JP2006140238A - 基板処理装置用部品及びその製造方法 - Google Patents

基板処理装置用部品及びその製造方法 Download PDF

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Publication number
JP2006140238A
JP2006140238A JP2004327077A JP2004327077A JP2006140238A JP 2006140238 A JP2006140238 A JP 2006140238A JP 2004327077 A JP2004327077 A JP 2004327077A JP 2004327077 A JP2004327077 A JP 2004327077A JP 2006140238 A JP2006140238 A JP 2006140238A
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JP
Japan
Prior art keywords
processing apparatus
substrate processing
component
focus ring
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004327077A
Other languages
English (en)
Japanese (ja)
Inventor
Takeshi Moriya
剛 守屋
Yasushi Mihashi
康至 三橋
Akira Joden
明良 上殿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2004327077A priority Critical patent/JP2006140238A/ja
Priority to KR1020050105199A priority patent/KR100735936B1/ko
Priority to TW094139134A priority patent/TW200634924A/zh
Priority to CNB2005101177866A priority patent/CN100388418C/zh
Priority to CN2007101650261A priority patent/CN101244945B/zh
Priority to US11/270,671 priority patent/US8058186B2/en
Publication of JP2006140238A publication Critical patent/JP2006140238A/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0054—Plasma-treatment, e.g. with gas-discharge plasma
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2004327077A 2004-11-10 2004-11-10 基板処理装置用部品及びその製造方法 Pending JP2006140238A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004327077A JP2006140238A (ja) 2004-11-10 2004-11-10 基板処理装置用部品及びその製造方法
KR1020050105199A KR100735936B1 (ko) 2004-11-10 2005-11-04 기판처리장치용 부품 및 그 제조방법
TW094139134A TW200634924A (en) 2004-11-10 2005-11-08 Components for substrate processing apparatus and manufacturing method thereof
CNB2005101177866A CN100388418C (zh) 2004-11-10 2005-11-10 基板处理装置用部件及其制造方法
CN2007101650261A CN101244945B (zh) 2004-11-10 2005-11-10 基板处理装置用部件及其制造方法
US11/270,671 US8058186B2 (en) 2004-11-10 2005-11-10 Components for substrate processing apparatus and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004327077A JP2006140238A (ja) 2004-11-10 2004-11-10 基板処理装置用部品及びその製造方法

Publications (1)

Publication Number Publication Date
JP2006140238A true JP2006140238A (ja) 2006-06-01

Family

ID=36620872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004327077A Pending JP2006140238A (ja) 2004-11-10 2004-11-10 基板処理装置用部品及びその製造方法

Country Status (4)

Country Link
JP (1) JP2006140238A (enExample)
KR (1) KR100735936B1 (enExample)
CN (2) CN100388418C (enExample)
TW (1) TW200634924A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008211183A (ja) * 2007-02-27 2008-09-11 Advanced Micro-Fabrication Equipment Inc Asia 容量的結合型プラズマチェンバー、シャワーヘッドの構造、製造方法並びに新たに再生リサイクルする方法
JP2012049220A (ja) * 2010-08-25 2012-03-08 Mitsui Eng & Shipbuild Co Ltd 耐プラズマ部材およびその再生方法
JP2017212427A (ja) * 2016-05-25 2017-11-30 韓國東海炭素株式會社 半導体製造用部品の再生方法、その再生装置及び再生部品

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101357854B (zh) * 2008-09-12 2012-07-25 西安交通大学 一种降低陶瓷热障涂层热导率的后处理方法
CN101748385B (zh) * 2008-12-22 2012-05-09 深超光电（深圳）有限公司 用于化学气相沉积(cvd)的基板处理设备
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
JP6812264B2 (ja) * 2017-02-16 2021-01-13 東京エレクトロン株式会社 真空処理装置、及びメンテナンス装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211700A (ja) * 1994-01-24 1995-08-11 Sumitomo Metal Ind Ltd プラズマ発生装置用電極及びその製造方法
KR0170907B1 (ko) * 1995-10-25 1999-03-30 김주용 반도체 소자의 무결함층 제조방법
KR100203129B1 (ko) 1995-12-15 1999-06-15 김영환 소오스/드레인 접합 잔류 결함 제거방법
JP3551867B2 (ja) * 1999-11-09 2004-08-11 信越化学工業株式会社 シリコンフォーカスリング及びその製造方法
US6890861B1 (en) * 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US20050120960A1 (en) * 2002-03-12 2005-06-09 Tokyo Electron Limited Substrate holder for plasma processing
US20030198749A1 (en) * 2002-04-17 2003-10-23 Applied Materials, Inc. Coated silicon carbide cermet used in a plasma reactor
TW200416208A (en) * 2002-11-12 2004-09-01 Bridgestone Corp Silicon carbide sintered product and method for production the same
JP4432317B2 (ja) * 2002-12-11 2010-03-17 信越半導体株式会社 シリコンウエーハの熱処理方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008211183A (ja) * 2007-02-27 2008-09-11 Advanced Micro-Fabrication Equipment Inc Asia 容量的結合型プラズマチェンバー、シャワーヘッドの構造、製造方法並びに新たに再生リサイクルする方法
JP2012049220A (ja) * 2010-08-25 2012-03-08 Mitsui Eng & Shipbuild Co Ltd 耐プラズマ部材およびその再生方法
JP2017212427A (ja) * 2016-05-25 2017-11-30 韓國東海炭素株式會社 半導体製造用部品の再生方法、その再生装置及び再生部品
US10586687B2 (en) 2016-05-25 2020-03-10 Tokai Carbon Korea Co., Ltd. Method and apparatus for reproducing component of semiconductor manufacturing apparatus, and reproduced component

Also Published As

Publication number Publication date
TWI380360B (enExample) 2012-12-21
TW200634924A (en) 2006-10-01
KR20060052455A (ko) 2006-05-19
CN100388418C (zh) 2008-05-14
CN101244945A (zh) 2008-08-20
CN101244945B (zh) 2013-05-29
CN1790615A (zh) 2006-06-21
KR100735936B1 (ko) 2007-07-06

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