AU2002255377A1 - Contact portion of semiconductor device, and method for manufacturing the same, thin film transistor array panel for display device including the contact portion, and method for manufacturing the same - Google Patents

Contact portion of semiconductor device, and method for manufacturing the same, thin film transistor array panel for display device including the contact portion, and method for manufacturing the same

Info

Publication number
AU2002255377A1
AU2002255377A1 AU2002255377A AU2002255377A AU2002255377A1 AU 2002255377 A1 AU2002255377 A1 AU 2002255377A1 AU 2002255377 A AU2002255377 A AU 2002255377A AU 2002255377 A AU2002255377 A AU 2002255377A AU 2002255377 A1 AU2002255377 A1 AU 2002255377A1
Authority
AU
Australia
Prior art keywords
manufacturing
contact portion
same
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002255377A
Other languages
English (en)
Inventor
Chun-Gi You
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of AU2002255377A1 publication Critical patent/AU2002255377A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G02F1/133555—Transflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Crystal (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
AU2002255377A 2002-03-07 2002-04-30 Contact portion of semiconductor device, and method for manufacturing the same, thin film transistor array panel for display device including the contact portion, and method for manufacturing the same Abandoned AU2002255377A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20020012086 2002-03-07
KR2002/12086 2002-03-07
PCT/KR2002/000805 WO2003075356A1 (en) 2002-03-07 2002-04-30 Contact portion of semiconductor device, and method for manufacturing the same, thin film transistor array panel for display device including the contact portion, and method for manufacturing the same

Publications (1)

Publication Number Publication Date
AU2002255377A1 true AU2002255377A1 (en) 2003-09-16

Family

ID=27785996

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002255377A Abandoned AU2002255377A1 (en) 2002-03-07 2002-04-30 Contact portion of semiconductor device, and method for manufacturing the same, thin film transistor array panel for display device including the contact portion, and method for manufacturing the same

Country Status (5)

Country Link
KR (1) KR100885022B1 (ko)
CN (1) CN100380682C (ko)
AU (1) AU2002255377A1 (ko)
TW (1) TW578240B (ko)
WO (1) WO2003075356A1 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101023978B1 (ko) * 2004-03-18 2011-03-28 삼성전자주식회사 반투과 액정표시장치의 제조방법과 이에 의한 액정표시장치
KR100647775B1 (ko) * 2004-12-01 2006-11-23 엘지.필립스 엘시디 주식회사 박막 트랜지스터 기판 및 제조 방법
KR100730161B1 (ko) * 2005-11-11 2007-06-19 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 구비한 평판 디스플레이장치
KR101201972B1 (ko) * 2006-06-30 2012-11-15 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 이의 제조 방법
KR20130114996A (ko) * 2012-04-10 2013-10-21 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
KR20180066948A (ko) 2016-12-09 2018-06-20 삼성디스플레이 주식회사 유기 발광 표시 장치
US10589980B2 (en) * 2017-04-07 2020-03-17 Texas Instruments Incorporated Isolated protrusion/recession features in a micro electro mechanical system
KR102450621B1 (ko) * 2017-10-12 2022-10-06 삼성디스플레이 주식회사 표시 장치
CN109671669A (zh) * 2018-12-25 2019-04-23 信利半导体有限公司 过孔加工方法、基板结构及显示装置
CN111480241B (zh) * 2019-08-05 2024-08-30 厦门三安光电有限公司 一种倒装发光二极管
CN111244144B (zh) * 2020-01-20 2022-05-20 京东方科技集团股份有限公司 显示基板、显示装置及显示基板的制作方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60178660A (ja) * 1984-02-24 1985-09-12 Nec Corp 半導体装置
US5621556A (en) * 1994-04-28 1997-04-15 Xerox Corporation Method of manufacturing active matrix LCD using five masks
JP3270674B2 (ja) * 1995-01-17 2002-04-02 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
JP3980156B2 (ja) * 1998-02-26 2007-09-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
JP3062491B2 (ja) * 1998-03-26 2000-07-10 松下電器産業株式会社 配線構造体の形成方法
KR100635685B1 (ko) * 1998-05-25 2006-10-17 가부시키가이샤 히타치세이사쿠쇼 반도체장치 및 그 제조방법
US6297519B1 (en) * 1998-08-28 2001-10-02 Fujitsu Limited TFT substrate with low contact resistance and damage resistant terminals
JP3479023B2 (ja) * 1999-05-18 2003-12-15 シャープ株式会社 電気配線の製造方法および配線基板および表示装置および画像検出器
JP2001007203A (ja) * 1999-06-22 2001-01-12 Sony Corp 半導体装置の製造方法
CN1195243C (zh) * 1999-09-30 2005-03-30 三星电子株式会社 用于液晶显示器的薄膜晶体管阵列屏板及其制造方法
KR100638525B1 (ko) * 1999-11-15 2006-10-25 엘지.필립스 엘시디 주식회사 컬러 액정표시장치용 어레이기판 제조방법
KR100443828B1 (ko) * 2000-05-25 2004-08-09 엘지.필립스 엘시디 주식회사 액정표시소자 및 그의 제조방법
KR100684578B1 (ko) * 2000-06-13 2007-02-20 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치용 어레이기판과 그 제조방법

