CN100403547C - 电性程序化的金属氧化半导体晶体管源极/漏极串联电阻 - Google Patents

电性程序化的金属氧化半导体晶体管源极/漏极串联电阻 Download PDF

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Publication number
CN100403547C
CN100403547C CNB028257383A CN02825738A CN100403547C CN 100403547 C CN100403547 C CN 100403547C CN B028257383 A CNB028257383 A CN B028257383A CN 02825738 A CN02825738 A CN 02825738A CN 100403547 C CN100403547 C CN 100403547C
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CN
China
Prior art keywords
transistor
conductive layer
layer
semiconductor
gate
Prior art date
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Expired - Lifetime
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CNB028257383A
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English (en)
Chinese (zh)
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CN1606811A (zh
Inventor
J·F·布勒
Q·向
D·J·瑞斯特斯
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GlobalFoundries Inc
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Advanced Micro Devices Inc
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Publication of CN1606811A publication Critical patent/CN1606811A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/023—Manufacture or treatment of FETs having insulated gates [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
CNB028257383A 2001-12-20 2002-12-19 电性程序化的金属氧化半导体晶体管源极/漏极串联电阻 Expired - Lifetime CN100403547C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/022,847 US6727534B1 (en) 2001-12-20 2001-12-20 Electrically programmed MOS transistor source/drain series resistance
US10/022,847 2001-12-20

Publications (2)

Publication Number Publication Date
CN1606811A CN1606811A (zh) 2005-04-13
CN100403547C true CN100403547C (zh) 2008-07-16

Family

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Family Applications (1)

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CNB028257383A Expired - Lifetime CN100403547C (zh) 2001-12-20 2002-12-19 电性程序化的金属氧化半导体晶体管源极/漏极串联电阻

Country Status (8)

Country Link
US (1) US6727534B1 (enExample)
EP (1) EP1456888B1 (enExample)
JP (2) JP4514022B2 (enExample)
KR (1) KR100947897B1 (enExample)
CN (1) CN100403547C (enExample)
AU (1) AU2002359842A1 (enExample)
DE (1) DE60237110D1 (enExample)
WO (1) WO2003054969A1 (enExample)

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FR2840453B1 (fr) * 2002-06-04 2005-06-24 St Microelectronics Sa Procede de fabrication d'un transistor mos de longueur de grille reduite, et circuit integre comportant un tel transistor
US6891234B1 (en) * 2004-01-07 2005-05-10 Acorn Technologies, Inc. Transistor with workfunction-induced charge layer
KR100776139B1 (ko) * 2006-11-30 2007-11-15 동부일렉트로닉스 주식회사 플래시 메모리 소자
US7723785B2 (en) * 2007-07-31 2010-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. High performance power MOS structure
US7915128B2 (en) * 2008-02-29 2011-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage semiconductor devices
US8698240B2 (en) * 2010-05-25 2014-04-15 Macronix International Co., Ltd. Double diffused drain metal-oxide-simiconductor devices with floating poly thereon and methods of manufacturing the same
WO2017151148A1 (en) 2016-03-04 2017-09-08 Intel Corporation Field effect transistors with a gated oxide semiconductor source/drain spacer

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CN1157480A (zh) * 1995-08-30 1997-08-20 摩托罗拉公司 用栅电极易处置隔层形成单边缓变沟道半导体器件的方法
CN1236187A (zh) * 1998-05-20 1999-11-24 三星电子株式会社 半导体器件的制造方法
US6031266A (en) * 1996-11-11 2000-02-29 Kabushiki Kaisha Toshiba Semiconductor device with conductive sidewall film
US6043545A (en) * 1998-02-07 2000-03-28 United Microelectronics Corp. MOSFET device with two spacers
US6051470A (en) * 1999-01-15 2000-04-18 Advanced Micro Devices, Inc. Dual-gate MOSFET with channel potential engineering

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JP2667857B2 (ja) * 1988-02-12 1997-10-27 株式会社日立製作所 半導体装置およびその製造方法
JP2597719B2 (ja) * 1989-07-31 1997-04-09 株式会社東芝 不揮発性半導体記憶装置およびその動作方法
US5234852A (en) * 1990-10-10 1993-08-10 Sgs-Thomson Microelectronics, Inc. Sloped spacer for MOS field effect devices comprising reflowable glass layer
US5221632A (en) * 1990-10-31 1993-06-22 Matsushita Electric Industrial Co., Ltd. Method of proudcing a MIS transistor
KR940005293B1 (ko) * 1991-05-23 1994-06-15 삼성전자 주식회사 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조
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US5726081A (en) * 1995-10-18 1998-03-10 United Microelectronics Corp. Method of fabricating metal contact of ultra-large-scale integration metal-oxide semiconductor field effect transistor with silicon-on-insulator structure
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JP2000223700A (ja) * 1999-01-28 2000-08-11 Sharp Corp 半導体装置及びその製造方法
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US6461951B1 (en) * 1999-03-29 2002-10-08 Advanced Micro Devices, Inc. Method of forming a sidewall spacer to prevent gouging of device junctions during interlayer dielectric etching including silicide growth over gate spacers
US6306701B1 (en) * 1999-04-20 2001-10-23 United Microelectronics Corp. Self-aligned contact process
US6180490B1 (en) 1999-05-25 2001-01-30 Chartered Semiconductor Manufacturing Ltd. Method of filling shallow trenches
US6214653B1 (en) 1999-06-04 2001-04-10 International Business Machines Corporation Method for fabricating complementary metal oxide semiconductor (CMOS) devices on a mixed bulk and silicon-on-insulator (SOI) substrate
US6300172B1 (en) 1999-10-01 2001-10-09 Chartered Semiconductor Manufacturing Ltd. Method of field isolation in silicon-on-insulator technology
US6512273B1 (en) * 2000-01-28 2003-01-28 Advanced Micro Devices, Inc. Method and structure for improving hot carrier immunity for devices with very shallow junctions
US6483154B1 (en) * 2000-10-05 2002-11-19 Advanced Micro Devices, Inc. Nitrogen oxide plasma treatment for reduced nickel silicide bridging
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CN1121259A (zh) * 1995-05-04 1996-04-24 中国科学院微电子中心 一种高电子迁移率晶体管器件<hemt>的自对准制作的方法
CN1157480A (zh) * 1995-08-30 1997-08-20 摩托罗拉公司 用栅电极易处置隔层形成单边缓变沟道半导体器件的方法
US6031266A (en) * 1996-11-11 2000-02-29 Kabushiki Kaisha Toshiba Semiconductor device with conductive sidewall film
US6043545A (en) * 1998-02-07 2000-03-28 United Microelectronics Corp. MOSFET device with two spacers
CN1236187A (zh) * 1998-05-20 1999-11-24 三星电子株式会社 半导体器件的制造方法
US6051470A (en) * 1999-01-15 2000-04-18 Advanced Micro Devices, Inc. Dual-gate MOSFET with channel potential engineering

Also Published As

Publication number Publication date
US6727534B1 (en) 2004-04-27
EP1456888A1 (en) 2004-09-15
EP1456888B1 (en) 2010-07-21
DE60237110D1 (de) 2010-09-02
JP2010177690A (ja) 2010-08-12
KR100947897B1 (ko) 2010-03-17
KR20040071742A (ko) 2004-08-12
AU2002359842A1 (en) 2003-07-09
CN1606811A (zh) 2005-04-13
JP4514022B2 (ja) 2010-07-28
JP2005514772A (ja) 2005-05-19
WO2003054969A1 (en) 2003-07-03

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