CN100401483C - 单晶硅基片的表面处理方法和硅外延片的制造方法 - Google Patents

单晶硅基片的表面处理方法和硅外延片的制造方法 Download PDF

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Publication number
CN100401483C
CN100401483C CNB2004100457066A CN200410045706A CN100401483C CN 100401483 C CN100401483 C CN 100401483C CN B2004100457066 A CNB2004100457066 A CN B2004100457066A CN 200410045706 A CN200410045706 A CN 200410045706A CN 100401483 C CN100401483 C CN 100401483C
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CN
China
Prior art keywords
silicon substrate
single crystal
oxide film
crystal silicon
mentioned
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2004100457066A
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English (en)
Chinese (zh)
Other versions
CN1574247A (zh
Inventor
保科祐章
田中纪通
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of CN1574247A publication Critical patent/CN1574247A/zh
Application granted granted Critical
Publication of CN100401483C publication Critical patent/CN100401483C/zh
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Expired - Fee Related legal-status Critical Current

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    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04D—ROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
    • E04D11/00—Roof covering, as far as not restricted to features covered by only one of groups E04D1/00 - E04D9/00; Roof covering in ways not provided for by groups E04D1/00 - E04D9/00, e.g. built-up roofs, elevated load-supporting roof coverings
    • E04D11/02—Build-up roofs, i.e. consisting of two or more layers bonded together in situ, at least one of the layers being of watertight composition
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04D—ROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
    • E04D13/00—Special arrangements or devices in connection with roof coverings; Protection against birds; Roof drainage ; Sky-lights
    • E04D13/17—Ventilation of roof coverings not otherwise provided for

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Weting (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CNB2004100457066A 2003-05-21 2004-05-21 单晶硅基片的表面处理方法和硅外延片的制造方法 Expired - Fee Related CN100401483C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP143633/2003 2003-05-21
JP143633/03 2003-05-21
JP2003143633A JP4066881B2 (ja) 2003-05-21 2003-05-21 表面処理方法、シリコンエピタキシャルウェーハの製造方法及びシリコンエピタキシャルウェーハ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2008100955430A Division CN101271870B (zh) 2003-05-21 2004-05-21 硅外延片

Publications (2)

Publication Number Publication Date
CN1574247A CN1574247A (zh) 2005-02-02
CN100401483C true CN100401483C (zh) 2008-07-09

Family

ID=33531359

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2004100457066A Expired - Fee Related CN100401483C (zh) 2003-05-21 2004-05-21 单晶硅基片的表面处理方法和硅外延片的制造方法
CN2008100955430A Expired - Fee Related CN101271870B (zh) 2003-05-21 2004-05-21 硅外延片

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2008100955430A Expired - Fee Related CN101271870B (zh) 2003-05-21 2004-05-21 硅外延片

Country Status (4)

Country Link
JP (1) JP4066881B2 (enExample)
KR (1) KR101050679B1 (enExample)
CN (2) CN100401483C (enExample)
TW (1) TW200509224A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100365889C (zh) * 2006-05-18 2008-01-30 中微光电子(潍坊)有限公司 一种防止垂直腔面发射半导体激光器在湿法氧化时开裂的方法
CN101311340B (zh) * 2008-03-19 2010-06-02 南京国盛电子有限公司 硅反外延片的制造方法及其专用设备
WO2010035409A1 (ja) * 2008-09-26 2010-04-01 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
JP5141541B2 (ja) * 2008-12-24 2013-02-13 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
KR101022567B1 (ko) * 2009-02-02 2011-03-16 주식회사 엘지실트론 에피택셜 웨이퍼 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04245431A (ja) * 1991-01-30 1992-09-02 Kyushu Electron Metal Co Ltd 半導体基板の酸化膜除去方法とその装置
CN1157477A (zh) * 1995-10-30 1997-08-20 日本电气株式会社 用于半导体器件的外延膜生长方法
JP2003264168A (ja) * 2002-03-11 2003-09-19 Dainippon Screen Mfg Co Ltd 基板周縁処理装置および基板周縁処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3635200B2 (ja) * 1998-06-04 2005-04-06 信越半導体株式会社 Ｓｏｉウェーハの製造方法
US6444027B1 (en) * 2000-05-08 2002-09-03 Memc Electronic Materials, Inc. Modified susceptor for use in chemical vapor deposition process

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04245431A (ja) * 1991-01-30 1992-09-02 Kyushu Electron Metal Co Ltd 半導体基板の酸化膜除去方法とその装置
CN1157477A (zh) * 1995-10-30 1997-08-20 日本电气株式会社 用于半导体器件的外延膜生长方法
JP2003264168A (ja) * 2002-03-11 2003-09-19 Dainippon Screen Mfg Co Ltd 基板周縁処理装置および基板周縁処理方法

Also Published As

Publication number Publication date
CN101271870B (zh) 2010-12-08
KR20040100937A (ko) 2004-12-02
TW200509224A (en) 2005-03-01
CN1574247A (zh) 2005-02-02
TWI334167B (enExample) 2010-12-01
CN101271870A (zh) 2008-09-24
JP2004349405A (ja) 2004-12-09
KR101050679B1 (ko) 2011-07-22
JP4066881B2 (ja) 2008-03-26

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080709