CH648691A5 - Low-temperature process for depositing oxide layers by photochemical vapour deposition - Google Patents

Low-temperature process for depositing oxide layers by photochemical vapour deposition Download PDF

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Publication number
CH648691A5
CH648691A5 CH3974/81A CH397481A CH648691A5 CH 648691 A5 CH648691 A5 CH 648691A5 CH 3974/81 A CH3974/81 A CH 3974/81A CH 397481 A CH397481 A CH 397481A CH 648691 A5 CH648691 A5 CH 648691A5
Authority
CH
Switzerland
Prior art keywords
sih4
oxygen
oxide
vapor phase
containing precursor
Prior art date
Application number
CH3974/81A
Other languages
German (de)
English (en)
Inventor
John William Peters
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of CH648691A5 publication Critical patent/CH648691A5/de

Links

Classifications

    • H10P14/6922—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14—Methods for preparing oxides or hydroxides in general
    • C01B13/20—Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • H10P14/6338—
    • H10P14/692—
    • H10P14/6928—
    • H10P32/141—
    • H10P32/171—
    • H10P14/6334—
    • H10P14/6336—
    • H10P14/6682—
    • H10P14/69215—
    • H10P14/6923—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
CH3974/81A 1979-12-17 1981-06-16 Low-temperature process for depositing oxide layers by photochemical vapour deposition CH648691A5 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10432379A 1979-12-17 1979-12-17

Publications (1)

Publication Number Publication Date
CH648691A5 true CH648691A5 (en) 1985-03-29

Family

ID=22299878

Family Applications (1)

Application Number Title Priority Date Filing Date
CH3974/81A CH648691A5 (en) 1979-12-17 1981-06-16 Low-temperature process for depositing oxide layers by photochemical vapour deposition

Country Status (11)

Country Link
EP (1) EP0030798B1 (en:Method)
JP (1) JPS5696704A (en:Method)
KR (1) KR840001545B1 (en:Method)
CA (1) CA1183102A (en:Method)
CH (1) CH648691A5 (en:Method)
DE (1) DE3066027D1 (en:Method)
GB (1) GB2094280A (en:Method)
HK (1) HK65284A (en:Method)
IL (1) IL61538A (en:Method)
SE (1) SE442409B (en:Method)
SG (1) SG33584G (en:Method)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5875828A (ja) * 1981-10-30 1983-05-07 Ushio Inc 被膜形成方法
GB2111037B (en) * 1981-11-23 1984-10-17 Hughes Aircraft Co Preparing substrates for semi-conductors
US4447469A (en) * 1982-06-10 1984-05-08 Hughes Aircraft Company Process for forming sulfide layers by photochemical vapor deposition
WO1984000178A1 (en) * 1982-06-22 1984-01-19 Hughes Aircraft Co Low temperature process for depositing epitaxial layers
GB2131611B (en) * 1982-11-17 1986-11-12 Standard Telephones Cables Ltd Dielectric materials
JPH0614552B2 (ja) * 1983-02-02 1994-02-23 富士ゼロックス株式会社 光電変換素子の製造方法
JPS59164653A (ja) * 1983-03-08 1984-09-17 Sumitomo Electric Ind Ltd 金属被覆光フアイバ−の製造方法
JPH0685389B2 (ja) * 1983-12-23 1994-10-26 日本電信電話株式会社 半導体装置の保護膜
JPS60162775A (ja) * 1984-01-31 1985-08-24 Nec Corp シリコン酸化膜の製造方法
JPS60216538A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 半導体基板への不純物拡散方法
JPS60216539A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 半導体装置の製造方法
US4595601A (en) * 1984-05-25 1986-06-17 Kabushiki Kaisha Toshiba Method of selectively forming an insulation layer
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
US4590091A (en) * 1984-12-17 1986-05-20 Hughes Aircraft Company Photochemical process for substrate surface preparation
US4640224A (en) * 1985-08-05 1987-02-03 Spectrum Cvd, Inc. CVD heat source
US4632057A (en) * 1985-08-05 1986-12-30 Spectrum Cvd, Inc. CVD plasma reactor
US4632056A (en) * 1985-08-05 1986-12-30 Stitz Robert W CVD temperature control
US4800105A (en) * 1986-07-22 1989-01-24 Nihon Shinku Gijutsu Kabushiki Kaisha Method of forming a thin film by chemical vapor deposition
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
EP0289963A1 (en) * 1987-05-04 1988-11-09 General Signal Corporation Apparatus for, and methods of, obtaining the movement of a substance to a substrate
EP0306069A3 (en) * 1987-08-31 1990-12-27 Koninklijke Philips Electronics N.V. A method of forming an oxide layer on a substrate
JPH01242496A (ja) * 1988-03-24 1989-09-27 Mitsubishi Metal Corp 酸化物系超伝導薄膜の製造方法
US5064517A (en) * 1989-01-18 1991-11-12 Idemitsu Kosan Company Limited Method for the preparation of fine particulate-metal-containing compound
DE3937723A1 (de) * 1989-11-13 1991-05-16 Fraunhofer Ges Forschung Verfahren und vorrichtung zum herstellen einer silikatschicht in einer integrierten schaltung
US5262358A (en) * 1989-11-13 1993-11-16 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method for producing a silicate layer in an integrated circuit
JPH04120732A (ja) * 1990-09-12 1992-04-21 Hitachi Ltd 固体素子及びその製造方法
US5670018A (en) * 1995-04-27 1997-09-23 Siemens Aktiengesellschaft Isotropic silicon etch process that is highly selective to tungsten
US5979666A (en) * 1996-06-28 1999-11-09 Douglas; Patrick J. Apparatus for screening particulate material
US6461982B2 (en) 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
US6943392B2 (en) 1999-08-30 2005-09-13 Micron Technology, Inc. Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
US6558517B2 (en) 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
US6566147B2 (en) 2001-02-02 2003-05-20 Micron Technology, Inc. Method for controlling deposition of dielectric films
US6838122B2 (en) 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
US20030017266A1 (en) 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
US7011978B2 (en) 2001-08-17 2006-03-14 Micron Technology, Inc. Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions
US8258511B2 (en) * 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL287925A (en:Method) * 1962-01-19
GB1165575A (en) * 1966-01-03 1969-10-01 Texas Instruments Inc Semiconductor Device Stabilization.
NL6707515A (en:Method) * 1967-05-31 1968-12-02
JPS4929099B1 (en:Method) * 1970-03-27 1974-08-01
JPS4926747B1 (en:Method) * 1970-10-09 1974-07-11
US3907616A (en) * 1972-11-15 1975-09-23 Texas Instruments Inc Method of forming doped dielectric layers utilizing reactive plasma deposition

Also Published As

Publication number Publication date
SE442409B (sv) 1985-12-23
JPS6324923B2 (en:Method) 1988-05-23
JPS5696704A (en) 1981-08-05
KR840001545B1 (ko) 1984-10-04
EP0030798B1 (en) 1983-12-28
IL61538A0 (en) 1980-12-31
SE8103604L (sv) 1982-12-10
SG33584G (en) 1985-02-08
IL61538A (en) 1984-03-30
EP0030798A1 (en) 1981-06-24
CA1183102A (en) 1985-02-26
HK65284A (en) 1984-08-31
KR830004445A (ko) 1983-07-13
GB2094280A (en) 1982-09-15
DE3066027D1 (en) 1984-02-02

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