CN103811552A - 半导体装置及其形成方法 - Google Patents
半导体装置及其形成方法 Download PDFInfo
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- CN103811552A CN103811552A CN201310535821.0A CN201310535821A CN103811552A CN 103811552 A CN103811552 A CN 103811552A CN 201310535821 A CN201310535821 A CN 201310535821A CN 103811552 A CN103811552 A CN 103811552A
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- 238000000034 method Methods 0.000 title claims abstract description 66
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0886—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66553—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using inside spacers, permanent or not
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- Computer Hardware Design (AREA)
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Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710224071.3A CN107424995B (zh) | 2012-11-01 | 2013-11-01 | 半导体装置及其形成方法 |
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US9040380B2 (en) * | 2013-09-11 | 2015-05-26 | GlobalFoundries, Inc. | Integrated circuits having laterally confined epitaxial material overlying fin structures and methods for fabricating same |
KR102287398B1 (ko) | 2015-01-14 | 2021-08-06 | 삼성전자주식회사 | 반도체 장치 |
US9960273B2 (en) * | 2015-11-16 | 2018-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit structure with substrate isolation and un-doped channel |
US9425108B1 (en) * | 2015-12-05 | 2016-08-23 | International Business Machines Corporation | Method to prevent lateral epitaxial growth in semiconductor devices |
US10002962B2 (en) | 2016-04-27 | 2018-06-19 | International Business Machines Corporation | Vertical FET structure |
US9799765B1 (en) | 2016-06-29 | 2017-10-24 | International Business Machines Corporation | Formation of a bottom source-drain for vertical field-effect transistors |
US10326020B2 (en) | 2016-08-09 | 2019-06-18 | International Business Machines Corporation | Structure and method for forming strained FinFET by cladding stressors |
US10096692B1 (en) | 2017-04-05 | 2018-10-09 | International Business Machines Corporation | Vertical field effect transistor with reduced parasitic capacitance |
CN115939216B (zh) * | 2023-02-15 | 2023-05-23 | 广东仁懋电子有限公司 | 一种场效应晶体管及制备方法 |
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CN1967812A (zh) * | 2005-11-15 | 2007-05-23 | 国际商业机器公司 | 具有准自对准源极/漏极FinFET的半导体器件及其形成方法 |
US20100065917A1 (en) * | 2008-09-18 | 2010-03-18 | Atsushi Ohta | Semiconductor device and method of manufacturing the same |
US20110193164A1 (en) * | 2009-09-30 | 2011-08-11 | Huilong Zhu | Semiconductor device and method for manufacturing the same |
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JP4504214B2 (ja) * | 2005-02-04 | 2010-07-14 | 株式会社東芝 | Mos型半導体装置及びその製造方法 |
US7834403B2 (en) * | 2007-08-13 | 2010-11-16 | Infineon Technologies Ag | Bipolar transistor FINFET technology |
DE102008059500B4 (de) * | 2008-11-28 | 2010-08-26 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung eines Mehr-Gatetransistors mit homogen silizidierten Stegendbereichen |
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US20100065917A1 (en) * | 2008-09-18 | 2010-03-18 | Atsushi Ohta | Semiconductor device and method of manufacturing the same |
US20110193164A1 (en) * | 2009-09-30 | 2011-08-11 | Huilong Zhu | Semiconductor device and method for manufacturing the same |
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US20140264387A1 (en) | 2014-09-18 |
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