CN100423233C - 交叉点型存储器阵列 - Google Patents
交叉点型存储器阵列 Download PDFInfo
- Publication number
- CN100423233C CN100423233C CNB2004100397949A CN200410039794A CN100423233C CN 100423233 C CN100423233 C CN 100423233C CN B2004100397949 A CNB2004100397949 A CN B2004100397949A CN 200410039794 A CN200410039794 A CN 200410039794A CN 100423233 C CN100423233 C CN 100423233C
- Authority
- CN
- China
- Prior art keywords
- layer
- forms
- memory array
- connecting line
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015654 memory Effects 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 31
- 239000007772 electrode material Substances 0.000 claims description 20
- 229910052741 iridium Inorganic materials 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 238000000407 epitaxy Methods 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 8
- 150000003376 silicon Chemical class 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 description 26
- 238000000576 coating method Methods 0.000 description 26
- 238000005530 etching Methods 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000007639 printing Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 230000005621 ferroelectricity Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- -1 phosphonium ion Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- HODFCFXCOMKRCG-UHFFFAOYSA-N bitolterol mesylate Chemical compound CS([O-])(=O)=O.C1=CC(C)=CC=C1C(=O)OC1=CC=C(C(O)C[NH2+]C(C)(C)C)C=C1OC(=O)C1=CC=C(C)C=C1 HODFCFXCOMKRCG-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/391357 | 2003-03-17 | ||
US10/391,357 US6774004B1 (en) | 2003-03-17 | 2003-03-17 | Nano-scale resistance cross-point memory array |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1571140A CN1571140A (zh) | 2005-01-26 |
CN100423233C true CN100423233C (zh) | 2008-10-01 |
Family
ID=32824859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100397949A Expired - Lifetime CN100423233C (zh) | 2003-03-17 | 2004-03-17 | 交叉点型存储器阵列 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6774004B1 (zh) |
EP (1) | EP1463060B1 (zh) |
JP (1) | JP4883664B2 (zh) |
KR (1) | KR100613669B1 (zh) |
CN (1) | CN100423233C (zh) |
DE (1) | DE602004010859T2 (zh) |
TW (1) | TWI251904B (zh) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7350132B2 (en) | 2003-09-10 | 2008-03-25 | Hewlett-Packard Development Company, L.P. | Nanoscale interconnection interface |
US6962648B2 (en) * | 2003-09-15 | 2005-11-08 | Global Silicon Net Corp. | Back-biased face target sputtering |
US6955992B2 (en) * | 2003-09-30 | 2005-10-18 | Sharp Laboratories Of America, Inc. | One mask PT/PCMO/PT stack etching process for RRAM applications |
US7114240B2 (en) * | 2003-11-12 | 2006-10-03 | Honeywell International, Inc. | Method for fabricating giant magnetoresistive (GMR) devices |
US20060171200A1 (en) | 2004-02-06 | 2006-08-03 | Unity Semiconductor Corporation | Memory using mixed valence conductive oxides |
US7082052B2 (en) | 2004-02-06 | 2006-07-25 | Unity Semiconductor Corporation | Multi-resistive state element with reactive metal |
US7330369B2 (en) * | 2004-04-06 | 2008-02-12 | Bao Tran | NANO-electronic memory array |
US7169637B2 (en) * | 2004-07-01 | 2007-01-30 | Sharp Laboratories Of America, Inc. | One mask Pt/PCMO/Pt stack etching process for RRAM applications |
US7023008B1 (en) * | 2004-09-30 | 2006-04-04 | Infineon Technologies Ag | Resistive memory element |
US7339813B2 (en) * | 2004-09-30 | 2008-03-04 | Sharp Laboratories Of America, Inc. | Complementary output resistive memory cell |
US20060081467A1 (en) * | 2004-10-15 | 2006-04-20 | Makoto Nagashima | Systems and methods for magnetron deposition |
US7425504B2 (en) * | 2004-10-15 | 2008-09-16 | 4D-S Pty Ltd. | Systems and methods for plasma etching |
US20060081466A1 (en) * | 2004-10-15 | 2006-04-20 | Makoto Nagashima | High uniformity 1-D multiple magnet magnetron source |
US7544977B2 (en) * | 2006-01-27 | 2009-06-09 | Hewlett-Packard Development Company, L.P. | Mixed-scale electronic interface |
KR100682899B1 (ko) * | 2004-11-10 | 2007-02-15 | 삼성전자주식회사 | 저항 변화층을 스토리지 노드로 구비하는 메모리 소자의제조 방법 |
KR100607222B1 (ko) | 2004-12-29 | 2006-08-01 | 한양대학교 산학협력단 | 교차하는 전극 사이에 나노 결정체를 이용한 논리 소자또는 기억 소자 및 그 제조 방법 |
