CN100460921C - 折射反射光学系统和具有该折射反射光学系统的曝光装置 - Google Patents

折射反射光学系统和具有该折射反射光学系统的曝光装置 Download PDF

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Publication number
CN100460921C
CN100460921C CNB018178618A CN01817861A CN100460921C CN 100460921 C CN100460921 C CN 100460921C CN B018178618 A CNB018178618 A CN B018178618A CN 01817861 A CN01817861 A CN 01817861A CN 100460921 C CN100460921 C CN 100460921C
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China
Prior art keywords
optical system
lens
mentioned
reticle
imaging optical
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Expired - Fee Related
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CNB018178618A
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English (en)
Chinese (zh)
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CN1535392A (zh
Inventor
高桥友刀
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Nikon Corp
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Nikon Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0836—Catadioptric systems using more than three curved mirrors
    • G02B17/0844—Catadioptric systems using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB018178618A 2000-10-23 2001-10-23 折射反射光学系统和具有该折射反射光学系统的曝光装置 Expired - Fee Related CN100460921C (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2000322068 2000-10-23
JP322068/00 2000-10-23
JP322068/2000 2000-10-23
JP3200/2001 2001-01-11
JP2001003200 2001-01-11
JP3200/01 2001-01-11
JP2001309516A JP4245286B2 (ja) 2000-10-23 2001-10-05 反射屈折光学系および該光学系を備えた露光装置
JP309516/2001 2001-10-05
JP309516/01 2001-10-05

Publications (2)

Publication Number Publication Date
CN1535392A CN1535392A (zh) 2004-10-06
CN100460921C true CN100460921C (zh) 2009-02-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018178618A Expired - Fee Related CN100460921C (zh) 2000-10-23 2001-10-23 折射反射光学系统和具有该折射反射光学系统的曝光装置

Country Status (8)

Country Link
US (1) US7030965B2 (https=)
EP (1) EP1336887A4 (https=)
JP (1) JP4245286B2 (https=)
KR (1) KR100799418B1 (https=)
CN (1) CN100460921C (https=)
AU (1) AU2001295994A1 (https=)
TW (1) TW529080B (https=)
WO (1) WO2002035273A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI911022B (zh) * 2024-03-19 2026-01-01 宏達國際電子股份有限公司 光學裝置及光學方法

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WO2008087827A1 (ja) * 2007-01-16 2008-07-24 Nikon Corporation 結像光学系、露光装置、およびデバイス製造方法
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WO2008104192A1 (en) * 2007-02-28 2008-09-04 Carl Zeiss Smt Ag Catadioptric projection objective with pupil correction
US20080259304A1 (en) * 2007-04-20 2008-10-23 Asml Netherlands B.V. Lithographic apparatus and method
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
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JP5567098B2 (ja) * 2012-10-31 2014-08-06 カール・ツァイス・エスエムティー・ゲーエムベーハー 瞳補正を有する反射屈折投影対物系
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JP2015132843A (ja) * 2015-03-02 2015-07-23 株式会社ニコン 投影光学系、露光装置、露光方法、およびデバイス製造方法
JP6358242B2 (ja) * 2015-11-30 2018-07-18 株式会社ニコン 露光装置、露光方法、デバイス製造方法およびパターン形成方法
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JP2018010303A (ja) * 2017-08-03 2018-01-18 株式会社ニコン 露光装置およびデバイス製造方法
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Publication number Publication date
KR20030045130A (ko) 2003-06-09
EP1336887A4 (en) 2008-07-09
CN1535392A (zh) 2004-10-06
WO2002035273A1 (en) 2002-05-02
KR100799418B1 (ko) 2008-01-30
JP2002277742A (ja) 2002-09-25
AU2001295994A1 (en) 2002-05-06
JP4245286B2 (ja) 2009-03-25
EP1336887A1 (en) 2003-08-20
US7030965B2 (en) 2006-04-18
TW529080B (en) 2003-04-21
US20040130806A1 (en) 2004-07-08

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