CN100356537C - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN100356537C
CN100356537C CNB2004100798643A CN200410079864A CN100356537C CN 100356537 C CN100356537 C CN 100356537C CN B2004100798643 A CNB2004100798643 A CN B2004100798643A CN 200410079864 A CN200410079864 A CN 200410079864A CN 100356537 C CN100356537 C CN 100356537C
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Prior art keywords
adhesive sheet
semiconductor device
diaphragm
wiring pattern
substrate
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Expired - Fee Related
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CNB2004100798643A
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CN1601713A (zh
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尾形义春
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Seiko Epson Corp
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Seiko Epson Corp
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

提供一种半导体装置的制造方法，在半导体装置所使用的基板上形成有布线图案和保护膜，该保护膜具有矩形开口，利用该开口之外的区域覆盖布线图案。在包括开口、该开口与保护膜的边界的范围，按照在布线图案与基板的段差中形成气泡那样，粘贴粘接片并加热软化。通过粘接片，将半导体元件粘接在基板上。保护膜，具有与开口的角部连通的槽，让粘接片避开至少一部分槽而进行粘贴，通过加热粘接片并让其软化，让气泡通过槽排出。

Description

半导体装置的制造方法
技术领域
本发明涉及半导体装置的制造方法。
背景技术
随着近年来电子设备的小型化，逐渐要求适于高密度安装的半导体装置的封装。为了满足这种要求，BGA(Ball Grid Array)和CSP(Chip Scale/Size Package)等表面安装型封装正在被开发。在表面安装型封装中，使用形成了与半导体元件连接的布线图案的基板。
在以往的表面安装型封装中，已知在基板的布线图案上用各向异性导电膜(也被称作ACF(Anisotropic Conductive Film)、各向异性导电片。)或者NCF(NonConductive Film)等的粘接片固定半导体元件的半导体装置(比如，参照特开2003-31602号公报)。
在以往的半导体装置的制造方法中，在基板的布线图案上用粘接片覆盖时，很难做到不出现在基板上的布线图案与粘接片之间进入空气而产生气泡(空隙)的情况。并且，在进行粘接片的固化或者回流焊而加热时，由于气泡的膨胀很难做到在粘接片上不出现裂缝。另外，由于裂缝的产生以及水分进入很难防止布线图案的迁移。
发明内容
本发明的目在于提供一种在用粘接片覆盖布线图案的结构中可靠性高的半导体装置的制造方法以及半导体装置、电路基板以及电子设备。
(1)有关本发明的半导体装置的制造方法，在半导体装置所使用的基板上形成有布线图案和保护膜，该保护膜具有矩形开口，利用该开口之外的区域覆盖所述布线图案，包括：从所述保护膜的上方到所述开口内，在所述基板的面上粘贴粘接片，使得所述开口内在所述布线图案与所述基板的段差中形成空隙的步骤；加热所述粘接片并让其软化的步骤；和通过所述粘接片，将半导体元件粘接在所述基板上的步骤；所述保护膜，具有与所述开口的角部连通的槽；让所述粘接片避开至少一部分所述槽而进行粘贴；通过加热所述粘接片并让其软化，让所述空隙通过所述槽排出。
根据本发明，通过保护膜的槽容易将在段差中的气泡排出到外部。因此，能够提供在用粘接片覆盖基板的布线图案的结构中很难在粘接片与基板之间进入空气、产生气泡(称作空隙)的、可靠性高的半导体装置的制造方法。
(2)在该半导体装置的制造方法中，所述粘接片也可以是排出所述空隙的多孔质的粘接片。
(3)有关本发明的半导体装置的制造方法，在半导体装置所使用的基板上形成有布线图案和保护膜，该保护膜具有矩形开口，利用该开口之外的区域覆盖所述布线图案，包括：从所述保护膜的上方到所述开口内，在所述基板的面上粘贴多孔质的粘接片，使得所述开口内在所述布线图案与所述基板的段差中形成空隙的步骤；加热所述粘接片并让其软化，通过所述多孔质的粘接片自身排出所述空隙的步骤；和通过所述粘接片，将半导体元件粘接在所述基板上。
根据本发明，容易从多孔质的粘接片的孔部将在段差中的气泡排出到外部。因此，能够提供在用粘接片覆盖基板的布线图案的结构中很难在粘接片与基板之间进入空气、产生气泡(称作空隙)的、可靠性高的半导体装置的制造方法。
(4)在该半导体装置的制造方法中，也可以在所述粘接片的端部形成多个切口。
(5)在该半导体装置的制造方法中，在所述保护膜的靠近所述开口的边界处设置所述切口。
(6)在该半导体装置的制造方法中，也可以在所述粘接片中分散有导电粒子，通过所述导电粒子将所述布线图案与电极电连接。
(7)在该半导体装置的制造方法中，所述粘接片也可以是绝缘片。
附图说明
图1A～图1D表示有关第1实施方式的半导体装置的制造方法的图。
图2表示有关第1实施方式的半导体装置的制造方法的图。
图3表示图2的III-III线截面图。
图4表示有关第2实施方式的半导体装置的制造方法的图。
图5表示有关第3实施方式的半导体装置的制造方法的图。
图6表示有关实施方式的半导体装置的制造方法的变形例图。
图7表示有关实施方式的半导体装置的制造方法的变形例图。
图8表示有关本发明实施方式的电路基板图。
图9表示有关本发明实施方式的电子设备图。
图10表示有关本发明实施方式的电子设备图。
具体实施方式
以下，参照附图对本发明的实施方式进行说明。
(第1实施方式)
图1A～图2表示有关本发明第1实施方式的半导体装置的制造方法的图。图3表示图2所示的半导体装置的III-III线截面图。
(1)在本实施方式中，如图1A所示，使用在至少一面上形成布线图案12的基板10。基板10可以是下述任一种构成：由柔性基板等的有机类材料构成，由金属类基板等的无机类材料构成，或者两者的组合。作为柔软性基板，也可以使用卷带式。基板10，形成通孔14。布线图案12，穿过通孔14形成。另外，作为布线图案12一部分，在基板上设置半导体元件20的电极连接用焊盘15，以及在通孔14上设置外部电极形成用的焊盘16。
(2)在基板10上形成保护膜30。保护膜30，担负覆盖布线图案12、保护布线图案12不受水分等影响的作用。保护膜30，比如，使用阻焊剂。在搭载基板10上的半导体元件20的矩形开口26以外的区域28上，按照覆盖在区域28中的布线图案12那样形成保护膜30。一般也可以将开口26设置为比半导体元件20的电极22所在面24的面积大。保护膜30，比如，也可以由树脂墨的印刷法(丝网印刷法)等形成。
此时，在保护膜30的矩形的开口26的角部形成槽32。槽32，与开口26的角部连通。一端连接在开口26的角部，且也可以按照达到在粘接片34的粘接范围外的相应位置那样形成另一端。在本实施方式中，虽然将槽32设置在4个角部，也可以设置在开口的4边上。另外，也可以有不设置槽32的角部或者边。槽32的底面，也可以与开口26在一面上，也可以留在保护膜30的层中。或者，槽32的底面，也可以是始于开口26的倾斜面。
