CN100380661C - 分栅式功率模块以及用于抑制其中振荡的方法 - Google Patents

分栅式功率模块以及用于抑制其中振荡的方法 Download PDF

Info

Publication number
CN100380661C
CN100380661C CNB03802909XA CN03802909A CN100380661C CN 100380661 C CN100380661 C CN 100380661C CN B03802909X A CNB03802909X A CN B03802909XA CN 03802909 A CN03802909 A CN 03802909A CN 100380661 C CN100380661 C CN 100380661C
Authority
CN
China
Prior art keywords
grid
array
tube core
area
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB03802909XA
Other languages
English (en)
Chinese (zh)
Other versions
CN1625807A (zh
Inventor
理查德·B·弗雷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsemi Corp Power Products Group
Microsemi Corp
Original Assignee
Microsemi Corp
Advanced Power Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microsemi Corp, Advanced Power Technology Inc filed Critical Microsemi Corp
Publication of CN1625807A publication Critical patent/CN1625807A/zh
Application granted granted Critical
Publication of CN100380661C publication Critical patent/CN100380661C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/216—Waveguides, e.g. strip lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/255—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for operation at multiple different frequencies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Amplifiers (AREA)
  • Wire Bonding (AREA)
  • Current-Collector Devices For Electrically Propelled Vehicles (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Inverter Devices (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
CNB03802909XA 2002-01-29 2003-01-27 分栅式功率模块以及用于抑制其中振荡的方法 Expired - Fee Related CN100380661C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35380902P 2002-01-29 2002-01-29
US60/353,809 2002-01-29

Publications (2)

Publication Number Publication Date
CN1625807A CN1625807A (zh) 2005-06-08
CN100380661C true CN100380661C (zh) 2008-04-09

Family

ID=27663256

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB03802909XA Expired - Fee Related CN100380661C (zh) 2002-01-29 2003-01-27 分栅式功率模块以及用于抑制其中振荡的方法

Country Status (8)

Country Link
US (2) US6939743B2 (https=)
EP (1) EP1470588B1 (https=)
JP (1) JP4732692B2 (https=)
KR (1) KR20040085169A (https=)
CN (1) CN100380661C (https=)
AT (1) ATE339013T1 (https=)
DE (1) DE60308148T2 (https=)
WO (1) WO2003065454A2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4342232B2 (ja) * 2003-07-11 2009-10-14 三菱電機株式会社 半導体パワーモジュールおよび該モジュールの主回路電流値を計測する主回路電流計測システム
GB201105912D0 (en) * 2011-04-07 2011-05-18 Diamond Microwave Devices Ltd Improved matching techniques for power transistors
US8581660B1 (en) * 2012-04-24 2013-11-12 Texas Instruments Incorporated Power transistor partial current sensing for high precision applications
CN104380463B (zh) * 2012-06-19 2017-05-10 Abb 技术有限公司 用于将多个功率晶体管安装在其上的衬底和功率半导体模块
DE102014111931B4 (de) * 2014-08-20 2021-07-08 Infineon Technologies Ag Niederinduktive Schaltungsanordnung mit Laststromsammelleiterbahn
EP3555914B1 (en) * 2016-12-16 2021-02-03 ABB Schweiz AG Power semiconductor module with low gate path inductance
JP6838243B2 (ja) 2017-09-29 2021-03-03 日立Astemo株式会社 電力変換装置
DE102019112936A1 (de) 2019-05-16 2020-11-19 Danfoss Silicon Power Gmbh Halbleitermodul
DE102019112935B4 (de) 2019-05-16 2021-04-29 Danfoss Silicon Power Gmbh Halbleitermodul
DE102019114040A1 (de) 2019-05-26 2020-11-26 Danfoss Silicon Power Gmbh Dreistufiges Leistungsmodul
JP6772355B1 (ja) * 2019-10-15 2020-10-21 株式会社京三製作所 スイッチングモジュール
JP7351209B2 (ja) 2019-12-17 2023-09-27 富士電機株式会社 半導体装置
JP7484156B2 (ja) 2019-12-18 2024-05-16 富士電機株式会社 半導体装置
EP4102559B1 (en) 2021-06-10 2026-04-22 Hitachi Energy Ltd Power semiconductor module
DE102022134657A1 (de) 2022-12-22 2024-06-27 Valeo Eautomotive Germany Gmbh Leistungsmodul, elektrischer Leistungswandler und elektrischer Antrieb für ein Transportmittel

