DE60308148T2 - Leistungsmodul mit geteiltem gatter und methode zur unterdrückung von schwingungen darin - Google Patents

Leistungsmodul mit geteiltem gatter und methode zur unterdrückung von schwingungen darin Download PDF

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Publication number
DE60308148T2
DE60308148T2 DE60308148T DE60308148T DE60308148T2 DE 60308148 T2 DE60308148 T2 DE 60308148T2 DE 60308148 T DE60308148 T DE 60308148T DE 60308148 T DE60308148 T DE 60308148T DE 60308148 T2 DE60308148 T2 DE 60308148T2
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DE
Germany
Prior art keywords
gate
substrate
region
array
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60308148T
Other languages
German (de)
English (en)
Other versions
DE60308148D1 (de
Inventor
B. Richard Bend FREY
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsemi Corp
Original Assignee
Advanced Power Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Power Technology Inc filed Critical Advanced Power Technology Inc
Application granted granted Critical
Publication of DE60308148D1 publication Critical patent/DE60308148D1/de
Publication of DE60308148T2 publication Critical patent/DE60308148T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/216—Waveguides, e.g. strip lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/255—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for operation at multiple different frequencies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Amplifiers (AREA)
  • Wire Bonding (AREA)
  • Current-Collector Devices For Electrically Propelled Vehicles (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Inverter Devices (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
DE60308148T 2002-01-29 2003-01-27 Leistungsmodul mit geteiltem gatter und methode zur unterdrückung von schwingungen darin Expired - Fee Related DE60308148T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35380902P 2002-01-29 2002-01-29
US353809P 2002-01-29
PCT/US2003/002326 WO2003065454A2 (en) 2002-01-29 2003-01-27 Split-gate power module and method for suppressing oscillation therein

Publications (2)

Publication Number Publication Date
DE60308148D1 DE60308148D1 (de) 2006-10-19
DE60308148T2 true DE60308148T2 (de) 2007-08-16

Family

ID=27663256

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60308148T Expired - Fee Related DE60308148T2 (de) 2002-01-29 2003-01-27 Leistungsmodul mit geteiltem gatter und methode zur unterdrückung von schwingungen darin

Country Status (8)

Country Link
US (2) US6939743B2 (https=)
EP (1) EP1470588B1 (https=)
JP (1) JP4732692B2 (https=)
KR (1) KR20040085169A (https=)
CN (1) CN100380661C (https=)
AT (1) ATE339013T1 (https=)
DE (1) DE60308148T2 (https=)
WO (1) WO2003065454A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11127695B2 (en) 2017-09-29 2021-09-21 Hitachi Automotive Systems, Ltd. Power conversion device for reducing an inductance difference between control signal wires of a power semiconductor and suppressing a current unbalancing of the control signals

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4342232B2 (ja) * 2003-07-11 2009-10-14 三菱電機株式会社 半導体パワーモジュールおよび該モジュールの主回路電流値を計測する主回路電流計測システム
GB201105912D0 (en) * 2011-04-07 2011-05-18 Diamond Microwave Devices Ltd Improved matching techniques for power transistors
US8581660B1 (en) * 2012-04-24 2013-11-12 Texas Instruments Incorporated Power transistor partial current sensing for high precision applications
CN104380463B (zh) * 2012-06-19 2017-05-10 Abb 技术有限公司 用于将多个功率晶体管安装在其上的衬底和功率半导体模块
DE102014111931B4 (de) * 2014-08-20 2021-07-08 Infineon Technologies Ag Niederinduktive Schaltungsanordnung mit Laststromsammelleiterbahn
EP3555914B1 (en) * 2016-12-16 2021-02-03 ABB Schweiz AG Power semiconductor module with low gate path inductance
DE102019112936A1 (de) 2019-05-16 2020-11-19 Danfoss Silicon Power Gmbh Halbleitermodul
DE102019112935B4 (de) 2019-05-16 2021-04-29 Danfoss Silicon Power Gmbh Halbleitermodul
DE102019114040A1 (de) 2019-05-26 2020-11-26 Danfoss Silicon Power Gmbh Dreistufiges Leistungsmodul
JP6772355B1 (ja) * 2019-10-15 2020-10-21 株式会社京三製作所 スイッチングモジュール
JP7351209B2 (ja) 2019-12-17 2023-09-27 富士電機株式会社 半導体装置
JP7484156B2 (ja) 2019-12-18 2024-05-16 富士電機株式会社 半導体装置
EP4102559B1 (en) 2021-06-10 2026-04-22 Hitachi Energy Ltd Power semiconductor module
DE102022134657A1 (de) 2022-12-22 2024-06-27 Valeo Eautomotive Germany Gmbh Leistungsmodul, elektrischer Leistungswandler und elektrischer Antrieb für ein Transportmittel

