KR100640958B1 - 보호막을 이용한 씨모스 이미지 센서 및 그 제조방법 - Google Patents

보호막을 이용한 씨모스 이미지 센서 및 그 제조방법 Download PDF

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Publication number
KR100640958B1
KR100640958B1 KR1020040116478A KR20040116478A KR100640958B1 KR 100640958 B1 KR100640958 B1 KR 100640958B1 KR 1020040116478 A KR1020040116478 A KR 1020040116478A KR 20040116478 A KR20040116478 A KR 20040116478A KR 100640958 B1 KR100640958 B1 KR 100640958B1
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KR
South Korea
Prior art keywords
image sensor
film
cmos image
micro lens
layer
Prior art date
Application number
KR1020040116478A
Other languages
English (en)
Korean (ko)
Other versions
KR20060077575A (ko
Inventor
한창훈
Original Assignee
동부일렉트로닉스 주식회사
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Application filed by 동부일렉트로닉스 주식회사 filed Critical 동부일렉트로닉스 주식회사
Priority to KR1020040116478A priority Critical patent/KR100640958B1/ko
Priority to US11/319,597 priority patent/US20060148122A1/en
Priority to CNB2005100971177A priority patent/CN100416846C/zh
Priority to CN2008101335721A priority patent/CN101320746B/zh
Publication of KR20060077575A publication Critical patent/KR20060077575A/ko
Application granted granted Critical
Publication of KR100640958B1 publication Critical patent/KR100640958B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020040116478A 2004-12-30 2004-12-30 보호막을 이용한 씨모스 이미지 센서 및 그 제조방법 KR100640958B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020040116478A KR100640958B1 (ko) 2004-12-30 2004-12-30 보호막을 이용한 씨모스 이미지 센서 및 그 제조방법
US11/319,597 US20060148122A1 (en) 2004-12-30 2005-12-29 CMOS image sensor and method for manufacturing the same
CNB2005100971177A CN100416846C (zh) 2004-12-30 2005-12-30 Cmos图像传感器及其制造方法
CN2008101335721A CN101320746B (zh) 2004-12-30 2005-12-30 Cmos图像传感器及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040116478A KR100640958B1 (ko) 2004-12-30 2004-12-30 보호막을 이용한 씨모스 이미지 센서 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20060077575A KR20060077575A (ko) 2006-07-05
KR100640958B1 true KR100640958B1 (ko) 2006-11-02

Family

ID=36641010

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040116478A KR100640958B1 (ko) 2004-12-30 2004-12-30 보호막을 이용한 씨모스 이미지 센서 및 그 제조방법

Country Status (3)

Country Link
US (1) US20060148122A1 (zh)
KR (1) KR100640958B1 (zh)
CN (2) CN100416846C (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100806781B1 (ko) * 2006-12-29 2008-02-27 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조 방법
KR101038851B1 (ko) 2008-11-05 2011-06-02 주식회사 동부하이텍 이미지 센서 및 이의 제조 방법

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* Cited by examiner, † Cited by third party
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CN101197320B (zh) * 2006-12-05 2010-05-12 中芯国际集成电路制造(上海)有限公司 Cmos图像传感器和cmos图像传感器的制造方法
KR100857999B1 (ko) * 2006-12-28 2008-09-10 동부일렉트로닉스 주식회사 씨모스 이미지센서 및 그 제조방법
US7755120B2 (en) * 2007-01-22 2010-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
KR100920541B1 (ko) * 2007-12-21 2009-10-08 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
JP2011023409A (ja) * 2009-07-13 2011-02-03 Panasonic Corp 固体撮像装置
CN104865619B (zh) * 2015-06-05 2016-08-24 京东方科技集团股份有限公司 一种防反射膜、其制作方法、显示面板及显示装置

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EP0576144B1 (en) * 1992-05-22 1998-08-05 Matsushita Electronics Corporation Solid state image sensor and manufacturing method thereof
JP2950714B2 (ja) * 1993-09-28 1999-09-20 シャープ株式会社 固体撮像装置およびその製造方法
US5929962A (en) * 1998-02-03 1999-07-27 International Business Machines Corporation Method and apparatus for integrating microlens array into a liquid crystal display device using a sacrificial substrate
NL1011381C2 (nl) * 1998-02-28 2000-02-15 Hyundai Electronics Ind Fotodiode voor een CMOS beeldsensor en werkwijze voor het vervaardigen daarvan.
US5853960A (en) * 1998-03-18 1998-12-29 Trw Inc. Method for producing a micro optical semiconductor lens
US6069087A (en) * 1998-08-25 2000-05-30 Micron Technology, Inc. Highly selective dry etching process
US6137634A (en) * 1999-02-01 2000-10-24 Intel Corporation Microlens array
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US6221687B1 (en) * 1999-12-23 2001-04-24 Tower Semiconductor Ltd. Color image sensor with embedded microlens array
KR100533166B1 (ko) * 2000-08-18 2005-12-02 매그나칩 반도체 유한회사 마이크로렌즈 보호용 저온산화막을 갖는 씨모스이미지센서및 그 제조방법
JP3759435B2 (ja) * 2001-07-11 2006-03-22 ソニー株式会社 Ｘ−ｙアドレス型固体撮像素子
JP3789365B2 (ja) * 2002-01-31 2006-06-21 シャープ株式会社 層内レンズ付き半導体装置およびその製造方法
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KR100606936B1 (ko) * 2004-10-18 2006-08-02 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그의 제조 방법
KR100649012B1 (ko) * 2004-12-30 2006-11-27 동부일렉트로닉스 주식회사 색재현성 향상을 위한 씨모스 이미지 센서 및 그 제조방법
KR100606922B1 (ko) * 2004-12-30 2006-08-01 동부일렉트로닉스 주식회사 보호막을 이용한 씨모스 이미지 센서 및 그 제조방법
KR100606919B1 (ko) * 2004-12-30 2006-08-01 동부일렉트로닉스 주식회사 컬러필터 물질을 채우기 위한 씨모스 이미지 센서 및 그제조방법
US7449357B2 (en) * 2005-04-06 2008-11-11 Magnachip Semiconductor, Ltd. Method for fabricating image sensor using wafer back grinding
KR100664790B1 (ko) * 2005-06-27 2007-01-04 동부일렉트로닉스 주식회사 이미지 센서의 제조 방법
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KR20080015643A (ko) * 2006-08-16 2008-02-20 삼성전자주식회사 내부 렌즈들을 구비하는 이미지 센서 및 그 제조방법
KR100788375B1 (ko) * 2006-09-12 2008-01-02 동부일렉트로닉스 주식회사 이미지 센서 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100806781B1 (ko) * 2006-12-29 2008-02-27 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조 방법
KR101038851B1 (ko) 2008-11-05 2011-06-02 주식회사 동부하이텍 이미지 센서 및 이의 제조 방법

Also Published As

Publication number Publication date
CN100416846C (zh) 2008-09-03
KR20060077575A (ko) 2006-07-05
CN101320746A (zh) 2008-12-10
CN101320746B (zh) 2010-06-09
US20060148122A1 (en) 2006-07-06
CN1822374A (zh) 2006-08-23

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