CN100388418C - 基板处理装置用部件及其制造方法 - Google Patents

基板处理装置用部件及其制造方法 Download PDF

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Publication number
CN100388418C
CN100388418C CNB2005101177866A CN200510117786A CN100388418C CN 100388418 C CN100388418 C CN 100388418C CN B2005101177866 A CNB2005101177866 A CN B2005101177866A CN 200510117786 A CN200510117786 A CN 200510117786A CN 100388418 C CN100388418 C CN 100388418C
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CN
China
Prior art keywords
focus ring
substrate processing
processing apparatus
silicon carbide
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005101177866A
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English (en)
Chinese (zh)
Other versions
CN1790615A (zh
Inventor
守屋刚
三桥康至
上殿明良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN1790615A publication Critical patent/CN1790615A/zh
Application granted granted Critical
Publication of CN100388418C publication Critical patent/CN100388418C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0054—Plasma-treatment, e.g. with gas-discharge plasma
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CNB2005101177866A 2004-11-10 2005-11-10 基板处理装置用部件及其制造方法 Expired - Fee Related CN100388418C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004327077 2004-11-10
JP2004327077A JP2006140238A (ja) 2004-11-10 2004-11-10 基板処理装置用部品及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2007101650261A Division CN101244945B (zh) 2004-11-10 2005-11-10 基板处理装置用部件及其制造方法

Publications (2)

Publication Number Publication Date
CN1790615A CN1790615A (zh) 2006-06-21
CN100388418C true CN100388418C (zh) 2008-05-14

Family

ID=36620872

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2005101177866A Expired - Fee Related CN100388418C (zh) 2004-11-10 2005-11-10 基板处理装置用部件及其制造方法
CN2007101650261A Expired - Fee Related CN101244945B (zh) 2004-11-10 2005-11-10 基板处理装置用部件及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2007101650261A Expired - Fee Related CN101244945B (zh) 2004-11-10 2005-11-10 基板处理装置用部件及其制造方法

Country Status (4)

Country Link
JP (1) JP2006140238A (enExample)
KR (1) KR100735936B1 (enExample)
CN (2) CN100388418C (enExample)
TW (1) TW200634924A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100577866C (zh) * 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
CN101357854B (zh) * 2008-09-12 2012-07-25 西安交通大学 一种降低陶瓷热障涂层热导率的后处理方法
CN101748385B (zh) * 2008-12-22 2012-05-09 深超光电（深圳）有限公司 用于化学气相沉积(cvd)的基板处理设备
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
JP2012049220A (ja) * 2010-08-25 2012-03-08 Mitsui Eng & Shipbuild Co Ltd 耐プラズマ部材およびその再生方法
KR101671671B1 (ko) 2016-05-25 2016-11-01 주식회사 티씨케이 반도체 제조용 부품의 재생방법과 그 재생장치 및 재생부품
JP6812264B2 (ja) * 2017-02-16 2021-01-13 東京エレクトロン株式会社 真空処理装置、及びメンテナンス装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211700A (ja) * 1994-01-24 1995-08-11 Sumitomo Metal Ind Ltd プラズマ発生装置用電極及びその製造方法
CN1440563A (zh) * 2000-06-30 2003-09-03 兰姆研究公司 具有改善的颗粒污染性能的半导体处理设备
WO2003079404A2 (en) * 2002-03-12 2003-09-25 Tokyo Electron Limited An improved substrate holder for plasma processing
US20030198749A1 (en) * 2002-04-17 2003-10-23 Applied Materials, Inc. Coated silicon carbide cermet used in a plasma reactor
WO2004043876A1 (ja) * 2002-11-12 2004-05-27 Bridgestone Corporation 炭化ケイ素焼結体及びその製造方法
US6815352B1 (en) * 1999-11-09 2004-11-09 Shin-Etsu Chemical Co., Ltd. Silicon focus ring and method for producing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0170907B1 (ko) * 1995-10-25 1999-03-30 김주용 반도체 소자의 무결함층 제조방법
KR100203129B1 (ko) 1995-12-15 1999-06-15 김영환 소오스/드레인 접합 잔류 결함 제거방법
JP4432317B2 (ja) * 2002-12-11 2010-03-17 信越半導体株式会社 シリコンウエーハの熱処理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211700A (ja) * 1994-01-24 1995-08-11 Sumitomo Metal Ind Ltd プラズマ発生装置用電極及びその製造方法
US6815352B1 (en) * 1999-11-09 2004-11-09 Shin-Etsu Chemical Co., Ltd. Silicon focus ring and method for producing the same
CN1440563A (zh) * 2000-06-30 2003-09-03 兰姆研究公司 具有改善的颗粒污染性能的半导体处理设备
WO2003079404A2 (en) * 2002-03-12 2003-09-25 Tokyo Electron Limited An improved substrate holder for plasma processing
US20030198749A1 (en) * 2002-04-17 2003-10-23 Applied Materials, Inc. Coated silicon carbide cermet used in a plasma reactor
WO2004043876A1 (ja) * 2002-11-12 2004-05-27 Bridgestone Corporation 炭化ケイ素焼結体及びその製造方法

Also Published As

Publication number Publication date
TWI380360B (enExample) 2012-12-21
TW200634924A (en) 2006-10-01
KR20060052455A (ko) 2006-05-19
CN101244945A (zh) 2008-08-20
JP2006140238A (ja) 2006-06-01
CN101244945B (zh) 2013-05-29
CN1790615A (zh) 2006-06-21
KR100735936B1 (ko) 2007-07-06

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C06 Publication
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SE01 Entry into force of request for substantive examination
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CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080514

Termination date: 20201110