KR101050679B1 - 표면 처리 방법, 실리콘 에피텍셜 웨이퍼의 제조 방법 및 실리콘 에피텍셜 웨이퍼 - Google Patents

표면 처리 방법, 실리콘 에피텍셜 웨이퍼의 제조 방법 및 실리콘 에피텍셜 웨이퍼 Download PDF

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Publication number
KR101050679B1
KR101050679B1 KR1020040034749A KR20040034749A KR101050679B1 KR 101050679 B1 KR101050679 B1 KR 101050679B1 KR 1020040034749 A KR1020040034749 A KR 1020040034749A KR 20040034749 A KR20040034749 A KR 20040034749A KR 101050679 B1 KR101050679 B1 KR 101050679B1
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KR
South Korea
Prior art keywords
single crystal
crystal substrate
silicon
silicon single
oxide film
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Expired - Fee Related
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KR1020040034749A
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English (en)
Korean (ko)
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KR20040100937A (ko
Inventor
호시나유소
다나카노리미치
Original Assignee
신에쯔 한도타이 가부시키가이샤
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Publication of KR20040100937A publication Critical patent/KR20040100937A/ko
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Publication of KR101050679B1 publication Critical patent/KR101050679B1/ko
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    • EFIXED CONSTRUCTIONS
    • E04BUILDING
    • E04DROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
    • E04D11/00Roof covering, as far as not restricted to features covered by only one of groups E04D1/00 - E04D9/00; Roof covering in ways not provided for by groups E04D1/00 - E04D9/00, e.g. built-up roofs, elevated load-supporting roof coverings
    • E04D11/02Build-up roofs, i.e. consisting of two or more layers bonded together in situ, at least one of the layers being of watertight composition
    • EFIXED CONSTRUCTIONS
    • E04BUILDING
    • E04DROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
    • E04D13/00Special arrangements or devices in connection with roof coverings; Protection against birds; Roof drainage ; Sky-lights
    • E04D13/17Ventilation of roof coverings not otherwise provided for

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020040034749A 2003-05-21 2004-05-17 표면 처리 방법, 실리콘 에피텍셜 웨이퍼의 제조 방법 및 실리콘 에피텍셜 웨이퍼 Expired - Fee Related KR101050679B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00143633 2003-05-21
JP2003143633A JP4066881B2 (ja) 2003-05-21 2003-05-21 表面処理方法、シリコンエピタキシャルウェーハの製造方法及びシリコンエピタキシャルウェーハ

Publications (2)

Publication Number Publication Date
KR20040100937A KR20040100937A (ko) 2004-12-02
KR101050679B1 true KR101050679B1 (ko) 2011-07-22

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ID=33531359

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040034749A Expired - Fee Related KR101050679B1 (ko) 2003-05-21 2004-05-17 표면 처리 방법, 실리콘 에피텍셜 웨이퍼의 제조 방법 및 실리콘 에피텍셜 웨이퍼

Country Status (4)

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JP (1) JP4066881B2 (enExample)
KR (1) KR101050679B1 (enExample)
CN (2) CN101271870B (enExample)
TW (1) TW200509224A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100365889C (zh) * 2006-05-18 2008-01-30 中微光电子(潍坊)有限公司 一种防止垂直腔面发射半导体激光器在湿法氧化时开裂的方法
CN101311340B (zh) * 2008-03-19 2010-06-02 南京国盛电子有限公司 硅反外延片的制造方法及其专用设备
WO2010035409A1 (ja) * 2008-09-26 2010-04-01 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
JP5141541B2 (ja) * 2008-12-24 2013-02-13 株式会社Sumco エピタキシャルウェーハの製造方法
KR101022567B1 (ko) * 2009-02-02 2011-03-16 주식회사 엘지실트론 에피택셜 웨이퍼 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04245431A (ja) * 1991-01-30 1992-09-02 Kyushu Electron Metal Co Ltd 半導体基板の酸化膜除去方法とその装置
JP2970499B2 (ja) * 1995-10-30 1999-11-02 日本電気株式会社 半導体装置の製造方法
JP3635200B2 (ja) * 1998-06-04 2005-04-06 信越半導体株式会社 Soiウェーハの製造方法
US6444027B1 (en) * 2000-05-08 2002-09-03 Memc Electronic Materials, Inc. Modified susceptor for use in chemical vapor deposition process
JP3727602B2 (ja) * 2002-03-11 2005-12-14 大日本スクリーン製造株式会社 基板周縁処理装置および基板周縁処理方法

Also Published As

Publication number Publication date
JP2004349405A (ja) 2004-12-09
CN101271870B (zh) 2010-12-08
JP4066881B2 (ja) 2008-03-26
CN1574247A (zh) 2005-02-02
CN100401483C (zh) 2008-07-09
KR20040100937A (ko) 2004-12-02
TW200509224A (en) 2005-03-01
CN101271870A (zh) 2008-09-24
TWI334167B (enExample) 2010-12-01

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