TW200634924A - Components for substrate processing apparatus and manufacturing method thereof - Google Patents

Components for substrate processing apparatus and manufacturing method thereof

Info

Publication number
TW200634924A
TW200634924A TW094139134A TW94139134A TW200634924A TW 200634924 A TW200634924 A TW 200634924A TW 094139134 A TW094139134 A TW 094139134A TW 94139134 A TW94139134 A TW 94139134A TW 200634924 A TW200634924 A TW 200634924A
Authority
TW
Taiwan
Prior art keywords
focus ring
vicinity
impurities
manufacturing
components
Prior art date
Application number
TW094139134A
Other languages
English (en)
Chinese (zh)
Other versions
TWI380360B (enExample
Inventor
Tsuyoshi Moriya
Kouji Mitsuhashi
Akira Uedono
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200634924A publication Critical patent/TW200634924A/zh
Application granted granted Critical
Publication of TWI380360B publication Critical patent/TWI380360B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0054—Plasma-treatment, e.g. with gas-discharge plasma
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
TW094139134A 2004-11-10 2005-11-08 Components for substrate processing apparatus and manufacturing method thereof TW200634924A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004327077A JP2006140238A (ja) 2004-11-10 2004-11-10 基板処理装置用部品及びその製造方法

Publications (2)

Publication Number Publication Date
TW200634924A true TW200634924A (en) 2006-10-01
TWI380360B TWI380360B (enExample) 2012-12-21

Family

ID=36620872

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094139134A TW200634924A (en) 2004-11-10 2005-11-08 Components for substrate processing apparatus and manufacturing method thereof

Country Status (4)

Country Link
JP (1) JP2006140238A (enExample)
KR (1) KR100735936B1 (enExample)
CN (2) CN100388418C (enExample)
TW (1) TW200634924A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI622326B (zh) * 2009-07-10 2018-04-21 Tokyo Electron Ltd Surface treatment method

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100577866C (zh) * 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
CN101357854B (zh) * 2008-09-12 2012-07-25 西安交通大学 一种降低陶瓷热障涂层热导率的后处理方法
CN101748385B (zh) * 2008-12-22 2012-05-09 深超光电（深圳）有限公司 用于化学气相沉积(cvd)的基板处理设备
JP2012049220A (ja) * 2010-08-25 2012-03-08 Mitsui Eng & Shipbuild Co Ltd 耐プラズマ部材およびその再生方法
KR101671671B1 (ko) 2016-05-25 2016-11-01 주식회사 티씨케이 반도체 제조용 부품의 재생방법과 그 재생장치 및 재생부품
JP6812264B2 (ja) * 2017-02-16 2021-01-13 東京エレクトロン株式会社 真空処理装置、及びメンテナンス装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211700A (ja) * 1994-01-24 1995-08-11 Sumitomo Metal Ind Ltd プラズマ発生装置用電極及びその製造方法
KR0170907B1 (ko) * 1995-10-25 1999-03-30 김주용 반도체 소자의 무결함층 제조방법
KR100203129B1 (ko) 1995-12-15 1999-06-15 김영환 소오스/드레인 접합 잔류 결함 제거방법
JP3551867B2 (ja) * 1999-11-09 2004-08-11 信越化学工業株式会社 シリコンフォーカスリング及びその製造方法
US6890861B1 (en) * 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US20050120960A1 (en) * 2002-03-12 2005-06-09 Tokyo Electron Limited Substrate holder for plasma processing
US20030198749A1 (en) * 2002-04-17 2003-10-23 Applied Materials, Inc. Coated silicon carbide cermet used in a plasma reactor
TW200416208A (en) * 2002-11-12 2004-09-01 Bridgestone Corp Silicon carbide sintered product and method for production the same
JP4432317B2 (ja) * 2002-12-11 2010-03-17 信越半導体株式会社 シリコンウエーハの熱処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI622326B (zh) * 2009-07-10 2018-04-21 Tokyo Electron Ltd Surface treatment method

Also Published As

Publication number Publication date
TWI380360B (enExample) 2012-12-21
KR20060052455A (ko) 2006-05-19
CN100388418C (zh) 2008-05-14
CN101244945A (zh) 2008-08-20
JP2006140238A (ja) 2006-06-01
CN101244945B (zh) 2013-05-29
CN1790615A (zh) 2006-06-21
KR100735936B1 (ko) 2007-07-06

Similar Documents

Publication Publication Date Title
WO2009044693A1 (ja) プラズマ処理装置及びプラズマ処理方法
TW200631080A (en) Fabricating method of semiconductor device and substrate processing device
JP5015419B2 (ja) 半導体製造プロセスに使用される金属炭化物基体の表面処理方法、および金属炭化物基体
WO2013098702A3 (en) Mixed mode pulsing etching in plasma processing systems
TW200702485A (en) Low temperature plasma deposition process for carbon layer deposition
GB2486086B (en) Methods and apparatus for protecting plasma chamber surfaces
TW201129719A (en) Microelectronic processing component having corrosion-resistant layer, microelectronic workpiece processing apparatus incorporating same, and method of forming an article having the corrosion-resistant layer
SG171631A1 (en) A method for the manufacture of a coating
TW200634924A (en) Components for substrate processing apparatus and manufacturing method thereof
SG136917A1 (en) Method for removing masking materials with reduced low-k dielectric material damage
WO2004081258A3 (en) Apparatus and method for non-contact cleaning of a surface
TW200733230A (en) Semiconductor processing
US20140030892A1 (en) Method for manufacturing silicon carbide substrate
TW200736423A (en) Silicon wafer and method for producing same
TW200943398A (en) Novel treatment and system for mask surface chemical reduction
TW200629354A (en) Method for manufacturing semiconductor device and substrate processing apparatus
TW200634925A (en) Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
TW200627541A (en) Focus ring, plasma etching apparatus and plasma etching method
TW200739927A (en) High frequency diode and method for producing same
SG170676A1 (en) Epitaxial wafer and production method thereof
WO2010062419A3 (en) Diamond bodies grown on sic substrates and associated methods
WO2002081788A3 (en) Method for h2 recycling in semiconductor processing system
WO2008117777A1 (ja) カーボンナノウォールの製造方法
TW200516169A (en) Processing apparatus and method
GB0514888D0 (en) Glass etching

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees