CN100388498C - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN100388498C CN100388498C CNB200510087443XA CN200510087443A CN100388498C CN 100388498 C CN100388498 C CN 100388498C CN B200510087443X A CNB200510087443X A CN B200510087443XA CN 200510087443 A CN200510087443 A CN 200510087443A CN 100388498 C CN100388498 C CN 100388498C
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- metal level
- layer
- capacitor
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004216515 | 2004-07-23 | ||
JP2004216515A JP4571836B2 (ja) | 2004-07-23 | 2004-07-23 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1725497A CN1725497A (zh) | 2006-01-25 |
CN100388498C true CN100388498C (zh) | 2008-05-14 |
Family
ID=35656225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200510087443XA Expired - Fee Related CN100388498C (zh) | 2004-07-23 | 2005-07-22 | 半导体器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20060017090A1 (zh) |
JP (1) | JP4571836B2 (zh) |
CN (1) | CN100388498C (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2031640A4 (en) * | 2006-06-16 | 2009-06-10 | Nikon Corp | DEVICE WITH A VARIABLE SLOT, LIGHTING DEVICE, EXPOSURE DEVICE, EXPOSURE METHOD AND METHOD FOR PRODUCING THE DEVICE |
KR100990143B1 (ko) * | 2008-07-03 | 2010-10-29 | 주식회사 하이닉스반도체 | 자기터널접합 장치, 이를 구비하는 메모리 셀 및 그제조방법 |
JP2012104551A (ja) | 2010-11-08 | 2012-05-31 | Elpida Memory Inc | 半導体記憶装置及びその製造方法 |
US8524599B2 (en) * | 2011-03-17 | 2013-09-03 | Micron Technology, Inc. | Methods of forming at least one conductive element and methods of forming a semiconductor structure |
JP6583014B2 (ja) | 2016-01-22 | 2019-10-02 | 株式会社デンソー | 半導体装置の製造方法 |
US10265602B2 (en) | 2016-03-03 | 2019-04-23 | Blast Motion Inc. | Aiming feedback system with inertial sensors |
US10553673B2 (en) * | 2017-12-27 | 2020-02-04 | Micron Technology, Inc. | Methods used in forming at least a portion of at least one conductive capacitor electrode of a capacitor that comprises a pair of conductive capacitor electrodes having a capacitor insulator there-between and methods of forming a capacitor |
KR20230148398A (ko) * | 2018-01-17 | 2023-10-24 | 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. | 커패시터, 커패시터 제조 방법 및 반도체 장치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11354738A (ja) * | 1998-06-05 | 1999-12-24 | Nec Corp | 半導体記憶装置及びその製造方法 |
US6057231A (en) * | 1997-10-02 | 2000-05-02 | Micron Technology, Inc. | Method for improved metal fill by treatment of mobility layers |
CN1273435A (zh) * | 1999-05-07 | 2000-11-15 | 日本电气株式会社 | 制造圆柱形电容器下电极的方法 |
US20030143322A1 (en) * | 2002-01-25 | 2003-07-31 | Infineon Technologies North America Corp. | Vertical MIMCap manufacturing method |
US20040084709A1 (en) * | 2002-07-30 | 2004-05-06 | Samsung Electronics Co, Ltd. | Capacitor for a semiconductor device and method of fabricating same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11176767A (ja) * | 1997-12-11 | 1999-07-02 | Toshiba Corp | 半導体装置の製造方法 |
US6750495B1 (en) * | 1999-05-12 | 2004-06-15 | Agere Systems Inc. | Damascene capacitors for integrated circuits |
JP5646798B2 (ja) * | 1999-11-11 | 2014-12-24 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体集積回路装置の製造方法 |
JP4041396B2 (ja) * | 2000-08-11 | 2008-01-30 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP2002285333A (ja) * | 2001-03-26 | 2002-10-03 | Hitachi Ltd | 半導体装置の製造方法 |
JP3863391B2 (ja) * | 2001-06-13 | 2006-12-27 | Necエレクトロニクス株式会社 | 半導体装置 |
JP2003224206A (ja) * | 2002-01-29 | 2003-08-08 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
2004
- 2004-07-23 JP JP2004216515A patent/JP4571836B2/ja not_active Expired - Fee Related
-
2005
- 2005-07-14 US US11/180,675 patent/US20060017090A1/en not_active Abandoned
- 2005-07-22 CN CNB200510087443XA patent/CN100388498C/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6057231A (en) * | 1997-10-02 | 2000-05-02 | Micron Technology, Inc. | Method for improved metal fill by treatment of mobility layers |
US6482735B1 (en) * | 1997-10-02 | 2002-11-19 | Micron Technology, Inc. | Method for improved metal fill by treatment of mobility layers |
JPH11354738A (ja) * | 1998-06-05 | 1999-12-24 | Nec Corp | 半導体記憶装置及びその製造方法 |
CN1273435A (zh) * | 1999-05-07 | 2000-11-15 | 日本电气株式会社 | 制造圆柱形电容器下电极的方法 |
US20030143322A1 (en) * | 2002-01-25 | 2003-07-31 | Infineon Technologies North America Corp. | Vertical MIMCap manufacturing method |
US20040084709A1 (en) * | 2002-07-30 | 2004-05-06 | Samsung Electronics Co, Ltd. | Capacitor for a semiconductor device and method of fabricating same |
Also Published As
Publication number | Publication date |
---|---|
US20060017090A1 (en) | 2006-01-26 |
JP4571836B2 (ja) | 2010-10-27 |
CN1725497A (zh) | 2006-01-25 |
JP2006041060A (ja) | 2006-02-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER NAME: NEC CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corp. Address before: Kanagawa, Japan Patentee before: NEC ELECTRONICS Corp. |
|
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corp. Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080514 Termination date: 20210722 |