CN100342510C - 副支架和半导体器件 - Google Patents

副支架和半导体器件 Download PDF

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Publication number
CN100342510C
CN100342510C CNB038184877A CN03818487A CN100342510C CN 100342510 C CN100342510 C CN 100342510C CN B038184877 A CNB038184877 A CN B038184877A CN 03818487 A CN03818487 A CN 03818487A CN 100342510 C CN100342510 C CN 100342510C
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China
Prior art keywords
layer
assistant support
solder layer
film
semiconductor device
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Expired - Fee Related
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CNB038184877A
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English (en)
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CN1672251A (zh
Inventor
石井隆
桧垣贤次郎
筑木保志
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0233—Sheets, foils
    • B23K35/0238—Sheets, foils layered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/262—Sn as the principal constituent
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

本发明提供了一种副支架，其使得半导体发光元件以较高的粘合强度连接。一个副支架3装有基板3和在基板的初级表面4f上形成的焊接剂层8。焊接剂层8的密度至少为焊接剂层8所用材料的理论密度的50%且不大于99.9%。焊接剂层8含有至少一种下列组分：金-锡合金、银-锡合金和铅-锡合金。焊接剂层8在其熔化之前在基板4上形成，并含有Ag膜8b和在Ag膜8b上形成的Sn膜8a。副支架3还含有在基板4和焊接剂层8之间形成的Au膜6。

Description

副支架和半导体器件
技术领域
本发明涉及一种副支架及使用这种副支架的半导体器件。更具体而言，本发明涉及一种在其上装有半导体发光元件的副支架，及一种使用这种副支架的半导体器件。在本发明中，“半导体发光元件”是指例如激光二极管或发光二极管的元件。
背景技术
装有半导体发光元件的半导体器件已是广为人知的。如图4所示，其中一种半导体器件是通过将半导体发光元件安装在副支架3上构成的。图4是简单的剖视图用以阐明常用的半导体器件是如何构成的。下面参考图4，描述制备半导体器件的常用方法。
如图4所示，在制备半导体器件1的常用方法中，制备副支架3用于安装激光二极管2，其用作半导体的发光元件。副支架是由以下构成的：一个陶瓷基板4；在该基板上由含有钛(Ti)的膜和含有铂(Pt)的膜形成的一种分层膜(Ti/Pt膜层5)；在分层膜上形成的一种金(Au)膜6并用作电极层；在该膜上形成的含有铂(Pt)的一个阻挡层107；以及在该阻挡层上形成的含有金(Au)和锡(Sn)的焊接剂层108。分层Ti/Pt膜、Au膜、阻焊层和焊接剂层可以用常用的成膜方法形成，例如蒸汽法、溅射法或镀敷法和常用的形成图案的方法例如光刻法或金属掩蔽法。
制成如图4所示的副支架(submount)之后，加热副支架上的焊接剂，熔化，并将用作半导体发光元件的激光二极管安装在焊接剂上的预定位置上(进行芯焊接步骤(die bond step))。然后，连接图中未显示的散热片，并用焊接剂等固定在副支架的背部，得到装有半导体发光元件的半导体器件。
为了降低在半导体发光元件芯焊接步骤期间对半导体发光元件的热损害，或以由焊接剂形成焊接剂层，所述焊接剂的熔点低于上述AuSn-基的焊接剂，例如铅(Pb)锡(Sn)基焊接剂或银(Ag)锡(Sn)基焊接剂。如果使用AuSn-基焊接剂，则可得到没有铅的产品。
目前趋于在半导体发光元件中得到较高输出，从而可以用于多种应用，如在激光处理器中的较高输出，和在CD和DVD器件中较高的书写速度。半导体器件在这些需要高度实践可靠性中使用。其要求之一是在半导体发光元件和副支架之间有高粘合强度。
发明内容
本发明的目的旨在克服上述问题，并提供一种副支架，其能够与半导体发光元件形成高强度粘合，以及使用这种副支架的半导体器件。
本发明的副支架安装有副支架，该副支架装有副支架基板和在副支架基板的初级表面上形成的焊接剂层。熔化之前焊接剂层的密度至少为焊接剂层中所用的材料的理论密度的50％，且不大于99.9％。
在这类结构中，因为熔化之前焊接剂层的密度至少为焊接剂层中所用材料的理论密度的50％，且不大于99.9％，焊接剂层的密度较高。因此副支架和安装在焊接剂层上的半导体发光元件之间的粘合强度可以增加。如果焊接剂层的密度小于理论密度的50％，焊接剂层密度的降低阻碍了粘合强度的充分改善。密度大于理论密度的99.9％在技术上是难以实现的。
优选地，焊接剂层含有至少一种下列组分：金-锡合金；银-锡合金和铅-锡合金。更优选地，焊接剂层的主要组分是银锡基焊接剂。在这种情况下，提供了一种没有铅的技术，且用于半导体发光元件的粘合温度可以保持较低，因此防止了对半导体发光元件的与热有关的损害。
优选地，在熔化之前在副支架基板上形成焊接剂层，且该焊接剂层包括一个以银(Ag)作为主要组分的第一层，以及在一个第一层上形成的以锡(Sn)作为主要组分的第二层。例如，Ag膜可用作第一层，Sn膜可用作第二层。
优选地，副支架还包括在副支架基板和焊接剂层之间形成的电极层。
优选地，电极层含有金。
优选地，副支架还包括在焊接剂层和电极层之间形成的焊接粘合层。焊接粘合层含有：一个设置在焊接剂层侧并具有至少一种下列组分作为主要组分的贵金属层：金(Au)、铂(Pt)、钯(Pd)及其合金；以及一个设置在电极层侧并具有至少一种下列组分作为主要组分的过渡元素层：钛(Ti)、钒(V)、铬(Cr)、锆(Zr)、铌(Nb)及其合金。从而使得可以进一步改善焊接剂的粘合强度。
过渡元素可以是具有至少一种下列组分作为其主要组分的一层：4A族元素、5A族元素、6A族元素或其合金。具有不同组成的多个层也可以层合。
为了改进粘合强度，同时也基于价格上的考虑，优选过滤元素层和贵金属层的膜厚度大于0且不大于1微米。更优选过渡元素的膜厚度为至少0.01微米且不大于0.2微米。贵金属层的膜厚度为至少0.01微米且不大于0.1微米。
优选地，副支架还包括在副支架基板和焊接剂层之间形成的粘合层和扩散阻隔层。形成粘合层使得与副支架基板的初级表面相接触。在粘合层上形成扩散阻隔层。
优选的粘合层含有钛，扩散阻隔层含有铂。
优选地，副支架基板含有烧结的氮化铝(AlN)或烧结的氧化铝(Al2O3)，更优选副支架基板含有烧结的氮化铝。在这种情况下，因为氮化铝具有高的热传导性，因此可得到具有优异热分散性能的副支架。副支架基板也可含有烧结的碳化硅(SiC)，铜钨合金或复合体。
本发明的半导体器件装有上述副支架和安装在副支架的焊接剂层上的半导体发光元件。
这一类的半导体器件，半导体发光元件可以以高粘合强度与副支架粘接，并改进了半导体器件的实践可靠性。