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4907068A (en) * 1987-01-21 1990-03-06 Siemens Aktiengesellschaft Semiconductor arrangement having at least one semiconductor body
US5563447A (en) * 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module
US5731970A (en) * 1989-12-22 1998-03-24 Hitachi, Ltd. Power conversion device and semiconductor module suitable for use in the device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639760A (en) 1986-01-21 1987-01-27 Motorola, Inc. High power RF transistor assembly
JP2751707B2 (ja) * 1992-01-29 1998-05-18 株式会社日立製作所 半導体モジュール及びそれを使った電力変換装置
JPH04183001A (ja) * 1990-11-16 1992-06-30 Mitsubishi Electric Corp マイクロ波ｉｃ用パッケージ
JPH0575314A (ja) * 1991-09-13 1993-03-26 Matsushita Electron Corp マイクロ波集積回路素子
JP3053298B2 (ja) * 1992-08-19 2000-06-19 株式会社東芝 半導体装置
DE59304797D1 (de) * 1992-08-26 1997-01-30 Eupec Gmbh & Co Kg Leistungshalbleiter-Modul
US6291878B1 (en) * 1993-04-22 2001-09-18 Sundstrand Corporation Package for multiple high power electrical components
JP2973799B2 (ja) * 1993-04-23 1999-11-08 富士電機株式会社 パワートランジスタモジュール
DE19644009A1 (de) 1996-10-31 1998-05-07 Siemens Ag Großflächiges Hochstrommodul eines feldgesteuerten, abschaltbaren Leistungs-Halbleiterschalters
JP2000323647A (ja) * 1999-05-12 2000-11-24 Toshiba Corp モジュール型半導体装置及びその製造方法
JP4163818B2 (ja) * 1999-07-07 2008-10-08 三菱電機株式会社 内部整合型トランジスタ
JP4138192B2 (ja) * 1999-12-27 2008-08-20 三菱電機株式会社 半導体スイッチ装置
US6617679B2 (en) * 2002-02-08 2003-09-09 Advanced Energy Industries, Inc. Semiconductor package for multiple high power transistors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4907068A (en) * 1987-01-21 1990-03-06 Siemens Aktiengesellschaft Semiconductor arrangement having at least one semiconductor body
US5731970A (en) * 1989-12-22 1998-03-24 Hitachi, Ltd. Power conversion device and semiconductor module suitable for use in the device
US5563447A (en) * 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module

Also Published As

Publication number Publication date
DE60308148T2 (de) 2007-08-16
JP2006502560A (ja) 2006-01-19
US7342262B2 (en) 2008-03-11
EP1470588A2 (en) 2004-10-27
WO2003065454A2 (en) 2003-08-07
JP4732692B2 (ja) 2011-07-27
US6939743B2 (en) 2005-09-06
ATE339013T1 (de) 2006-09-15
DE60308148D1 (de) 2006-10-19
EP1470588B1 (en) 2006-09-06
CN1625807A (zh) 2005-06-08
US20030141587A1 (en) 2003-07-31
WO2003065454A3 (en) 2004-02-26
KR20040085169A (ko) 2004-10-07
US20050218500A1 (en) 2005-10-06

Similar Documents

Publication Publication Date Title
CN100380661C (zh) 分栅式功率模块以及用于抑制其中振荡的方法
CN100459121C (zh) 具内部偏馈射频功率晶体管
US7068521B2 (en) Semiconductor device
CN1211858C (zh) 高频功率晶体管器件
US6514794B2 (en) Redistributed bond pads in stacked integrated circuit die package
CN109616451B (zh) 具有单个金属法兰的多腔封装件
US8295057B2 (en) Semiconductor device
CN104681552B (zh) 封装rf功率晶体管器件和rf功率放大器
CN101615633A (zh) 具有热端子的串并联开关
US6414387B1 (en) Semiconductor device including a chip having high-frequency circuit blocks
JP2006502560A5 (https=)
EP2509105A1 (en) Semiconductor device having improved performance for high RF output powers
US6856004B2 (en) Compact layout for a semiconductor device
JP4054456B2 (ja) 高周波増幅器
CN114334918A (zh) 混合单片微波集成电路及其制作方法
CN113422589A (zh) 一种声表滤波器件
JP2880023B2 (ja) 高周波トランジスタ回路
CN119943821A (zh) 一种芯片封装结构和电子设备
JP2005051062A (ja) 半導体装置
JPH11204728A (ja) 高周波半導体装置
CN118868826A (zh) 射频功放器件及其制造方法
JP2870503B2 (ja) ヘテロ接合バイポーラトランジスタ
CN110752195A (zh) 射频功率芯片封装结构
JPS63160238A (ja) 半導体装置
JPS647682B2 (https=)

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080409

Termination date: 20100301