CN100461475C - 形成低温生长缓冲层的方法、以及制造发光元件的方法 - Google Patents

形成低温生长缓冲层的方法、以及制造发光元件的方法 Download PDF

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CN100461475C
CN100461475C CNB2006100670051A CN200610067005A CN100461475C CN 100461475 C CN100461475 C CN 100461475C CN B2006100670051 A CNB2006100670051 A CN B2006100670051A CN 200610067005 A CN200610067005 A CN 200610067005A CN 100461475 C CN100461475 C CN 100461475C
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buffer layer
substrate
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CN1841800A (zh
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牛田泰久
筱田大辅
山崎大辅
平田宏治
池本由平
柴田直树
青木和夫
恩卡纳西翁·安东尼亚·加西亚·比略拉
岛村清史
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Koha Co Ltd
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Toyoda Gosei Co Ltd
Koha Co Ltd
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
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    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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    • H10H20/01—Manufacture or treatment
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    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
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    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
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    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
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    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
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    • A01K63/00—Receptacles for live fish, e.g. aquaria; Terraria
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    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
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CNB2006100670051A 2005-03-31 2006-03-31 形成低温生长缓冲层的方法、以及制造发光元件的方法 Expired - Fee Related CN100461475C (zh)

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Application Number Priority Date Filing Date Title
JP2005101603 2005-03-31
JP2005101603 2005-03-31
JP2006016988 2006-01-25
JP2006016988A JP5159040B2 (ja) 2005-03-31 2006-01-25 低温成長バッファ層の形成方法および発光素子の製造方法

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CN1841800A CN1841800A (zh) 2006-10-04
CN100461475C true CN100461475C (zh) 2009-02-11

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US (1) US7524741B2 (https=)
JP (1) JP5159040B2 (https=)
KR (1) KR100887470B1 (https=)
CN (1) CN100461475C (https=)
DE (1) DE102006000150B4 (https=)
TW (1) TWI317178B (https=)

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JP2009227545A (ja) * 2008-03-25 2009-10-08 Nippon Light Metal Co Ltd 光デバイス用基板及びその製造方法
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JP5529420B2 (ja) * 2009-02-09 2014-06-25 住友電気工業株式会社 エピタキシャルウエハ、窒化ガリウム系半導体デバイスを作製する方法、窒化ガリウム系半導体デバイス、及び酸化ガリウムウエハ
JP5378829B2 (ja) * 2009-02-19 2013-12-25 住友電気工業株式会社 エピタキシャルウエハを形成する方法、及び半導体素子を作製する方法
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JP5706696B2 (ja) * 2011-01-06 2015-04-22 株式会社タムラ製作所 発光素子の製造方法及び発光素子
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CN103173738A (zh) * 2013-03-22 2013-06-26 新疆大学 一种Ga空位可调的GaN纳米结构的制备方法
JP5734362B2 (ja) * 2013-07-12 2015-06-17 株式会社タムラ製作所 半導体積層構造体及び半導体素子
CN105261683B (zh) * 2015-11-03 2017-10-10 湘能华磊光电股份有限公司 一种提高led外延晶体质量的外延生长方法
US10731274B2 (en) * 2016-06-24 2020-08-04 Stanley Electric Co., Ltd. Group III nitride laminate and vertical semiconductor device having the laminate
CN109378371B (zh) * 2018-10-17 2020-10-09 湘能华磊光电股份有限公司 Led外延片生长方法
CN109378377B (zh) * 2018-10-17 2020-06-23 湘能华磊光电股份有限公司 Led外延生长方法
WO2020194763A1 (ja) * 2019-03-28 2020-10-01 日本碍子株式会社 半導体膜
UA124713C2 (uk) * 2019-10-03 2021-11-03 Юрій Юрійович Синиця Акваріум з підсвічуванням
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JP5159040B2 (ja) 2013-03-06
CN1841800A (zh) 2006-10-04
DE102006000150A1 (de) 2006-11-30
US20060223287A1 (en) 2006-10-05
KR100887470B1 (ko) 2009-03-10
US7524741B2 (en) 2009-04-28
KR20060105546A (ko) 2006-10-11
JP2006310765A (ja) 2006-11-09
DE102006000150B4 (de) 2018-02-08
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