CH527498A - Verfahren zum selektiven elektrolytischen Abätzen eines Abschnittes eines Siliziumhalbleiterkörpers - Google Patents

Verfahren zum selektiven elektrolytischen Abätzen eines Abschnittes eines Siliziumhalbleiterkörpers

Info

Publication number
CH527498A
CH527498A CH1867670A CH1867670A CH527498A CH 527498 A CH527498 A CH 527498A CH 1867670 A CH1867670 A CH 1867670A CH 1867670 A CH1867670 A CH 1867670A CH 527498 A CH527498 A CH 527498A
Authority
CH
Switzerland
Prior art keywords
section
semiconductor body
silicon semiconductor
electrolytic etching
selective electrolytic
Prior art date
Application number
CH1867670A
Other languages
English (en)
Inventor
Atkin Waggener Herbert
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH527498A publication Critical patent/CH527498A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
CH1867670A 1969-12-16 1970-12-16 Verfahren zum selektiven elektrolytischen Abätzen eines Abschnittes eines Siliziumhalbleiterkörpers CH527498A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88560569A 1969-12-16 1969-12-16

Publications (1)

Publication Number Publication Date
CH527498A true CH527498A (de) 1972-08-31

Family

ID=25387295

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1867670A CH527498A (de) 1969-12-16 1970-12-16 Verfahren zum selektiven elektrolytischen Abätzen eines Abschnittes eines Siliziumhalbleiterkörpers

Country Status (11)

Country Link
US (1) US3689389A (de)
JP (1) JPS4911793B1 (de)
BE (1) BE759296A (de)
CH (1) CH527498A (de)
ES (1) ES387267A1 (de)
FR (1) FR2070873B1 (de)
GB (1) GB1318770A (de)
IE (1) IE34802B1 (de)
IL (1) IL35826A (de)
NL (1) NL143733B (de)
SE (1) SE369801B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027179B2 (ja) * 1975-11-05 1985-06-27 日本電気株式会社 多孔質シリコンの形成方法
US4597003A (en) * 1983-12-01 1986-06-24 Harry E. Aine Chemical etching of a semiconductive wafer by undercutting an etch stopped layer
US4783237A (en) * 1983-12-01 1988-11-08 Harry E. Aine Solid state transducer and method of making same
US4682776A (en) * 1985-11-06 1987-07-28 William Mitchell User worn arm bend control device
US4692066A (en) * 1986-03-18 1987-09-08 Clear Kenneth C Cathodic protection of reinforced concrete in contact with conductive liquid
US5576249A (en) * 1987-08-05 1996-11-19 Hughes Aircraft Company Electrochemically etched multilayer semiconductor structures
DE3805752A1 (de) * 1988-02-24 1989-08-31 Fraunhofer Ges Forschung Anisotropes aetzverfahren mit elektrochemischem aetzstop
US4822755A (en) * 1988-04-25 1989-04-18 Xerox Corporation Method of fabricating large area semiconductor arrays
DE4036895A1 (de) * 1990-11-20 1992-05-21 Messerschmitt Boelkow Blohm Elektrochemisches verfahren zum anisotropen aetzen von silizium
US5129982A (en) * 1991-03-15 1992-07-14 General Motors Corporation Selective electrochemical etching
GB201217525D0 (en) 2012-10-01 2012-11-14 Isis Innovation Composition for hydrogen generation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1044289B (de) * 1956-07-16 1958-11-20 Telefunken Gmbh Verfahren zur Herstellung einer duennen Halbleiterschicht, z. B. aus Germanium, durchelektrolytische Abaetzung der Oberflaeche eines Halbleiterkoerpers, insbesondere fuer die Herstellung von Transistoren
FR1332459A (fr) * 1961-08-28 1963-07-12 Philips Nv Transistor à couches et son procédé de fabrication

Also Published As

Publication number Publication date
US3689389A (en) 1972-09-05
IE34802L (en) 1971-06-16
IL35826A (en) 1973-11-28
DE2061061A1 (de) 1971-07-08
GB1318770A (en) 1973-05-31
JPS4911793B1 (de) 1974-03-19
FR2070873A1 (de) 1971-09-17
IE34802B1 (en) 1975-08-20
NL7018051A (de) 1971-06-18
IL35826A0 (en) 1971-02-25
FR2070873B1 (de) 1974-04-26
ES387267A1 (es) 1973-05-01
NL143733B (nl) 1974-10-15
BE759296A (fr) 1971-04-30
DE2061061B2 (de) 1972-11-30
SE369801B (de) 1974-09-16

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Legal Events

Date Code Title Description
PL Patent ceased