SE369801B - - Google Patents

Info

Publication number
SE369801B
SE369801B SE16521/70A SE1652170A SE369801B SE 369801 B SE369801 B SE 369801B SE 16521/70 A SE16521/70 A SE 16521/70A SE 1652170 A SE1652170 A SE 1652170A SE 369801 B SE369801 B SE 369801B
Authority
SE
Sweden
Application number
SE16521/70A
Inventor
H Waggener
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE369801B publication Critical patent/SE369801B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
SE16521/70A 1969-12-16 1970-12-07 SE369801B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88560569A 1969-12-16 1969-12-16

Publications (1)

Publication Number Publication Date
SE369801B true SE369801B (xx) 1974-09-16

Family

ID=25387295

Family Applications (1)

Application Number Title Priority Date Filing Date
SE16521/70A SE369801B (xx) 1969-12-16 1970-12-07

Country Status (11)

Country Link
US (1) US3689389A (xx)
JP (1) JPS4911793B1 (xx)
BE (1) BE759296A (xx)
CH (1) CH527498A (xx)
ES (1) ES387267A1 (xx)
FR (1) FR2070873B1 (xx)
GB (1) GB1318770A (xx)
IE (1) IE34802B1 (xx)
IL (1) IL35826A (xx)
NL (1) NL143733B (xx)
SE (1) SE369801B (xx)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027179B2 (ja) * 1975-11-05 1985-06-27 日本電気株式会社 多孔質シリコンの形成方法
US4783237A (en) * 1983-12-01 1988-11-08 Harry E. Aine Solid state transducer and method of making same
US4597003A (en) * 1983-12-01 1986-06-24 Harry E. Aine Chemical etching of a semiconductive wafer by undercutting an etch stopped layer
US4682776A (en) * 1985-11-06 1987-07-28 William Mitchell User worn arm bend control device
US4692066A (en) * 1986-03-18 1987-09-08 Clear Kenneth C Cathodic protection of reinforced concrete in contact with conductive liquid
US5576249A (en) * 1987-08-05 1996-11-19 Hughes Aircraft Company Electrochemically etched multilayer semiconductor structures
DE3805752A1 (de) * 1988-02-24 1989-08-31 Fraunhofer Ges Forschung Anisotropes aetzverfahren mit elektrochemischem aetzstop
US4822755A (en) * 1988-04-25 1989-04-18 Xerox Corporation Method of fabricating large area semiconductor arrays
DE4036895A1 (de) * 1990-11-20 1992-05-21 Messerschmitt Boelkow Blohm Elektrochemisches verfahren zum anisotropen aetzen von silizium
US5129982A (en) * 1991-03-15 1992-07-14 General Motors Corporation Selective electrochemical etching
GB201217525D0 (en) 2012-10-01 2012-11-14 Isis Innovation Composition for hydrogen generation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1044289B (de) * 1956-07-16 1958-11-20 Telefunken Gmbh Verfahren zur Herstellung einer duennen Halbleiterschicht, z. B. aus Germanium, durchelektrolytische Abaetzung der Oberflaeche eines Halbleiterkoerpers, insbesondere fuer die Herstellung von Transistoren
FR1332459A (fr) * 1961-08-28 1963-07-12 Philips Nv Transistor à couches et son procédé de fabrication

Also Published As

Publication number Publication date
ES387267A1 (es) 1973-05-01
JPS4911793B1 (xx) 1974-03-19
US3689389A (en) 1972-09-05
DE2061061A1 (de) 1971-07-08
NL7018051A (xx) 1971-06-18
IE34802B1 (en) 1975-08-20
IE34802L (en) 1971-06-16
IL35826A0 (en) 1971-02-25
BE759296A (fr) 1971-04-30
FR2070873B1 (xx) 1974-04-26
CH527498A (de) 1972-08-31
NL143733B (nl) 1974-10-15
FR2070873A1 (xx) 1971-09-17
GB1318770A (en) 1973-05-31
IL35826A (en) 1973-11-28
DE2061061B2 (de) 1972-11-30

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