本发明的上述和其它目的、特征和优点可以通过阅读下述说明以及附图而清晰，其中相同的附图标记指的是同一元件。
附图的简要说明
图1是简化的剖视图，显示了本发明的第一实施方案的半导体器件。
图2是简化的剖视图，显示了本发明的第二实施方案的半导体器件。
图3是简化的剖视图，说明如何制得图2所示的半导体器件。
图4是简化的剖视图，说明如何制得常规的半导体器件。
具体实施方式
(第一实施方案)
参见附图描述本发明的一种实施方案。在这些附图中相同的或互相对应的元件设定为相同的标记，省略了重叠的描述。图1显示了本发明的第一实施方案的半导体器件的简化的剖视图。如图1所示，半导体器件1装有：一个副支架3，和用作半导体发光元件的一个激光二极管2，其经焊接剂层8安装在副支架3上。焊接剂层8的密度至少为焊接剂层8中所用的AuSn-基焊接剂的理论密度的50％且不大于99.9％。
通过下列层层压在基板4上来形成副支架3：Ti/Pt分层膜5，金(Au)膜6，阻焊层107和焊接剂层8。图1所示的半导体器件是通过首先制备其上安装有激光二极管2的副支架3来制成的。从下列组分形成副支架：陶瓷基板4，在基板上从含有钛(Ti)的膜(粘合层)和含有铂(Pt)的膜(扩散阻隔层)形成分层膜(Ti/Pt分层膜5)，在分层膜上形成的并用作电极层的金(Au)膜6，在含有铂(Pt)的该膜上形成的阻挡层107和在该阻挡层上形成的含有金(Ag)和锡(Sn)的焊接剂层8。分层Ti/Pt膜、金膜、阻焊层和焊接剂层可以用常用的成膜方法形成，例如蒸汽法、溅射法或镀敷法和常用的形成图案的方法例如光刻法或金属掩蔽法。
除了银-锡焊接剂之处，焊接剂层8也可由金-锡或铅-锡焊接剂形成。
测定焊接剂层8的密度的方法的例子是在Toray Research Center的“The TRC News”，59期(1997年4月)，11-16页描述的X-射线反射技术(GIXR)。
一旦已经制备了图1所示的副支架，则加热副支架上的焊接剂，熔化，并将用作半导体发光元件的激光二极管安装在焊接剂的预定位置(完成芯焊接步骤)。然后连接副支架后侧，并用焊接剂等固定于图中未示出的散热器上，从而得到装有半导体发光元件的半导体器件。
根据本发明的这一类副支架和半导体器件，在半导体发光元件和副支架之间的粘合强度由于预熔焊接剂层的密度为理论密度的至少50％且不大于99.9％而得到改善。因此半导体器件的实践可靠性可进一步改善。
(第二实施方案)
图2显示了本发明的第二实施方案的半导体器件的简化的剖视图。图3是简化的剖视图，用以说明如何制得图2所示的半导体器件，并显示了焊接剂熔化之前的状态。
如图2所示，半导体器件1按如下结构形成，其中用作半导体发光元件的激光二极管2安装在副支架3上。该副支架从以下组分形成：由诸如烧结的氮化铝(AlN)材料形成副支架基板4；从用作粘合层的钛(Ti)膜5b和用作扩散阻隔层的铂(Pt)膜5a形成分层膜5(Ti/Pt分层膜5)；在Ti/Pt分层膜5上形成的并用作电极层的金(Au)膜6；和从用作过渡元素层的钛(Ti)膜7b和用作贵金属层的铂(Pt)膜7a形成焊接粘合层7；在焊接粘合层上并由银锡(AgSn)基焊接剂形成焊接剂层8。
如图2和图3所示，通过焊接剂层连接激光二极管和副支架。激光二极管的宽度、焊接剂层的宽度和焊接粘合层的宽度大致相同。且在焊接剂被熔化之前以及之后，焊接剂层的宽度和长度大于或小于激光二极管的宽度和长度，焊接粘合层的宽度和长度可大于或小于焊接剂层的宽度和长度。
在图2所示的半导体器件中，副支架中的基板可以从陶瓷、半导体或金属形成。陶瓷的例子包括带有上述烧结氮化铝、氧化铝(Al2O3)、碳化硅(SiC)或氮化硅(Si3N4)作为主要组分的陶瓷。半导体的例子包括那些以硅作为主要组分的半导体。金属的例子包括铜(Cu)、钨(W)、钼(Mo)、铁(Fe)、含有任意这些金属的合金以及复合材料如铜钨(CuW)。
对于基板优选使用具有高热传导性的材料。热传导性优选为至少100W/mK，且更优选为至少170W/mK。且优选热膨胀系数接近于激光二极管中所用的材料的热膨胀系数。例如，如果形成的激光二极管带有砷化镓(GaAs)或磷化铟(InP)，热膨胀系数优选不大于10×10-6，更优选不大于5×10-6。
如果基板4中使用了陶瓷，则可形成连接上表面和相反的下表面的通孔(through-hole)或填装有传导器(通过填充)的通路孔(via hole)。装有通路孔(通过填充(via fill))的传导器的主要组分优选是高熔点的金属，特别是钨(W)或钼(Mo)。也可向其中加入过渡金属例如钛(Ti)或玻璃组分或基板材料(例如氮化铝(AlN))。
基板的表面粗糙度优选为Ra不大于1微米，且更优选不大于0.1微米。如果Ra超过1微米或平整度超过5微米，则粘合激光二极管时会与副支架形成缝隙，从而导致激光二极管冷却中的缩减。表面粗糙度Ra和平整度通过JIS标准(分别为JIS B0601和JIS B0621)来定义。
Ti/Pt分层膜中的Ti膜(含有钛(Ti)的膜)是一种用于增加与基板粘合的粘合膜。形成该膜使得其与基板的上表面接触。所用的材料可以是例如(Ti)、钒(V)、铬(Cr)、镍铬合金(NiCr)、锆(Zr)、铌(Nb)、钽(Ta)及其复合物。或者如果基板是金属、合金或含有金属的复合材料，则不需要存在粘合层。
Ti/Pt分层膜中的铂(Pt)膜是一种扩散阻隔层，其在Ti膜的上表面上形成。所用的材料可以是例如铂(Pt)、钯(Pd)、镍铬合金(NiCr)、镍(Ni)、钼(Mo)等。对于电极，通常使用Au作为主要组分。
焊接粘合层和电极层之间可以插有阻焊层。所用的材料可以是例如铂(Pt)、镍铬合金(NiCr)、镍(Ni)等。阻挡层的宽度和长度可以大于或小于焊接粘合层的宽度和长度。
除了上述银锡(AgSn)基焊接剂之外，用于焊接剂层的材料可以是例如：低熔点金属焊接剂如锡(Sn)或铟(In)；合金焊接剂如金锡(AuSn)基焊接剂，金锗(AuGe)基焊接剂，铅锡(PbSn)基焊接剂或铟锡(InSn)基焊接剂，或其组合。且在熔化之前，焊接剂层可通过将上述合金焊接剂的不同类型的金属层压而形成，例如如图3中元件8a，8b所示。如果银锡(AgSn)基焊接剂用于焊接剂层时，优选银(Ag)为至少0质量％，且不大于72质量％。如果使用金锡(AuSn)基焊接剂，优选金(Au)为至少65质量％，且不大于85质量％，或为至少5质量％，且不大于20质量％。
Ti/Pt分层膜、Au膜、焊接粘合层、阻焊层和焊接剂层都归属于金属化层。常用的成膜方法可用于形成金属化层，如形成薄层的方法如蒸汽法和溅射法，或镀敷法。用于Ti/Pt分层膜、Au膜、焊接粘合层和焊接剂层的形成图案的方法的例子包括采用光刻法、化学蚀刻法、干蚀刻法和金属掩蔽法的升离(lift-off)法。
Ti/Pt分层膜中钛(Ti)膜的厚度优选为至少0.01微米且不大于1.0微米，铂(Pt)膜的厚度为至少0.01微米且不大于1.5微米。优选用作电极膜的Au膜的厚度为至少0.1微米且不大于10微米，焊接剂层的厚度为至少0.1微米且不大于10微米。如果形成了阻挡层，则其厚度优选为至少0.01微米且不大于1.5微米。
用于半导体发光元件的材料的例子包括化合物半导体如GaAs-基、InP-基和GaN-基半导体。在下表面发光激光二极管中(其中在面对激光二极管连接于焊接剂层的部分的激光二极管表面上形成激光二极管的发光部分)，发光部分(其为产生热的部分)设置在靠近基板的位置，从而进一步改进了半导体器件的热分散。
在激光二极管的表面上形成绝缘层如二氧化硅膜(SiO2)和金属化层如电极层。为了确保充分润湿焊接剂层，用作电极层的金(Au)层的厚度优选为至少0.1微米且不大于10微米。
图中未示出的，用焊接剂将散热器连接到图2所示的半导体器件上。更具体而言，一旦在与形成Ti/Pt分层膜相反位置的基板表面上形成了粘合层和扩散阻隔层等时，焊接片(焊接箔)可以例如插入到基板的后侧和散热器之间，散热器可以使用这种焊接箔来粘合。焊接箔也可以预先在基板的后侧的金属化层上形成。在这种情况下，可以同时将激光二极管和散热器粘接到基板上。
