CH485327A - Verfahren zum Herstellen von Fotolackmasken für Halbleiterzwecke - Google Patents

Verfahren zum Herstellen von Fotolackmasken für Halbleiterzwecke

Info

Publication number
CH485327A
CH485327A CH1581068A CH1581068A CH485327A CH 485327 A CH485327 A CH 485327A CH 1581068 A CH1581068 A CH 1581068A CH 1581068 A CH1581068 A CH 1581068A CH 485327 A CH485327 A CH 485327A
Authority
CH
Switzerland
Prior art keywords
production
photoresist masks
semiconductor purposes
semiconductor
purposes
Prior art date
Application number
CH1581068A
Other languages
English (en)
Inventor
Heinz Dr Henker
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH485327A publication Critical patent/CH485327A/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CH1581068A 1967-10-23 1968-10-23 Verfahren zum Herstellen von Fotolackmasken für Halbleiterzwecke CH485327A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0112516 1967-10-23

Publications (1)

Publication Number Publication Date
CH485327A true CH485327A (de) 1970-01-31

Family

ID=7531832

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1581068A CH485327A (de) 1967-10-23 1968-10-23 Verfahren zum Herstellen von Fotolackmasken für Halbleiterzwecke

Country Status (8)

Country Link
US (1) US3607382A (de)
AT (1) AT301620B (de)
CH (1) CH485327A (de)
DE (1) DE1614635A1 (de)
FR (1) FR1589571A (de)
GB (1) GB1230469A (de)
NL (1) NL6813891A (de)
SE (1) SE331315B (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2234659A1 (de) * 1973-06-19 1975-01-17 Westinghouse Electric Corp
FR2472213A1 (fr) * 1979-12-18 1981-06-26 Philips Nv Fabrication de circuit microminiature a l'etat solide et circuits ainsi obtenus
AT391224B (de) * 1988-01-26 1990-09-10 Thallner Erich Belichtungseinrichtung fuer lichtempfindlich gemachte substrate

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1328803A (en) * 1969-12-17 1973-09-05 Mullard Ltd Methods of manufacturing semiconductor devices
US3779806A (en) * 1972-03-24 1973-12-18 Ibm Electron beam sensitive polymer t-butyl methacrylate resist
US3900737A (en) * 1974-04-18 1975-08-19 Bell Telephone Labor Inc Electron beam exposure system
US4035522A (en) * 1974-07-19 1977-07-12 International Business Machines Corporation X-ray lithography mask
FR2294489A1 (fr) * 1974-12-13 1976-07-09 Thomson Csf Dispositif pour le trace programme de dessins par bombardement de particules
US4576884A (en) * 1984-06-14 1986-03-18 Microelectronics Center Of North Carolina Method and apparatus for exposing photoresist by using an electron beam and controlling its voltage and charge

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330696A (en) * 1967-07-11 Method of fabricating thin film capacitors
US2705764A (en) * 1950-02-25 1955-04-05 Rca Corp Dual-area target electrodes and methods of making the same
US2968723A (en) * 1957-04-11 1961-01-17 Zeiss Carl Means for controlling crystal structure of materials
US3113896A (en) * 1961-01-31 1963-12-10 Space Technology Lab Inc Electron beam masking for etching electrical circuits
NL297262A (de) * 1962-09-04
NL294370A (de) * 1963-06-20
US3364087A (en) * 1964-04-27 1968-01-16 Varian Associates Method of using laser to coat or etch substrate
US3388000A (en) * 1964-09-18 1968-06-11 Texas Instruments Inc Method of forming a metal contact on a semiconductor device
US3326176A (en) * 1964-10-27 1967-06-20 Nat Res Corp Work-registration device including ionic beam probe

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2234659A1 (de) * 1973-06-19 1975-01-17 Westinghouse Electric Corp
FR2472213A1 (fr) * 1979-12-18 1981-06-26 Philips Nv Fabrication de circuit microminiature a l'etat solide et circuits ainsi obtenus
AT391224B (de) * 1988-01-26 1990-09-10 Thallner Erich Belichtungseinrichtung fuer lichtempfindlich gemachte substrate

Also Published As

Publication number Publication date
DE1614635A1 (de) 1970-03-26
FR1589571A (de) 1970-03-31
GB1230469A (de) 1971-05-05
US3607382A (en) 1971-09-21
NL6813891A (de) 1969-04-25
SE331315B (de) 1970-12-21
AT301620B (de) 1972-08-15

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Legal Events

Date Code Title Description
PL Patent ceased