CN100350082C - 碳化硅晶体的生长系统 - Google Patents

碳化硅晶体的生长系统 Download PDF

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Publication number
CN100350082C
CN100350082C CNB2004800164824A CN200480016482A CN100350082C CN 100350082 C CN100350082 C CN 100350082C CN B2004800164824 A CNB2004800164824 A CN B2004800164824A CN 200480016482 A CN200480016482 A CN 200480016482A CN 100350082 C CN100350082 C CN 100350082C
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China
Prior art keywords
chamber
gas
silicon
temperature
input device
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Expired - Lifetime
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CNB2004800164824A
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English (en)
Chinese (zh)
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CN1806069A (zh
Inventor
G·瓦伦特
V·泊泽缇
O·克迪那
M·玛斯
N·斯派西亚勒
D·克里帕
F·普勒缇
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LPE SpA
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LPE SpA
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
CNB2004800164824A 2003-06-13 2004-06-09 碳化硅晶体的生长系统 Expired - Lifetime CN100350082C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT001196A ITMI20031196A1 (it) 2003-06-13 2003-06-13 Sistema per crescere cristalli di carburo di silicio
ITMI2003A001196 2003-06-13

Publications (2)

Publication Number Publication Date
CN1806069A CN1806069A (zh) 2006-07-19
CN100350082C true CN100350082C (zh) 2007-11-21

Family

ID=30131205

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800164824A Expired - Lifetime CN100350082C (zh) 2003-06-13 2004-06-09 碳化硅晶体的生长系统

Country Status (8)

Country Link
US (1) US20060283389A1 (https=)
EP (1) EP1636404A1 (https=)
JP (1) JP2006527157A (https=)
KR (1) KR20060017810A (https=)
CN (1) CN100350082C (https=)
IT (1) ITMI20031196A1 (https=)
RU (1) RU2341595C2 (https=)
WO (1) WO2004111316A1 (https=)

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ATE335872T1 (de) 2003-04-24 2006-09-15 Norstel Ab Vorrichtung und verfahren zur herstellung von einkristallen durch dampfphasenabscheidung
ITMI20041677A1 (it) * 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
ITMI20050962A1 (it) * 2005-05-25 2006-11-26 Lpe Spa Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza
ITMI20051308A1 (it) * 2005-07-11 2007-01-12 Milano Politecnico Metodo e reattore per crescere cristalli
EP2074244A4 (en) * 2006-07-28 2011-11-23 Pronomic Industry Ab CRYSTAL BREEDING METHOD AND REACTOR CONCEPT
JP4962074B2 (ja) * 2007-03-22 2012-06-27 株式会社デンソー 炭化珪素単結晶の製造装置および製造方法
JP5560093B2 (ja) * 2009-06-30 2014-07-23 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法及び基板製造方法
JP4888548B2 (ja) * 2009-12-24 2012-02-29 株式会社デンソー 炭化珪素単結晶の製造装置および製造方法
WO2011105370A1 (ja) * 2010-02-26 2011-09-01 株式会社日立国際電気 半導体装置の製造方法及び基板製造方法及び基板処理装置
JP5212455B2 (ja) * 2010-12-16 2013-06-19 株式会社デンソー 炭化珪素単結晶の製造装置
JP5287840B2 (ja) * 2010-12-16 2013-09-11 株式会社デンソー 炭化珪素単結晶の製造装置
JP5578146B2 (ja) * 2011-08-10 2014-08-27 株式会社デンソー 炭化珪素単結晶製造装置
JP5668638B2 (ja) * 2011-08-10 2015-02-12 株式会社デンソー 炭化珪素単結晶の製造装置
JP5696804B2 (ja) * 2014-03-19 2015-04-08 株式会社デンソー 炭化珪素単結晶の製造装置
DE102015100062A1 (de) 2015-01-06 2016-07-07 Universität Paderborn Vorrichtung und Verfahren zum Herstellen von Siliziumcarbid
US11209306B2 (en) 2017-11-02 2021-12-28 Fluke Corporation Portable acoustic imaging tool with scanning and analysis capability
US20190129027A1 (en) 2017-11-02 2019-05-02 Fluke Corporation Multi-modal acoustic imaging tool
JP7403526B2 (ja) 2018-07-24 2023-12-22 フルークコーポレイション 取り外し可能および取り付け可能な音響撮像センサのためのシステムおよび方法
IT201900000223A1 (it) 2019-01-09 2020-07-09 Lpe Spa Camera di reazione con elemento rotante e reattore per deposizione di materiale semiconduttore
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
WO2021242509A1 (en) * 2020-05-26 2021-12-02 Unm Rainforest Innovations Two-dimensional silicon carbide materials and fabrication methods thereof
KR102525767B1 (ko) * 2021-11-11 2023-04-27 오씨아이 주식회사 고순도 SiC 결정체의 제조방법