Also Published As

Publication number Publication date
KR20030074089A (ko) 2003-09-19
TW578240B (en) 2004-03-01
CN100380682C (zh) 2008-04-09
KR100885022B1 (ko) 2009-02-20
CN1623235A (zh) 2005-06-01
WO2003075356A1 (en) 2003-09-12

Similar Documents

Publication Publication Date Title
AU2002329100A1 (en) Method for manufacturing thin film transistor array panel for display device
TWI366269B (en) Thin film transistor array panel using organic semiconductor and a method for manufacturing the same
AU2002246410A1 (en) A contact structure of a wiring line and method manufacturing the same, and thin film transistor array substrate including the contact structure and method manufacturing the same
AU2002313948A1 (en) A wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same
AU2002367339A1 (en) A thin film transistor array panel and a method for manufacturing the same
TWI348568B (en) Thin film transistor array panel and manufacturing method thereof
AU2002321847A1 (en) A wire for a display device, a method for manufacturing the same, a thin film transistor array panel including the wire, and a method for manufacturing the same
SG96637A1 (en) Thin film transistor, method of producing the transistor, thin film transistor array substrate, liquid crystal display device, and electroluminescent display device
TWI348041B (en) Thin film transistor array panel
EP1543546B8 (en) Process for fabricating an isolated field effect transistor in an epi-less substrate
AU2002329098A1 (en) An etchant for a wiring, a method for manufacturing the wiring using the etchant, a thin film transistor array panel including the wiring, and a method for manufacturing the same
TWI366052B (en) Liquid crystal display, thin film transistor array panel therefor, and manufacturing method thereof
SG102643A1 (en) Thin film transistor array, method of producing the same, and display panel using the same
AU2003242012A1 (en) Semiconductor device and method for fabricating the same
TWI347677B (en) Thin film transistor array panel and manufacturing method thereof
TWI366054B (en) Contact structure of conductive films and thin film transistor array panel including the same
SG115478A1 (en) Thin film transistor and method for manufacturing the same
AU2002328455A1 (en) Thin film transistor array panel
AU2003207387A1 (en) Organic semiconductor device and method for manufacturing the same
TWI368326B (en) Thin film transistor array panel and manufacturing method thereof
EP1691340A4 (en) INTEGRATED THIN FILM TRANSISTOR SWITCHING DEVICE, ACTIVE MATRIX DISPLAY EQUIPMENT AND MANUFACTURING METHOD THEREFOR
AU2002255377A1 (en) Contact portion of semiconductor device, and method for manufacturing the same, thin film transistor array panel for display device including the contact portion, and method for manufacturing the same
AU2003212673A1 (en) Thin film transistor array panel and method manufacturing thereof
AU2003268710A1 (en) Semiconductor device and process for fabricating the same
AU2002354318A1 (en) Method for producing semiconductor substrate and method for fabricating field effect transistor and semiconductor substrate and field effect transistor

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase