently of each other, or two or more may be implemented in combination with each other.

10: Bake chamber
12: Processing space
20: Heating unit
30: gas supply unit
22: Support plate
24: Heater
222: plate body
224: Proximity pin
226: dam (dam)
26: Suction means
G1: First clearance
G2: Second gap

Claims (9)

A support plate on which the substrate is placed; And a heater for applying heat to the support plate,
The support plate
A plate body;
Proximal pins each protruding from an upper surface of the plate body and forming a first gap between the plate body and the substrate supported and supported by the substrate;
And a partial shielding means between the edge of the substrate supported by the proximity pins and the edge of the plate body to form a second gap reduced relative to the first gap.
Heating unit for bake process. The method according to claim 1,
The partial shielding means,
And a dam provided upward along the edge of the plate body,
Heating unit for bake process. The method according to claim 1 or 2,
Wherein the second gap is 20-40% of the first gap,
Heating unit for bake process. The method according to claim 1 or 2,
Wherein each of the proximity pins includes a heat insulating material in a part including at least a portion in contact with the substrate,
Heating unit for bake process. The method of claim 4,
Wherein each of the proximity pins has a portion, including a portion in contact with the substrate,
Heating unit for bake process. The method of claim 4,
Wherein each of the proximity pins has a contact member in contact with the substrate, the contact member is made of the heat insulating material,
Heating unit for bake process. The method according to claim 1,
Wherein the plate body is provided with at least one suction hole for providing a suction force to the substrate supported by the proximity pins to prevent warpage of the substrate,
Heating unit for bake process. A bake chamber for providing a processing space for the bake process;
A support plate disposed in the processing space and on which the substrate is placed;
And a heater for applying heat to the support plate,
The support plate
A plate body;
Proximal pins each protruding from an upper surface of the plate body and forming a first gap between the plate body and the substrate supported and supported by the substrate;
And a partial shielding means between the edge of the substrate supported by the proximity pins and the edge of the plate body to form a second gap reduced relative to the first gap.
Bake device. The method of claim 8,
Further comprising a gas supply unit for supplying heated gas to the processing space,
Bake device.

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