用于散热器的材料可以是例如金属或陶瓷。金属的例子包括铜(Cu)、铝(Al)、钨(W)、钼(Mo)、铁(Fe)和合金以及含有任意这些金属的复合材料。为了促进焊接，优选在散热器表面上形成镍(Ni)膜、金(Au)膜或含有这些金属的膜。这些膜可以用蒸汽法或镀敷法形成。散热器的热传导性优选为至少100W/mK。
其次，利用图3描述了用烧结的氮化铝作为基板制备图2所示的半导体器件。
在第一步加工过程中，制备基板。因为这类副支架的长度和宽度非常小，与数毫米相似，通常制备基板母体材料，例如其长度和宽度约为50mm，在其上形成金属化层，并将母体材料细切为预定大小。下列描述紧接着该方法。因此，在该步骤中，母体基板的大小为例如50mm宽，50mm长和0.4mm厚。用作基板材料的烧结氮化铝可用标准方法制备。
然后，在第二步加工过程中，打磨基板的表面。打磨的基板的表面粗糙度优选不大于1.0微米Ra，且更优选不大于0.1微米。可以用标准方法例如圆盘抛光机、喷砂机、砂纸或磨料颗粒进行打磨。
接着，如图3所示，对于用作粘合层的Ti膜5b、用作扩散阻隔层的Pt膜5a和用作电极层的Au膜6，在第三步加工过程中形成抗蚀图案以形成预定的图案。该抗蚀图案例如用光刻法在分别形成各个膜的区域的外的基板部分上形成抗蚀膜。
在第四步加工过程中，用作粘合层的Ti膜蒸发。膜厚度可以例如为0.1微米。
在第五步加工过程中，用作扩散阻隔层的Pt膜在粘合层上形成。膜厚度可以例如为0.2微米。
在第六步加工过程中，用作电极层的Au膜蒸发。膜厚度可以例如为0.6微米。
第七步加工过程是升离法。在该过程中，去除抗蚀剂的流体用于除去在第三步加工过程中进行的形成图案时形成的抗蚀膜，以及在抗蚀膜顶部的粘合层、扩散阻隔层和电极层。结果，在基板上形成了具有预定图案的三种膜。
在第八步加工过程中，蒸发焊接粘合层。在该步骤中，用金属掩蔽法蒸发用作电极层上过渡元素层的Ti膜7b，然后蒸发用作贵金属层的Pt膜7a。以该方式形成的Ti膜和Pt膜的厚度可以为分别例如0.08微米和0.05微米。
然后，在第九步加工过程中，进行真空蒸发以在焊接粘合层上形成焊接剂层8。此处，金属掩蔽法用于蒸发用作Ag/Sn焊接剂层的Ag膜8至焊接粘合层上。接着蒸发Sn膜8a。Ag膜和Sn膜的厚度分别为例如1.5微米和3.0微米。
在形成焊接剂层的加工过程中，优选通过在成膜之前使用不大于5.0×10-4Pa，更优选不大于1.0×10-4Pa的室压(真空最大级)来降低在成膜气氛中的气体杂质，例如水和氧气。为了改进焊接剂层与焊接粘合层的粘性，也优选在形成焊接剂层期间基板的表面温度为至少20℃，且不大于比焊接剂的液相温度低10℃的温度。
在形成焊接剂层8中，焊接剂层8的密度必须至少为理论密度的50％，且不大于99.9％。如何实现该目的的一个例子是将焊接剂层8的成膜速率设定在至少1.3nm/秒。成膜速率增加密度也增加的原理是不清楚的。相信通常如果成膜速率低，构成焊接剂层的原子向稳定位置移动使得原子不再填充在焊接剂层中使密度最大，从而降低了焊接剂层的密度。相反，具有高成膜速率则构成焊接剂层的原子在其能够移至稳定位置之前被其它原子所包围，从而防止了它们的移动。因此，焊接剂层可以被原子所填充使得密度最大，从而增加了焊接剂层的密度。
与上述金属掩蔽法不同的另一方法是，可以如前述采用光刻法形成具有预定图案的焊接剂层和焊接粘合层。
然后，在第十个加工过程中，母体基板被切为所希望副支架的长度和宽度以得到图2所示的副支架。
然后，在第十一个加工过程中，粘合用作半导体发光元件的激光二极管2。更具体而言，如图3所示，在已加热的焊接剂层8上按箭头9所示，将元件安装并使之熔化，从而将元件经焊接剂层粘合到副支架上。完成了图2所示的半导体器件1。
正如在第一个实施方案的焊接剂层8中，根据上述第二个实施方案的焊接剂层8的密度为银锡基焊接剂理论密度的至少50％且不大于99.9％。
对于根据本发明上述的副支架和半导体，熔化之前焊接剂层的密度为理论密度的至少50％且不大于99.9％，从而提供了在半导体发光元件和副支架之间增加的粘合强度。因此改善了半导体器件的实践可靠性。
实施方案
(制备和评价样品)
