RU2341595C2 - Устройство для выращивания кристаллов карбида кремния - Google Patents

Устройство для выращивания кристаллов карбида кремния Download PDF

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Publication number
RU2341595C2
RU2341595C2 RU2006101147/15A RU2006101147A RU2341595C2 RU 2341595 C2 RU2341595 C2 RU 2341595C2 RU 2006101147/15 A RU2006101147/15 A RU 2006101147/15A RU 2006101147 A RU2006101147 A RU 2006101147A RU 2341595 C2 RU2341595 C2 RU 2341595C2
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Russia
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chamber
zone
silicon
entering
gases
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RU2006101147/15A
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Russian (ru)
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RU2006101147A (ru
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Джан Лука ВАЛЕНТЕ (IT)
Джан Лука ВАЛЕНТЕ
Витторио ПОДЗЕТТИ (IT)
Витторио ПОДЗЕТТИ
Ольле КОРДИНА (IT)
Ольле КОРДИНА
Маурицио МАСИ (IT)
Маурицио МАСИ
Натале СПЕЧИАЛЕ (IT)
Натале СПЕЧИАЛЕ
Данило КРИППА (IT)
Данило КРИППА
Франко ПРЕТИ (IT)
Франко ПРЕТИ
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Лпе Спа
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
RU2006101147/15A 2003-06-13 2004-06-09 Устройство для выращивания кристаллов карбида кремния RU2341595C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT001196A ITMI20031196A1 (it) 2003-06-13 2003-06-13 Sistema per crescere cristalli di carburo di silicio
ITMI2003A001196 2003-06-13

Publications (2)

Publication Number Publication Date
RU2006101147A RU2006101147A (ru) 2006-06-10
RU2341595C2 true RU2341595C2 (ru) 2008-12-20

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RU2006101147/15A RU2341595C2 (ru) 2003-06-13 2004-06-09 Устройство для выращивания кристаллов карбида кремния

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Country Link
US (1) US20060283389A1 (https=)
EP (1) EP1636404A1 (https=)
JP (1) JP2006527157A (https=)
KR (1) KR20060017810A (https=)
CN (1) CN100350082C (https=)
IT (1) ITMI20031196A1 (https=)
RU (1) RU2341595C2 (https=)
WO (1) WO2004111316A1 (https=)

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ATE335872T1 (de) 2003-04-24 2006-09-15 Norstel Ab Vorrichtung und verfahren zur herstellung von einkristallen durch dampfphasenabscheidung
ITMI20041677A1 (it) * 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
ITMI20050962A1 (it) * 2005-05-25 2006-11-26 Lpe Spa Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza
ITMI20051308A1 (it) * 2005-07-11 2007-01-12 Milano Politecnico Metodo e reattore per crescere cristalli
EP2074244A4 (en) * 2006-07-28 2011-11-23 Pronomic Industry Ab CRYSTAL BREEDING METHOD AND REACTOR CONCEPT
JP4962074B2 (ja) * 2007-03-22 2012-06-27 株式会社デンソー 炭化珪素単結晶の製造装置および製造方法
JP5560093B2 (ja) * 2009-06-30 2014-07-23 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法及び基板製造方法
JP4888548B2 (ja) * 2009-12-24 2012-02-29 株式会社デンソー 炭化珪素単結晶の製造装置および製造方法
WO2011105370A1 (ja) * 2010-02-26 2011-09-01 株式会社日立国際電気 半導体装置の製造方法及び基板製造方法及び基板処理装置
JP5212455B2 (ja) * 2010-12-16 2013-06-19 株式会社デンソー 炭化珪素単結晶の製造装置
JP5287840B2 (ja) * 2010-12-16 2013-09-11 株式会社デンソー 炭化珪素単結晶の製造装置
JP5578146B2 (ja) * 2011-08-10 2014-08-27 株式会社デンソー 炭化珪素単結晶製造装置
JP5668638B2 (ja) * 2011-08-10 2015-02-12 株式会社デンソー 炭化珪素単結晶の製造装置
JP5696804B2 (ja) * 2014-03-19 2015-04-08 株式会社デンソー 炭化珪素単結晶の製造装置
DE102015100062A1 (de) 2015-01-06 2016-07-07 Universität Paderborn Vorrichtung und Verfahren zum Herstellen von Siliziumcarbid
US11209306B2 (en) 2017-11-02 2021-12-28 Fluke Corporation Portable acoustic imaging tool with scanning and analysis capability
US20190129027A1 (en) 2017-11-02 2019-05-02 Fluke Corporation Multi-modal acoustic imaging tool
JP7403526B2 (ja) 2018-07-24 2023-12-22 フルークコーポレイション 取り外し可能および取り付け可能な音響撮像センサのためのシステムおよび方法
IT201900000223A1 (it) 2019-01-09 2020-07-09 Lpe Spa Camera di reazione con elemento rotante e reattore per deposizione di materiale semiconduttore
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
WO2021242509A1 (en) * 2020-05-26 2021-12-02 Unm Rainforest Innovations Two-dimensional silicon carbide materials and fabrication methods thereof
KR102525767B1 (ko) * 2021-11-11 2023-04-27 오씨아이 주식회사 고순도 SiC 결정체의 제조방법

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WO1997001658A1 (en) * 1995-06-26 1997-01-16 Abb Research Ltd. A device and a method for epitaxially growing objects by cvd
RU2162117C2 (ru) * 1999-01-21 2001-01-20 Макаров Юрий Николаевич Способ эпитаксиального выращивания карбида кремния и реактор для его осуществления
WO2001027361A1 (en) * 1999-10-08 2001-04-19 Cree, Inc. Method and apparatus for growing silicon carbide crystals

Also Published As

Publication number Publication date
KR20060017810A (ko) 2006-02-27
JP2006527157A (ja) 2006-11-30
US20060283389A1 (en) 2006-12-21
CN1806069A (zh) 2006-07-19
ITMI20031196A1 (it) 2004-12-14
RU2006101147A (ru) 2006-06-10
CN100350082C (zh) 2007-11-21
EP1636404A1 (en) 2006-03-22
ITMI20031196A0 (it) 2003-06-13
WO2004111316A1 (en) 2004-12-23

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