CN100435286C - 形成纳米簇电荷存储器件的方法 - Google Patents

形成纳米簇电荷存储器件的方法 Download PDF

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Publication number
CN100435286C
CN100435286C CNB2005800210850A CN200580021085A CN100435286C CN 100435286 C CN100435286 C CN 100435286C CN B2005800210850 A CNB2005800210850 A CN B2005800210850A CN 200580021085 A CN200580021085 A CN 200580021085A CN 100435286 C CN100435286 C CN 100435286C
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layer
gate material
conductive gate
grid
material layer
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Chinese (zh)
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CN101010785A (zh
Inventor
拉杰施·A.·劳
拉马钱德兰·穆拉利德哈
罗伯特·F.·斯蒂姆勒
高里山卡尔·L.·钦达罗尔
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NXP USA Inc
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Freescale Semiconductor Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
CNB2005800210850A 2004-06-25 2005-05-11 形成纳米簇电荷存储器件的方法 Expired - Fee Related CN100435286C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/876,820 2004-06-25
US10/876,820 US7091130B1 (en) 2004-06-25 2004-06-25 Method of forming a nanocluster charge storage device

Publications (2)

Publication Number Publication Date
CN101010785A CN101010785A (zh) 2007-08-01
CN100435286C true CN100435286C (zh) 2008-11-19

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CNB2005800210850A Expired - Fee Related CN100435286C (zh) 2004-06-25 2005-05-11 形成纳米簇电荷存储器件的方法

Country Status (6)

Country Link
US (1) US7091130B1 (enExample)
EP (1) EP1759405A4 (enExample)
JP (1) JP2008504679A (enExample)
CN (1) CN100435286C (enExample)
TW (1) TWI375318B (enExample)
WO (1) WO2006007069A2 (enExample)

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US20060131633A1 (en) * 2004-12-21 2006-06-22 Micron Technology, Inc. Integrated two device non-volatile memory
US7183159B2 (en) * 2005-01-14 2007-02-27 Freescale Semiconductor, Inc. Method of forming an integrated circuit having nanocluster devices and non-nanocluster devices
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7572695B2 (en) 2005-05-27 2009-08-11 Micron Technology, Inc. Hafnium titanium oxide films
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7575978B2 (en) * 2005-08-04 2009-08-18 Micron Technology, Inc. Method for making conductive nanoparticle charge storage element
US7410910B2 (en) 2005-08-31 2008-08-12 Micron Technology, Inc. Lanthanum aluminum oxynitride dielectric films
KR100698086B1 (ko) * 2005-12-29 2007-03-23 동부일렉트로닉스 주식회사 반도체소자의 제조방법
US7560769B2 (en) 2006-08-03 2009-07-14 Micron Technology, Inc. Non-volatile memory cell device and methods
US7955935B2 (en) 2006-08-03 2011-06-07 Micron Technology, Inc. Non-volatile memory cell devices and methods
US8093680B1 (en) * 2006-09-14 2012-01-10 Spansion Llc Metal-insulator-metal-insulator-metal (MIMIM) memory device
US7687349B2 (en) 2006-10-30 2010-03-30 Atmel Corporation Growth of silicon nanodots having a metallic coating using gaseous precursors
FR2910176B1 (fr) 2006-12-15 2009-10-23 Commissariat Energie Atomique Procede de realisation d'un dispositif a base de nanocristaux recouverts d'une couche de nitrure deposee par cvd
US7763511B2 (en) * 2006-12-29 2010-07-27 Intel Corporation Dielectric barrier for nanocrystals
US7816211B2 (en) * 2007-01-26 2010-10-19 Freescale Semiconductor, Inc. Method of making a semiconductor device having high voltage transistors, non-volatile memory transistors, and logic transistors
US20080269746A1 (en) * 2007-04-24 2008-10-30 Osteolign, Inc. Conformable intramedullary implant with nestable components
US9299568B2 (en) 2007-05-25 2016-03-29 Cypress Semiconductor Corporation SONOS ONO stack scaling
US8614124B2 (en) 2007-05-25 2013-12-24 Cypress Semiconductor Corporation SONOS ONO stack scaling
US8367506B2 (en) 2007-06-04 2013-02-05 Micron Technology, Inc. High-k dielectrics with gold nano-particles
US7846793B2 (en) * 2007-10-03 2010-12-07 Applied Materials, Inc. Plasma surface treatment for SI and metal nanocrystal nucleation
US9431549B2 (en) 2007-12-12 2016-08-30 Cypress Semiconductor Corporation Nonvolatile charge trap memory device having a high dielectric constant blocking region
US7871886B2 (en) * 2008-12-19 2011-01-18 Freescale Semiconductor, Inc. Nanocrystal memory with differential energy bands and method of formation
US7799634B2 (en) * 2008-12-19 2010-09-21 Freescale Semiconductor, Inc. Method of forming nanocrystals
US8071453B1 (en) 2009-04-24 2011-12-06 Cypress Semiconductor Corporation Method of ONO integration into MOS flow
US9102522B2 (en) 2009-04-24 2015-08-11 Cypress Semiconductor Corporation Method of ONO integration into logic CMOS flow
US8202778B2 (en) * 2010-08-31 2012-06-19 Freescale Semiconductor, Inc. Patterning a gate stack of a non-volatile memory (NVM) with simultaneous etch in non-NVM area
US8679912B2 (en) * 2012-01-31 2014-03-25 Freescale Semiconductor, Inc. Semiconductor device having different non-volatile memories having nanocrystals of differing densities and method therefor
US9230977B2 (en) 2013-06-21 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Embedded flash memory device with floating gate embedded in a substrate
US8883624B1 (en) 2013-09-27 2014-11-11 Cypress Semiconductor Corporation Integration of a memory transistor into high-K, metal gate CMOS process flow
JP5732574B2 (ja) * 2014-04-14 2015-06-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9218978B1 (en) * 2015-03-09 2015-12-22 Cypress Semiconductor Corporation Method of ONO stack formation
CN107978606B (zh) * 2017-11-20 2020-08-25 上海华力微电子有限公司 一种嵌入式闪存工艺集成方法
TWI704648B (zh) * 2019-11-20 2020-09-11 華邦電子股份有限公司 記憶體裝置的製造方法

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US20030222306A1 (en) * 2002-05-30 2003-12-04 Alexander Hoefler Method of forming a semiconductor device in a semiconductor layer and structure thereof

Also Published As

Publication number Publication date
WO2006007069A3 (en) 2007-04-12
WO2006007069A2 (en) 2006-01-19
US7091130B1 (en) 2006-08-15
TW200612548A (en) 2006-04-16
CN101010785A (zh) 2007-08-01
JP2008504679A (ja) 2008-02-14
US20060194438A1 (en) 2006-08-31
EP1759405A4 (en) 2008-11-12
TWI375318B (en) 2012-10-21
EP1759405A2 (en) 2007-03-07

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Termination date: 20160511