CN1606811A - 电性程序化的金属氧化半导体晶体管源极/漏极串联电阻 - Google Patents
电性程序化的金属氧化半导体晶体管源极/漏极串联电阻 Download PDFInfo
- Publication number
- CN1606811A CN1606811A CNA028257383A CN02825738A CN1606811A CN 1606811 A CN1606811 A CN 1606811A CN A028257383 A CNA028257383 A CN A028257383A CN 02825738 A CN02825738 A CN 02825738A CN 1606811 A CN1606811 A CN 1606811A
- Authority
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- China
- Prior art keywords
- conductive layer
- insulating barrier
- grid
- semiconductor device
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000006850 spacer group Chemical group 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims description 73
- 230000004888 barrier function Effects 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 description 22
- 150000004706 metal oxides Chemical class 0.000 description 22
- 238000005530 etching Methods 0.000 description 19
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 10
- 239000012212 insulator Substances 0.000 description 10
- 230000000295 complement effect Effects 0.000 description 9
- 239000000428 dust Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000012163 sequencing technique Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/022,847 | 2001-12-19 | ||
US10/022,847 US6727534B1 (en) | 2001-12-20 | 2001-12-20 | Electrically programmed MOS transistor source/drain series resistance |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1606811A true CN1606811A (zh) | 2005-04-13 |
CN100403547C CN100403547C (zh) | 2008-07-16 |
Family
ID=21811729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028257383A Expired - Lifetime CN100403547C (zh) | 2001-12-20 | 2002-12-19 | 电性程序化的金属氧化半导体晶体管源极/漏极串联电阻 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6727534B1 (zh) |
EP (1) | EP1456888B1 (zh) |
JP (2) | JP4514022B2 (zh) |
KR (1) | KR100947897B1 (zh) |
CN (1) | CN100403547C (zh) |
AU (1) | AU2002359842A1 (zh) |
DE (1) | DE60237110D1 (zh) |
WO (1) | WO2003054969A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7723785B2 (en) | 2007-07-31 | 2010-05-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | High performance power MOS structure |
CN101192626B (zh) * | 2006-11-30 | 2010-06-09 | 东部高科股份有限公司 | 存储器件 |
US7915128B2 (en) | 2008-02-29 | 2011-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage semiconductor devices |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2840453B1 (fr) * | 2002-06-04 | 2005-06-24 | St Microelectronics Sa | Procede de fabrication d'un transistor mos de longueur de grille reduite, et circuit integre comportant un tel transistor |
US6891234B1 (en) * | 2004-01-07 | 2005-05-10 | Acorn Technologies, Inc. | Transistor with workfunction-induced charge layer |
US8698240B2 (en) | 2010-05-25 | 2014-04-15 | Macronix International Co., Ltd. | Double diffused drain metal-oxide-simiconductor devices with floating poly thereon and methods of manufacturing the same |
US11145739B2 (en) * | 2016-03-04 | 2021-10-12 | Intel Corporation | Field effect transistors with a gated oxide semiconductor source/drain spacer |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6325967A (ja) * | 1986-07-18 | 1988-02-03 | Hitachi Ltd | 半導体集積回路装置 |
JP2667857B2 (ja) * | 1988-02-12 | 1997-10-27 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
JP2597719B2 (ja) * | 1989-07-31 | 1997-04-09 | 株式会社東芝 | 不揮発性半導体記憶装置およびその動作方法 |
US5234852A (en) * | 1990-10-10 | 1993-08-10 | Sgs-Thomson Microelectronics, Inc. | Sloped spacer for MOS field effect devices comprising reflowable glass layer |
US5221632A (en) * | 1990-10-31 | 1993-06-22 | Matsushita Electric Industrial Co., Ltd. | Method of proudcing a MIS transistor |
KR940005293B1 (ko) * | 1991-05-23 | 1994-06-15 | 삼성전자 주식회사 | 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조 |
WO1993009567A1 (en) * | 1991-10-31 | 1993-05-13 | Vlsi Technology, Inc. | Auxiliary gate lightly doped drain (agldd) structure with dielectric sidewalls |
GB9219268D0 (en) * | 1992-09-11 | 1992-10-28 | Inmos Ltd | Semiconductor device incorporating a contact and manufacture thereof |
GB2292008A (en) * | 1994-07-28 | 1996-02-07 | Hyundai Electronics Ind | A split gate type flash eeprom cell |
US5925912A (en) * | 1995-03-27 | 1999-07-20 | Matsushita Electric Industrial Co.,Ltd. | Semiconductor apparatus having a conductive sidewall structure |
CN1034894C (zh) * | 1995-05-04 | 1997-05-14 | 中国科学院微电子中心 | 一种高电子迁移率晶体管器件的自对准制作的方法 |
CN1157480A (zh) * | 1995-08-30 | 1997-08-20 | 摩托罗拉公司 | 用栅电极易处置隔层形成单边缓变沟道半导体器件的方法 |
US5719424A (en) * | 1995-10-05 | 1998-02-17 | Micron Technology, Inc. | Graded LDD implant process for sub-half-micron MOS devices |