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639760A (en) 1986-01-21 1987-01-27 Motorola, Inc. High power RF transistor assembly
US4907068A (en) * 1987-01-21 1990-03-06 Siemens Aktiengesellschaft Semiconductor arrangement having at least one semiconductor body
JP2751707B2 (ja) * 1992-01-29 1998-05-18 株式会社日立製作所 半導体モジュール及びそれを使った電力変換装置
US5731970A (en) * 1989-12-22 1998-03-24 Hitachi, Ltd. Power conversion device and semiconductor module suitable for use in the device
JPH04183001A (ja) * 1990-11-16 1992-06-30 Mitsubishi Electric Corp マイクロ波ｉｃ用パッケージ
JPH0575314A (ja) * 1991-09-13 1993-03-26 Matsushita Electron Corp マイクロ波集積回路素子
JP3053298B2 (ja) * 1992-08-19 2000-06-19 株式会社東芝 半導体装置
DE59304797D1 (de) * 1992-08-26 1997-01-30 Eupec Gmbh & Co Kg Leistungshalbleiter-Modul
US6291878B1 (en) * 1993-04-22 2001-09-18 Sundstrand Corporation Package for multiple high power electrical components
JP2973799B2 (ja) * 1993-04-23 1999-11-08 富士電機株式会社 パワートランジスタモジュール
US5563447A (en) 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module
DE19644009A1 (de) 1996-10-31 1998-05-07 Siemens Ag Großflächiges Hochstrommodul eines feldgesteuerten, abschaltbaren Leistungs-Halbleiterschalters
JP2000323647A (ja) * 1999-05-12 2000-11-24 Toshiba Corp モジュール型半導体装置及びその製造方法
JP4163818B2 (ja) * 1999-07-07 2008-10-08 三菱電機株式会社 内部整合型トランジスタ
JP4138192B2 (ja) * 1999-12-27 2008-08-20 三菱電機株式会社 半導体スイッチ装置
US6617679B2 (en) * 2002-02-08 2003-09-09 Advanced Energy Industries, Inc. Semiconductor package for multiple high power transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11127695B2 (en) 2017-09-29 2021-09-21 Hitachi Automotive Systems, Ltd. Power conversion device for reducing an inductance difference between control signal wires of a power semiconductor and suppressing a current unbalancing of the control signals
DE112018003628B4 (de) * 2017-09-29 2025-10-30 Hitachi Astemo, Ltd. Leistungsumsetzungsvorrichtung

Also Published As

Publication number Publication date
JP2006502560A (ja) 2006-01-19
US7342262B2 (en) 2008-03-11
EP1470588A2 (en) 2004-10-27
WO2003065454A2 (en) 2003-08-07
JP4732692B2 (ja) 2011-07-27
US6939743B2 (en) 2005-09-06
CN100380661C (zh) 2008-04-09
ATE339013T1 (de) 2006-09-15
DE60308148D1 (de) 2006-10-19
EP1470588B1 (en) 2006-09-06
CN1625807A (zh) 2005-06-08
US20030141587A1 (en) 2003-07-31
WO2003065454A3 (en) 2004-02-26
KR20040085169A (ko) 2004-10-07
US20050218500A1 (en) 2005-10-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MICROSEMI CORPORATION, BEND, OREG., US

8339 Ceased/non-payment of the annual fee