基于上述方法，由表1所示的样品1～样品11制备副支架。样品2～样品11对应于应实施方案，样品1对应于对比实施例。
表1
样品号   基板 焊接剂层   激光二极管
焊接剂组成比例(质量比)   焊接剂厚度(微米)   焊接剂相对密度(％)   焊接剂成膜速率(nm/s)   粘合温度   模式剪切强度(MPa)
1   烧结AIN Ag∶Sn＝32∶68   1.5/4.0(分层Ag/Sn)   42   1   250   37
2   烧结AIN Ag∶Sn＝32∶68   1.5/4.0(分层Ag/Sn)   62   1.5   250   47
3   烧结AIN Ag∶Sn＝32∶68   1.5/4.0(分层Ag/Sn)   99   2   250   52
4   烧结AIN Ag∶Sn＝32∶68   1.5/4.0(分层Ag/Sn)   92   5   250   51
5   烧结AIN Ag∶Sn＝32∶68   1.5/4.0(分层Ag/Sn)   88   9   250   50
6   烧结SiC Ag∶Sn＝32∶68   1.5/4.0(分层Ag/Sn)   94   2   250   49
7   烧结Al2O3 Ag∶Sn＝32∶68   1.5/4.0(分层Ag/Sn)   95   2   250   47
8   CuW Ag∶Sn＝32∶68   1.5/4.0(分层Ag/Sn)   97   2   250   48
9   烧结AIN Ag∶Sn＝10∶90   3.5(合金)   96   2   250   49
10   烧结AIN Au∶Sn＝80∶20   3.5(合金)   93   2   285   47
11   烧结AIN Au∶Sn＝10∶90   3.5(合金)   94   2   230   45
首先，用表1的材料制备基板。大小均为50nm(长)×50nm(宽)×0.4mm(厚度)。磨损基板的表面使得主表面4f的粗糙度Ra为0.05微米。然后，将采用光刻法的升离方法(lift-off method)和真空蒸发方法形成金属化层，其由0.1微米厚的Ti膜5b，0.2微米厚的Pt膜5a和0.6微米厚的Au膜6组成。对于样品8，为了替代这种金属化膜，制备由1.0微米厚的Ni镀膜和1.0微米厚的Au镀膜形成金属化膜。
然后，用金属掩蔽法和真空蒸发法在金属化层上，形成用作焊接粘合层7的过渡元素层(Ti，0.06微米厚)和贵金属层(Pt，0.05微米厚)。
接着，对于所有的样品，用金属掩蔽法和真空蒸发法形成焊接剂层8。焊接剂层的组分、膜厚度和成膜速率如表1所示。在表1中，“焊接剂组成比例”是指在焊接剂层中各元素的质量比。“焊接剂相对密度”是指焊接剂层相对于焊接剂层中所用材料的理论密度的密度。
随后，切割基板4，对每个样品1～11形成十个副支架，各个副支架为1.2mm(长)×1.5mm(宽)×0.3mm(厚度)。然后，对于每个样品，在氮气氛下加热焊接剂层并熔化，粘合激光二极管2。粘合温度如表1所示。
用基于MIL-STD-883C方法2019.4的模式剪切强度测试测定按这种方式得到的半导体器件1(参见图1)中的激光二极管对副支架的粘合强度，并测定各个样品序号的十个样品的平均粘合强度。结果如表1所示。
表1中的结果显示相对于对比实施例，本发明的副支架和半导体器件提供了在半导体发光元件和副支架之间改进的粘合强度。
(成膜速度和焊接剂层之间的关系)
变化焊接剂层的成膜速度，并研究了成膜速度和焊接剂层之间的关系。结果发现如果焊接剂层的成膜速度为至少1.3nm/s(纳米/秒)，则焊接剂层的密度为焊接剂层中所用材料的理论密度的至少50％且不大于99.9％。如果焊接剂层的成膜速度为至少1.8nm/s且不高于10nm/s，则发现焊接剂层的密度为焊接剂层中所用材料的理论密度的至少80％且不大于99.9％。这些范围得到了特别优选的粘合强度。
参考附图描述本发明优选的实施方案，应当认为本发明并不限于这些确定的实施方案，其中本领域技术人员无需偏离本发明如附属的权利要求所定义的范围和精神即可进行多种变化和修正。