Citations (4)

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WO1997001658A1 (en) * 1995-06-26 1997-01-16 Abb Research Ltd. A device and a method for epitaxially growing objects by cvd
WO1998014644A1 (en) * 1996-10-01 1998-04-09 Abb Research Ltd. A device for epitaxially growing objects and method for such a growth
US6048398A (en) * 1995-10-04 2000-04-11 Abb Research Ltd. Device for epitaxially growing objects
WO2001027361A1 (en) * 1999-10-08 2001-04-19 Cree, Inc. Method and apparatus for growing silicon carbide crystals

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FI97920C (fi) * 1991-02-27 1997-03-10 Okmetic Oy Tapa puhdistaa puolijohdevalmiste
RU2026896C1 (ru) * 1991-06-19 1995-01-20 Институт проблем механики РАН Устройство для плазмохимического осаждения пленок
JPH05208900A (ja) * 1992-01-28 1993-08-20 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長装置
FI98308C (fi) * 1994-08-29 1997-05-26 Okmetic Oy Kiinnitysaine kappaleen kiinnittämiseksi alustaansa
US6030661A (en) * 1995-08-04 2000-02-29 Abb Research Ltd. Device and a method for epitaxially growing objects by CVD
SE9503426D0 (sv) * 1995-10-04 1995-10-04 Abb Research Ltd A device for heat treatment of objects and a method for producing a susceptor
US6039812A (en) * 1996-10-21 2000-03-21 Abb Research Ltd. Device for epitaxially growing objects and method for such a growth
EP0933450B1 (en) * 1998-01-19 2002-04-17 Sumitomo Electric Industries, Ltd. Method of making SiC single crystal and apparatus for making SiC single crystal
JP4053125B2 (ja) * 1998-01-19 2008-02-27 住友電気工業株式会社 ＳｉＣ単結晶の合成方法
US6045613A (en) * 1998-10-09 2000-04-04 Cree, Inc. Production of bulk single crystals of silicon carbide
US6486081B1 (en) * 1998-11-13 2002-11-26 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
RU2162117C2 (ru) * 1999-01-21 2001-01-20 Макаров Юрий Николаевич Способ эпитаксиального выращивания карбида кремния и реактор для его осуществления
US6406539B1 (en) * 1999-04-28 2002-06-18 Showa Denko K.K, Process for producing silicon carbide single crystal and production apparatus therefor
JP3959952B2 (ja) * 2000-11-10 2007-08-15 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
JP3864696B2 (ja) * 2000-11-10 2007-01-10 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
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JP4329282B2 (ja) * 2001-06-22 2009-09-09 株式会社デンソー 炭化珪素単結晶の製造方法
US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
US7147713B2 (en) * 2003-04-30 2006-12-12 Cree, Inc. Phase controlled sublimation

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
WO1997001658A1 (en) * 1995-06-26 1997-01-16 Abb Research Ltd. A device and a method for epitaxially growing objects by cvd
US5704985A (en) * 1995-06-26 1998-01-06 Abb Research Ltd. Device and a method for epitaxially growing objects by CVD
US6048398A (en) * 1995-10-04 2000-04-11 Abb Research Ltd. Device for epitaxially growing objects
WO1998014644A1 (en) * 1996-10-01 1998-04-09 Abb Research Ltd. A device for epitaxially growing objects and method for such a growth
WO2001027361A1 (en) * 1999-10-08 2001-04-19 Cree, Inc. Method and apparatus for growing silicon carbide crystals

Also Published As

Publication number Publication date
KR20060017810A (ko) 2006-02-27
JP2006527157A (ja) 2006-11-30
US20060283389A1 (en) 2006-12-21
CN1806069A (zh) 2006-07-19
RU2341595C2 (ru) 2008-12-20
ITMI20031196A1 (it) 2004-12-14
RU2006101147A (ru) 2006-06-10
EP1636404A1 (en) 2006-03-22
ITMI20031196A0 (it) 2003-06-13
WO2004111316A1 (en) 2004-12-23

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Address after: Italy Brian Jet

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Granted publication date: 20071121