TW200634924A - Components for substrate processing apparatus and manufacturing method thereof - Google Patents

Components for substrate processing apparatus and manufacturing method thereof

Info

Publication number
TW200634924A
TW200634924A TW094139134A TW94139134A TW200634924A TW 200634924 A TW200634924 A TW 200634924A TW 094139134 A TW094139134 A TW 094139134A TW 94139134 A TW94139134 A TW 94139134A TW 200634924 A TW200634924 A TW 200634924A
Authority
TW
Taiwan
Prior art keywords
focus ring
vicinity
impurities
manufacturing
components
Prior art date
Application number
TW094139134A
Other languages
Chinese (zh)
Other versions
TWI380360B (en
Inventor
Tsuyoshi Moriya
Kouji Mitsuhashi
Akira Uedono
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200634924A publication Critical patent/TW200634924A/en
Application granted granted Critical
Publication of TWI380360B publication Critical patent/TWI380360B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0054—Plasma-treatment, e.g. with gas-discharge plasma
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics

Abstract

A focus ring is shaped by cutting off a silicon carbide body formed by a sintering method or a CVD method. The shaped focus ring is exposed to a plasma generated from at least one of a carbon tetra fluoride gas and an oxygen gas for producing impurities, and the impurities are introduced to void-like defects existing in the vicinity of a surface of the focus ring. Subsequently, positrons are injected in the vicinity of the surface of the focus ring into which the impurities are introduced, and the defect density in the vicinity of the surface of the focus ring is detected by the positron annihilation method.
TW094139134A 2004-11-10 2005-11-08 Components for substrate processing apparatus and manufacturing method thereof TW200634924A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004327077A JP2006140238A (en) 2004-11-10 2004-11-10 Component for substrate treatment device and its manufacturing method

Publications (2)

Publication Number Publication Date
TW200634924A true TW200634924A (en) 2006-10-01
TWI380360B TWI380360B (en) 2012-12-21

Family

ID=36620872

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094139134A TW200634924A (en) 2004-11-10 2005-11-08 Components for substrate processing apparatus and manufacturing method thereof

Country Status (4)

Country Link
JP (1) JP2006140238A (en)
KR (1) KR100735936B1 (en)
CN (2) CN101244945B (en)
TW (1) TW200634924A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI622326B (en) * 2009-07-10 2018-04-21 Tokyo Electron Ltd Surface treatment method

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100577866C (en) * 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 Gas sprayer assembly applied in plasma reaction chamber, manufacture method and renewing reutilization method thereof
CN101357854B (en) * 2008-09-12 2012-07-25 西安交通大学 Postprocessing method for reducing thermal conductivity of ceramic heat barrier coating
CN101748385B (en) * 2008-12-22 2012-05-09 深超光电（深圳）有限公司 Substrate processing device for chemical vapor deposition (CVD)
JP2012049220A (en) * 2010-08-25 2012-03-08 Mitsui Eng & Shipbuild Co Ltd Plasma resistant member and method for recycling the same
KR101671671B1 (en) * 2016-05-25 2016-11-01 주식회사 티씨케이 Reproducing method of part for semiconductor manufactoring, reproducing apparatus and reproduced part thereof
JP6812264B2 (en) * 2017-02-16 2021-01-13 東京エレクトロン株式会社 Vacuum processing equipment and maintenance equipment

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211700A (en) * 1994-01-24 1995-08-11 Sumitomo Metal Ind Ltd Electrode for plasma generation system and production thereof
KR0170907B1 (en) * 1995-10-25 1999-03-30 김주용 Method of manufacturing zero-defects layer of semiconductor device
KR100203129B1 (en) 1995-12-15 1999-06-15 김영환 Process for removal remnant defects in source/drain junction
JP3551867B2 (en) * 1999-11-09 2004-08-11 信越化学工業株式会社 Silicon focus ring and manufacturing method thereof
US6890861B1 (en) * 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
WO2003079404A2 (en) * 2002-03-12 2003-09-25 Tokyo Electron Limited An improved substrate holder for plasma processing
US20030198749A1 (en) * 2002-04-17 2003-10-23 Applied Materials, Inc. Coated silicon carbide cermet used in a plasma reactor
TW200416208A (en) * 2002-11-12 2004-09-01 Bridgestone Corp Silicon carbide sintered product and method for production the same
JP4432317B2 (en) * 2002-12-11 2010-03-17 信越半導体株式会社 Heat treatment method for silicon wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI622326B (en) * 2009-07-10 2018-04-21 Tokyo Electron Ltd Surface treatment method

Also Published As

Publication number Publication date
CN101244945B (en) 2013-05-29
KR20060052455A (en) 2006-05-19
CN101244945A (en) 2008-08-20
CN1790615A (en) 2006-06-21
TWI380360B (en) 2012-12-21
KR100735936B1 (en) 2007-07-06
CN100388418C (en) 2008-05-14
JP2006140238A (en) 2006-06-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees