CN100380682C - 半导体装置的接触部分及其制造方法,包括接触部分的显示装置用薄膜晶体管阵列板及其制造方法 - Google Patents
半导体装置的接触部分及其制造方法,包括接触部分的显示装置用薄膜晶体管阵列板及其制造方法 Download PDFInfo
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- CN100380682C CN100380682C CNB028284933A CN02828493A CN100380682C CN 100380682 C CN100380682 C CN 100380682C CN B028284933 A CNB028284933 A CN B028284933A CN 02828493 A CN02828493 A CN 02828493A CN 100380682 C CN100380682 C CN 100380682C
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
- G02F1/133555—Transflectors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR12086/02 | 2002-03-07 | ||
KR12086/2002 | 2002-03-07 | ||
KR20020012086 | 2002-03-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1623235A CN1623235A (zh) | 2005-06-01 |
CN100380682C true CN100380682C (zh) | 2008-04-09 |
Family
ID=27785996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028284933A Expired - Lifetime CN100380682C (zh) | 2002-03-07 | 2002-04-30 | 半导体装置的接触部分及其制造方法,包括接触部分的显示装置用薄膜晶体管阵列板及其制造方法 |
Country Status (5)
Country | Link |
---|---|
KR (1) | KR100885022B1 (ko) |
CN (1) | CN100380682C (ko) |
AU (1) | AU2002255377A1 (ko) |
TW (1) | TW578240B (ko) |
WO (1) | WO2003075356A1 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101023978B1 (ko) * | 2004-03-18 | 2011-03-28 | 삼성전자주식회사 | 반투과 액정표시장치의 제조방법과 이에 의한 액정표시장치 |
KR100647775B1 (ko) * | 2004-12-01 | 2006-11-23 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 기판 및 제조 방법 |
KR100730161B1 (ko) * | 2005-11-11 | 2007-06-19 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 이를 구비한 평판 디스플레이장치 |
KR101201972B1 (ko) * | 2006-06-30 | 2012-11-15 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 이의 제조 방법 |
KR20130114996A (ko) * | 2012-04-10 | 2013-10-21 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조방법 |
KR20180066948A (ko) | 2016-12-09 | 2018-06-20 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
US10589980B2 (en) * | 2017-04-07 | 2020-03-17 | Texas Instruments Incorporated | Isolated protrusion/recession features in a micro electro mechanical system |
KR102450621B1 (ko) * | 2017-10-12 | 2022-10-06 | 삼성디스플레이 주식회사 | 표시 장치 |
CN109671669A (zh) * | 2018-12-25 | 2019-04-23 | 信利半导体有限公司 | 过孔加工方法、基板结构及显示装置 |
WO2021022461A1 (zh) * | 2019-08-05 | 2021-02-11 | 厦门三安光电有限公司 | 一种倒装发光二极管 |
CN111244144B (zh) * | 2020-01-20 | 2022-05-20 | 京东方科技集团股份有限公司 | 显示基板、显示装置及显示基板的制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001032086A (ja) * | 1999-05-18 | 2001-02-06 | Sharp Corp | 電気配線の製造方法および配線基板および表示装置および画像検出器 |
CN1290922A (zh) * | 1999-09-30 | 2001-04-11 | 三星电子株式会社 | 用于液晶显示器的薄膜晶体管阵列屏板及其制造方法 |
KR20010046652A (ko) * | 1999-11-15 | 2001-06-15 | 구본준 | 컬러필터를 포함한 액정표시장치와 제조방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60178660A (ja) * | 1984-02-24 | 1985-09-12 | Nec Corp | 半導体装置 |
US5621556A (en) * | 1994-04-28 | 1997-04-15 | Xerox Corporation | Method of manufacturing active matrix LCD using five masks |
JP3270674B2 (ja) * | 1995-01-17 | 2002-04-02 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
JP3980156B2 (ja) * | 1998-02-26 | 2007-09-26 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置 |
JP3062491B2 (ja) * | 1998-03-26 | 2000-07-10 | 松下電器産業株式会社 | 配線構造体の形成方法 |
KR100635685B1 (ko) * | 1998-05-25 | 2006-10-17 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체장치 및 그 제조방법 |
US6297519B1 (en) * | 1998-08-28 | 2001-10-02 | Fujitsu Limited | TFT substrate with low contact resistance and damage resistant terminals |
JP2001007203A (ja) * | 1999-06-22 | 2001-01-12 | Sony Corp | 半導体装置の製造方法 |
KR100443828B1 (ko) * | 2000-05-25 | 2004-08-09 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그의 제조방법 |
KR100684578B1 (ko) * | 2000-06-13 | 2007-02-20 | 엘지.필립스 엘시디 주식회사 | 반사투과형 액정표시장치용 어레이기판과 그 제조방법 |
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2002
- 2002-04-30 AU AU2002255377A patent/AU2002255377A1/en not_active Abandoned
- 2002-04-30 CN CNB028284933A patent/CN100380682C/zh not_active Expired - Lifetime
- 2002-04-30 WO PCT/KR2002/000805 patent/WO2003075356A1/en not_active Application Discontinuation
- 2002-05-07 TW TW091109515A patent/TW578240B/zh not_active IP Right Cessation
- 2002-11-01 KR KR1020020067502A patent/KR100885022B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001032086A (ja) * | 1999-05-18 | 2001-02-06 | Sharp Corp | 電気配線の製造方法および配線基板および表示装置および画像検出器 |
CN1290922A (zh) * | 1999-09-30 | 2001-04-11 | 三星电子株式会社 | 用于液晶显示器的薄膜晶体管阵列屏板及其制造方法 |
KR20010046652A (ko) * | 1999-11-15 | 2001-06-15 | 구본준 | 컬러필터를 포함한 액정표시장치와 제조방법 |
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KR100885022B1 (ko) | 2009-02-20 |
WO2003075356A1 (en) | 2003-09-12 |
TW578240B (en) | 2004-03-01 |
KR20030074089A (ko) | 2003-09-19 |
AU2002255377A1 (en) | 2003-09-16 |
CN1623235A (zh) | 2005-06-01 |
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