CN100416846C - Cmos图像传感器及其制造方法 - Google Patents
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Abstract
本发明提供了一种COMS图像传感器及其制造方法，其中，在形成微透镜的同时形成焊盘开口。该COMS图像传感器包括沉积在氧化物层上、用于钝化的氮化物层，其中，从在氮化物层上形成的牺牲微透镜层形成具有微透镜结构的牺牲微透镜，并且其中，在形牺牲微透镜之后，氮化物层被转移蚀刻，使氮化物层具有牺牲微透镜的微透镜结构。
Description
本申请要求于2004年12月30日提交的韩国专利申请第10-2004-0116478号的优先权，其全部内容结合于此作为参考。
技术领域
本发明涉及互补型金属氧化物半导体(COMS)图像传感器，并且更特别地，涉及一种COMS图像传感器及其制造方法，其中在形成微透镜的同时形成焊盘开口。
背景技术
图1-6分别示出用于制造根据相关技术的COMS图像传感器的方法的顺序处理步骤。
如图1所示，示出了单位像素区域和焊盘的外围区域，通过选择性地向硅衬底中注入硼离子来形成P-阱50和N-阱。通过使用器件介电处理填充沟槽来形成场氧化物层60，然后根据期望的阈电压形成期望厚度的栅氧化物层(未示出)。在栅氧化物层上形成将被用作栅电极的多晶硅层40和钨硅化物层80。然后，多晶硅层40和钨硅化物层80被有选择地蚀刻，以形成器件的栅电极。随后，通过选择性离子注入，在硅衬底中形成N-型离子注入区20和P-型离子注入区10，以形成光电二极管。这些阱被轻掺杂，以形成轻掺杂的漏结构的源极区和漏极区。通过低压化学气相沉积来沉积正硅酸四乙酯氧化物层(tetra-ethyl-ortho-silicate oxide layer)或氮化硅(SiN)层。正硅酸四乙酯氧化物层或氮化硅层被深蚀刻，以在栅电极的侧壁上形成隔离件70。然后，通过重掺杂硅衬底形成N-型连接区30和P-型连接区，以形成源极区和漏极区。
如图2所示，通过低压化学气相沉积，形成将被用作前金属(pre-metal)介电(PMD)层90的、厚度为1000的正硅酸四乙酯氧化物层。通过高压化学气相沉积，在正硅酸四乙酯氧化物层上形成硼磷硅酸盐玻璃层(borophosphate-silicate-glass layer)。然后对硼磷硅酸盐玻璃层进行热处理以使其流动。然后，通过选择性地蚀刻PMD层90，形成预定连接区和使栅电极暴露的接触孔100。随后，分别沉积并选择性地蚀刻起粘合层作用的钛层110、用于互连的铝层120、以及非反射氮化钛(TiN)层130，以形成第一金属线。通过等离子蚀刻处理形成接触孔100。
如图3所示，通过等离子体辅助化学气相沉积，形成正硅酸四乙酯氧化物层150和旋涂玻璃(spin-on-glass)氧化物层140。然后，对正硅酸四乙酯氧化物层150和旋涂玻璃氧化物层140进行热处理和平面化。接下来，通过等离子体辅助化学气相沉积，在正硅酸四乙酯氧化物层150和旋涂玻璃氧化物层140上沉积氧化物层，以形成第一IMD层160。
如图4所示，通过选择性地蚀刻第一IMD层160形成通孔。通过等离子蚀刻处理沉积和蚀刻钛层、铝层、以及氮化钛层，以形成第二金属线。随后以与第一IMD层90相同的方式形成另一正硅酸四乙酯氧化物层、另一旋涂玻璃氧化物层、以及另一氧化物层，以形成第二PMD层。上述步骤根据所需的金属线层的数量重复进行。
如图5所示，在形成最上部金属线层之后，通过等离子体辅助化学气相沉积，沉积厚度为8000的、起器件钝化层作用的氧化物层。通过焊盘开口处理，使焊盘区域周围的金属层暴露，使得金属可以作为电极端子使用。换言之，蚀刻用于器件钝化层的氧化物层以及氮化钛层，以形成焊盘开口。
如图6所示，形成滤色器阵列层170并在其上形成平面化层180。然后，在平面化层180上形成微透镜层190。即，在根据上述相关技术的CMOS图像传感器中，在形成用于钝化的氮化物层之后，形成滤色器阵列和微透镜层。然而，在这种情况下，所得到的制造的器件的布局太大而不能获得高质量图像。
发明内容
因此，本发明涉及一种CMOS图像传感器及其制造方法，其能够基本上克服由于相关技术的限制和缺点导致的一个或多个问题。
本发明的目的在于提供一种COMS图像传感器及其制造方法，其中，在形成微透镜的同时形成焊盘开口。
本发明的其它优点、目的和特征将至少部分地在随后的说明书中阐述，部分地在本领域普通技术人员验证以下内容的基础上变得显而易见，或者通过实施本发明而了解。本发明的目的和其它优点可通过在说明书、权利要求、以及附图中所特别指出的结构来实现和达到。
为了实现根据本发明的这些目的和其它优点，如本文中具体和概括描述的，提供了一种包括沉积在氧化物层上、用于钝化的氮化物层的COMS图像传感器，其中，从在氮化物层上形成的牺牲微透镜层形成具有微透镜结构的牺牲微透镜，并且其中，在形成牺牲微透镜之后，转移蚀刻氮化物层，以使氮化物层具有牺牲微透镜的微透镜结构，并且在形成微透镜结构的同时形成焊盘开口。
本发明的另一方面，提供了一种制造COMS图像传感器的方法，该方法包括：在氧化物层上沉积用于钝化的氮化物层；在氮化物层上形成牺牲微透镜层；从牺牲微透镜层形成牺牲微透镜；以及通过转移蚀刻处理，使第二氮化物层形成牺牲微透镜的形状，同时形成焊盘开口(pad opening)。
应该明白，本发明的以上概括描述和以下详细描述均是示范性和说明性的，目的在于提供对所主张的发明的进一步的说明。
附图说明
附图提供了对本发明的进一步理解，其被结合到本申请中并构成本申请的一部分，本发明的示范性实施例和说明书一起用来说明本发明的原理。在附图中：
图1-6是现有的COMS图像传感器的横截面图，分别示出用于制造根据相关技术的CMOS图像传感器的方法的顺序处理步骤；以及
图7-10是根据本发明的COMS图像传感器的横截面图，分别示出根据本发明的用于制造CMOS图像传感器的方法的顺序处理步骤。
具体实施方式
以下将详细描述本发明的优选实施例，其实例在附图中示出。在附图中将尽可能使用相同的附图标号来表示相同或相似的部件。
图7-10分别示出根据本发明的用于制造CMOS图像传感器的方法的顺序处理步骤。
如图7所示，形成光电二极管200，并在光电二极管200上形成层间介电(ILD)层。在ILD层上形成第一金属层210。第一金属层210通过电极与光电二极管200连接。在第一金属层210上形成第一金属间介电(IMD)层220。在第一IMD层220上形成第二个金属层230。在第二金属层230上形成第二IMD层240。在第二IMD层240上形成上金属层250。在上金属层250上形成其中焊盘被开口的氧化物层260。在氧化物层260上形成用于钝化的氮化物层270。应该注意，焊盘被开口的部分形成在氧化物层260和氮化物层270中。
如图8所示，在氮化物层270上形成牺牲微透镜层280。应该注意，甚至在焊盘被开口的部分中形成牺牲微透镜层280。
如图9所示，从牺牲微透镜层280形成牺牲微透镜290。应该注意，如图8所示，即使牺牲微透镜层280甚至形成在焊盘被开口的部分中，焊盘被开口的部分仍处于与图7相同的状态。
如图10所示，通过“转移”蚀刻处理，使氮化物层270具有与牺牲微透镜290的形状相同的形状，由此牺牲微透镜被整个去除。同时，氮化物层270被蚀刻以暴露焊盘。氮化物层270和牺牲微透镜290按1∶1的干蚀刻比例被蚀刻。牺牲微透镜层280仅形成在像素阵列中，使得当形成微透镜300时，氮化物层270的焊盘自动开口。
在如上述制造的CMOS图像传感器的结构中，在氧化物层260上沉积用于钝化的氮化物层270，并形成牺牲微透镜290。然后，使用转移蚀刻处理蚀刻氮化物层270和牺牲微透镜290。即，在氮化物层270上形成牺牲微透镜层280，并从牺牲微透镜层280形成牺牲微透镜290。换句话说，从在氮化物层270上形成的牺牲微透镜层280，形成具有对应于期望微透镜300的微透镜结构的牺牲微透镜290。然后，在形成牺牲微透镜290之后，转移蚀刻氮化物层270以及牺牲微透镜，以使氮化物层具有牺牲微透镜的微透镜结构。
通过采用COMS图像传感器及其制造方法，在形成微透镜的同时形成焊盘开口。因此，可以减小由于在形成用于钝化的氮化物层之后形成滤色器阵列和微透镜的布局，从而改善图像质量。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (8)
1. 一种COMS图像传感器，包括：
用于钝化的氮化物层，沉积在氧化物层上；
其中，从在所述氮化物层上形成的牺牲微透镜层形成具有微透镜结构的牺牲微透镜，并且其中，在形成所述牺牲微透镜之后，所述氮化物层被转移蚀刻，以使所述氮化物层具有所述牺牲微透镜的微透镜结构，在形成所述微透镜结构的同时形成焊盘开口。
2. 根据权利要求1所述的CMOS图像传感器，其中，焊盘在氧化物层中被开口。
3. 根据权利要求1所述的CMOS图像传感器，其中，所述微透镜层在焊盘被开口的部分中形成。
4. 根据权利要求1所述的CMOS图像传感器，其中，所述氮化物层和所述牺牲微透镜按照1∶1的干蚀刻比例被蚀刻。
5. 一种用于制造COMS图像传感器的方法，包括：
在氧化物层上沉积用于钝化的氮化物层；
在所述氮化物层上形成牺牲微透镜层；
从所述牺牲微透镜层形成牺牲微透镜，同时形成焊盘开口；以及
通过转移蚀刻处理，使第二氮化物层形成所述牺牲微透镜的形状。
6. 根据权利要求5所述的用于制造COMS图像传感器的方法，其中，焊盘在所述氧化物层中被开口。
7. 根据权利要求5所述的用于制造COMS图像传感器的方法，其中，在焊盘被开口的部分形成微透镜层。
8. 根据权利要求5所述的用于制造COMS图像传感器的方法，其中，所述氮化物层和所述牺牲微透镜以1∶1的干蚀刻比例被蚀刻。
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| KR (1) | KR100640958B1 (zh) |
| CN (2) | CN101320746B (zh) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101197320B (zh) * | 2006-12-05 | 2010-05-12 | 中芯国际集成电路制造(上海)有限公司 | Cmos图像传感器和cmos图像传感器的制造方法 |
| KR100857999B1 (ko) * | 2006-12-28 | 2008-09-10 | 동부일렉트로닉스 주식회사 | 씨모스 이미지센서 및 그 제조방법 |
| KR100806781B1 (ko) * | 2006-12-29 | 2008-02-27 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조 방법 |
| US7755120B2 (en) * | 2007-01-22 | 2010-07-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device |
| KR100920541B1 (ko) * | 2007-12-21 | 2009-10-08 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조 방법 |
| KR101038851B1 (ko) | 2008-11-05 | 2011-06-02 | 주식회사 동부하이텍 | 이미지 센서 및 이의 제조 방법 |
| JP2011023409A (ja) * | 2009-07-13 | 2011-02-03 | Panasonic Corp | 固体撮像装置 |
| CN104865619B (zh) | 2015-06-05 | 2016-08-24 | 京东方科技集团股份有限公司 | 一种防反射膜、其制作方法、显示面板及显示装置 |
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- 2005-12-30 CN CN2008101335721A patent/CN101320746B/zh not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| KR100640958B1 (ko) | 2006-11-02 |
| CN101320746B (zh) | 2010-06-09 |
| CN101320746A (zh) | 2008-12-10 |
| CN1822374A (zh) | 2006-08-23 |
| KR20060077575A (ko) | 2006-07-05 |
| US20060148122A1 (en) | 2006-07-06 |
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