(3)在形成上述保护膜30的基板10上，粘贴粘接片34。由于粘接片34介于半导体元件20与布线图案12之间，所以担负将半导体元件20固定在基板10上的作用。粘接片34也可以是各向异性导电膜(也被称作ACF(Anisotropic Conductive Film)、各向异性导电片。)、或者NCF(Non Conductive Film)。
各向异性导电膜，是将在粘接剂(粘合剂)中的导电粒子(导电填充物)分散的物质。另外，也存在添加分散剂的情况。在各向异性导电膜中，由于分散了导电粒子，通过导电粒子可以将布线图案12的电极连接用焊盘15和电极22电连接。还有，应用不包括导电粒子的粘接片(比如，NCF(Non Conductive Film)，通过加压，也能够将布线图案12的电极连接用焊盘15与电极22电连接。
作为粘接片34的粘接剂，可以使用以环氧树脂类为代表例的热固化型粘接剂，也可以使用以环氧树脂类或者丙稀酸酯类为代表例的光固化型粘接剂。进一步也可以使用电子线固化型、热可塑(热粘接)型的粘接剂。
在本实施方式中，如图1A所示，将粘接片34粘贴在包括搭载半导体元件20的开口26、和该开口26与保护膜30的边界的范围中。此时，也可以至少避开槽32的一部分粘贴粘接片34。，也可以按照槽32的尾端露出到粘接片34之外那样进行粘贴。在这之后，加热粘接片34并让其软化。比如，也可以放置于内置了第1加热器36的第1器具38上，让其充分软化。也可以放置在给定温度的恒温槽内让其软化。也可以单独加热粘接片34。关于采用热固化型粘接剂的粘接片34，用没有达到固化的温度加热。优选将粘接片34用60℃到100℃的温度，2分到1小时的保持时间加热。
粘接片34，软化后向重力方向垂下。软化的粘接片34，紧贴在布线图案12与基板10的段差以及布线图案12与保护膜30的段差上。通过软化的粘接片34，从每个段差或者缝隙挤压出的空气以及由于加热而膨胀的空气，从与保护膜30的开口26的4角部连通的槽32向外部排出。在该工序中，也可以将在段差中的全部气泡排出。
(4)如图1B所示，将半导体元件20搭载在软化的粘接片34上。具体地说，将半导体元件20的电极22所在的面24朝向粘接片34搭载。此时，按照与布线图案12的电极连接用焊盘15对位那样，将电极22配置在半导体元件20上。
(5)如图1(B)所示，将第2器具40压向与电极22所在面24相反的面25上，向基板10的方向加压半导体元件20。或者，在半导体20与基板10之间施加压力。根据该工序，半导体元件20的电极22与布线图案12的电极连接用焊盘15，通过粘接片34中的导电粒子电导通。还有，通过加压，软化的粘接片34进一步进入到布线图案12与基板10的段差以及布线图案12与保护膜30的段差中，也可以压出在段差中残存的空气。压出的空气，从按照与保护膜30的开口26的4角部连通而设置的槽32向外部排出。由此，在粘接片34与基板10之间消除空气(气泡或者空隙)。
应用在第2器具40中内置的第2加热器42，加热半导体元件20。粘接片34，作为粘接剂，比如使用以环氧树脂类为例的热固化型粘接剂。由此，通过该工序，粘接片34，在与半导体元件20的接触区域中固化，能够将半导体元件20与基板10粘接固定。
还有，第2器具40，也可以加热粘接片34的比半导体元件20更大的范围。由此，也可以应用具有比半导体元件20的平面面积更大的平面面积的器具。这样，很容易对半导体元件20的周围加热，能够更加确保粘接剂的固化以及半导体元件20的固定。
(6)按照需要，形成外部电极。在图1C所示的基板10的通孔14内及其附近，设置图中未画出的焊锡。也可以将预先形成的焊锡球搭载在上述位置。接下来，在回流焊工序中加热图中没有画出的焊锡，如图1D所示，形成焊锡球18。焊锡球18，成为外部电极。在该回流焊工序中，不仅焊锡而且粘接片34也被进一步加热。通过该加热，也固化了粘接片34的未固化区域。