KR100697282B1 (ko) | 2005-03-28 | 2007-03-20 | 삼성전자주식회사 | 저항 메모리 셀, 그 형성 방법 및 이를 이용한 저항 메모리배열 |
US8565003B2 (en) | 2011-06-28 | 2013-10-22 | Unity Semiconductor Corporation | Multilayer cross-point memory array having reduced disturb susceptibility |
US20130082232A1 (en) | 2011-09-30 | 2013-04-04 | Unity Semiconductor Corporation | Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells |
US8270193B2 (en) | 2010-01-29 | 2012-09-18 | Unity Semiconductor Corporation | Local bit lines and methods of selecting the same to access memory elements in cross-point arrays |
US8937292B2 (en) | 2011-08-15 | 2015-01-20 | Unity Semiconductor Corporation | Vertical cross point arrays for ultra high density memory applications |
US8559209B2 (en) | 2011-06-10 | 2013-10-15 | Unity Semiconductor Corporation | Array voltage regulating technique to enable data operations on large cross-point memory arrays with resistive memory elements |
WO2007007606A1 (ja) * | 2005-07-11 | 2007-01-18 | Sharp Kabushiki Kaisha | 可変抵抗素子 |
US20070084717A1 (en) * | 2005-10-16 | 2007-04-19 | Makoto Nagashima | Back-biased face target sputtering based high density non-volatile caching data storage |
US20070084716A1 (en) * | 2005-10-16 | 2007-04-19 | Makoto Nagashima | Back-biased face target sputtering based high density non-volatile data storage |
US20070132049A1 (en) * | 2005-12-12 | 2007-06-14 | Stipe Barry C | Unipolar resistance random access memory (RRAM) device and vertically stacked architecture |
US20070205096A1 (en) * | 2006-03-06 | 2007-09-06 | Makoto Nagashima | Magnetron based wafer processing |
KR100706815B1 (ko) * | 2006-03-09 | 2007-04-12 | 삼성전자주식회사 | 전하 트랩막 패턴을 가진 비 휘발성 메모리 소자 및 그제조 방법 |
US8013711B2 (en) | 2006-03-09 | 2011-09-06 | Panasonic Corporation | Variable resistance element, semiconductor device, and method for manufacturing variable resistance element |
US8395199B2 (en) | 2006-03-25 | 2013-03-12 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
US7763932B2 (en) * | 2006-06-29 | 2010-07-27 | International Business Machines Corporation | Multi-bit high-density memory device and architecture and method of fabricating multi-bit high-density memory devices |
US8454810B2 (en) | 2006-07-14 | 2013-06-04 | 4D-S Pty Ltd. | Dual hexagonal shaped plasma source |
US20080011603A1 (en) * | 2006-07-14 | 2008-01-17 | Makoto Nagashima | Ultra high vacuum deposition of PCMO material |
US7932548B2 (en) | 2006-07-14 | 2011-04-26 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
US8308915B2 (en) | 2006-09-14 | 2012-11-13 | 4D-S Pty Ltd. | Systems and methods for magnetron deposition |
CN100578736C (zh) * | 2007-03-01 | 2010-01-06 | 中国科学院金属研究所 | 一种刻蚀基板法外延定向生长氮化物纳米片网格的方法 |
JP4625822B2 (ja) * | 2007-03-16 | 2011-02-02 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
KR100819560B1 (ko) * | 2007-03-26 | 2008-04-08 | 삼성전자주식회사 | 상전이 메모리소자 및 그 제조방법 |
US7704788B2 (en) * | 2007-04-06 | 2010-04-27 | Samsung Electronics Co., Ltd. | Methods of fabricating multi-bit phase-change memory devices and devices formed thereby |
KR101350979B1 (ko) | 2007-05-11 | 2014-01-14 | 삼성전자주식회사 | 저항성 메모리 소자 및 그 제조 방법 |
US8476686B2 (en) | 2008-07-09 | 2013-07-02 | Infineon Technologies Ag | Memory device and method for making same |
US8638584B2 (en) * | 2010-02-02 | 2014-01-28 | Unity Semiconductor Corporation | Memory architectures and techniques to enhance throughput for cross-point arrays |
US8737113B2 (en) | 2010-02-08 | 2014-05-27 | Hewlett-Packard Development Company, L.P. | Memory resistor having multi-layer electrodes |
CN101826546B (zh) * | 2010-04-06 | 2011-10-05 | 中国科学院上海微系统与信息技术研究所 | 纳米级侧壁限制电阻转换存储器单元及制造方法 |
US20120094499A1 (en) * | 2010-10-15 | 2012-04-19 | Siu Tang Ng | Method of performing an in situ chamber clean |
US10566056B2 (en) | 2011-06-10 | 2020-02-18 | Unity Semiconductor Corporation | Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations |
US8891276B2 (en) | 2011-06-10 | 2014-11-18 | Unity Semiconductor Corporation | Memory array with local bitlines and local-to-global bitline pass gates and gain stages |
US9117495B2 (en) | 2011-06-10 | 2015-08-25 | Unity Semiconductor Corporation | Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations |
US9548095B2 (en) * | 2014-08-20 | 2017-01-17 | Everspin Technologies, Inc. | Redundant magnetic tunnel junctions in magnetoresistive memory |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4650544A (en) * | 1985-04-19 | 1987-03-17 | Advanced Micro Devices, Inc. | Shallow groove capacitor fabrication method |
US20030001178A1 (en) * | 2001-06-28 | 2003-01-02 | Hsu Sheng Teng | Low cross-talk electrically programmable resistance cross point memory |
US20030003675A1 (en) * | 2001-06-28 | 2003-01-02 | Hsu Sheng Teng | Shared bit line cross point memory array |
US6531373B2 (en) * | 2000-12-27 | 2003-03-11 | Ovonyx, Inc. | Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements |
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US4983534A (en) * | 1988-01-05 | 1991-01-08 | Nec Corporation | Semiconductor device and method of manufacturing the same |
US5477482A (en) * | 1993-10-01 | 1995-12-19 | The United States Of America As Represented By The Secretary Of The Navy | Ultra high density, non-volatile ferromagnetic random access memory |
JPH07131009A (ja) * | 1993-11-04 | 1995-05-19 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH0851203A (ja) * | 1994-08-08 | 1996-02-20 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2000306221A (ja) * | 1999-04-22 | 2000-11-02 | Nec Corp | 磁気抵抗効果ヘッドおよびその製造方法 |
US6506643B1 (en) * | 1999-06-11 | 2003-01-14 | Sharp Laboratories Of America, Inc. | Method for forming a damascene FeRAM cell structure |
DE10020128A1 (de) * | 2000-04-14 | 2001-10-18 | Infineon Technologies Ag | MRAM-Speicher |
JP3940883B2 (ja) * | 2000-09-18 | 2007-07-04 | セイコーエプソン株式会社 | 強誘電体メモリ装置の製造方法 |
US6794694B2 (en) * | 2000-12-21 | 2004-09-21 | Agere Systems Inc. | Inter-wiring-layer capacitors |
US6358756B1 (en) * | 2001-02-07 | 2002-03-19 | Micron Technology, Inc. | Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme |
US6440752B1 (en) * | 2001-03-26 | 2002-08-27 | Sharp Laboratories Of America, Inc. | Electrode materials with improved hydrogen degradation resistance and fabrication method |
US6531371B2 (en) * | 2001-06-28 | 2003-03-11 | Sharp Laboratories Of America, Inc. | Electrically programmable resistance cross point memory |
KR100423906B1 (ko) * | 2001-08-08 | 2004-03-22 | 삼성전자주식회사 | 강유전성 메모리 장치 및 그 제조방법 |
KR100355662B1 (ko) * | 2001-08-25 | 2002-10-11 | 최웅림 | 반도체 비휘발성 메모리 및 어레이 그리고 그것의 동작 방법 |
JP2003078185A (ja) * | 2001-09-03 | 2003-03-14 | Nec Corp | 強磁性トンネル接合構造及びその製造方法並びに該強磁性トンネル接合を用いた磁気メモリ |
JP4618989B2 (ja) * | 2003-02-18 | 2011-01-26 | 三菱電機株式会社 | 磁気記憶半導体装置 |
-
2003
- 2003-03-17 US US10/391,357 patent/US6774004B1/en not_active Expired - Lifetime
-
2004
- 2004-03-12 JP JP2004071736A patent/JP4883664B2/ja not_active Expired - Lifetime
- 2004-03-15 EP EP04251472A patent/EP1463060B1/en not_active Expired - Lifetime
- 2004-03-15 DE DE602004010859T patent/DE602004010859T2/de not_active Expired - Lifetime
- 2004-03-17 CN CNB2004100397949A patent/CN100423233C/zh not_active Expired - Lifetime
- 2004-03-17 KR KR1020040018084A patent/KR100613669B1/ko active IP Right Grant
- 2004-03-17 TW TW093107096A patent/TWI251904B/zh not_active IP Right Cessation
- 2004-07-29 US US10/909,218 patent/US7141481B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4650544A (en) * | 1985-04-19 | 1987-03-17 | Advanced Micro Devices, Inc. | Shallow groove capacitor fabrication method |
US6531373B2 (en) * | 2000-12-27 | 2003-03-11 | Ovonyx, Inc. | Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements |
US20030001178A1 (en) * | 2001-06-28 | 2003-01-02 | Hsu Sheng Teng | Low cross-talk electrically programmable resistance cross point memory |
US20030003675A1 (en) * | 2001-06-28 | 2003-01-02 | Hsu Sheng Teng | Shared bit line cross point memory array |
Also Published As
Publication number | Publication date |
---|---|
JP4883664B2 (ja) | 2012-02-22 |
DE602004010859T2 (de) | 2008-12-11 |
US20050009286A1 (en) | 2005-01-13 |
EP1463060A2 (en) | 2004-09-29 |
TW200507179A (en) | 2005-02-16 |
KR20040082334A (ko) | 2004-09-24 |
DE602004010859D1 (de) | 2008-02-07 |
EP1463060A3 (en) | 2005-06-15 |
US6774004B1 (en) | 2004-08-10 |
CN1571140A (zh) | 2005-01-26 |
KR100613669B1 (ko) | 2006-08-21 |
TWI251904B (en) | 2006-03-21 |
JP2004311969A (ja) | 2004-11-04 |
EP1463060B1 (en) | 2007-12-26 |
US7141481B2 (en) | 2006-11-28 |
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