Claims (21)

1.在带有副支架基板和在所述副支架基板的初级表面上形成的焊接剂层的副支架中，一个副支架，其中所述的焊接剂层含有至少一种下列组分：AgSn、Sn、In、AuSn、AuGe、PbSn、InSn或其组合，并且熔化之前所述焊接剂层的密度至少为所述焊接剂层中所用材料的理论密度的50％且不大于99.9％。
2.如权利要求1所述的副支架，其中所述的焊接剂层在熔化之前在所述的副支架基板上形成，并包括以银作为主要组分的第一层，和在所述第一层上形成的以锡作为主要组分的第二层。
3.如权利要求1所述的副支架，进一步包含在所述副支架基板和所述焊接剂层之间形成的电极层。
4.如权利要求2所述的副支架，进一步包含在所述副支架基板和所述焊接剂层之间形成的电极层。
5.如权利要求3所述的副支架，其中所述的电极层含有金。
6.如权利要求4所述的副支架，其中所述的电极层含有金。
7.如权利要求3所述的副支架，进一步包含在所述焊接剂层和所述电极层之间形成的焊接粘合层；其中所述的焊接粘合层含有：设置在所述焊接剂层侧上并以至少一种下列组分作为主要组分的贵金属层：金、铂、钯及其合金；和设置在所述电极层侧上并以至少一种下列组分作为主要组分的过渡元素层：钛、钒、铬、锆、铌及其合金。
8.如权利要求4所述的副支架，进一步包含在所述焊接剂层和所述电极层之间形成的焊接粘合层；其中所述的焊接粘合层含有：设置在所述焊接剂层侧上并以至少一种下列组分作为主要组分的贵金属层：金、铂、钯及其合金；和设置在所述电极层侧上并以至少一种下列组分作为主要组分的过渡元素层：钛、钒、铬、锆、铌及其合金。
9.如权利要求5所述的副支架，进一步包含在所述焊接剂层和所述电极层之间形成的焊接粘合层；其中所述的焊接粘合层含有：设置在所述焊接剂层侧上并以至少一种下列组分作为主要组分的贵金属层：金、铂、钯及其合金；和设置在所述电极层侧上并以至少一种下列组分作为主要组分的过渡元素层：钛、钒、铬、锆、铌及其合金。
10.如权利要求6所述的副支架，进一步包含在所述焊接剂层和所述电极层之间形成的焊接粘合层；其中所述的焊接粘合层含有：设置在所述焊接剂层侧上并以至少一种下列组分作为主要组分的贵金属层：金、铂、钯及其合金；和设置在所述电极层侧上并以至少一种下列组分作为主要组分的过渡元素层：钛、钒、铬、锆、铌及其合金。
11.如权利要求1～10中任一项所述的副支架，进一步包含在所述副支架基板和所述焊接剂层之间形成的粘合层和扩散阻隔层，其中：形成所述粘合层使其与所述副支架基板的初级表面接触，并且所述扩散阻隔层在所述粘合层上面形成。
12.如权利要求11所述的副支架，其中所述的粘合层含有钛，所述的扩散阻隔层含有铂。
13.如权利要求1～10中任一项所述的副支架，其中所述的副支架基板含有烧结的氮化铝或烧结的氧化铝。
14.如权利要求11所述的副支架，其中所述的副支架基板含有烧结的氮化铝或烧结的氧化铝。
15.如权利要求12所述的副支架，其中所述的副支架基板含有烧结的氮化铝或烧结的氧化铝。
16.一种半导体器件，其含有：
如权利要求1～10中任一项所述的副支架，和
安装在所述副支架的所述焊接剂层上的半导体发光元件。
17.一种半导体器件，其含有：
如权利要求11所述的副支架，和
安装在所述副支架的所述焊接剂层上的半导体发光元件。
18.一种半导体器件，其含有：
如权利要求12所述的副支架，和
安装在所述副支架的所述焊接剂层上的半导体发光元件。
19.一种半导体器件，其含有：
如权利要求13所述的副支架，和
安装在所述副支架的所述焊接剂层上的半导体发光元件。
20.一种半导体器件，其含有：
如权利要求14所述的副支架，和
安装在所述副支架的所述焊接剂层上的半导体发光元件。
21.一种半导体器件，其含有：
如权利要求15所述的副支架，和
安装在所述副支架的所述焊接剂层上的半导体发光元件。
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