如果这样构成，粘接片34与基板10之间就不残留空气，不容易产生气泡(也称为空隙)。即使进行粘接片34的固化或者回流焊而加热，由于没有气泡，所以也能够防止由于气泡的膨胀产生粘接片34的裂缝，进一步也能够防止由于水分进入裂缝而使布线图案12迁移。另外，由于也增大了粘接面积，能够确保半导体元件20与基板10的粘接强度。
有关本实施方式的半导体装置，具有能够从上述制造方法导出的构成。根据本实施方式，能够提供一种在粘接片34覆盖布线图案12的结构中可靠性高的半导体装置。
(第2实施方式)
图4表示有关本发明第2实施方式的半导体装置的制造方法的图。在本实施方式中，除了保护膜50以及粘接片54的结构以及形状以外，与第1实施方式所说明的内容相同。
图4所示第2实施方式中使用的粘接片54，具有排出气泡(空气)的多孔性。也可以按照没有与搭载半导体元件20的开口26的角部连接的槽那样形成保护膜50
根据上述所构成的半导体装置的制造方法，如图1A所示，将粘接片54粘贴在包括开口26、和该开口26与保护膜50的边界的范围。在此之后，用第1实施方式所说明的方法加热粘接片54并让其软化。
此时，粘接片54，软化后向重力方向垂下。软化的粘接片54，紧贴在布线图案12与基板10的段差以及布线图案12与保护膜50的段差上。通过软化的粘接片54，从每个段差或者缝隙挤压出的空气以及由于加热而膨胀的空气，从多孔质的粘接片54的孔部向外部排出。
在本实施方式中，虽然采用具有无数微小孔的多孔质的粘接片54，也可以在第1实施方式中所用的粘接片34中设置给定的贯通孔。贯通孔可以在直径1mm以下。
根据本实施方式，粘接片54与基板10之间没有残留空气，很难产生气泡(也称作空隙)，能够提供在用粘接片54覆盖布线图案12的结构中取得与第1实施方式所述的作用效果相同作用效果的可靠性高的半导体装置。
(第3实施方式)
图5表示有关本发明第3实施方式的半导体装置的制造方法的图。在本实施方式中，除了粘接片54的结构以及形状以外，与第1以及第2实施方式所说明的内容相同。
图5所示的第3实施方式，采用在第2实施方式中所用的排出气泡(空气)的多孔质的粘接片54。还有，按照由第1实施方式形成的矩形开口26的角部中具有槽32那样形成保护膜30。
在本实施方式中，将粘接片54粘贴在包括开口26、和该开口26与保护膜50的边界的范围。还有，此时，也可以避开至少槽32的一部分粘贴粘接片54。按照槽32的尾端露出到粘接片54之外那样粘贴。在这之后，按照在第1实施方式中所说明的方法加热粘接片54并让其软化。
软化的粘接片54，紧贴在布线图案12与基板10的段差以及布线图案12与保护膜30的段差上。通过软化的粘接片54，从每个段差或者缝隙挤压出的空气以及由于加热而膨胀的空气，从多孔质的粘接片54的孔部，以及从与开口26的角部连通的槽32向外部排出。
根据本实施方式，粘接片54与基板10之间没有残留空气，很难产生气泡(也称作空隙)，能够提供在用粘接片54覆盖布线图案12的结构中取得与第1实施方式所述的作用效果相同作用效果的可靠性高的半导体装置。
(变形例)
图6以及图7表示本发明实施方式变形例的图。
在图6所示的半导体装置的制造方法的变形例中，在粘接片64的端部，按照切割粘接片64边那样形成多个切口66。切口66，也可以在角部形成，也可以在边上形成。
根据该变形例，如果用第1实施方式所说明的方法加热(参照图1A)，那么软化的粘接片64，就向重力方向垂下。软化的粘接片64，紧贴在布线图案12与基板10的段差以及布线图案12与保护膜50的段差上。通过软化的粘接片64，从缝隙挤压出的空气以及由于加热而膨胀的空气，从切口66向外部排出。此时，保护膜，也可以是具有第1实施方式所示的槽32的保护膜30。
在图7所示的半导体装置的制造方法的变形例中，按照置于第2实施方式所示的开口26与保护膜50的边界上那样形成在粘接片74的端部的多个切口76。切口76，也可以如图7所示与各边平行形成，也可以倾斜形成。
根据该变形例，如果用第1实施方式所说明的方法加热(参照图1A)，那么软化的粘接片74就向重力方向垂下。软化的粘接片74，紧贴在布线图案12与基板10的段差以及布线图案12与保护膜50的段差上。由于存在切口76，所以能够将布线图案12与保护膜50的段差中存在的空气高效地从切口76向外部排出。此时，保护膜，也可以是具有第1实施方式所示的槽32的保护膜30。
根据上述实施方式，能够提供在用粘接片54覆盖布线图案12的结构中取得与第1实施方式所述的作用效果相同作用效果的可靠性高的半导体装置。
(半导体装置)
如果应用上述的半导体装置的制造方法，那么就能够提供在用粘接片覆盖保护膜的结构中可靠性高的半导体装置。
(电路基板、电子设备)
图8表示安装有关本实施方式的半导体装置的电路基板1000。另外，作为具有半导体装置的电子设备，图9表示笔记本型个人计算机2000。图10表示移动电话机3000。
本发明，不只限于上述实施方式，可能有各种各样的变形。比如，本发明，包括与由实施方式说明的构成实质上相同的构成(比如，功能、方法以及结果相同的构成、或者目的以及结果相同的构成)。另外，本发明，包括能够取得与由实施方式说明的构成相同作用效果的构成或者达到相同目的的构成。还有，本发明，包括在用实施方式说明的构成中添加公知技术的构成。

Claims (11)

1、一种半导体装置的制造方法，在半导体装置所使用的基板上形成有布线图案和保护膜，该保护膜具有矩形开口，利用该开口之外的区域覆盖所述布线图案，其特征在于，包括：
从所述保护膜的上方到所述开口内，在所述基板的面上粘贴粘接片，使得所述开口内在所述布线图案与所述基板的段差中形成空隙的步骤；
加热所述粘接片并让其软化的步骤；和
通过所述粘接片，将半导体元件粘接在所述基板上的步骤；
所述保护膜，具有与所述开口的角部连通的槽；
让所述粘接片避开至少一部分所述槽而进行粘贴；
通过加热所述粘接片并让其软化，让所述空隙通过所述槽排出。
2、根据权利要求1所述的半导体装置的制造方法，其特征在于，
所述粘接片是排出所述空隙的多孔质的粘接片。
3、根据权利要求1所述的半导体装置的制造方法，其特征在于，
在所述粘接片的端部，形成多个切口。
4、根据权利要求1所述的半导体装置的制造方法，其特征在于，
所述粘接片是绝缘片。
5、根据权利要求3所述的半导体装置的制造方法，其特征在于，
在所述保护膜的靠近所述开口的边界处设置所述切口。
6、根据权利要求1～4中任一项所述的半导体装置的制造方法，其特征在于，
在所述粘接片中分散有导电粒子，通过所述导电粒子将所述布线图案与电极电连接。
7、一种半导体装置的制造方法，在半导体装置所使用的基板上形成有布线图案和保护膜，该保护膜具有矩形开口，利用该开口之外的区域覆盖所述布线图案，其特征在于，包括：
从所述保护膜的上方到所述开口内，在所述基板的面上粘贴多孔质的粘接片，使得所述开口内在所述布线图案与所述基板的段差中形成空隙的步骤；
加热所述粘接片并让其软化，通过所述多孔质的粘接片自身排出所述空隙的步骤；和
通过所述粘接片，将半导体元件粘接在所述基板上，
在所述粘接片的端部，形成多个切口。
8、根据权利要求7所述的半导体装置的制造方法，其特征在于，
在所述保护膜的靠近所述开口的边界处设置所述切口。
9、根据权利要求7所述的半导体装置的制造方法，其特征在于，
在所述粘接片中分散有导电粒子，通过所述导电粒子将所述布线图案与电极电连接。
10、一种半导体装置的制造方法，在半导体装置所使用的基板上形成有布线图案和保护膜，该保护膜具有矩形开口，利用该开口之外的区域覆盖所述布线图案，其特征在于，包括：
从所述保护膜的上方到所述开口内，在所述基板的面上粘贴多孔质的绝缘片，使得所述开口内在所述布线图案与所述基板的段差中形成空隙的步骤；
加热所述绝缘片并让其软化，通过所述多孔质的绝缘片自身排出所述空隙的步骤；和
通过所述绝缘片，将半导体元件与所述基板绝缘。
11、根据权利要求10所述的半导体装置的制造方法，其特征在于，
在所述绝缘片中分散有导电粒子，通过所述导电粒子将所述布线图案与电极电连接。
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