US5726081A (en) * | 1995-10-18 | 1998-03-10 | United Microelectronics Corp. | Method of fabricating metal contact of ultra-large-scale integration metal-oxide semiconductor field effect transistor with silicon-on-insulator structure |
JPH10144918A (ja) * | 1996-11-11 | 1998-05-29 | Toshiba Corp | 半導体装置及びその製造方法 |
US5793089A (en) * | 1997-01-10 | 1998-08-11 | Advanced Micro Devices, Inc. | Graded MOS transistor junction formed by aligning a sequence of implants to a selectively removable polysilicon sidewall space and oxide thermally grown thereon |
TW387151B (en) * | 1998-02-07 | 2000-04-11 | United Microelectronics Corp | Field effect transistor structure of integrated circuit and the manufacturing method thereof |
US6001697A (en) * | 1998-03-24 | 1999-12-14 | Mosel Vitelic Inc. | Process for manufacturing semiconductor devices having raised doped regions |
US6194272B1 (en) * | 1998-05-19 | 2001-02-27 | Mosel Vitelic, Inc. | Split gate flash cell with extremely small cell size |
KR100269510B1 (ko) * | 1998-05-20 | 2000-10-16 | 윤종용 | 반도체 장치의 제조 방법 |
US6207530B1 (en) | 1998-06-19 | 2001-03-27 | International Business Machines Corporation | Dual gate FET and process |
KR100269336B1 (ko) * | 1998-09-16 | 2000-10-16 | 윤종용 | 전도층이 포함된 게이트 스페이서를 갖는 반도체 소자 및 그 제조방법 |
US6051470A (en) * | 1999-01-15 | 2000-04-18 | Advanced Micro Devices, Inc. | Dual-gate MOSFET with channel potential engineering |
JP2000223700A (ja) * | 1999-01-28 | 2000-08-11 | Sharp Corp | 半導体装置及びその製造方法 |
TW408377B (en) * | 1999-03-26 | 2000-10-11 | United Microelectronics Corp | Method for manufacturing semiconductor devices |
US6461951B1 (en) * | 1999-03-29 | 2002-10-08 | Advanced Micro Devices, Inc. | Method of forming a sidewall spacer to prevent gouging of device junctions during interlayer dielectric etching including silicide growth over gate spacers |
US6306701B1 (en) * | 1999-04-20 | 2001-10-23 | United Microelectronics Corp. | Self-aligned contact process |
US6180490B1 (en) | 1999-05-25 | 2001-01-30 | Chartered Semiconductor Manufacturing Ltd. | Method of filling shallow trenches |
US6214653B1 (en) | 1999-06-04 | 2001-04-10 | International Business Machines Corporation | Method for fabricating complementary metal oxide semiconductor (CMOS) devices on a mixed bulk and silicon-on-insulator (SOI) substrate |
US6300172B1 (en) | 1999-10-01 | 2001-10-09 | Chartered Semiconductor Manufacturing Ltd. | Method of field isolation in silicon-on-insulator technology |
US6512273B1 (en) * | 2000-01-28 | 2003-01-28 | Advanced Micro Devices, Inc. | Method and structure for improving hot carrier immunity for devices with very shallow junctions |
US6483154B1 (en) * | 2000-10-05 | 2002-11-19 | Advanced Micro Devices, Inc. | Nitrogen oxide plasma treatment for reduced nickel silicide bridging |
US6507123B1 (en) * | 2000-10-05 | 2003-01-14 | Advanced Micro Devices, Inc. | Nickel silicide process using UDOX to prevent silicide shorting |
JP2002329861A (ja) * | 2001-05-01 | 2002-11-15 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2003179224A (ja) * | 2001-12-10 | 2003-06-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
-
2001
- 2001-12-20 US US10/022,847 patent/US6727534B1/en not_active Expired - Lifetime
-
2002
- 2002-12-19 WO PCT/US2002/041330 patent/WO2003054969A1/en active Application Filing
- 2002-12-19 AU AU2002359842A patent/AU2002359842A1/en not_active Abandoned
- 2002-12-19 CN CNB028257383A patent/CN100403547C/zh not_active Expired - Lifetime
- 2002-12-19 JP JP2003555591A patent/JP4514022B2/ja not_active Expired - Fee Related
- 2002-12-19 KR KR1020047009730A patent/KR100947897B1/ko not_active IP Right Cessation
- 2002-12-19 EP EP02794406A patent/EP1456888B1/en not_active Expired - Lifetime
- 2002-12-19 DE DE60237110T patent/DE60237110D1/de not_active Expired - Lifetime
-
2010
- 2010-03-30 JP JP2010077347A patent/JP2010177690A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101192626B (zh) * | 2006-11-30 | 2010-06-09 | 东部高科股份有限公司 | 存储器件 |
US7723785B2 (en) | 2007-07-31 | 2010-05-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | High performance power MOS structure |
US7888216B2 (en) | 2007-07-31 | 2011-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a high performance power MOS |
US7915128B2 (en) | 2008-02-29 | 2011-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
EP1456888A1 (en) | 2004-09-15 |
JP4514022B2 (ja) | 2010-07-28 |
WO2003054969A1 (en) | 2003-07-03 |
US6727534B1 (en) | 2004-04-27 |
JP2010177690A (ja) | 2010-08-12 |
EP1456888B1 (en) | 2010-07-21 |
JP2005514772A (ja) | 2005-05-19 |
KR100947897B1 (ko) | 2010-03-17 |
DE60237110D1 (de) | 2010-09-02 |
KR20040071742A (ko) | 2004-08-12 |
CN100403547C (zh) | 2008-07-16 |
AU2002359842A1 (en) | 2003-07-09 |
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