CN100339941C - 布线结构及其制造方法和电光装置、电子设备 - Google Patents

布线结构及其制造方法和电光装置、电子设备 Download PDF

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Publication number
CN100339941C
CN100339941C CNB2003101152751A CN200310115275A CN100339941C CN 100339941 C CN100339941 C CN 100339941C CN B2003101152751 A CNB2003101152751 A CN B2003101152751A CN 200310115275 A CN200310115275 A CN 200310115275A CN 100339941 C CN100339941 C CN 100339941C
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CN
China
Prior art keywords
mentioned
layer
conductive layer
electrode
relay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2003101152751A
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English (en)
Chinese (zh)
Other versions
CN1503322A (zh
Inventor
宫崎敏英
小山田晋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
138 East Lcd Display Development Co ltd
Original Assignee
Seiko Epson Corp
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Publication of CN1503322A publication Critical patent/CN1503322A/zh
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Publication of CN100339941C publication Critical patent/CN100339941C/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CNB2003101152751A 2002-11-26 2003-11-26 布线结构及其制造方法和电光装置、电子设备 Expired - Lifetime CN100339941C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002342490A JP3835403B2 (ja) 2002-11-26 2002-11-26 電気光学装置及び電子機器
JP342490/2002 2002-11-26

Publications (2)

Publication Number Publication Date
CN1503322A CN1503322A (zh) 2004-06-09
CN100339941C true CN100339941C (zh) 2007-09-26

Family

ID=32588065

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003101152751A Expired - Lifetime CN100339941C (zh) 2002-11-26 2003-11-26 布线结构及其制造方法和电光装置、电子设备

Country Status (5)

Country Link
US (1) US7079198B2 (enExample)
JP (1) JP3835403B2 (enExample)
KR (1) KR100611861B1 (enExample)
CN (1) CN100339941C (enExample)
TW (1) TWI277026B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073994A (ja) * 2004-08-05 2006-03-16 Seiko Epson Corp 接続用基板、接続構造、接続方法並びに電子機器
TW200617547A (en) * 2004-11-19 2006-06-01 Innolux Display Corp A liquid crystal display device
KR20070014715A (ko) * 2005-07-29 2007-02-01 삼성전자주식회사 개구율이 향상된 어레이 기판 및 이의 제조방법
TW200746940A (en) * 2005-10-14 2007-12-16 Ibiden Co Ltd Printed wiring board
US7882928B2 (en) * 2008-06-26 2011-02-08 Welch Allyn, Inc. Acoustic measurement tip
US8958037B2 (en) * 2009-05-29 2015-02-17 Sharp Kabushiki Kaisha Liquid crystal display element comprising at least two insulating layers having different dielectric constants and at least two pixel regions which differ in shapes of equipotential lines
FR2965942B1 (fr) * 2010-10-08 2013-02-22 Commissariat Energie Atomique Afficheur a cristal liquide de type transmissif en technologie cmos avec capacite de stockage auxiliaire
ITTO20110995A1 (it) * 2011-10-31 2013-05-01 St Microelectronics Srl Dispositivo micro-elettro-meccanico dotato di regioni conduttive sepolte e relativo procedimento di fabbricazione
JP5953923B2 (ja) * 2012-05-15 2016-07-20 セイコーエプソン株式会社 電気光学装置および電子機器
TW201539095A (zh) * 2014-04-01 2015-10-16 Seiko Epson Corp 光電裝置及電子機器
CN114156267B (zh) * 2020-09-07 2024-10-29 长鑫存储技术有限公司 半导体器件及其制备方法、存储装置
CN121281379A (zh) * 2024-06-06 2026-01-06 天马新型显示技术研究院(厦门)有限公司 一种显示面板和显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090704A (en) * 1997-07-16 2000-07-18 Samsung Electronics Co., Ltd. Method for fabricating a high dielectric capacitor
US6171941B1 (en) * 1998-12-24 2001-01-09 Hyundai Electronic Industries Co., Ltd. Method for fabricating capacitor of semiconductor memory device using titanium aluminum nitride as diffusion-inhibiting layer
US6174822B1 (en) * 1997-06-24 2001-01-16 Matsushita Electronics Corporation Semiconductor device and method for fabricating the same
JP2002012889A (ja) * 2000-06-30 2002-01-15 Kao Corp 固形石鹸

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10104660A (ja) 1996-10-03 1998-04-24 Hitachi Ltd 液晶表示装置
JP3401589B2 (ja) * 1998-10-21 2003-04-28 株式会社アドバンスト・ディスプレイ Ｔｆｔアレイ基板および液晶表示装置
JP3134866B2 (ja) * 1999-02-05 2001-02-13 日本電気株式会社 液晶表示装置とその製造方法
JP4402197B2 (ja) * 1999-05-24 2010-01-20 シャープ株式会社 アクティブマトリクス型表示装置
JP4496600B2 (ja) 2000-04-24 2010-07-07 セイコーエプソン株式会社 電気光学装置及びプロジェクタ
JP3608531B2 (ja) 2000-08-31 2005-01-12 セイコーエプソン株式会社 電気光学装置及び投射型表示装置
JP3830361B2 (ja) 2000-08-11 2006-10-04 セイコーエプソン株式会社 Ｔｆｔアレイ基板、電気光学装置及び投射型表示装置
JP2002107745A (ja) 2000-09-27 2002-04-10 Seiko Epson Corp 電気光学装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174822B1 (en) * 1997-06-24 2001-01-16 Matsushita Electronics Corporation Semiconductor device and method for fabricating the same
US6090704A (en) * 1997-07-16 2000-07-18 Samsung Electronics Co., Ltd. Method for fabricating a high dielectric capacitor
US6171941B1 (en) * 1998-12-24 2001-01-09 Hyundai Electronic Industries Co., Ltd. Method for fabricating capacitor of semiconductor memory device using titanium aluminum nitride as diffusion-inhibiting layer
JP2002012889A (ja) * 2000-06-30 2002-01-15 Kao Corp 固形石鹸

Also Published As

Publication number Publication date
CN1503322A (zh) 2004-06-09
JP2004177589A (ja) 2004-06-24
TW200410181A (en) 2004-06-16
TWI277026B (en) 2007-03-21
US20040119899A1 (en) 2004-06-24
KR20040047627A (ko) 2004-06-05
US7079198B2 (en) 2006-07-18
KR100611861B1 (ko) 2006-08-11
JP3835403B2 (ja) 2006-10-18

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Effective date of registration: 20220920

Address after: Irish Dublin

Patentee after: 138 East LCD Display Development Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: Seiko Epson Corp.

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CX01 Expiry of patent term

Granted publication date: 20070926

CX01 Expiry of patent term