CN100440524C - Cmos图像传感器及其制造方法 - Google Patents
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Abstract
本发明提供了一种CMOS图像传感器及其制造方法,其中,用于钝化的氮化物层被作为微透镜以减小布局。CMOS图像传感器包括:上部金属层,部分沉积于介电层上;第一氮化物层,沉积于上部金属层上;无掺杂的硅酸盐玻璃层,沉积于第一氮化物层上,并通过化学-机械抛光被抛光;滤色器阵列元件,沉积并暴露于无掺杂的硅酸盐玻璃层上,并通过化学-机械抛光被抛光;以及第二氮化物层,沉积于第一氮化物层和滤色器阵列元件上,并在第二氮化物层上形成牺牲微透镜之后被转移蚀刻。
Description
相关申请
本申请要求于2004年12月30日提交的韩国专利申请第10-2004-0116520号的优先权,其全部内容结合于此作为参考。
技术领域
本发明涉及互补金属氧化物半导体(CMOS)图像传感器,并且更具体地,涉及CMOS图像传感器及其制造方法,其中,将用于钝化的氮化物层作为微透镜以减小布局(topology)。
背景技术
图1-6分别示出了根据相关技术的用于制造CMOS图像传感器的方法的顺序处理步骤。
如图1所示,示出了焊盘(pad)的单位像素区域和外围区域,通过选择性地向硅衬底注入硼离子,形成P-阱50和N-阱。通过使用器件隔离处理填充沟槽,来形成场氧化物层60,然后根据期望的阈电压形成期望厚度的栅氧化物层(未示出)。将被用作栅电极的多晶硅层40和钨硅化物层80形成在栅氧化物层上。然后,多晶硅层40和钨硅化物层80被选择性地蚀刻,以形成器件的栅电极。接着,通过选择性的离子注入,在硅衬底中形成N-型离子注入区20和P-型离子注入区10,以形成光电二极管。阱被轻掺杂,以形成轻掺杂的漏结构的源区和漏区。正硅酸四乙酯氧化物层(atetra-ethyl-ortho-silicate oxide layer)或氮化硅(SiN)层通过低压化学气相沉积来沉积。正硅酸四乙酯氧化物层或氮化硅层被深蚀刻,以在栅电极的侧壁形成隔离件70。然后,通过重掺杂硅衬底形成源区和漏区,来形成N-型连接区30和P-型连接区。
如图2所示,通过低压化学气相沉积,形成厚度为1000的、将被用作前金属介电(PMD)层90的正硅酸四乙酯氧化物层。硼磷硅酸盐玻璃层(borophosphate-silicate-glass layer)通过高压化学气相沉积形成在正硅酸四乙酯氧化物层上。然后,对硼磷硅酸盐玻璃层进行热处理,以使其流动。然后,通过选择性地蚀刻PMD层90,形成预定连接区和使栅电极暴露的接触孔100。随后,分别沉积并选择性地蚀刻起粘合层作用的钛层110、用于互连的铝层120、以及非反射性氮化钛(TiN)层130,以形成第一金属线。通过等离子蚀刻处理形成接触孔100。
如图3所示,通过电浆辅助化学气相沉积,形成正硅酸四乙酯氧化物层150和旋涂玻璃氧化物层140。然后,对正硅酸四乙酯氧化物层150和旋涂玻璃氧化物层140进行热处理和平面化。接下来,通过电浆辅助化学气相沉积,在正硅酸四乙酯氧化物层150和旋涂玻璃氧化物层140上沉积氧化物层,以形成第一IMD层160。
如图4所示,通过选择性地蚀刻第一IMD层160来形成通孔。通过等离子蚀刻处理来沉积和蚀刻钛层、铝层、以及氮化钛层,以形成第二金属线。随后,以与第一IMD层90相同的方式形成另一正硅酸四乙酯氧化物层、另一旋涂玻璃氧化物层、以及另一氧化物层,以形成第二PMD层。上述步骤根据所需的金属线层的数量重复进行。
如图5所示,在最上部金属线层形成之后,通过电浆辅助化学气相沉积,沉积厚度为8000的氧化物层,用作器件钝化层。通过焊盘开口处理,使焊盘区域周围的金属层暴露,使得金属焊盘可以作为电极端子。换言之,用于器件钝化层的氧化物层以及氮化钛层被蚀刻,以形成焊盘开口。
如图6所示,形成滤色器阵列层170并在其上形成平面化层180。然后,在平面化层180上形成微透镜层190。即,在根据上述相关技术的CMOS图像传感器中,在形成用于钝化的氮化物层之后,形成滤色器阵列和微透镜层。然而,通过这种方式,得到的制造器件的布局太大而不能获得高质量图像。
发明内容
因此,本发明涉及一种CMOS图像传感器及其制造方法,其能够基本上消除由于相关技术的局限性和缺陷而导致的一个或多个问题。
本发明的目的在于提供一种CMOS图像传感器及其制造方法,其通过使用用于钝化的氮化物层作为微透镜来减小布局。
本发明的其它优点、目的、和特征将部分在随后的说明书中阐述,部分在本领域普通技术人员验证以下内容的基础上变得显而易见,或者可通过实施本发明而了解。本发明的目的和其它优点可通过在说明书、权利要求、以及附图中所特别指出的结构来实现和获得。
为了实现根据本发明的这些目的和其它优点,如本文中具体和概括描述的,提供了一种具有氮化物的钝化层的CMOS图像传感器,该CMOS图像传感器包括:上部金属层,部分沉积在介电层上;第一氮化物层,沉积在上部金属层上;无掺杂的硅酸盐玻璃层,沉积在第一氮化物层上,并通过化学-机械抛光被抛光;滤色器阵列元件,沉积并暴露于无掺杂的硅酸盐玻璃层上,并通过化学-机械抛光被抛光;以及第二氮化物层,沉积于第一氮化物层和滤色器阵列元件上,并在第二氮化物层上形成牺牲微透镜之后被转移蚀刻(transfer-etch)。
在本发明的另一方面中,提供了一种用于制造具有氮化物的钝化层的CMOS图像传感器的方法,该方法包括:在介电层上部分沉积上部金属层;在上部金属层上沉积第一氮化物层;限定上部金属层并在第一氮化物层上沉积无掺杂的硅酸盐玻璃层;在无掺杂的硅酸盐玻璃层的两个相邻图案之间沉积滤色器阵列元件,并使滤色器阵列元件暴露;通过化学-机械抛光去除沉积在第一氮化物层上的无掺杂的硅酸盐玻璃层以及滤色器阵列元件比第一氮化物层高的部分;在执行化学-机械抛光后,沉积第二氮化物层;在第二氮化物层上形成牺牲微透镜;以及通过使第一氮化物层的部分暴露的转移蚀刻,使第二氮化物层形成为与牺牲微透镜相同的形状。
应该了解,本发明前面的概括描述以及随后的详细描述均是示范性和说明性的,目的在于提供对所要求的发明的进一步说明。
附图说明
附图提供了对本发明的进一步理解,其被结合到本申请中并构成本申请的一部分,本发明的示范性实施例和说明书一起用来说明本发明的原理。在附图中:
图1-6是现有的CMOS图像传感器的横截面图,分别示出用于制造根据相关技术的CMOS图像传感器的方法的顺序处理步骤;以及
图7-17是根据本发明的CMOS图像传感器的横截面图,分别示出根据本发明的用于制造CMOS图像传感器的方法的顺序处理步骤。
具体实施方式
以下将详细描述本发明的优选实施例,其实例在附图中示出。任何可能的情况下,附图中将使用相同的附图标号来表示相同或相似的部件。
图7-17分别示出根据本发明的用于制造CMOS图像传感器的方法的顺序处理步骤。
如图7所示,形成光电二极管200,并在光电二极管200上形成层间介电(ILD)层。在ILD层上顺序形成第一金属层210和第二金属层230。在第一金属层210和第二金属层230之间形成第一金属间介电(IMD)层220。在第二金属层230上形成第二IMD层240。上部金属层250部分沉积在第二IMD层240上。在图7中沉积有两个上部金属层250。
如图8所示,第一氮化物层260相应地沉积在上部金属层250上。注意,第一氮化物层260相应地沉积在图7中沉积的两个上部金属层250上。
如图9所示,上部金属层250被限定,并且无掺杂的硅酸盐玻璃层280沉积在第一氮化物层260上。为沉积在上部金属层250上的第一氮化物层260执行CMOS图像传感器的第三处理过程。
如图10所示,在无掺杂的硅酸盐玻璃层280的两个相邻图案之间沉积第一滤色器阵列元件290,然后使其暴露。在无掺杂的硅酸盐玻璃层280的其他图案之间没有沉积。
如图11所示,在无掺杂的硅酸盐玻璃层280的另外两个相邻图案之间,即在没有沉积第一滤色器阵列元件290的地方,沉积第二滤色器阵列元件300,然后使其暴露。同样地,在无掺杂的硅酸盐玻璃层280的又另外两个相邻图案之间,即在没有沉积第一滤色器阵列元件290和第二滤色器阵列元件300中的任何一个的地方,沉积第三滤色器阵列元件(未示出),然后使其暴露。
如图12所示,通过化学-机械抛光,去除(平面化)沉积于第一氮化物层260上的无掺杂的硅酸盐玻璃层280和在第一氮化物层的上表面上延伸的各滤色器阵列元件的那些部分。因此,使在上部金属层250上的第一氮化物层260暴露。
如图13所示,在执行化学-机械抛光之后,沉积第二氮化物层310。
如图14所示,牺牲微透镜层320形成于第二氮化物层310上。
如图15所示,从沉积于第二氮化物层310上的牺牲微透镜层320去除在第一氮化物层260之上的牺牲微透镜层320。
如图16所示,由保留在第二氮化物层310之上的牺牲微透镜层320形成牺牲微透镜330。
如图17所示,在“转移”蚀刻处理中,为了形成微透镜340,微透镜330和第二氮化物层310被蚀刻,以形成具有与牺牲微透镜330相同形状的第二氮化物层310,并且第一氮化物层260部分被暴露,以围绕整个像素阵列。以1∶1的比例蚀刻牺牲微透镜330和第二氮化物层310。
在如上所述制造的CMOS图像传感器的结构中,上部金属层250部分沉积于介电层上。第一氮化物层260沉积于所沉积的上部金属层250上。无掺杂的硅酸盐玻璃层280沉积于第一氮化物层260上,并在沉积和暴露滤色器阵列元件后,通过化学-机械抛光被抛光。同样,滤色器阵列元件沉积并暴露于无掺杂的硅酸盐玻璃层280上,并通过化学-机械抛光被抛光。第二氮化物层310沉积于第一氮化物层260和滤色器阵列元件上,并随后在形成牺牲微透镜层320之后被蚀刻掉。最后,牺牲微透镜330形成在第二氮化物层310上,然后第二氮化物层通过蚀刻被完全去除,以将其微透镜结构转移到下层,即,第二氮化物层。
如上所述,CMOS图像传感器及其制造方法通过形成用于钝化的氮化物层的微透镜而减小了布局。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (9)
1.一种CMOS图像传感器,包括:
上部金属层,部分沉积于介电层上;
第一氮化物层,沉积于所述上部金属层上;
无掺杂的硅玻璃层,沉积于所述第一氮化物层上,并通过化学-机械抛光被抛光;
滤色器阵列元件,沉积并暴露于所述无掺杂的硅酸盐玻璃层上,并通过化学-机械抛光被抛光;以及
第二氮化物层,沉积于所述第一氮化物层和所述滤色器阵列元件上,并在所述第二氮化物层上形成牺牲微透镜之后利用所述牺牲微透镜使所述第二氮化物层被转移蚀刻。
2.根据权利要求1所述的图像传感器,其中,所述滤色器阵列元件包括:
第一滤色器阵列元件,沉积在所述无掺杂的硅酸盐玻璃层的第一对相邻图案之间并被暴露。
3.根据权利要求1所述的图像传感器,其中,所述滤色器阵列元件包括:
第二滤色器阵列元件,沉积在所述无掺杂的硅酸盐玻璃层的第二对相邻图案之间并被暴露。
4.根据权利要求1所述的图像传感器,其中,所述滤色器阵列元件包括:
第三滤色器阵列元件,沉积在所述无掺杂的硅酸盐玻璃层的第三对相邻图案之间并被暴露。
5.根据权利要求1所述的图像传感器,其中:
所述转移蚀刻所述牺牲微透镜和所述第二氮化物层之间的蚀刻比例为1∶1。
6.一种用于制造CMOS图像传感器的方法,包括:
在介电层上部分沉积上部金属层;
在所述上部金属层上沉积第一氮化物层;
限定所述上部金属层,并在所述第一氮化物层上沉积无掺杂的硅酸盐玻璃层;
在所述无掺杂的硅酸盐玻璃层的两个相邻图案之间沉积滤色器阵列元件,并使所述滤色器阵列元件暴露;
通过化学-机械抛光去除沉积于所述第一氮化物层上的所述无掺杂的硅酸盐玻璃层以及所述滤色器阵列元件比所述第一氮化物层高的部分;
在执行所述化学-机械抛光后沉积第二氮化物层;
在所述第二氮化物层上形成牺牲微透镜;以及
通过使所述第一氮化物层的部分暴露的转移蚀刻,使所述第二氮化物层形成所述牺牲微透镜的形状。
7.根据权利要求6所述的方法,所述滤色器阵列元件沉积包括:
在所述无掺杂的硅酸盐玻璃层的第一对相邻图案之间沉积第一滤色器阵列元件,并使所述第一滤色器阵列元件暴露;
在所述无掺杂的硅酸盐玻璃层的第二对相邻图案之间沉积第二滤色器阵列元件,并使所述第二滤色器阵列元件暴露;以及
在所述无掺杂的硅酸盐玻璃层的第三对相邻图案之间沉积第三滤色器阵列元件,并使所述第三滤色器阵列元件暴露。
8.根据权利要求6所述的方法,所述牺牲微透镜的形成包括:
在所述第二氮化物层上形成牺牲微透镜层;
从沉积于所述第二氮化物层上的所述牺牲微透镜层去除在所述第一氮化物层之上的所述牺牲微透镜层;以及
由保留在所述第二氮化物层之上的所述牺牲微透镜层形成牺牲微透镜。
9.根据权利要求6所述的方法,其中,所述转移蚀刻在所述牺牲微透镜和所述第二氮化物层之间的蚀刻比例为1∶1。
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US7683407B2 (en) * | 2005-08-01 | 2010-03-23 | Aptina Imaging Corporation | Structure and method for building a light tunnel for use with imaging devices |
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