TWI380360B - - Google Patents
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- Publication number
- TWI380360B TWI380360B TW094139134A TW94139134A TWI380360B TW I380360 B TWI380360 B TW I380360B TW 094139134 A TW094139134 A TW 094139134A TW 94139134 A TW94139134 A TW 94139134A TW I380360 B TWI380360 B TW I380360B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate processing
- processing apparatus
- gas
- ratio
- substrate
- Prior art date
Links
- 238000012545 processing Methods 0.000 claims description 165
- 239000000758 substrate Substances 0.000 claims description 124
- 230000007547 defect Effects 0.000 claims description 87
- 239000007789 gas Substances 0.000 claims description 60
- 238000004519 manufacturing process Methods 0.000 claims description 56
- 239000012535 impurity Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 45
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 41
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 41
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000011737 fluorine Substances 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 238000004611 spectroscopical analysis Methods 0.000 claims 1
- 239000011800 void material Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 description 32
- 230000005389 magnetism Effects 0.000 description 32
- 210000002381 plasma Anatomy 0.000 description 31
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 27
- 239000002245 particle Substances 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 26
- 239000010410 layer Substances 0.000 description 23
- 230000008569 process Effects 0.000 description 19
- 239000010419 fine particle Substances 0.000 description 17
- -1 fluoride ions Chemical class 0.000 description 17
- 238000011282 treatment Methods 0.000 description 14
- 238000012546 transfer Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 229910052707 ruthenium Inorganic materials 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 5
- 230000032683 aging Effects 0.000 description 4
- 238000003763 carbonization Methods 0.000 description 4
- 230000008030 elimination Effects 0.000 description 4
- 238000003379 elimination reaction Methods 0.000 description 4
- 239000003574 free electron Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- ZKEYULQFFYBZBG-UHFFFAOYSA-N lanthanum carbide Chemical compound [La].[C-]#[C] ZKEYULQFFYBZBG-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000011548 physical evaluation Methods 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000019617 pupation Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000011269 treatment regimen Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/0054—Plasma-treatment, e.g. with gas-discharge plasma
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004327077A JP2006140238A (ja) | 2004-11-10 | 2004-11-10 | 基板処理装置用部品及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200634924A TW200634924A (en) | 2006-10-01 |
| TWI380360B true TWI380360B (enExample) | 2012-12-21 |
Family
ID=36620872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094139134A TW200634924A (en) | 2004-11-10 | 2005-11-08 | Components for substrate processing apparatus and manufacturing method thereof |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2006140238A (enExample) |
| KR (1) | KR100735936B1 (enExample) |
| CN (2) | CN100388418C (enExample) |
| TW (1) | TW200634924A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100577866C (zh) * | 2007-02-27 | 2010-01-06 | 中微半导体设备(上海)有限公司 | 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法 |
| CN101357854B (zh) * | 2008-09-12 | 2012-07-25 | 西安交通大学 | 一种降低陶瓷热障涂层热导率的后处理方法 |
| CN101748385B (zh) * | 2008-12-22 | 2012-05-09 | 深超光电（深圳）有限公司 | 用于化学气相沉积(cvd)的基板处理设备 |
| JP5415853B2 (ja) * | 2009-07-10 | 2014-02-12 | 東京エレクトロン株式会社 | 表面処理方法 |
| JP2012049220A (ja) * | 2010-08-25 | 2012-03-08 | Mitsui Eng & Shipbuild Co Ltd | 耐プラズマ部材およびその再生方法 |
| KR101671671B1 (ko) | 2016-05-25 | 2016-11-01 | 주식회사 티씨케이 | 반도체 제조용 부품의 재생방법과 그 재생장치 및 재생부품 |
| JP6812264B2 (ja) * | 2017-02-16 | 2021-01-13 | 東京エレクトロン株式会社 | 真空処理装置、及びメンテナンス装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07211700A (ja) * | 1994-01-24 | 1995-08-11 | Sumitomo Metal Ind Ltd | プラズマ発生装置用電極及びその製造方法 |
| KR0170907B1 (ko) * | 1995-10-25 | 1999-03-30 | 김주용 | 반도체 소자의 무결함층 제조방법 |
| KR100203129B1 (ko) | 1995-12-15 | 1999-06-15 | 김영환 | 소오스/드레인 접합 잔류 결함 제거방법 |
| JP3551867B2 (ja) * | 1999-11-09 | 2004-08-11 | 信越化学工業株式会社 | シリコンフォーカスリング及びその製造方法 |
| US6890861B1 (en) * | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US20050120960A1 (en) * | 2002-03-12 | 2005-06-09 | Tokyo Electron Limited | Substrate holder for plasma processing |
| US20030198749A1 (en) * | 2002-04-17 | 2003-10-23 | Applied Materials, Inc. | Coated silicon carbide cermet used in a plasma reactor |
| TW200416208A (en) * | 2002-11-12 | 2004-09-01 | Bridgestone Corp | Silicon carbide sintered product and method for production the same |
| JP4432317B2 (ja) * | 2002-12-11 | 2010-03-17 | 信越半導体株式会社 | シリコンウエーハの熱処理方法 |
-
2004
- 2004-11-10 JP JP2004327077A patent/JP2006140238A/ja active Pending
-
2005
- 2005-11-04 KR KR1020050105199A patent/KR100735936B1/ko not_active Expired - Fee Related
- 2005-11-08 TW TW094139134A patent/TW200634924A/zh not_active IP Right Cessation
- 2005-11-10 CN CNB2005101177866A patent/CN100388418C/zh not_active Expired - Fee Related
- 2005-11-10 CN CN2007101650261A patent/CN101244945B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW200634924A (en) | 2006-10-01 |
| KR20060052455A (ko) | 2006-05-19 |
| CN100388418C (zh) | 2008-05-14 |
| CN101244945A (zh) | 2008-08-20 |
| JP2006140238A (ja) | 2006-06-01 |
| CN101244945B (zh) | 2013-05-29 |
| CN1790615A (zh) | 2006-06-21 |
| KR100735936B1 (ko) | 2007-07-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |